Abstract: A semiconductor device including fin field-effect transistors, includes a first gate structure extending in a first direction, a second gate structure extending the first direction and aligned with the first gate structure in the first direction, a third gate structure extending in the first direction and arranged in parallel with the first gate structure in a second direction crossing the first direction, a fourth gate structure extending the first direction, aligned with the third gate structure and arranged in parallel with the second gate structure, an interlayer dielectric layer disposed between the first to fourth gate electrodes, and a separation wall made of different material than the interlayer dielectric layer and disposed between the first and third gate structures and the second and fourth gate structures.

Abstract: A package assembly and a manufacturing method thereof are provided. The package assembly includes a photonic integrated circuit component, an electric integrated circuit component, a lens and an optical signal port. The photonic integrated circuit component comprises an optical input/output portion configured to transmit and receive optical signal. The electric integrated circuit component is electrically connected to the photonic integrated circuit component. The lens is disposed on a sidewall of the photonic integrated circuit component. The optical signal port is optically coupled to the optical input/output portion.

Abstract: A 3D memory including a plurality of tiles, a bit line transistor structure, a first upper conductive layer, and a second upper conductive layer. The bit line transistor structure is disposed between a first sub-tile and a second sub-tile in the plurality of tiles. The first upper conductive layer includes a plurality of local bit lines, a plurality of local source lines and a conductive pattern. The plurality of local bit lines include a first group and a second group of local bit lines separated from each other, wherein two adjacent local bit lines are disposed between adjacent two local source lines. The second upper conductive layer includes a global bit line. The global bit line is electrically connected to the local bit lines through the conductive pattern. The 3D memory could be a 3D AND flash memory with high capacity and high performance.

Abstract: A pixel array that includes some pixels with high absorption (HA) structures and other pixels without HA structures exhibits increased dynamic range for near infrared (NIR) light. Additionally, the pixel array is a uniform array of photodiodes and thus does not exhibit current leakage that would have been caused by irregular isolation structures. Additionally, the pixel array may further a lateral overflow integration capacitor to further increase the dynamic range for NIR light.

Abstract: The present disclosure relates to an electronic device that includes a first electronic component, a second electronic component, an interconnection structure below the first electronic component and the second electronic component and electrically connecting the first electronic component to the second electronic component, and a first waveguide below the first electronic component and the second electronic component and configured to transmit electromagnetic waves.

Abstract: Some embodiments relate to an integrated circuit (IC) device including a substrate having first photodetector groups respectively associated with a plurality of color pixels and second photodetector groups respectively associated with a plurality of phase detection pixels. Each of the first and second photodetector groups includes one or more photodetectors. The device further includes a grid structure over the substrate, color filters over the substrate, and a crosstalk reduction structure. The grid structure includes light shields, each configured to redirect light away from a corresponding one of the second photodetector groups. Each color filter vertically spans the grid structure at a corresponding one of the first photodetector groups. The crosstalk reduction structure is level with the color filters and limits an amount of the light redirected by the light shield of each of the phase detection pixels to the first photodetector group of a neighboring one of the color pixels.

Abstract: A setup method of a display device includes the following steps. A remote control device transmits a setting command to a smart device through a transmission interface. The smart device converts the setting command into a display setting command. The smart device transmits the display setting command to the display device, in which a first connector of the smart device is physically connected to a second connector of the display device. The display device correspondingly performs a firmware update operation or correspondingly adjusts at least one parameter of the display device according to the display setting command.

Abstract: An over-current protection device includes an electrode layer and a heat-sensitive layer. The heat-sensitive layer includes a polymer matrix and a conductive filler. The polymer matrix includes a polyolefin-based polymer and an olefin-acrylate copolymer. The polyolefin-based polymer is represented by a formula (I): ?wherein R1 and R2 are selected from the group consisting of CH3, C2H5, and C3H7. The olefin-acrylate copolymer is represented by a formula (II): ?wherein R is selected from the group consisting of COOCH3, COOC2H5, and COOC4H9.

Abstract: In one instance, disclosed herein is a computer-implemented method for monitoring an undercarriage of a track-type machine, the computer-implemented method comprising: accessing a reduced order model (ROM) corresponding to the track-type machine; receiving an estimated wear level of at least one undercarriage component of a track-type machine and machine signal data generated by the track-type machine; generating an updated estimated wear level of the at least one undercarriage component using the estimated wear level, the machine signal data, and the ROM; and comparing the updated estimated wear level of the at least one undercarriage component to a wear level threshold.

