Abstract: A burr trimming device includes a removing assembly and a directed spraying assembly disposed on a carrier, wherein the directed spraying assembly has a nozzle facing the removing assembly. The directed spraying assembly rapidly freezes objects such as burrs and then the removing assembly removes the hardened objects by coming into rigid contact therewith, thereby ensuring complete removal of the fine flexible burrs.

Abstract: A burr trimming device includes a removing assembly and a directed spraying assembly disposed on a carrier, wherein the directed spraying assembly has a nozzle facing the removing assembly. The directed spraying assembly rapidly freezes objects such as burrs and then the removing assembly removes the hardened objects by coming into rigid contact therewith, thereby ensuring complete removal of the fine flexible burrs.

Abstract: A transmission device is provided, including a first housing, a second housing connected to the first housing, a third housing axially connected to the second housing, an adapter disposed on the third housing, a first power shaft actuating the first housing and the second housing to rotate, a second power shaft actuating the third housing to rotate, and a third power shaft actuating the adapter to rotate. The second and third power shafts are a coaxial structure. The first power shaft is an independent rod. Therefore, a motor loaded with a smaller rotation inertia and being thus cheaper can be used to drive the first power shaft, and the transmission device can have a reduced cost.

Abstract: A load balancing device for a robot arm including a pneumatic cylinder and a piston rod is provided. The pneumatic cylinder, used to store a gas, includes a first chamber, a second chamber and a communicating passage, wherein the communicating passage connects the first chamber and the second chamber. The piston rod has one end connected to the robot arm and the other end slidably disposed in the pneumatic cylinder. The piston rod adjusts the volume and the pressure of the gas in the first chamber and the second chamber according to a load, wherein the first chamber and the second chamber are coaxially disposed in the axial direction of the pneumatic cylinder.

Abstract: Disclosed is an ordered microelectronic fabrication sequence in which color filters are formed by conformal deposition directly onto a photodetector array of a CCD, CID, or CMOS imaging device to create a concave-up pixel surface, and, overlayed with a high transmittance planarizing film of specified index of refraction and physical properties which optimize light collection to the photodiode without additional conventional microlenses. The optically flat top surface serves to encapsulate and protect the imager from chemical and thermal cleaning treatment damage, minimizes topographical underlayer variations which would aberrate or cause reflection losses of images formed on non-planar surfaces, and, obviates residual particle inclusions induced during dicing and packaging. A CCD imager is formed by photolithographically patterning a planar-array of photodiodes on a semiconductor substrate. The photodiode array is provided with metal photoshields, passivated, and, color filters are formed thereon.

Abstract: Disclosed is an ordered microelectronic fabrication sequence in which color filters are formed by conformal deposition directly onto a photodetector array of a CCD, CID, or CMOS imaging device to create a concave-up pixel surface, and, overlayed with a high transmittance planarizing film of specified index of refraction and physical properties which optimize light collection to the photodiode without additional conventional microlenses. The optically flat top surface serves to encapsulate and protect the imager from chemical and thermal cleaning treatment damage, minimizes topographical underlayer variations which would aberrate or cause reflection losses of images formed on non-planar surfaces, and, obviates residual particle inclusions induced during dicing and packaging. A CCD imager is formed by photolithographically patterning a planar-array of photodiodes on a semiconductor substrate. The photodiode array is provided with metal photoshields, passivated, and, color filters are formed thereon.

Abstract: Disclosed is an ordered microelectronic fabrication sequence in which color filters are formed by conformal deposition directly onto a photodetector array of a CCD, CID, or CMOS imaging device to create a concave-up pixel surface, and, overlayed with a high transmittance planarizing film of specified index of refraction and physical properties which optimize light collection to the photodiode without additional conventional microlenses. The optically flat top surface serves to encapsulate and protect the imager from chemical and thermal cleaning treatment damage, minimizes topographical underlayer variations which would aberrate or cause reflection losses of images formed on non-planar surfaces, and, obviates residual particle inclusions induced during dicing and packaging. A CCD imager is formed by photolithographically patterning a planar-array of photodiodes on a semiconductor substrate. The photodiode array is provided with metal photoshields, passivated, and, color filters are formed thereon.

