Abstract: Various embodiments of the present disclosure are directed to a stacked complementary metal-oxide semiconductor (CMOS) image sensor. A first integrated circuit (IC) chip and a second IC chip are vertically stacked. A pixel sensor spans the first and second IC chips. The pixel sensor comprises a first transfer transistor and a photodetector that are at the first IC chip, and further comprises a source-follower transistor, a transistor capacitor, and a second transfer transistor that are at the second IC chip. The transistor capacitor and the second transfer transistor are electrically coupled in series from a source/drain region of the first transfer transistor to a gate electrode of the source-follower transistor.

Abstract: A measuring system and a measuring method of an antenna pattern based on near field to far field transformation (NFTF) are provided. The measuring system includes a probe antenna, a reference antenna, and a control system. The probe antenna measures an electric field radiated by an antenna under test to obtain electric field information. The reference antenna measures the electric field to obtain a reference phase. The control system is coupled to the antenna under test, the probe antenna, and the reference antenna, wherein the control system applies near field focusing to the reference antenna to configure a focus point of the reference antenna on the antenna under test, and the control system performs the NFTF according to the electric field information and the reference phase to output far field patterns.

Abstract: An accelerator system includes an off-chip memory, a bus, and an accelerator. The off-chip memory includes a first buffer. The accelerator includes a second buffer, a third buffer, a fourth buffer, an instruction fetching module, a load module, a storage module, a convolution control module, and a computation module. The instruction fetching module fetches instructions from the off-chip memory via the bus. The load module loads input data from the off-chip memory via the bus. The storage module stores the output data to the off-chip memory via the bus. The computation module performs convolution computations based on the input map and multiple kernels allocated by the convolution module. In response to loading the input data or instruction from the off-chip memory, the requested input data or instruction is transferred from the off-chip memory and temporarily stored in the first buffer.

Abstract: A volume measurement method includes: receiving multiple pulse signals when a device under test (DUT) starts passing through a sensing gate; recording multiple X-axis values corresponding to multiple positions of the DUT in response to each pulse signal, and reading the multiple sensing data to calculate a Y-axis value and a Z-axis value corresponding to each X-axis value, wherein the multiple sensing data is obtained by sensing the DUT through the sensing gate; recording a maximum X-axis value corresponding to a final position of the DUT in response to a final pulse signal when the DUT finishes passing through the sensing gate; setting the maximum of the multiple Y-axis values corresponding to the multiple X-axis values as a maximum Y-axis value, and setting the maximum of the multiple Z-axis values corresponding to the multiple X-axis values as a maximum Z-axis value; and calculating a volume of the DUT based on the maximum X-axis value, the maximum Y-axis value and the maximum Z-axis value.

Abstract: A semiconductor device includes a substrate having fins and trenches in between the fins, a plurality of insulators, a first metal layer, an insulating layer, a second metal layer and an interlayer dielectric. The insulators are disposed within the trenches of the substrate. The first metal layer is disposed on the plurality of insulators and across the fins. The insulating layer is disposed on the first metal layer over the plurality of insulators and across the fins. The second metal layer is disposed on the insulating layer over the plurality of insulators and across the fins. The interlayer dielectric is disposed on the insulators and covering the first metal layer, the insulating layer and the second metal layer.

Abstract: A container for receiving a semiconductor device is provided. In one embodiment, the wafer holder assembly includes a first wafer holder with a plurality of first fingers arranged in a first common horizontal plane and a second wafer holder with a plurality of second fingers arranged in a second common horizontal plane. The first wafer holder and the second holder are configured to move relative to each other in a vertical direction, and the first wafer holder and the second holder are configured to rotate relative to each other around a vertical axis.

