Abstract: A semiconductor structure includes a source/drain (S/D) region, one or more dielectric layers over the S/D region, one or more semiconductor channel layers connected to the S/D region, an isolation structure under the S/D region and the one or more semiconductor channel layers, and a via under the S/D region and electrically connected to the S/D region. A lower portion of the via is surrounded by the isolation structure and an upper portion of the via extends vertically between the S/D region and the isolation structure.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a stack of semiconductor nanostructures over a base structure and a first epitaxial structure and a second epitaxial structure sandwiching the semiconductor nanostructures. The semiconductor device structure also includes a gate stack wrapped around each of the semiconductor nanostructures and a backside conductive contact connected to the second epitaxial structure. A first portion of the backside conductive contact is directly below the base structure, and a second portion of the backside conductive contact extends upwards to approach a bottom surface of the second epitaxial structure. The semiconductor device structure further includes an insulating spacer between a sidewall of the base structure and the backside conductive contact.

Abstract: A semiconductor structure includes an isolation structure, a source/drain region over the isolation structure, a gate structure over the isolation structure and adjacent to the source/drain region, an interconnect layer over the source/drain region and the gate structure, an isolating layer below the gate structure, and a contact structure under the source/drain region. The contact structure has a first portion and a second portion. The first portion is below the second portion. The second portion extends through the isolating layer and protrudes above the isolating layer. A portion of the isolating layer is vertically between the gate structure and the first portion of the contact structure.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate and a via structure. The via structure is through the substrate. The via structure includes a first conductive portion, a second conductive portion, a first barrier portion, a second barrier portion, and a third barrier portion. The first conductive portion has a ring-shaped cross section. The second conductive portion is disposed at an inner side of the first conductive portion. The second conductive portion has a ring-shaped cross section. The first barrier portion is disposed at an outer side of the first conductive portion. The second barrier portion is disposed between the first conductive portion and the second conductive portion. The third barrier portion is disposed at an inner side of the second conductive portion. At least one of the first barrier portion, the second barrier portion, or the third barrier portion includes an insulating 2D material.

Abstract: An integrated circuit includes a substrate at a front side of the integrated circuit. A first gate all around transistor is disposed on the substrate. The first gate all around transistor includes a channel region including at least one semiconductor nanostructure, source/drain regions arranged at opposite sides of the channel region, and a gate electrode. A shallow trench isolation region extends into the integrated circuit from the backside. A backside gate plug extends into the integrated circuit from the backside and contacts the gate electrode of the first gate all around transistor. The backside gate plug laterally contacts the shallow trench isolation region at the backside of the integrated circuit.

Abstract: A semiconductor structure has a frontside and a backside. The semiconductor structure includes an isolation structure at the backside; one or more transistors at the frontside, wherein the one or more transistors have source/drain epitaxial features; two metal plugs through the isolation structure and contacting two of the source/drain electrodes from the backside; and a dielectric liner filling a space between the two metal plugs, wherein the dielectric liner partially or fully surrounds an air gap between the two metal plugs.

Abstract: A package structure and a method for forming the same are provided. The package structure includes a first package structure and a second package structure. The first package structure includes a first device formed over a first substrate. The first device includes a first conductive plug connected to a through substrate via (TSV) structure formed in the first substrate. A buffer layer surrounds the first substrate. A first bonding layer is formed over the first substrate and the buffer layer. The second package structure includes a second device formed over a second substrate. A second bonding layer is formed over the second device. A hybrid bonding structure is between the first package structure and the second package structure by bonding the first bonding layer to the second bonding layer.

Abstract: An integrated circuit includes a substrate at a front side of the integrated circuit. A first gate all around transistor is disposed on the substrate. The first gate all around transistor includes a channel region including at least one semiconductor nanostructure, source/drain regions arranged at opposite sides of the channel region, and a gate electrode. A shallow trench isolation region extends into the integrated circuit from the backside. A backside gate plug extends into the integrated circuit from the backside and contacts the gate electrode of the first gate all around transistor. The backside gate plug laterally contacts the shallow trench isolation region at the backside of the integrated circuit.

Abstract: A semiconductor device includes a substrate having fins and trenches in between the fins, a plurality of insulators, a first metal layer, an insulating layer, a second metal layer and an interlayer dielectric. The insulators are disposed within the trenches of the substrate. The first metal layer is disposed on the plurality of insulators and across the fins. The insulating layer is disposed on the first metal layer over the plurality of insulators and across the fins. The second metal layer is disposed on the insulating layer over the plurality of insulators and across the fins. The interlayer dielectric is disposed on the insulators and covering the first metal layer, the insulating layer and the second metal layer.

Abstract: A chip package structure includes a substrate, a chip, a light-permeable element, and an adhesive element. The chip is disposed on the substrate. The light-permeable element is disposed above the chip. The adhesive element is connected between the chip and the light-permeable element. The adhesive element surrounds the chip for formation of an accommodating space, and the chip is located in the accommodating space. The adhesive element includes two material layers having complementary visible light absorption spectra, such that the adhesive element is capable of being used to absorb full visible spectrum light.