Abstract: Disclosed is an ordered microelectronic fabrication sequence in which color filters are formed by conformal deposition directly onto a photodetector array of a CCD, CID, or CMOS imaging device to create a concave-up pixel surface, and, overlayed with a high transmittance planarizing film of specified index of refraction and physical properties which optimize light collection to the photodiode without additional conventional microlenses. The optically flat top surface serves to encapsulate and protect the imager from chemical and thermal cleaning treatment damage, minimizes topographical underlayer variations which would aberrate or cause reflection losses of images formed on non-planar surfaces, and, obviates residual particle inclusions induced during dicing and packaging. A CCD imager is formed by photolithographically patterning a planar-array of photodiodes on a semiconductor substrate. The photodiode array is provided with metal photoshields, passivated, and, color filters are formed thereon.

Abstract: The disclosure relates to a method and apparatus for preventing extrusion or spiking of a metal atom from a metallization layer to other layers of a silicon wafer. In one embodiment, the method includes forming a silicon-on-ship device with a MEMS component on the substrate. The MEMS component may include one or more metal or metallic alloys. To prevent spiking from the MEMS component, the sides thereof can be coated with one ore more spacer or barrier layers. In one embodiment, oxygen plasma and thermal oxidation methods are used to deposit spacers. In another embodiment, an oxide layer is deposited over the wafer, covering the substrate and the MEMS component. Selective etching or anisotropic etching can be used to remove the oxide layer from certain regions of the MEMS and the substrate while covering the sidewalls. An amorphous silicon layer can then be deposited to cover the MEMS device.

Abstract: A new method and processing sequence is provided for the formation of solder bumps that are in contact with underlying aluminum contact pads. A patterned layer of negative photoresist is interposed between a patterned layer of PE Si3N4 and a patterned layer of polyamide insulator. The patterned negative photoresist partially overlays the aluminum contact pad and prevents contact between the layer of polyamide insulator and the aluminum contact pad. By forming this barrier no moisture that is contained in the polyamide insulator can come in contact with the aluminum contact pad, therefore no corrosion in the surface of the aluminum contact pad can occur.

Abstract: A new process is provided which is an extension and improvement of present processing for the creation of a solder bump. After the layers of Under Bump Metal and a layer of solder metal have been created in patterned and etched format and overlying the contact pad, following a conventional processing sequence, a layer of polyimide is deposited. The solder flow is performed using the thickness of the deposited layer of polyimide to control the height of the column underneath the reflown solder.

Abstract: A new method and processing sequence is provided for the creation of interconnect bumps. A layer of passivation is deposited over a contact pad and patterned, creating an opening in the layer of passivation that aligns with the contact pad. A layer of UBM metal is deposited over the layer of passivation, the layer of UBM is overlying the contact pad and limited to the immediate surroundings of the contact pad. The central surface of the layer of UBM is selectively electroplated after which a layer of solder or solder alloy is solder printed over the electroplated surface of the layer of UBM. A solder flux or paste is applied over the surface of the solder printed solder compound or solder alloy. Flowing of the solder or solder alloy creates the solder bump of the invention.

Abstract: Disclosed is an ordered microelectronic fabrication sequence in which color filters are formed by conformal deposition directly onto a photodetector array of a CCD, CID, or CMOS imaging device to create a concave-up pixel surface, and, overlayed with a high transmittance planarizing film of specified index of refraction and physical properties which optimize light collection to the photodiode without additional conventional microlenses. The optically flat top surface serves to encapsulate and protect the imager from chemical and thermal cleaning treatment damage, minimizes topographical underlayer variations which would aberrate or cause reflection losses of images formed on non-planar surfaces, and, obviates residual particle inclusions induced during dicing and packaging. A CCD imager is formed by photolithographically patterning a planar-array of photodiodes on a semiconductor substrate. The photodiode array is provided with metal photoshields, passivated, and, color filters are formed thereon.

