Abstract: The present disclosure provides a method of manufacturing a semiconductor device. The method includes: forming a first semiconductor layer on an inner surface of a trench of a substrate; forming a second semiconductor layer on the first semiconductor layer on the inner surface of the trench of the substrate; forming another first semiconductor layer on the second semiconductor layer on the inner surface of the trench of the substrate; forming another second semiconductor layer on the another first semiconductor layer on the inner surface of the trench of the substrate, in which the second semiconductor layer is sandwiched between the first semiconductor layer and the another first semiconductor layer, and the another first semiconductor layer is sandwiched between the second semiconductor layer and the another second semiconductor layer; and forming a third semiconductor layer on the another second semiconductor layer.

Abstract: A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a word line structure. The semiconductor substrate has an active region. The word line structure is disposed in the active region of the semiconductor substrate. The word line structure includes a first work function layer, a second work function layer, and a buffer structure. The second work function layer is on the first work function layer. The buffer structure is between the first work function layer and the second work function layer.

Abstract: A light-emitting device and a manufacturing method thereof are provided. The light-emitting device includes a light-emitting chip, a first reflective layer, a light-permeable layer, an adhesive material, and a second reflective layer. The light-emitting chip has a light-emitting surface. The first reflective layer surrounds a first side surface of the light-emitting chip. The light-permeable layer is disposed on the light-emitting surface of the light-emitting chip and has a light-exiting surface and a second side surface. The adhesive material has a central portion and an extension portion. The central portion corresponds to the light-emitting surface. The extension portion is connected to the central portion and is located on a first upper surface of the first reflective layer. The second reflective layer is disposed on the first reflective layer to surround the second side surface of the light-permeable layer and cover the extension portion.

Abstract: The present disclosure provides a method of manufacturing a semiconductor device. The method includes: depositing a first semiconductor layer on an inner surface of a trench of a substrate; depositing a second semiconductor layer on the first semiconductor layer on the inner surface of the trench of the substrate, in which a dopant concentration of the first semiconductor layer is less than a dopant concentration of the second semiconductor layer; and depositing a third semiconductor layer on the second semiconductor layer to fill the trench of the substrate, in which a dopant concentration of the third semiconductor layer is less than the dopant concentration of the second semiconductor layer.

Abstract: The present disclosure provides a manufacturing method of a semiconductor structure including the following steps. A trench is formed between bit lines. A seed layer is deposited in the trench, and a first contact layer is deposited on the seed layer in the trench. A second contact layer is deposited on the first contact layer to fill the trench, in which a second doping concentration of the second contact layer is lower than a first doping concentration of the first contact layer. An annealing process is performed on the first contact layer and the second contact layer, such that dopants in the first contact layer diffuse into the second contact layer to form a contact plug including the first contact layer and the second contact layer.

Abstract: A machine learning optimization circuit and a method thereof are provided. The method includes steps of: generating a local feature matrix from an extraction range in a feature tensor matrix, and the local feature matrix includes feature values of X columns, Y rows, and Z channels; partitioning W sub-feature matrices from the local feature matrix, and each of the W sub-feature matrices includes X×Y×Z/W feature values; simultaneously performing parallel dot product operations on the W sub-feature matrices by W×K parallel operation modules to generate W×K temporary feature matrices; and integrating the W×K temporary feature matrices into a local feature output matrix corresponding to the local feature matrix, and the local feature output matrix includes feature values of X columns, Y rows, and Z channels.

Abstract: A display device and a housing of the display device are provided. The housing of the display device includes a reflective cover. The reflective cover has a plurality of segments formed on a front side of the reflective cover and a plurality of segment structures correspondingly formed on a rear side of the reflective cover. At least one of the segment structures has a notch formed thereat. Positions of the notches of the at least two adjacent ones of the segment structures are not opposite to each other.

Abstract: A wearable device for measuring blood pressure comprises a housing with through-holes formed thereon, a processing unit disposed in the housing, a display connected to the processing unit, a plurality of sensors connected to the processing unit, the sensors being configured to transmit at least one physiological signal to the processing unit via the through-holes, and a time delay structure connected between one of the through-holes and one of the sensors and configured to lengthen a path distance between the skin surface and the sensor, wherein the processing unit is configured to determine a systolic arterial pressure and a diastolic arterial pressure by the at least one physiological signal and a Moens-Korteweg (MK) function, and to control the display to display the systolic arterial pressure and the diastolic arterial pressure to be read by the user.

Abstract: The present disclosure provides semiconductor structure having an electrical contact. The semiconductor structure includes a semiconductor substrate and a doped polysilicon contact. The doped polysilicon contact is disposed over the semiconductor substrate. The doped polysilicon contact includes a dopant material having a dopant concentration equaling or exceeding about 1015 atom/cm3.

