Patents by Inventor Cheng-Wei Tsai
Cheng-Wei Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11961545Abstract: Various embodiments of the present disclosure are directed towards a memory device. The memory device has a first transistor having a first source/drain and a second source/drain, where the first source/drain and the second source/drain are disposed in a semiconductor substrate. A dielectric structure is disposed over the semiconductor substrate. A first memory cell is disposed in the dielectric structure and over the semiconductor substrate, where the first memory cell has a first electrode and a second electrode, where the first electrode of the first memory cell is electrically coupled to the first source/drain of the first transistor. A second memory cell is disposed in the dielectric structure and over the semiconductor substrate, where the second memory cell has a first electrode and a second electrode, where the first electrode of the second memory cell is electrically coupled to the second source/drain of the first transistor.Type: GrantFiled: December 7, 2022Date of Patent: April 16, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Fa-Shen Jiang, Hsia-Wei Chen, Hsun-Chung Kuang, Hai-Dang Trinh, Cheng-Yuan Tsai
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Patent number: 11956887Abstract: A board, including a first pad area, a second pad area, a first micro heater, a second micro heater, a first heater terminal pad, a second heater terminal pad, and a third heater terminal pad, is provided. The first pad area and the second pad area respectively include at least one pad. The first micro heater and the second micro heater are respectively disposed corresponding to the first pad area and the second pad area. The first heater terminal pad and the second heater terminal pad form a loop with the first micro heater by being electrically connected to an outside, so that the first micro heater generates heat. The second heater terminal pad and the third heater terminal pad form another loop with the second micro heater by being electrically connected to the outside, so that the second micro heater generates heat. A circuit board and a fixture are also provided.Type: GrantFiled: January 27, 2022Date of Patent: April 9, 2024Assignee: Skiileux Electricity Inc.Inventors: Shang-Wei Tsai, Cheng Chieh Chang, Te Fu Chang
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Patent number: 11955329Abstract: A method of forming a semiconductor device includes forming a first conductive feature on a bottom surface of an opening through a dielectric layer. The forming the first conductive feature leaves seeds on sidewalls of the opening. A treatment process is performed on the seeds to form treated seeds. The treated seeds are removed with a cleaning process. The cleaning process may include a rinse with deionized water. A second conductive feature is formed to fill the opening.Type: GrantFiled: April 28, 2023Date of Patent: April 9, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Cheng-Wei Chang, Min-Hsiu Hung, Chun-I Tsai, Ken-Yu Chang, Yi-Ying Liu
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Publication number: 20240099086Abstract: A display may have an array of pixels. Display driver circuitry may supply data and control signals to the pixels. Each pixel may have seven transistors, a capacitor, and a light-emitting diode such as an organic light-emitting diode. The seven transistors may receive control signals using horizontal control lines. Each pixel may have first and second emission enable transistors that are coupled in series with a drive transistor and the light-emitting diode of that pixel. The first and second emission enable transistors may be coupled to a common control line or may be separately controlled so that on-bias stress can be effectively applied to the drive transistor. The display driver circuitry may have gate driver circuits that provide different gate line signals to different rows of pixels within the display. Different rows may also have different gate driver strengths and different supplemental gate line loading structures.Type: ApplicationFiled: November 17, 2023Publication date: March 21, 2024Inventors: Cheng-Ho Yu, Chin-Wei Lin, Shyuan Yang, Ting-Kuo Chang, Tsung-Ting Tsai, Warren S. Rieutort-Louis, Shih-Chang Chang, Yu Cheng Chen, John Z. Zhong
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Publication number: 20240096805Abstract: In an embodiment, a method of forming a structure includes forming a first transistor and a second transistor over a first substrate; forming a front-side interconnect structure over the first transistor and the second transistor; etching at least a backside of the first substrate to expose the first transistor and the second transistor; forming a first backside via electrically connected to the first transistor; forming a second backside via electrically connected to the second transistor; depositing a dielectric layer over the first backside via and the second backside via; forming a first conductive line in the dielectric layer, the first conductive line being a power rail electrically connected to the first transistor through the first backside via; and forming a second conductive line in the dielectric layer, the second conductive line being a signal line electrically connected to the second transistor through the second backside via.Type: ApplicationFiled: December 1, 2023Publication date: March 21, 2024Inventors: Shang-Wen Chang, Yi-Hsun Chiu, Cheng-Chi Chuang, Ching-Wei Tsai, Wei-Cheng Lin, Shih-Wei Peng, Jiann-Tyng Tzeng
