Abstract: A semiconductor device includes a semiconductor fin, a lining oxide layer, a silicon nitride based layer and a gate oxide layer. The semiconductor fin has a top fin surface, an upper fin side surface portion adjacent to the top fin surface, and a lower fin side surface contiguously connected to the upper fin side surface portion. The lining oxide layer peripherally encloses the lower fin side surface portion of the semiconductor fin. The silicon nitride based layer is disposed conformally over the lining oxide layer. The gate oxide layer is disposed conformally over the top fin surface and the upper fin side surface portion.

Abstract: Various embodiments of the present application are directed to a method for forming a semiconductor-on-insulator (SOI) device with an impurity competing layer to absorb potential contamination metal particles during an annealing process, and the SOI structure thereof. In some embodiments, an impurity competing layer is formed on the dummy substrate. An insulation layer is formed over a support substrate. A front side of the dummy wafer is bonded to the insulation layer. An annealing process is performed and the impurity competing layer absorbs metal from an upper portion of the dummy substrate. Then, a majority portion of the dummy substrate is removed including the impurity competing layer, leaving a device layer of the dummy substrate on the insulation layer.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming an integrated circuit (IC). The method includes forming a gate electrode and a gate dielectric stacked over a substrate. A sidewall spacer layer is deposited over the substrate and the gate electrode, in which the sidewall spacer layer lines sidewalls of the gate electrode. An etching back is performed on the sidewall spacer layer to form a sidewall spacer on the sidewalls of the gate electrode. The etching back is performed at an etch rate less than about 8 angstroms/minute using an etchant comprising hydrogen fluoride. Further, the substrate is doped with the sidewall spacer and the gate electrode in place to form a pair of source/drain regions respectively on opposite sides of the gate electrode.

Abstract: The present disclosure relates to an image sensor having a photodiode surrounded by a back-side deep trench isolation (BDTI) structure, and an associated method of formation. In some embodiments, a plurality of pixel regions is disposed within an image sensing die and respectively comprises a photodiode configured to convert radiation into an electrical signal. The photodiode comprises a photodiode doping column with a first doping type surrounded by a photodiode doping layer with a second doping type that is different than the first doping type. A BDTI structure is disposed between adjacent pixel regions and extending from the back-side of the image sensor die to a position within the photodiode doping layer. The BDTI structure comprises a doped liner with the second doping type and a dielectric fill layer. The doped liner lines a sidewall surface of the dielectric fill layer.

Abstract: Various embodiments of the present application are directed towards a method for forming a semiconductor-on-insulator (SOI) substrate with a thick device layer and a thick insulator layer. In some embodiments, the method includes forming an insulator layer covering a handle substrate, and epitaxially forming a device layer on a sacrificial substrate. The sacrificial substrate is bonded to a handle substrate, such that the device layer and the insulator layer are between the sacrificial and handle substrates, and the sacrificial substrate is removed. The removal includes performing an etch into the sacrificial substrate until the device layer is reached. Because the device layer is formed by epitaxy and transferred to the handle substrate, the device layer may be formed with a large thickness. Further, because the epitaxy is not affected by the thickness of the insulator layer, the insulator layer may be formed with a large thickness.

Abstract: A semiconductor device includes a gate stack over a substrate. The semiconductor device further includes an interlayer dielectric (ILD) at least partially enclosing the gate stack. The ILD includes a first portion doped with an oxygen-containing material. The ILD further includes a second portion doped with a large species material, wherein the second portion includes a first sidewall substantially perpendicular to a top surface of the substrate, and the second portion includes a second sidewall having a positive angle with respect to the first sidewall.

Abstract: Various embodiments of the present application are directed to a method for forming a thin semiconductor-on-insulator (SOI) substrate without implantation radiation and/or plasma damage. In some embodiments, a device layer is epitaxially formed on a sacrificial substrate and an insulator layer is formed on the device layer. The insulator layer may, for example, be formed with a net charge that is negative or neutral. The sacrificial substrate is bonded to a handle substrate, such that the device layer and the insulator layer are between the sacrificial and handle substrates. The sacrificial substrate is removed, and the device layer is cyclically thinned until the device layer has a target thickness. Each thinning cycle comprises oxidizing a portion of the device layer and removing oxide resulting from the oxidizing.

Abstract: In some embodiments, the present disclosure relates to a high-resistivity silicon-on-insulator (SOI) substrate, including a first polysilicon layer arranged over a semiconductor substrate. A second polysilicon layer is arranged over the first polysilicon layer, and a third polysilicon layer is arranged over the second polysilicon layer. An active semiconductor layer over an insulator layer may be arranged over the third polysilicon layer. The second polysilicon layer has an elevated concentration of oxygen compared to the first and third polysilicon layers.

Abstract: Various embodiments of the present application are directed to a method for forming a semiconductor-on-insulator (SOI) device with an impurity competing layer to absorb potential contamination metal particles during an annealing process, and the SOI structure thereof. In some embodiments, an impurity competing layer is formed on the dummy substrate. An insulation layer is formed over a support substrate. A front side of the dummy wafer is bonded to the insulation layer. An annealing process is performed and the impurity competing layer absorbs metal from an upper portion of the dummy substrate. Then, a majority portion of the dummy substrate is removed including the impurity competing layer, leaving a device layer of the dummy substrate on the insulation layer.