Abstract: A method includes forming image sensors in a semiconductor substrate, thinning the semiconductor substrate from a backside of the semiconductor substrate, forming a dielectric layer on the backside of the semiconductor substrate, and forming a polymer grid on the backside of the semiconductor substrate. The polymer grid has a first refractivity value. The method further includes forming color filters in the polymer grid, wherein the color filters has a second refractivity value higher than the first refractivity value, and forming micro-lenses on the color filters.

Abstract: A method includes forming image sensors in a semiconductor substrate, thinning the semiconductor substrate from a backside of the semiconductor substrate, forming a dielectric layer on the backside of the semiconductor substrate, and forming a polymer grid on the backside of the semiconductor substrate. The polymer grid has a first refractivity value. The method further includes forming color filters in the polymer grid, wherein the color filters has a second refractivity value higher than the first refractivity value, and forming micro-lenses on the color filters.

Abstract: A method includes forming image sensors in a semiconductor substrate, thinning the semiconductor substrate from a backside of the semiconductor substrate, forming a dielectric layer on the backside of the semiconductor substrate, and forming a polymer grid on the backside of the semiconductor substrate. The polymer grid has a first refractivity value. The method further includes forming color filters in the polymer grid, wherein the color filters has a second refractivity value higher than the first refractivity value, and forming micro-lenses on the color filters.

Abstract: An avatar-based charting method for assisted diagnosis to improve the efficiency of medical practice. Through an anthropomorphic symptom record interface, the first page is the Genetic-Psycho-Social-Bio (GPSB) which assists in understanding the genetic, psychological, social-environmental, and biological characteristics of patients. A Subjective-Objective-Assessment-Plan (SOAP) diagnosis page aids in doctor diagnosis. A decision support diagnostic summary interface automatically generates the diagnosis summary and notifies of any unusual circumstances. Finally, a medical records module saves all information into a medical database in order to provide health care for subsequent tracking and evaluation.

Abstract: A buffer cache device used to get at least one data from at least one application is provided, wherein the buffer cache device includes a first-level cache memory, a second-level cache memory and a controller. The first-level cache memory is used to receive and store the data. The second-level cache memory has a memory cell architecture different from that of the first-level cache memory. The controller is used to write the data stored in the first-level cache memory into the second-level cache memory.

Abstract: A method for managing block erase operations is provided for an array of memory cells including erasable blocks of memory cells in the array. The method comprises maintaining status data for a plurality of sub-blocks of the erasable blocks of the array. The status data indicate whether the sub-blocks are currently accessible and whether the sub-blocks are invalid. The method comprises, in response to a request to erase a selected sub-block of a particular erasable block, issuing an erase command to erase the particular block if the other sub-blocks of the particular erasable block are invalid, else updating the status data to indicate that the selected sub-block is invalid.

Abstract: A method is provided for managing a file system including data objects. The data objects, indirect pointers and source pointers are stored in containers that have addresses and include addressable units of a memory. The objects are mapped to addresses for corresponding containers. The indirect pointer in a particular container points to the address of a container in which the corresponding object is stored. The source pointer in the particular container points to the address of the container to which the object in the particular container is mapped. An object in a first container is moved to a second container. The source pointer in the first container is used to find a third container to which the object is mapped. The indirect pointer in the third container is updated to point to the second container. The source pointer in the second container is updated to point to the third container.

Abstract: There is provided a physiological measurement device including a light source, an image sensor and a processor. The light source illuminates a skin surface with a first brightness value and a second brightness value. The image sensor receives scattered light from tissues below the skin surface, and outputs a first image frame corresponding to the first brightness value and a second image frame corresponding to the second brightness value. The processor calculates an intensity comparison index between the first image frame and the second image frame, calculates perfusion data according to the first image frame and/or the second image frame, and identifies a contact status according to the intensity comparison index.

Abstract: A method for managing utilization of a memory including a physical address space comprises mapping logical addresses of data objects to locations within the physical address space, and defining a plurality of address segments in the space as an active window. The method comprises allowing writes of data objects having logical addresses mapped to locations within the plurality of address segments in the active window. The method comprises, upon detection of a request to write a data object having a logical address mapped to a location outside the active window, updating the mapping so that the logical address maps to a selected location within the active window, and then allowing the write to the selected location. The method comprises maintaining access data indicating utilization of the plurality of address segments in the active window, and adding and removing address segments from the active window in response to the access data.

Abstract: There is provided a physiological measurement device including a light source, an image sensor and a processor. The light source illuminates a skin surface with a first brightness value and a second brightness value. The image sensor receives scattered light from tissues below the skin surface, and outputs a first image frame corresponding to the first brightness value and a second image frame corresponding to the second brightness value. The processor calculates an intensity comparison index between the first image frame and the second image frame, calculates perfusion data according to the first image frame and/or the second image frame, and identifies a contact status according to the intensity comparison index.