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Patent number: 11935841Abstract: A semiconductor package structure and a method for manufacturing a semiconductor package structure are provided. The semiconductor package structure includes a device package and a shielding layer. The device package includes an electronic device unit and has a first surface, a second surface opposite to the first surface, and a third surface connecting the first surface to the second surface. The shielding layer is disposed on the first surface and the second surface of the device package. A common edge of the second surface and the third surface includes a first portion exposed from the shielding layer by a first length, and a common edge of the first surface and the third surface includes a second portion exposed from the shielding layer by a second length that is different from the first length.Type: GrantFiled: November 18, 2022Date of Patent: March 19, 2024Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.Inventors: Cheng-Yuan Kung, Hung-Yi Lin, Meng-Wei Hsieh, Yu-Pin Tsai
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Publication number: 20240088023Abstract: An interconnect structure includes a dielectric layer, a first conductive feature, a hard mask layer, a conductive layer, and a capping layer. The first conductive feature is disposed in the dielectric layer. The hard mask layer is disposed on the first conductive feature. The conductive layer includes a first portion and a second portion, the first portion of the conductive layer is disposed over at least a first portion of the hard mask layer, and the second portion of the conductive layer is disposed over the dielectric layer. The hard mask layer and the conductive layer are formed by different materials. The capping layer is disposed on the dielectric layer and the conductive layer.Type: ApplicationFiled: November 20, 2023Publication date: March 14, 2024Inventors: Shao-Kuan LEE, Kuang-Wei YANG, Cherng-Shiaw TSAI, Cheng-Chin LEE, Ting-Ya LO, Chi-Lin TENG, Hsin-Yen HUANG, Hsiao-Kang CHANG, Shau-Lin SHUE
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Publication number: 20240076422Abstract: A supported metallocene catalyst includes a carrier and a metallocene component. The carrier includes an inorganic oxide particle and an alkyl aluminoxane material. The inorganic oxide particle includes at least one inorganic oxide compound selected from the group consisting of an oxide of Group 3A and an oxide of Group 4A. The alkyl aluminoxane material includes an alkyl aluminoxane compound and an alkyl aluminum compound that is present in amount ranging from greater than 0.01 wt % to less than 14 wt % base on 100 wt % of the alkyl aluminoxane material. The metallocene component is supported on the carrier, and includes one of a metallocene compound containing a metal from Group 3B, a metallocene compound containing a metal from Group 4B, and a combination thereof. A method for preparing the supported metallocene catalyst and a method for preparing polyolefin using the supported metallocene catalyst are also disclosed.Type: ApplicationFiled: September 1, 2023Publication date: March 7, 2024Inventors: Jing-Cherng TSAI, Jen-Long WU, Wen-Hao KANG, Kuei-Pin LIN, Jing-Yu LEE, Jun-Ye HONG, Zih-Yu SHIH, Cheng-Hung CHIANG, Gang-Wei SHEN, Yu-Chuan SUNG, Chung-Hua WENG, Hsing-Ya CHEN
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Publication number: 20240079440Abstract: A multispectral sensing device includes a first die, including silicon, which is patterned to define a first array of sensor elements, which output first electrical signals in response to optical radiation that is incident on the device in a band of wavelengths less than 1000 nm that is incident on the front side of the first die. A second die has its first side bonded to the back side of the first die and includes a photosensitive material and is patterned to define a second array of sensor elements, which output second electrical signals in response to the optical radiation that is incident on the device in a second band of wavelengths greater than 1000 nm that passes through the first die and is incident on the first side of the second die. Readout circuitry reads the first electrical signals and the second electrical signals serially out of the device.Type: ApplicationFiled: September 6, 2022Publication date: March 7, 2024Inventors: Oray O. Cellek, Fei Tan, Gershon Rosenblum, Hong Wei Lee, Cheng-Ying Tsai, Jae Y. Park, Christophe Verove, John L Orlowski, Siddharth Joshi, Xiangli Li, David Coulon, Xiaofeng Fan, Keith Lyon, Nicolas Hotellier, Arnaud Laflaquière