Abstract: A semiconductor-on-insulator (SOI) substrate includes a handle substrate, a charge-trapping layer located over the handle substrate and including nitrogen-doped polysilicon, an insulating layer located over the charge-trapping layer, and a semiconductor material layer located over the insulating layer. The nitrogen atoms in the charge-trapping layer suppress grain growth during anneal processes used to form the SOI substrate and during subsequent high temperature processes used to form semiconductor devices on the semiconductor material layer. Reduction in grain growth reduces distortion of the SOI substrate, and facilitates overlay of lithographic patterns during fabrication of the semiconductor devices. The charge-trapping layer suppresses formation of a parasitic surface conduction layer, and reduces capacitive coupling of the semiconductor devices with the handle substrate during high frequency operation such as operations in gigahertz range.

Abstract: A composite semiconductor substrate includes a semiconductor substrate, an oxygen-doped crystalline semiconductor layer and an insulative layer. The oxygen-doped crystalline semiconductor layer is over the semiconductor substrate, and the oxygen-doped crystalline semiconductor layer includes a crystalline semiconductor material and a plurality of oxygen dopants. The insulative layer is over the oxygen-doped crystalline semiconductor layer.

Abstract: In some embodiments, the present disclosure relates to a high-resistivity silicon-on-insulator (SOI) substrate, including a first polysilicon layer arranged over a semiconductor substrate. A second polysilicon layer is arranged over the first polysilicon layer, and a third polysilicon layer is arranged over the second polysilicon layer. An active semiconductor layer over an insulator layer may be arranged over the third polysilicon layer. The second polysilicon layer has an elevated concentration of oxygen compared to the first and third polysilicon layers.

Abstract: A silicon-on-insulator (SOI) substrate includes a semiconductor substrate and a multi-layered polycrystalline silicon structure. The multi-layered polycrystalline silicon structure is disposed over the semiconductor substrate. The multi-layered polycrystalline silicon structure includes a plurality of doped polycrystalline silicon layers stacked over one another, and an oxide layer between each adjacent pair of doped polycrystalline silicon layers. A number of the doped polycrystalline silicon layer is ranging from 2 to 6.

Abstract: The present disclosure, in some embodiments, relates to a silicon on insulator (SOI) substrate. The SOI substrate includes a dielectric layer disposed over a first substrate. The dielectric layer has an outside edge aligned with an outside edge of the first substrate. An active layer covers a first annular portion of an upper surface of the dielectric layer. The upper surface of the dielectric layer has a second annular portion that surrounds the first annular portion and extends to the outside edge of the dielectric layer. The second annular portion is uncovered by the active layer.

Abstract: Operations in fabricating a Fin FET include providing a substrate having a fin structure, where an upper portion of the fin structure has a first fin surface profile. An isolation region is formed on the substrate and in contact with the fin structure. A portion of the isolation region is recessed by an etch process to form a recessed portion and to expose the upper portion of the fin structure, where the recessed portion has a first isolation surface profile. A thermal hydrogen treatment is applied to the fin structure and the recessed portion. A gate dielectric layer is formed with a substantially uniform thickness over the fin structure, where the recessed portion is adjusted from the first isolation surface profile to a second isolation surface profile and the fin structure is adjusted from the first fin surface profile to a second fin surface profile, by the thermal hydrogen treatment.

Abstract: A method of making a device includes forming an opening in a dielectric layer to expose a conductive region in a substrate. The method further includes depositing a conformal layer of dopant material along sidewalls of the opening and along a top surface of the dielectric layer. The method further includes diffusing the dopant from the conformal layer of dopant material into the dielectric layer using an anneal process.

Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a supporting substrate. The semiconductor device structure also includes a first carrier-trapping layer covering the supporting substrate. The first carrier-trapping layer is doped with a group-IV dopant. The semiconductor device structure further includes an insulating layer covering the first carrier-trapping layer. In addition, the semiconductor device structure includes a semiconductor substrate over the insulating layer. The semiconductor device structure also includes a transistor. The transistor includes a gate stack over the semiconductor substrate and source and drain structures in the semiconductor substrate.

Abstract: A method includes forming a first trench in a semiconductor substrate. A mask is filled in the first trench and over the semiconductor substrate. After filling the mask in the first trench, the mask is patterned to form an opening in the mask. A second trench is formed in the semiconductor substrate. A depth of the second trench is different from a depth of the first trench. After forming the second trench in the semiconductor substrate, the mask is removed. A dielectric material is filled in both the first and second trenches.

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes: a substrate; a fin structure, disposed over the substrate; a gate structure, disposed over the substrate and covering a portion of the fin structure; a first sidewall, disposed over the substrate and surrounding a lower portion of the gate structure; and a second sidewall, disposed over the first sidewall and directly surrounding an upper portion of the gate structure, wherein the first sidewall is orthogonal to the second sidewall.

Abstract: Operations in fabricating a Fin FET include providing a substrate having a fin structure, where an upper portion of the fin structure has a first fin surface profile. An isolation region is formed on the substrate and in contact with the fin structure. A portion of the isolation region is recessed by an etch process to form a recessed portion and to expose the upper portion of the fin structure, where the recessed portion has a first isolation surface profile. A thermal hydrogen treatment is applied to the fin structure and the recessed portion. A gate dielectric layer is formed with a substantially uniform thickness over the fin structure, where the recessed portion is adjusted from the first isolation surface profile to a second isolation surface profile and the fin structure is adjusted from the first fin surface profile to a second fin surface profile, by the thermal hydrogen treatment.