Abstract: A measuring system and a measuring method of an antenna pattern based on near field to far field transformation (NFTF) are provided. The measuring system includes a probe antenna, a reference antenna, and a control system. The probe antenna measures an electric field radiated by an antenna under test to obtain electric field information. The reference antenna measures the electric field to obtain a reference phase. The control system is coupled to the antenna under test, the probe antenna, and the reference antenna, wherein the control system applies near field focusing to the reference antenna to configure a focus point of the reference antenna on the antenna under test, and the control system performs the NFTF according to the electric field information and the reference phase to output far field patterns.

Abstract: An electronic package and a manufacturing method thereof are provided, in which a cover is disposed on a carrier structure having an electronic element, and the electronic element is covered by the cover. A magnetic conductive member is arranged between the cover and the electronic element, and an air gap is formed between the magnetic conductive member and the cover to enhance the shielding effect of the electronic package.

Abstract: Trenches in which to form a back side isolation structure for an array of CMOS image sensors are formed by a cyclic process that allows the trenches to be kept narrow. Each cycle of the process includes etching to add a depth segment to the trenches and coating the depth segment with an etch-resistant coating. The following etch step will break through the etch-resistant coating at the bottom of the trench but the etch-resistant coating will remain in the upper part of the trench to limit lateral etching and substrate damage. The resulting trenches have a series of vertically spaced nodes. The process may result in a 10% increase in photodiode area and a 30-40% increase in full well capacity.

Abstract: Semiconductor devices having increased capacitance without increased fin height or increased chip area are disclosed. Grooves are formed across a width of the fin(s) to increase the overlapping surface area with the gate terminal, in particular with a length of the groove being less than or equal to the fin width. Methods of forming such grooved fins and semiconductor capacitor devices are also described.

Abstract: A sensor includes a housing having a accommodating room, a flexible plate provided in the accommodating room and moveable to induce a medium pressure change in the accommodating room, and a pressure sensing component for sensing the pressure change. The pressure sensing component and the flexible plate are assembled and moveable together. In the sensor of the present invention, after an external signal to be sensed is transmitted to the sensor, the flexible plate moves to induce air disturbances, and then the pressure sensing component receives a pressure change induced by the air disturbances and performs signal sensing. Compared with the conventional sound sensor, the sensor of the present invention provides no opening communicating with the external environment. Therefore, the impact of foreign objects, noise and other environmental factors on the sensor can be avoided, and the signal generated by the object not to be sensed can be effectively reduced.

Abstract: Semiconductor devices having increased capacitance without increased fin height or increased chip area are disclosed. Grooves are formed across a width of the fin(s) to increase the overlapping surface area with the gate terminal, in particular with a length of the groove being less than or equal to the fin width. Methods of forming such grooved fins and semiconductor capacitor devices are also described.

Abstract: A treatment method of wastewater containing high-concentration boron includes steps as follows: pouring wastewater containing high-concentration boron into a PH value adjusting tank; pouring an alkaline solution into the PH value adjusting tank; pouring the wastewater containing boron into a boron-removing electrocoagulation tank, and an electric conducting electrolyte being provided for performing an electrocoagulation procedure; discharging sludge generated by the electrocoagulation procedure into a boron-contained sludge dewatering tank; outputting the wastewater containing boron into a first absorbing tank provided with a first absorbing material to perform an absorbing and filtering procedure; outputting the wastewater containing boron into a second absorbing tank provided with a second absorbing material to perform another absorbing and filtering procedure; and outputting the wastewater containing boron into a filtering tank to perform another filtering procedure for outputting the wastewater containing

Abstract: A sensor includes a housing having a accommodating room, a flexible plate provided in the accommodating room and moveable to induce a medium pressure change in the accommodating room, and a pressure sensing component for sensing the pressure change. The pressure sensing component and the flexible plate are assembled and moveable together. In the sensor of the present invention, after an external signal to be sensed is transmitted to the sensor, the flexible plate moves to induce air disturbances, and then the pressure sensing component receives a pressure change induced by the air disturbances and performs signal sensing. Compared with the conventional sound sensor, the sensor of the present invention provides no opening communicating with the external environment. Therefore, the impact of foreign objects, noise and other environmental factors on the sensor can be avoided, and the signal generated by the object not to be sensed can be effectively reduced.

