Abstract: A semiconductor device includes a semiconductor substrate, a dielectric feature and an epitaxy feature. The epitaxy feature is on the semiconductor substrate. The epitaxy feature has a top central portion and a corner portion. The dielectric feature is closer to the corner portion than the top central portion, and the corner portion has an impurity concentration higher than that of the top central portion.

Abstract: The present disclosure relates to a semiconductor image sensor device. In some embodiments, the semiconductor image sensor device includes a semiconductor substrate having a first surface configured to receive incident radiation. A plurality of sensor elements are arranged within the semiconductor substrate. A first charged layer is arranged on an entirety of a second surface of the semiconductor substrate facing an opposite direction as the first surface. The second surface is between the first charged layer and the first surface of the semiconductor substrate.

Abstract: A semiconductor device includes a gate stack over a substrate. The semiconductor device further includes an interlayer dielectric (ILD) at least partially enclosing the gate stack. The ILD includes a first portion doped with an oxygen-containing material. The ILD further includes a second portion doped with a large species material, wherein the second portion includes a first sidewall substantially perpendicular to a top surface of the substrate, and the second portion includes a second sidewall having a positive angle with respect to the first sidewall.

Abstract: Various embodiments of the present application are directed to a method for forming a thin semiconductor-on-insulator (SOI) substrate without implantation radiation and/or plasma damage. In some embodiments, a device layer is epitaxially formed on a sacrificial substrate and an insulator layer is formed on the device layer. The insulator layer may, for example, be formed with a net charge that is negative or neutral. The sacrificial substrate is bonded to a handle substrate, such that the device layer and the insulator layer are between the sacrificial and handle substrates. The sacrificial substrate is removed, and the device layer is cyclically thinned until the device layer has a target thickness. Each thinning cycle comprises oxidizing a portion of the device layer and removing oxide resulting from the oxidizing.

Abstract: The mechanisms for cleaning a surface of a semiconductor wafer for a hybrid bonding are provided. The method for cleaning a surface of a semiconductor wafer for a hybrid bonding includes providing a semiconductor wafer, and the semiconductor wafer has a conductive pad embedded in an insulating layer. The method also includes performing a plasma process to a surface of the semiconductor wafer, and metal oxide is formed on a surface of the conductive structure. The method further includes performing a cleaning process using a cleaning solution to perform a reduction reaction with the metal oxide, such that metal-hydrogen bonds are formed on the surface of the conductive structure. The method further includes transferring the semiconductor wafer to a bonding chamber under vacuum for hybrid bonding. The mechanisms for a hybrid bonding and a integrated system are also provided.

Abstract: Embodiments provide a system and method for stateless session synchronization between inspectors for high availability deployments. Man in the Middle inspectors of a communication session between a client and server exchange a shared key that is used as a common seed value in a mapping function algorithm. Each inspector generates identical key-pairs using the common mapping function algorithm, and the inspectors generate the session keys from the key-pairs. Inspectors use the session keys to decrypt and either actively or passively inspect data transferred in a session between a client and server.

Abstract: Methods and systems for high-availability data processing include detecting, at a first data processing system, a change in link state between the first data processing system and a second data processing system. A link state between the first data processing system and a third data processing system is changed responsive to the detection in accordance with a first high availability policy stored at the first data processing system. An identifier of the first data processing system is changed in accordance with the first high availability policy to conform to a second high availability policy stored at the first data processing system. The detection, change of the link state, and change of the identifier are repeated in accordance with the second high availability policy.

Abstract: Embodiments are directed to a method of monitoring a suspicious file, including: receiving, from a web server, a first file; encrypting, by an intermediary network device, the first file; transferring the encrypted file, from the intermediary network device, to an end device; transferring the first file, from the intermediary network device, to a malware analysis device for a malware analysis; and receiving a malware analysis result, from the malware analysis device. If the malware analysis result indicates the first file is not a malware, requesting a key; decrypting the encrypted file using the key; and accessing the decrypted file.

Abstract: A semiconductor device including a gate stack over a substrate. The semiconductor device further includes an interlayer dielectric (ILD) at least partially enclosing the gate stack. The ILD includes a first portion doped with an oxygen-containing material, a second portion doped with a large species material, and a third portion being undoped by the oxygen-containing material and the large species material.

Abstract: Various embodiments of the present application are directed to a method for forming a thin semiconductor-on-insulator (SOI) substrate without implantation radiation and/or plasma damage. In some embodiments, a device layer is epitaxially formed on a sacrificial substrate and an insulator layer is formed on the device layer. The insulator layer may, for example, be formed with a net charge that is negative or neutral. The sacrificial substrate is bonded to a handle substrate, such that the device layer and the insulator layer are between the sacrificial and handle substrates. The sacrificial substrate is removed, and the device layer is cyclically thinned until the device layer has a target thickness. Each thinning cycle comprises oxidizing a portion of the device layer and removing oxide resulting from the oxidizing.

Abstract: Operations in fabricating a Fin FET include providing a substrate having a fin structure, where an upper portion of the fin structure has a first fin surface profile. An isolation region is formed on the substrate and in contact with the fin structure. A portion of the isolation region is recessed by an etch process to form a recessed portion and to expose the upper portion of the fin structure, where the recessed portion has a first isolation surface profile. A thermal hydrogen treatment is applied to the fin structure and the recessed portion. A gate dielectric layer is formed with a substantially uniform thickness over the fin structure, where the recessed portion is adjusted from the first isolation surface profile to a second isolation surface profile and the fin structure is adjusted from the first fin surface profile to a second fin surface profile, by the thermal hydrogen treatment.

