Abstract: In an example in accordance with the present disclosure, a method is described. According to the method, boundary values for a setting for a signal between a compute device and a peripheral device are determined. A target value for the setting is determined. The target value is a value between determined boundary values. The setting for the signal is adjusted to match the target value.

Abstract: Disclosed is design optimization method of the structure considering centrifugal loads and stress constraints. Compared with the prior art, this application improves the method for obtaining the relaxation coefficient c, including the calculation of the second predicted maximum stress based on the predicted stress method from steps S9.1 to S9.8. The influence of the existence of jagged boundaries and gray densities on the calculation of the structural stress field is reduced. The most important thing is to decide whether to use linear penalty or nonlinear penalty for the elastic modulus of each element according to the ratio of the number of elements with design variables less than 0.1 and greater than 0.9 to the total number of elements. Introducing the predicted maximum stress can make full use of the allowable stress of materials, improve the quality of optimization design, and obtain a design scheme with a lighter mass.

Abstract: The present application provides a method of fabricating a semiconductor device. The method includes steps of forming a transistor in a substrate; depositing an insulative layer on the substrate; forming a first trench penetrating through the insulative layer to expose a portion of a first impurity region of the transistor; performing a first cyclic process comprising a first sequence of a first deposition step and a first removal step to deposit a conductive material in the first trench until a height of the conductive material in the first trench exceeds a predetermined height; filling the first trench with the conductive material after the first cyclic process; forming a storage capacitor contacting the first conductive feature; and depositing an isolation layer to cover the insulative layer and the storage capacitor.

Abstract: The present application provides a method of fabricating a conductive feature. The method of fabricating the conductive feature includes steps of depositing an insulative layer on a substrate, forming a trench in the insulative layer, performing a cyclic process comprising a sequence of a deposition step and a removal step to deposit a conductive material in the trench until the deposition step has been performed is equal to a first preset number of times and a number of the times the removal step has been performed is equal to a second preset number of times, and filling the trench with the conductive material after the cyclic process.

Abstract: The present disclosure provides a method of manufacturing a semiconductor structure having an electrical contact. The method includes providing a semiconductor substrate; forming a dielectric structure over the semiconductor substrate, the dielectric structure having a trench; filling a polysilicon material in the trench of the dielectric structure; detecting the polysilicon material to determine a region of the polysilicon material having one or more defects formed therein; implanting the polysilicon material with a dopant material into the region; and annealing the polysilicon material to form a doped polysilicon contact.

Abstract: The present invention relates to knowledge graph reasoning model, system and reasoning method based on Bayesian few-shot learning, wherein the method at least comprises: building a Gaussian mixture model to entities and relations in a knowledge graph so as to reduce uncertainty of the knowledge graph; taking each said entity as a task to simulate a meta-training process of a newly appearing entity in the dynamic knowledge graph and perform task sampling; constructing a meta learner based on a graph neural network and conducing random reasoning; and training the meta learner so as to use a support set to represent the newly appearing entity. The trained knowledge graph reasoning model in the present invention is highly adaptive and able to infer new facts or new entities without retraining.

Abstract: The present invention provides an electrocardiographic monitoring device comprising a device body configured to be attached to a user's chest; a plurality of electrodes provided on the device body; and a controller provided on the device body and connected to the electrodes in order to obtain the user's electrocardiographic signal waveforms. The electrocardiographic monitoring device of the invention can be applied in a blood pressure monitoring system for monitoring a user's blood pressure.

Abstract: The present disclosure provides a method of manufacturing a semiconductor device. The method includes: depositing a first semiconductor layer on an inner surface of a trench of a substrate; depositing a second semiconductor layer on the first semiconductor layer on the inner surface of the trench of the substrate, in which a dopant concentration of the first semiconductor layer is less than a dopant concentration of the second semiconductor layer; and depositing a third semiconductor layer on the second semiconductor layer to fill the trench of the substrate, in which a dopant concentration of the third semiconductor layer is less than the dopant concentration of the second semiconductor layer.

Abstract: A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a word line structure. The semiconductor substrate has an active region. The word line structure is disposed in the active region of the semiconductor substrate. The word line structure includes a first work function layer, a second work function layer, and a buffer structure. The second work function layer is on the first work function layer. The buffer structure is between the first work function layer and the second work function layer.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes providing a semiconductor substrate having a trench. The method also includes forming a first buffer layer in the trench. The method further includes forming a doped-polysilicon layer on the first buffer layer in the trench. The method also includes performing a thermal treatment on the doped-polysilicon layer.

Abstract: The present invention provides a frame transmission method of an electronic device, wherein the frame transmission method includes the steps of: receiving a pause frame from another electronic device, wherein the pause frame includes a plurality of inter frame gap control indicator, and each of the inter frame gap control indicator includes a plurality of packet size ranges and corresponding pause times; selecting one of the inter frame gap control indicator according to a priority of a first packet to be sent to the other electronic device, and determining a first inter frame gap according to which packet size range the first packet belongs to; and after a first frame including the first packet is sent to the other electronic device, at least waiting for the first inter frame gap before starting to send a second frame to the other electronic device.