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Publication number: 20240071947Abstract: A semiconductor package including a ring structure with one or more indents and a method of forming are provided. The semiconductor package may include a substrate, a first package component bonded to the substrate, wherein the first package component may include a first semiconductor die, a ring structure attached to the substrate, wherein the ring structure may encircle the first package component in a top view, and a lid structure attached to the ring structure. The ring structure may include a first segment, extending along a first edge of the substrate, and a second segment, extending along a second edge of the substrate. The first segment and the second segment may meet at a first corner of the ring structure, and a first indent of the ring structure may be disposed at the first corner of the ring structure.Type: ApplicationFiled: August 30, 2022Publication date: February 29, 2024Inventors: Yu-Ling Tsai, Lai Wei Chih, Meng-Tsan Lee, Hung-Pin Chang, Li-Han Hsu, Chien-Chia Chiu, Cheng-Hung Lin
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Patent number: 11574436Abstract: The disclosure provides a mixed rendering system and a mixed rendering method. The mixed rendering system includes a client device configured to perform: determining at least one user-interactable object of a virtual environment; rendering the at least one user-interactable object; receiving a background scene frame of the virtual environment; blending the at least one rendered user-interactable object with the background scene frame as a visual content of the virtual environment; and providing the visual content of the virtual environment.Type: GrantFiled: June 9, 2021Date of Patent: February 7, 2023Assignee: HTC CorporationInventors: Jung-Sen Yang, Jing-Lung Wu, Cheng-Wei Tsai, Jiun-Lin Chen
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Patent number: 11498830Abstract: The invention provides a MEMS microphone. The MEMS microphone includes a substrate, having a first opening. A dielectric layer is disposed on the substrate, wherein the dielectric layer has a second opening aligned to the first opening. A diaphragm is disposed within the second opening of the dielectric layer, wherein a peripheral region of the diaphragm is embedded into the dielectric layer at sidewall of the second opening. A backplate layer is disposed on the dielectric layer and covering over the second opening. The backplate layer includes a plurality of acoustic holes arranged into a regular array pattern. The regular array pattern comprises a pattern unit, the pattern unit comprises one of the acoustic holes as a center hole, and peripheral holes of the acoustic holes surrounding the center hole with a same pitch to the center hole.Type: GrantFiled: March 9, 2020Date of Patent: November 15, 2022Assignee: Solid State System Co., Ltd.Inventors: Cheng-Wei Tsai, Tsung-Min Hsieh, Chien-Hsing Lee
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Publication number: 20220187626Abstract: The present invention provides an intelligent virtual display device including a contact lens. The contact lens has a central area thereon, a micro display disposed outside the central area, a wearable reflector disposed corresponding to the micro display and configured to receive and to reflect images of the micro display, and a controller. The controller is connected with the micro display and configured to send the control signals to the micro display so as to generate the images. The contact lens is designed for being worn on a user's eyeball. When the eyeball rotates, the micro display changes its projection direction simultaneously to match the user's visual angle.Type: ApplicationFiled: March 1, 2021Publication date: June 16, 2022Applicant: National Yang Ming Chiao Tung UniversityInventors: Mang OU-YANG, Sheng Chun HUNG, Yen Jui CHEN, Yung-Jhe YAN, Jin-Chern CHIOU, Cheng-Wei TSAI
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Publication number: 20220127134Abstract: A structure of micro-electro-mechanical-system (MEMS) microphone includes a substrate, having a first opening. A dielectric layer is disposed on the substrate, wherein the dielectric layer has a second opening aligned to the first opening. A membrane is disposed within the second opening of the dielectric layer. A peripheral region of the membrane is embedded into the dielectric layer at sidewall of the second opening. A backplate layer is disposed on the dielectric layer. The backplate layer includes a protection layer, having a peripheral region disposed on the dielectric layer and a central region with venting holes over the second opening. The central region of the protection layer further has anti-sticky structures at a side of the protection layer toward the membrane. An electrode layer is disposed on the side of the protection layer, surrounding the anti-sticky structures.Type: ApplicationFiled: October 27, 2020Publication date: April 28, 2022Applicant: Solid State System Co., Ltd.Inventors: Tsung-Min Hsieh, Chien-Hsing Lee, Cheng-Wei Tsai
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Patent number: 11317220Abstract: In an embodiment, the invention provides a structure of MEMS microphone includes a substrate of semiconductor, having a first opening in the substrate. A dielectric layer is disposed on the substrate, having a dielectric opening. A diaphragm is within the dielectric opening and held by the dielectric layer at a peripheral region, wherein the diaphragm has a diaphragm opening. A back-plate is disposed on the dielectric layer, over the diaphragm. A protruding structure is disposed on the back-plate, protruding toward the diaphragm. At least one air valve plate is affixed on an end of the protruding structure within the diaphragm opening of the diaphragm. The air valve plate is activated when suffering an air flow with a pressure.Type: GrantFiled: December 18, 2019Date of Patent: April 26, 2022Assignee: Solid State System Co., Ltd.Inventors: Tsung-Min Hsieh, Cheng-Wei Tsai, Chien-Hsing Lee