Abstract: Embodiments provide a system and method for stateless session synchronization between inspectors for high availability deployments. Man in the Middle inspectors of a communication session between a client and server exchange a shared key that is used as a common seed value in a mapping function algorithm. Each inspector generates identical key-pairs using the common mapping function algorithm, and the inspectors generate the session keys from the key-pairs. Inspectors use the session keys to decrypt and either actively or passively inspect data transferred in a session between a client and server.

Abstract: Various embodiments of the present application are directed towards a method for forming a semiconductor-on-insulator (SOI) substrate with a thick device layer and a thick insulator layer. In some embodiments, the method includes forming an insulator layer covering a handle substrate, and epitaxially forming a device layer on a sacrificial substrate. The sacrificial substrate is bonded to a handle substrate, such that the device layer and the insulator layer are between the sacrificial and handle substrates, and the sacrificial substrate is removed. The removal includes performing an etch into the sacrificial substrate until the device layer is reached. Because the device layer is formed by epitaxy and transferred to the handle substrate, the device layer may be formed with a large thickness. Further, because the epitaxy is not affected by the thickness of the insulator layer, the insulator layer may be formed with a large thickness.

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes: a substrate; a fin structure, disposed over the substrate; a gate structure, disposed over the substrate and covering a portion of the fin structure; a first sidewall, disposed over the substrate and surrounding a lower portion of the gate structure; and a second sidewall, disposed over the first sidewall and directly surrounding an upper portion of the gate structure, wherein the first sidewall is orthogonal to the second sidewall.

Abstract: A silicon-on-insulator (SOI) substrate includes a semiconductor substrate and a multi-layered polycrystalline silicon structure. The multi-layered polycrystalline silicon structure is disposed over the semiconductor substrate. The multi-layered polycrystalline silicon structure includes a plurality of doped polycrystalline silicon layers stacked over one another, and an oxide layer between each adjacent pair of doped polycrystalline silicon layers. A number of the doped polycrystalline silicon layer is ranging from 2 to 6.

Abstract: Various embodiments of the present application are directed to a method for forming a thin semiconductor-on-insulator (SOI) substrate without implantation radiation and/or plasma damage. In some embodiments, a device layer is epitaxially formed on a sacrificial substrate and an insulator layer is formed on the device layer. The insulator layer may, for example, be formed with a net charge that is negative or neutral. The sacrificial substrate is bonded to a handle substrate, such that the device layer and the insulator layer are between the sacrificial and handle substrates. The sacrificial substrate is removed, and the device layer is cyclically thinned until the device layer has a target thickness. Each thinning cycle comprises oxidizing a portion of the device layer and removing oxide resulting from the oxidizing.

Abstract: Various embodiments of the present application are directed towards a method for forming a semiconductor-on-insulator (SOI) substrate with a thick device layer and a thick insulator layer. In some embodiments, the method includes forming an insulator layer covering a handle substrate, and epitaxially forming a device layer on a sacrificial substrate. The sacrificial substrate is bonded to a handle substrate, such that the device layer and the insulator layer are between the sacrificial and handle substrates, and the sacrificial substrate is removed. The removal includes performing an etch into the sacrificial substrate until the device layer is reached. Because the device layer is formed by epitaxy and transferred to the handle substrate, the device layer may be formed with a large thickness. Further, because the epitaxy is not affected by the thickness of the insulator layer, the insulator layer may be formed with a large thickness.

Abstract: A network-based appliance includes a mechanism to provide TLS inspection with session resumption, but without requiring that a session cache be maintained. To this end, the inspector is configured to cause the TLS client to participate in maintaining the session context, in effect on behalf of the TLS inspector. In operation, when the inspector first receives a session ID from the TLS server, the inspector generates and issues to the client a session ticket that includes the original session ID and other session context information. In this manner, the inspector converts the Session ID-based connection to a Session Ticket-based connection. The session ticket is encrypted by the inspector to secure the session information. When the TLS client presents the session ticket to resume the TLS connection, the inspector decrypts the ticket and retrieves the session ID from it directly. The inspector then uses the original session ID to resume the TLS session.

Abstract: A network-based appliance includes a mechanism to provide TLS inspection with session resumption, but without requiring that a session cache be maintained. To this end, the inspector is configured to cause the TLS client to participate in maintaining the session context, in effect on behalf of the TLS inspector. In operation, when the inspector first receives the session ticket from the TLS server, and in lieu of caching it, the inspector generates and issues to the client a composited ticket that includes the original ticket and session context information that contains the session key. The composited ticket is encrypted by the inspector to secure the session information. When the TLS client presents the composited session ticket to resume the TLS connection, the inspector decrypts the ticket and retrieves the session context from it directly. The inspector then uses the original session ticket to resume the TLS session.

Abstract: Operations in fabricating a Fin FET include providing a substrate having a fin structure, where an upper portion of the fin structure has a first fin surface profile. An isolation region is formed on the substrate and in contact with the fin structure. A portion of the isolation region is recessed by an etch process to form a recessed portion and to expose the upper portion of the fin structure, where the recessed portion has a first isolation surface profile. A thermal hydrogen treatment is applied to the fin structure and the recessed portion. A gate dielectric layer is formed with a substantially uniform thickness over the fin structure, where the recessed portion is adjusted from the first isolation surface profile to a second isolation surface profile and the fin structure is adjusted from the first fin surface profile to a second fin surface profile, by the thermal hydrogen treatment.