Abstract: The present disclosure relates to a MIM (metal-insulator-metal) capacitor having a laminated capacitor dielectric layer including alternating layers of high-k dielectric material and high-energy band gap material, and a method of formation. In some embodiments, the MIM capacitor has a laminated capacitor dielectric layer disposed over a capacitor bottom metal layer. The laminated capacitor dielectric layer includes a first layer of a first dielectric material, a second layer of a second dielectric material disposed on top of the first layer, a third layer of a third dielectric material disposed on top of the second layer, and a fourth layer of a fourth dielectric material disposed on top of the third layer. The first and third dielectric materials have a differing capacitance and band gap energy as compared to the second and fourth dielectric materials. A capacitor top metal layer is disposed over the laminated capacitor dielectric layer.

Abstract: An embodiment semiconductor wafer includes a bottom semiconductor layer having a first doping concentration, a middle semiconductor layer over the bottom semiconductor layer, and a top semiconductor layer over the middle semiconductor layer. The middle semiconductor layer has a second doping concentration greater than the first doping concentration, and the top semiconductor layer has a third doping concentration less than the second doping concentration. A lateral surface of the bottom semiconductor layer is an external surface of the semiconductor wafer, and sidewalls of the bottom semiconductor layer, the middle semiconductor layer, and top semiconductor layer are substantially aligned.

Abstract: An embodiment semiconductor wafer includes a bottom semiconductor layer having a first doping concentration, a middle semiconductor layer over the bottom semiconductor layer, and a top semiconductor layer over the middle semiconductor layer. The middle semiconductor layer has a second doping concentration greater than the first doping concentration, and the top semiconductor layer has a third doping concentration less than the second doping concentration. A lateral surface of the bottom semiconductor layer is an external surface of the semiconductor wafer, and sidewalls of the bottom semiconductor layer, the middle semiconductor layer, and top semiconductor layer are substantially aligned.

Abstract: Some embodiments of the present disclosure relate to a method that achieves a substantially uniform pattern of discrete storage elements within a memory cell. A copolymer solution having first and second polymer species is spin-coated onto a surface of a substrate and subjected to self-assembly into a phase-separated material having a regular pattern of micro-domains of the second polymer species within a polymer matrix having the first polymer species. The second polymer species is then removed resulting with a pattern of holes within the polymer matrix. An etch is then performed through the holes utilizing the polymer matrix as a hard-mask to form a substantially identical pattern of holes in a dielectric layer disposed over a seed layer disposed over the substrate surface. Epitaxial deposition onto the seed layer then utilized to grow a substantially uniform pattern of discrete storage elements within the dielectric layer.

Abstract: Some embodiments of the present disclosure relate to a method that achieves a substantially uniform pattern of discrete storage elements comprising a substantially equal size within a memory cell. A copolymer solution comprising first and second polymer species is spin-coated onto a surface of a substrate and subjected to self-assembly into a phase-separated material comprising a regular pattern of micro-domains of the second polymer species within a polymer matrix comprising the first polymer species. The first or second polymer species is then removed resulting with a pattern of micro-domains or the polymer matrix with a pattern of holes, which may be utilized as a hard-mask to form a substantially identical pattern of discrete storage elements through an etch, ion implant technique, or a combination thereof.

Abstract: A thermoplastic elastomer foaming material is provided. The thermoplastic elastomer foaming material includes a hydrogenated styrenic/conjugated diene copolymer in a range from 5 to 35 weight percent; at least one of an acetate copolymer and an acrylate copolymer in a range from 3 to 30 weight percent; an amorphous polyolefin in a range from 20 to 60 weight percent; and a plasticizer in a range from 10 to 40 weight percent.

Abstract: Some embodiments of the present disclosure relate to a method that achieves a substantially uniform pattern of discrete storage elements within a memory cell. A copolymer solution having first and second polymer species is spin-coated onto a surface of a substrate and subjected to self-assembly into a phase-separated material having a regular pattern of micro-domains of the second polymer species within a polymer matrix having the first polymer species. The second polymer species is then removed resulting with a pattern of holes within the polymer matrix. An etch is then performed through the holes utilizing the polymer matrix as a hard-mask to form a substantially identical pattern of holes in a dielectric layer disposed over a seed layer disposed over the substrate surface. Epitaxial deposition onto the seed layer then utilized to grow a substantially uniform pattern of discrete storage elements within the dielectric layer.