Abstract: An electronics unit (EU) stand may include a base and a fan carrier. The base is to couple to an electronics unit having heat generating components. The fan carrier supports a fan. The fan carrier is movably coupled to the base to move the fan between a first position relative to the base and second position relative to the base.

Abstract: The present disclosure provides semiconductor structure having an electrical contact. The semiconductor structure includes a semiconductor substrate and a doped polysilicon contact. The doped polysilicon contact is disposed over the semiconductor substrate. The doped polysilicon contact includes a dopant material having a dopant concentration equaling or exceeding about 1015 atom/cm3.

Abstract: The present disclosure provides a method of manufacturing a semiconductor structure having an electrical contact. The method includes providing a semiconductor substrate; forming a dielectric structure over the semiconductor substrate, the dielectric structure having a trench; filling a polysilicon material in the trench of the dielectric structure; detecting the polysilicon material to determine a region of the polysilicon material having one or more defects formed therein; implanting the polysilicon material with a dopant material into the region; and annealing the polysilicon material to form a doped polysilicon contact.

Abstract: The present invention provides a frame transmission method of an electronic device, wherein the frame transmission method includes the steps of: receiving a pause frame from another electronic device, wherein the pause frame includes a plurality of inter frame gap control indicator, and each of the inter frame gap control indicator includes a plurality of packet size ranges and corresponding pause times; selecting one of the inter frame gap control indicator according to a priority of a first packet to be sent to the other electronic device, and determining a first inter frame gap according to which packet size range the first packet belongs to; and after a first frame including the first packet is sent to the other electronic device, at least waiting for the first inter frame gap before starting to send a second frame to the other electronic device.

Abstract: Disclosed is a recycling purification and reuse system for farmland tail water, which includes a water collecting pool, a water purifying pool and a clean water pool; the water purifying pool is correspondingly arranged with the clean water pool; the water collecting pool is located above the side of the water purifying pool far away from the clean water pool; one side of the water collecting pool close to the water purifying pool is provided with an opening; the opening is provided with a filtering mechanism; the filtering mechanism is correspondingly arranged with the water purifying pool; a water pumping mechanism is arranged in the water purifying pool; and the water outlet end of the pumping mechanism is correspondingly arranged with the clean water pool.

Abstract: In one example, an electronic device may include an electronic switch connected to a power supply, a controller connected to the electronic switch, an electromagnetic generator connected to the controller, and a power button coupled to the electro-magnetic generator. The electromagnetic generator may generate an induced current when the power button is pressed. Further, the controller may receive the induced current and output a control signal to the electronic switch to enable the electronic switch to control the power supply to the electronic device.

Abstract: In an example in accordance with the present disclosure, a compute device is described. The compute device includes a thermal sensor to measure a temperature at a hardware component of the compute device. The compute device also includes a controller. The controller is to determine a threshold temperature for the hardware component. Responsive to a measured temperature being beyond the threshold temperature for the hardware component, the controller is to activate a temperature control element adjacent the hardware component. The compute device also includes the temperature control element adjacent the hardware component to control the temperature of the hardware component.

Abstract: The present invention provides a dynamic measurement device with a blood pressure determination function, comprising: a heartbeat sensing module disposed on the chest area of a user wherein the heartbeat sensing module comprising a heart sound sensor for obtaining heartbeat signals; a pulse sensing module disposed on a limb area of the user, the pulse sensing module comprising a pulse wave sensor for obtaining pulse signals; and a data calculating module for calculating a mean arterial pressure and a value of systolic blood pressure and diastolic blood pressure based on the heartbeat signals and pulse signals. In addition to dynamically monitoring the blood pressure of a user for 24 hours, the present invention can dynamically monitor the heart sounds of the user for 24 hours individually in order to monitor user's physical condition. Therefore, the present invention has important medical meanings.

Abstract: The disclosure discloses a synthetic method for benzimidazo[1,2-c]quinazolin-6-ones and belongs to the field of organic synthesis. In the disclosure, an ?-ketoamide compound shown as Formula I and an o-phenylenediamine compound shown as Formula II are used as substrates and undergo a reaction under the action of a catalyst and a base to obtain benzimidazo[1,2-c]quinazolin-6-ones shown as Formula III. In the disclosure, benzimidazo[1,2-c]quinazolin-6-ones are prepared based on a novel and efficient action mechanism, and the disclosure has the advantages that the raw materials are cheap, the catalyst is cheap and easy to obtain, the reaction is efficient and environmentally friendly, the substrate range is wide, the yield is high, and the operation is simple.