Abstract: A liquid crystal writing screen, including: first substrate and second substrates, and a bistable liquid crystal layer between the first and second substrates, where the first substrate includes: a first base substrate; a plurality of pixel units on a side of the first base substrate proximate to the second substrate, each pixel unit including a thin film transistor, and a pixel electrode electrically connected to a first electrode of the thin film transistor; a passivation layer on a side of the thin film transistor distal from the first base substrate and in contact with the thin film transistor; where the pixel electrode is between the first base substrate and the passivation layer; and a spacer on a side of the passivation layer distal from the first base substrate and in contact with the passivation layer. A method for preparing the liquid crystal writing screen is further provided.

Abstract: A display substrate, a manufacturing method thereof and a display apparatus are provided. The display substrate includes: a base substrate; a sealant on the base substrate; and a contact layer between the base substrate and the sealant, the contact layer being in contact with the sealant. In the display substrate, a contact layer surface of the contact layer, which is away from the base substrate, is not flat at a contact position where the contact layer is in contact with the sealant.

Abstract: A display substrate, a manufacturing method thereof and a display apparatus are provided. The display substrate includes: a base substrate; a sealant on the base substrate; and a contact layer between the base substrate and the sealant, the contact layer being in contact with the sealant. In the display substrate, a contact layer surface of the contact layer, which is away from the base substrate, is not flat at a contact position where the contact layer is in contact with the sealant.

Abstract: The present disclosure provides a manufacturing method of a display substrate, a display substrate and a display device, belongs to the field of display technology, and can at least partially solve a problem of residual sand in the display substrate. The manufacturing method of the display substrate includes: providing a base; forming a passivation layer on a surface of the base; forming an amorphous oxide conductive material layer on a surface of the passivation layer facing away from the base; forming a photoresist pattern on the oxide conductive material layer, the photoresist pattern having an exposure region; etching a portion of the oxide conductive material layer in the exposure region of the photoresist pattern to form a hollow position exposing a portion of the passivation layer; and removing a certain thickness material of the portion of the passivation layer exposed through the hollow position.

Abstract: A display substrate, a manufacturing method thereof and a display apparatus are provided. The display substrate includes: a base substrate; a sealant on the base substrate; and a contact layer between the base substrate and the sealant, the contact layer being in contact with the sealant. In the display substrate, a contact layer surface of the contact layer, which is away from the base substrate, is not flat at a contact position where the contact layer is in contact with the sealant.

Abstract: An array substrate, a manufacturing method thereof, and a display panel are provided. The array substrate comprises a base substrate, a plurality of gate lines and gate electrodes on the base substrate, each gate electrode being corresponding to and separate from a respective gate line, a gate insulating layer over the gate electrode and the gate line, the gate insulating layer having a first via hole and a second via hole, the first via hole exposing the gate electrode, the second via hole exposing the gate line, a conductive connection layer and a polysilicon semiconductor layer on the gate insulating layer, the conductive connection layer filling the first via hole and the second via hole to connect the gate line with the gate electrode.

Abstract: A manufacturing method of an array substrate, an array substrate and a display device are disclosed. The manufacturing method of the array substrate includes: providing a base substrate (200); forming a semiconductor layer on the base substrate; depositing an etch stop layer material on the semiconductor layer; subjecting the etch stop layer material to a wet etching process to form an etch stop layer; subjecting the semiconductor layer to a dry etching process to form an active layer, wherein the active layer includes a first region and a second region surrounding the first region, an orthographic projection of the etch stop layer on the base substrate completely coincides with an orthographic projection of the first region of the active layer on the base substrate.

Abstract: An array substrate includes a base substrate and a GND trace. The GND trace is disposed along an edge of the substrate, and the GND trace includes a plurality of conductive line segments separated from each other and a connection structure disposed on a side of the GND trace away from the base substrate. The connection structure electrically connects the conductive line segments.

Abstract: A display substrate, a manufacturing method thereof and a display apparatus are provided. The display substrate includes: a base substrate; a sealant on the base substrate; and a contact layer between the base substrate and the sealant, the contact layer being in contact with the sealant. In the display substrate, a contact layer surface of the contact layer, which is away from the base substrate, is not flat at a contact position where the contact layer is in contact with the sealant.

Abstract: A display substrate, a manufacturing method thereof and a display apparatus are provided. The display substrate includes: a base substrate; a sealant on the base substrate; and a contact layer between the base substrate and the sealant, the contact layer being in contact with the sealant. In the display substrate, a contact layer surface of the contact layer, which is away from the base substrate (100A), is not flat at a contact position where the contact layer (50) is in contact with the sealant (300).