Abstract: An identity verification method applied in a computer device includes periodically collecting biometric data of a user. A difference between the collected biometric data and pre-stored biometric data is determined. The pre-stored biometric data is updated to be the collected biometric data, and the collected biometric data and identification information of the user are uploaded to a blockchain when the difference is greater than a preset threshold. Once current biometric data of the user is obtained, and the identification information of the user from the blockchain based on the current biometric data of the user is downloaded, identity verification is performed on the user based on the downloaded identification information.

Abstract: An automatic guided vehicle positioning system includes one or more positioning areas and an automatic guided vehicle. The positioning areas each have a positioning pattern. The automatic guided vehicle includes a beam emitter, a beam receiver, and a processor. The beam emitter is configured to emit a light beam to scan the positioning areas. The beam receiver is configured to be spaced apart from the beam emitter by a specific distance, wherein the beam receiver receives the light beam scattered by an area other than the corresponding positioning pattern of the positioning areas and does not receive the light beam retroreflected by the corresponding positioning pattern. The processor is configured to recognize the corresponding positioning pattern based on the light beam received by the beam receiver and the retroreflected light beam not received by the beam receiver and to position the automatic guided vehicle.

Abstract: An oxygen sensing device with capability of storing energy and releasing energy including an oxygen sensing unit, a gas storing unit, and a control unit. The oxygen sensing unit includes a solid oxide electrolyte disposed between two conductive catalyst layers. The control unit includes a power source, a voltmeter, and a power output circuit. The power source provides electrical power to these conductive catalyst layers of the oxygen sensing unit to process a catalytic reaction and generate hydrocarbons for being stored in the gas storing unit. The voltmeter senses a voltage generated by the oxygen sensing unit when the oxygen sensing unit senses oxygen. The oxygen sensing unit makes the hydrocarbons stored in the gas storing unit and oxygen process a chemical reaction for generating electrical power to the power output circuit. The oxygen sensing unit uses the power source to generate hydrogen or syngas.

Abstract: An underwater communication apparatus includes a light transmitting device to transmits a first communication light and a light receiving device to receive a second communication light. Further, a light identification device is used to detect a reference pattern in two dimensions, which is set on a node communication apparatus, to obtain a detection pattern. The light transmitting device and the light receiving device respectively corresponding to the light identification device are set at two relative locations. A power apparatus is used to drive the underwater communication apparatus. A control/monitor apparatus obtains the detection pattern from the light identification device and analyze a difference state between the reference pattern and the detection pattern. According to the difference state, it controls the power apparatus to move the underwater communication apparatus to a location for the detection pattern and the reference pattern being two dimensionally aligned.

Abstract: A clock synchronization method, a mobile network system, a network controller and a network switch are provided. The method computes a round-trip delay ratio between the network controller and the network switch according to a first delay, of which the network controller transmits a packet to the network switch, and a second delay, of which the network switch transmits another packet to the network controller. The method also locks a first clock based on a time-transfer protocol with the round-trip delay ratio, wherein the first clock is synchronized with a master clock of the network controller. The method further sets the first clock being locked as a runtime clock of the network switch.

Abstract: A substrate having a metallized surface is provided. The substrate includes a substrate having a silanated surface, an adhesive layer disposed on the silanated surface, and a first metallic layer bonded to the silanated surface through the adhesive layer. The adhesive layer is formed with a plurality of colloidal nanoparticle groups, and the colloidal nanoparticle group may include metallic nanoparticles capped with polymer. The first metallic layer and the adhesive layer have chemical bonds formed there between. The substrate may further include a second metallic layer which is electro-plated onto the first metallic layer. A method for metallizing a surface of a substrate is also provided.