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Patent number: 11312616Abstract: A structure of micro-electro-mechanical-system (MEMS) microphone includes a substrate, having a first opening. A dielectric layer is disposed on the substrate, wherein the dielectric layer has a second opening aligned to the first opening. A membrane is disposed within the second opening of the dielectric layer. A peripheral region of the membrane is embedded into the dielectric layer at sidewall of the second opening. A backplate layer is disposed on the dielectric layer. The backplate layer includes a protection layer, having a peripheral region disposed on the dielectric layer and a central region with venting holes over the second opening. The central region of the protection layer further has anti-sticky structures at a side of the protection layer toward the membrane. An electrode layer is disposed on the side of the protection layer, surrounding the anti-sticky structures.Type: GrantFiled: October 27, 2020Date of Patent: April 26, 2022Assignee: Solid State System Co., Ltd.Inventors: Tsung-Min Hsieh, Chien-Hsing Lee, Cheng-Wei Tsai
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Publication number: 20210390769Abstract: The disclosure provides a mixed rendering system and a mixed rendering method. The mixed rendering system includes a client device configured to perform: determining at least one user-interactable object of a virtual environment; rendering the at least one user-interactable object; receiving a background scene frame of the virtual environment; blending the at least one rendered user-interactable object with the background scene frame as a visual content of the virtual environment; and providing the visual content of the virtual environment.Type: ApplicationFiled: June 9, 2021Publication date: December 16, 2021Applicant: HTC CorporationInventors: Jung-Sen Yang, Jing-Lung Wu, Cheng-Wei Tsai, Jiun-Lin Chen
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Patent number: 11172287Abstract: A structure of micro-electro-mechanical-system microphone includes a substrate of semiconductor, having a first opening in the substrate. A dielectric layer is disposed on the substrate, the dielectric layer has a second opening, corresponding to the first opening. A diaphragm is located within the second opening, having an embedded part held by the dielectric layer and an exposed part exposed by the second opening. The exposed part has a junction peripheral region, a buffer peripheral region and a central region. The junction region has an elastic structure with slits, the buffer peripheral region includes a plurality of holes and is disposed between the junction peripheral region and the central region. A backplate is disposed on the dielectric layer above the second opening, wherein the backplate includes venting holes distributed at a region corresponding to the central part of the diaphragm.Type: GrantFiled: November 5, 2019Date of Patent: November 9, 2021Assignee: Solid State System Co., Ltd.Inventors: Tsung-Min Hsieh, Cheng-Wei Tsai, Chien-Hsing Lee
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Publication number: 20210276857Abstract: The invention provides a MEMS microphone. The MEMS microphone includes a substrate, having a first opening. A dielectric layer is disposed on the substrate, wherein the dielectric layer has a second opening aligned to the first opening. A diaphragm is disposed within the second opening of the dielectric layer, wherein a peripheral region of the diaphragm is embedded into the dielectric layer at sidewall of the second opening. A backplate layer is disposed on the dielectric layer and covering over the second opening. The backplate layer includes a plurality of acoustic holes arranged into a regular array pattern. The regular array pattern comprises a pattern unit, the pattern unit comprises one of the acoustic holes as a center hole, and peripheral holes of the acoustic holes surrounding the center hole with a same pitch to the center hole.Type: ApplicationFiled: March 9, 2020Publication date: September 9, 2021Applicant: Solid State System Co., Ltd.Inventors: Cheng-Wei Tsai, Tsung-Min Hsieh, Chien-Hsing Lee
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Publication number: 20210195340Abstract: In an embodiment, the invention provides a structure of MEMS microphone includes a substrate of semiconductor, having a first opening in the substrate. A dielectric layer is disposed on the substrate, having a dielectric opening. A diaphragm is within the dielectric opening and held by the dielectric layer at a peripheral region, wherein the diaphragm has a diaphragm opening. A back-plate is disposed on the dielectric layer, over the diaphragm. A protruding structure is disposed on the back-plate, protruding toward the diaphragm. At least one air valve plate is affixed on an end of the protruding structure within the diaphragm opening of the diaphragm. The air valve plate is activated when suffering an air flow with a pressure.Type: ApplicationFiled: December 18, 2019Publication date: June 24, 2021Applicant: Solid State System Co., Ltd.Inventors: Tsung-Min Hsieh, Cheng-Wei Tsai, Chien-Hsing Lee