Abstract: Some embodiments of the present disclosure relate to a method that achieves a substantially uniform pattern of discrete storage elements within a memory cell. A copolymer solution comprising first and second polymer species is spin-coated onto a surface of a substrate and subjected to self-assembly into a phase-separated material comprising a regular pattern of micro-domains of the second polymer species within a polymer matrix comprising the first polymer species. The second polymer species is then removed resulting with a pattern of holes within the polymer matrix. An etch is then performed through the holes utilizing the polymer matrix as a hard-mask to form a substantially identical pattern of holes in a dielectric layer disposed over a seed layer disposed over the substrate surface. Epitaxial deposition onto the seed layer then utilized to grow a substantially uniform pattern of discrete storage elements within the dielectric layer.

Abstract: Some embodiments of the present disclosure relate to a method that achieves a substantially uniform pattern of discrete storage elements within a memory cell. A copolymer solution comprising first and second polymer species is spin-coated onto a surface of a substrate and subjected to self-assembly into a phase-separated material comprising a regular pattern of micro-domains of the second polymer species within a polymer matrix comprising the first polymer species. The second polymer species is then removed resulting with a pattern of holes within the polymer matrix. An etch is then performed through the holes utilizing the polymer matrix as a hard-mask to form a substantially identical pattern of holes in a dielectric layer disposed over a seed layer disposed over the substrate surface. Epitaxial deposition onto the seed layer then utilized to grow a substantially uniform pattern of discrete storage elements within the dielectric layer.

Abstract: Some embodiments of the present disclosure relate to a method that achieves a substantially uniform pattern of discrete storage elements comprising a substantially equal size within a memory cell. A copolymer solution comprising first and second polymer species is spin-coated onto a surface of a substrate and subjected to self-assembly into a phase-separated material comprising a regular pattern of micro-domains of the second polymer species within a polymer matrix comprising the first polymer species. The first or second polymer species is then removed resulting with a pattern of micro-domains or the polymer matrix with a pattern of holes, which may be utilized as a hard-mask to form a substantially identical pattern of discrete storage elements through an etch, ion implant technique, or a combination thereof.

Abstract: A thermoplastic elastomer foaming material is provided. The thermoplastic elastomer foaming material includes a hydrogenated styrenic/conjugated diene copolymer in a range from 5 to 35 weight percent; at least one of an acetate copolymer and an acrylate copolymer in a range from 3 to 30 weight percent; an amorphous polyolefin in a range from 20 to 60 weight percent; and a plasticizer in a range from 10 to 40 weight percent.

Abstract: The present invention provides a thermoplastic elastomer foaming product, comprising: (a) a hydrogenated styrenic/conjugated diene copolymer, (b) a polyolefin, (c) a plasticizer, and optional additives such as blowing agents, cross-linking agents, promoters, fillers, stabilizers and the like. The thermoplastic elastomer foaming product is soft in nature and has a low specific gravity. The present invention also provides a method of forming the above thermoplastic elastomer foaming product.

Abstract: A low-smoke, halogen-free and flame-retardant thermoplastic elastomer is provided in the present invention. The thermoplastic elastomer includes a polymer having a hydrogenated styrenic/conjugated diene copolymer, an inorganic phosphorus flame-retardant and a flame-retardant auxiliary, wherein a weight of the hydrogenated styrenic/conjugated diene copolymer is 50-100 percents of a weight of the polymer, a weight of the inorganic phosphorus flame-retardant is ranged from 0.3 to 2 times of the weight of the hydrogenated styrenic/conjugated diene copolymer, and a weight of the flame-retardant auxiliary is ranged from 0.05 to 0.4 times of the weight of the hydrogenated styrenic/conjugated diene copolymer.