Abstract: A physiological signal measurement device is disclosed. In some implementations, the physiological signal measurement device includes a fixing element, a rack, a first sensor, and a second sensor. The fixing element is configured to be fixed on a limb of a user. The rack is configured to engage the fixing element and includes a first end and a second end distal to the first end. The first sensor is disposed on the first end of the rack. The sensor is disposed on the second end of the rack. The first end of the rack has a first stiffness, the second end of the rack has a second stiffness, and the first stiffness is higher than the second stiffness.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes providing a semiconductor substrate having a trench. The method also includes forming a first buffer layer in the trench. The method further includes forming a doped-polysilicon layer on the first buffer layer in the trench. The method also includes performing a thermal treatment on the doped-polysilicon layer.

Abstract: In an example in accordance with the present disclosure, a method is described. According to the method, boundary values for a setting for a signal between a compute device and a peripheral device are determined. A target value for the setting is determined. The target value is a value between determined boundary values. The setting for the signal is adjusted to match the target value.

Abstract: The present application provides a method of fabricating a semiconductor device. The method includes steps of forming a transistor in a substrate; depositing an insulative layer on the substrate; forming a first trench penetrating through the insulative layer to expose a portion of a first impurity region of the transistor; performing a first cyclic process comprising a first sequence of a first deposition step and a first removal step to deposit a conductive material in the first trench until a height of the conductive material in the first trench exceeds a predetermined height; filling the first trench with the conductive material after the first cyclic process; forming a storage capacitor contacting the first conductive feature; and depositing an isolation layer to cover the insulative layer and the storage capacitor.

Abstract: Disclosed is design optimization method of the structure considering centrifugal loads and stress constraints. Compared with the prior art, this application improves the method for obtaining the relaxation coefficient c, including the calculation of the second predicted maximum stress based on the predicted stress method from steps S9.1 to S9.8. The influence of the existence of jagged boundaries and gray densities on the calculation of the structural stress field is reduced. The most important thing is to decide whether to use linear penalty or nonlinear penalty for the elastic modulus of each element according to the ratio of the number of elements with design variables less than 0.1 and greater than 0.9 to the total number of elements. Introducing the predicted maximum stress can make full use of the allowable stress of materials, improve the quality of optimization design, and obtain a design scheme with a lighter mass.

Abstract: The present application provides a method of fabricating a conductive feature. The method of fabricating the conductive feature includes steps of depositing an insulative layer on a substrate, forming a trench in the insulative layer, performing a cyclic process comprising a sequence of a deposition step and a removal step to deposit a conductive material in the trench until the deposition step has been performed is equal to a first preset number of times and a number of the times the removal step has been performed is equal to a second preset number of times, and filling the trench with the conductive material after the cyclic process.

Abstract: The present disclosure provides a method of manufacturing a semiconductor structure having an electrical contact. The method includes providing a semiconductor substrate; forming a dielectric structure over the semiconductor substrate, the dielectric structure having a trench; filling a polysilicon material in the trench of the dielectric structure; detecting the polysilicon material to determine a region of the polysilicon material having one or more defects formed therein; implanting the polysilicon material with a dopant material into the region; and annealing the polysilicon material to form a doped polysilicon contact.

Abstract: The present invention relates to knowledge graph reasoning model, system and reasoning method based on Bayesian few-shot learning, wherein the method at least comprises: building a Gaussian mixture model to entities and relations in a knowledge graph so as to reduce uncertainty of the knowledge graph; taking each said entity as a task to simulate a meta-training process of a newly appearing entity in the dynamic knowledge graph and perform task sampling; constructing a meta learner based on a graph neural network and conducing random reasoning; and training the meta learner so as to use a support set to represent the newly appearing entity. The trained knowledge graph reasoning model in the present invention is highly adaptive and able to infer new facts or new entities without retraining.

Abstract: The present invention provides an electrocardiographic monitoring device comprising a device body configured to be attached to a user's chest; a plurality of electrodes provided on the device body; and a controller provided on the device body and connected to the electrodes in order to obtain the user's electrocardiographic signal waveforms. The electrocardiographic monitoring device of the invention can be applied in a blood pressure monitoring system for monitoring a user's blood pressure.

Abstract: The present disclosure provides a method of manufacturing a semiconductor device. The method includes: depositing a first semiconductor layer on an inner surface of a trench of a substrate; depositing a second semiconductor layer on the first semiconductor layer on the inner surface of the trench of the substrate, in which a dopant concentration of the first semiconductor layer is less than a dopant concentration of the second semiconductor layer; and depositing a third semiconductor layer on the second semiconductor layer to fill the trench of the substrate, in which a dopant concentration of the third semiconductor layer is less than the dopant concentration of the second semiconductor layer.