Abstract: The present disclosure relates to the field of display technologies, and discloses a Thin Film Transistor, a method for preparing the same, an array substrate, a display panel and an apparatus. The TFT includes: a base substrate; an active layer; a source electrode; and a drain electrode; where the active layer, the source electrode, and the drain electrode are sequentially laminated on the base substrate; and a projection of the source electrode on the base substrate covers a projection of part of edges of the active layer on the base substrate.

Abstract: The present disclosure provides a display substrate, a manufacturing method thereof, and a display device. The display substrate includes a base substrate and thin-film transistors disposed on the base substrate, where the thin-film transistors each comprises a gate, an active layer insulated from the gate, and two ohmic contact parts in direct contact with the active layer, leaving a gap region between the two ohmic contact parts; and each of the ohmic contact parts comprises a lightly doped region and a heavily doped region, and an orthographic projection of the lightly doped region on the base substrate and an orthographic projection of the heavily doped region on the base substrate do not overlap each other.

Abstract: The present disclosure provides a thin film transistor, including: an active layer, a source and a drain electrically coupled with the active layer, and a plurality of doped layers located between the source and the active layer and between the drain and the active layer, a resistance of one of the plurality of doped layers farthest away from the active layer is smaller than that of any other doped layer. The disclosure further provides a gate driving circuit, a display substrate and a display device. With the present disclosure, current loss of a current passing through the doped layers of the thin film transistor is reduced, on-state current of the thin film transistor is improved and a situation that output signals of the thin film transistor are insufficient is avoided.

Abstract: The present application discloses a thin film transistor having an active layer including a channel part, a source contact part, and a drain contact part. At least one of the source contact part and the drain contact part has a contacting edge having one or more irregularities along the contacting edge.

Abstract: The present application discloses a thin film transistor having an active layer including a channel part, a source contact part, and a drain contact part. At least one of the source contact part and the drain contact part has a contacting edge having one or more irregularities along the contacting edge.

Abstract: A display substrate, a manufacturing method thereof and a display apparatus are provided. The display substrate includes: a base substrate; a sealant on the base substrate; and a contact layer between the base substrate and the sealant, the contact layer being in contact with the sealant. In the display substrate, a contact layer surface of the contact layer, which is away from the base substrate (100A), is not flat at a contact position where the contact layer (50) is in contact with the sealant (300).

Abstract: A manufacturing method of an array substrate, an array substrate and a display device are disclosed. The manufacturing method of the array substrate includes: providing a base substrate (200); forming a semiconductor layer on the base substrate; depositing an etch stop layer material on the semiconductor layer; subjecting the etch stop layer material to a wet etching process to form an etch stop layer; subjecting the semiconductor layer to a dry etching process to form an active layer, wherein the active layer includes a first region and a second region surrounding the first region, an orthographic projection of the etch stop layer on the base substrate completely coincides with an orthographic projection of the first region of the active layer on the base substrate.

Abstract: The present disclosure provides a thin film transistor, including: an active layer, a source and a drain electrically coupled with the active layer, and a plurality of doped layers located between the source and the active layer and between the drain and the active layer, a resistance of one of the plurality of doped layers farthest away from the active layer is smaller than that of any other doped layer. The disclosure further provides a gate driving circuit, a display substrate and a display device. With the present disclosure, current loss of a current passing through the doped layers of the thin film transistor is reduced, on-state current of the thin film transistor is improved and a situation that output signals of the thin film transistor are insufficient is avoided.

Abstract: An array substrate includes a base substrate and a GND trace. The GND trace is disposed along an edge of the substrate, and the GND trace includes a plurality of conductive line segments separated from each other and a connection structure disposed on a side of the GND trace away from the base substrate. The connection structure electrically connects the conductive line segments.

Abstract: The present disclosure provides a manufacturing method of a display substrate, a display substrate and a display device, belongs to the field of display technology, and can at least partially solve a problem of residual sand in the display substrate. The manufacturing method of the display substrate includes: providing a base; forming a passivation layer on a surface of the base; forming an amorphous oxide conductive material layer on a surface of the passivation layer facing away from the base; forming a photoresist pattern on the oxide conductive material layer, the photoresist pattern having an exposure region; etching a portion of the oxide conductive material layer in the exposure region of the photoresist pattern to form a hollow position exposing a portion of the passivation layer; and removing a certain thickness material of the portion of the passivation layer exposed through the hollow position.