Abstract: Disclosed is an ordered microelectronic fabrication sequence in which color filters are formed by conformal deposition directly onto a photodetector array of a CCD, CID, or CMOS imaging device to create a concave-up pixel surface, and, overlayed with a high transmittance planarizing film of specified index of refraction and physical properties which optimize light collection to the photodiode without additional conventional microlenses. The optically flat top surface serves to encapsulate and protect the imager from chemical and thermal cleaning treatment damage, minimizes topographical underlayer variations which would aberrate or cause reflection losses of images formed on non-planar surfaces, and, obviates residual particle inclusions induced during dicing and packaging. A CCD imager is formed by photolithographically patterning a planar-array of photodiodes on a semiconductor substrate. The photodiode array is provided with metal photoshields, passivated, and, color filters are formed thereon.

Abstract: Within a method for fabricating a microelectronic, and a microelectronic fabrication fabricated in accord with the method, there is formed upon a bond pad formed over a substrate a conductor passivation layer. Within the method and the microelectronic fabrication, the bond pad is formed from a conductor material selected from the group consisting of aluminum and aluminum alloy conductor materials, and the conductor passivation layer is formed from a noble metal conductor material. The invention provides particular value for fabricating color filter sensor image array optoelectronic microelectronic fabrications with attenuated bond pad corrosion.

Abstract: A method of forming reflowed bumps comprising the following sequential steps. A wafer is provided. A series of spaced initial bumps is formed upon the wafer. The initial bumps having exposed side walls and top surfaces and organic residue over the initial bump side walls and/or the initial bump top surfaces. The organic residue is simultaneously removed from the initial bump side walls and top surfaces with the forming a surface oxide layer over the initial bump side walls and top surfaces. The surface oxide layer is stripped from the initial bump top surfaces and an upper portion of the initial bump side walls to form partially exposed bumps. The partially exposed bumps are heat treated to melt the partially exposed bumps to form the reflowed bumps.

Abstract: A new process is provided which is an extension and improvement of present processing for the creation of a solder bump. After the layers of Under Bump Metal and a layer of solder metal have been created in patterned and etched format and overlying the contact pad, following a conventional processing sequence, a layer of polyimide is deposited. The solder flow is performed using the thickness of the deposited layer of polyimide to control the height of the column underneath the reflown solder.

Abstract: A method of forming a bump structure, comprising the following steps. A structure having an exposed first conductive structure is provided. A first photoresist layer is formed over the structure and the exposed first conductive structure. A second capping photoresist layer is formed over the first photoresist layer. The first and second photoresist layers being comprised of different photoresist materials. The first and second photoresist layers are patterned to form an opening through the first and second photoresist layers and over the first conductive structure. The second capping photoresist layer prevents excessive formation of first photoresist layer residue during processing. A second conductive structure is formed within the opening. The first and second patterned photoresist layers are stripped. The second conductive structure is reflowed to form the bump structure.

Abstract: A new method and processing sequence is provided for the formation of solder bumps that are in contact with underlying aluminum contact pads. A patterned layer of negative photoresist is interposed between a patterned layer of PE Si3N4 and a patterned layer of polyamide insulator. The patterned negative photoresist partially overlays the aluminum contact pad and prevents contact between the layer of polyamide insulator and the aluminum contact pad. By forming this barrier no moisture that is contained in the polyamide insulator can come in contact with the aluminum contact pad, therefore no corrosion in the surface of the aluminum contact pad can occur.

Abstract: A new method to form color image sensor cells without damaging bonding pads in the manufacture of an integrated circuit device is achieved. The method comprises, first, forming cell electrodes and bonding pads on a semiconductor substrate. A passivation layer is formed overlying the cell electrodes but exposing the top surface of the bonding pads. The semiconductor substrate is then dipped in a hydrogen peroxide solution to thereby form a metal oxide layer overlying the bonding pads. A first transparent planarization layer is deposited overlying the passivation layer and the metal oxide layer. A color filter photoresist layer is deposited overlying the first transparent planarization layer. The color filter photoresist layer is patterned to form color filter elements to complete the color image sensor cells in the manufacture of the integrated circuit device. The presence of the metal oxide layer prevents damage to the bonding pads from an alkaline developer.