Abstract: An interconnect structure for insertion loss reduction in signal transmission and a method thereof are disclosed. In an embodiment, an interconnect is formed on a substrate by chemical etching process, and when the interconnect is protected by photoresist in chemical etching process, the etching direction of etching solution is not oriented, so undercut areas are respectively formed on both sides of a bottom of the interconnect at contact of the interconnect and the substrate because of etching solution residue after the etching process. An included angle formed in the undercut area between the interconnect and the substrate is defined as an etch angle, and a length of the portion, exposing in the undercut area, of the substrate is defined as an etch length. Controlling sizes of the etch angle and the etch length can reduce an insertion loss in signal transmission.

Abstract: An image sensor includes photosensitive areas in a first array within a semiconductor substrate. Microlens are disposed over the semiconductor substrate in a second array. Metal shields are disposed between a subset of the microlenses and corresponding photosensitive areas. The metal half-shields have dimensions and positions that provide half-shielding that enables half-shield phase detection autofocus. An antireflective coating is disposed over the metal half-shields. The metal half-shields and the antireflective coating may be in a composite grid that provides lateral separation between color filters. Alternatively, metal half-shields and the antireflective coating may be in below a layer that includes color filters. The antireflective coating includes a quarter-wave layer.

Abstract: A two-stage speed controller includes a main body including a first port and a second port in communication with each other, and a primary channel and a secondary channel for fluid to flow therethrough. The secondary channel allows flowing in a single direction to a pressure accumulation chamber. A sliding-axle seat is arranged in the second port. An end of a sliding axle assembly forms, together with the sliding-axle seat, a valve. The pressure accumulation chamber is connected with a primary throttle channel. The sliding axle assembly is formed, in a transverse direction, with a secondary throttle channel. During ingress and discharging of the fluid, all the channels and movement of the valve together allow for control of the pressure of the fluid according to a magnitude of a spring force of a regulation assembly in order to control a moving speed of a cylinder connected to the main body.

Abstract: The present disclosure describes a semiconductor device having a source/drain dielectric. The semiconductor device includes a channel structure on a substrate, a dielectric structure on the substrate and adjacent to the channel structure, and an epitaxial structure on a top surface of the dielectric structure. The epitaxial structure is in contact with the channel structure.

Abstract: An optical imaging lens assembly includes nine lens elements which are, in order from an object side to an image side: a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element, a sixth lens element, a seventh lens element, an eighth lens element and a ninth lens element. The first lens element has negative refractive power. The second lens element with negative refractive power has an object-side surface being convex and an image-side surface being concave in a paraxial region thereof. The fourth lens element has an image-side surface being convex in a paraxial region thereof. The fifth lens element has positive refractive power. The sixth lens element has an image-side surface being concave in a paraxial region thereof. The eighth lens element with negative refractive power has an object-side surface being concave in a paraxial region thereof.

Abstract: A two-stage speed controller includes a main body including a first port and a second port in communication with each other, and a primary channel and a secondary channel for fluid to flow therethrough. The secondary channel allows flowing in a single direction to a pressure accumulation chamber. A sliding-axle seat is arranged in the second port. An end of a sliding axle assembly forms, together with the sliding-axle seat, a valve. The pressure accumulation chamber is connected with a primary throttle channel. The sliding axle assembly is formed, in a transverse direction, with a secondary throttle channel. During ingress and discharging of the fluid, all the channels and movement of the valve together allow for control of the pressure of the fluid according to a magnitude of a spring force of a regulation assembly in order to control a moving speed of a cylinder connected to the main body.

Abstract: In some embodiments, the present disclosure relates to an integrated chip structure. The integrated chip structure includes forming a first image sensor element within a first substrate and a second image sensor element within a second substrate. The first image sensor element is configured to generate electrical signals from electromagnetic radiation within a first range of wavelengths and the second image sensor element is configured to generate electrical signals from electromagnetic radiation within a second range of wavelengths. A plurality of deposition processes are performed to form a band-pass filter over the second substrate. The band-pass filter has a plurality of alternating layers of a first material having a first refractive index and a second material having a second refractive index that is less than the first refractive index. The first substrate is bonded to the band-pass filter.

Abstract: In some embodiments, an image sensor is provided. The image sensor includes a photodetector disposed in a semiconductor substrate. A wave guide filter having a substantially planar upper surface is disposed over the photodetector. The wave guide filter includes a light filter disposed in a light filter grid structure. The light filter includes a first material that is translucent and has a first refractive index. The light filter grid structure includes a second material that is translucent and has a second refractive index less than the first refractive index.

Abstract: Disclosure is a compound with one or more arm(s) for drug conjugation and a conjugate including the compound so as to provide high drug-to-moiety ratio and conjugate more drugs to the conjugate.