Abstract: A method for manufacturing a semiconductor device includes forming an etch-target layer over a semiconductor substrate having a lower structure, forming a first mask pattern over the etch-target layer, forming a spacer material layer with a uniform thickness over the etch-target layer including the first mask pattern, forming a second mask pattern on an indented region of the space material layer, and etching the etch-target layer with the first mask pattern and the second mask pattern as an etch mask to form a fine pattern.

Abstract: A method for manufacturing a semiconductor device includes forming a sacrificial layer for forming a lower electrode as an amorphous carbon layer in order to prevent collapsing of a cylindrical lower electrode. When an alignment process is not normally performed to arrange photoresist mask pattern for storage electrode and lower electrode contact plug due to optical absorbance of the amorphous carbon layer, a polysilicon layer is further formed over a SiON film used as a hard mask of the amorphous carbon layer, thereby reducing risk of misalignment and performing a stable process for forming a capacitor to increase yield of semiconductor devices.

Abstract: A method for forming a fine pattern of a semiconductor device includes forming a first hard mask layer over a semiconductor substrate and a second hard mask layer over the first hard mask layer, selectively etching the second hard mask layer and the first hard mask layer by using a line/space mask as an etching mask to form a second hard mask layer pattern and a first hard mask layer pattern, forming an insulating film filling the second hard mask layer pattern and the first hard mask layer pattern, selectively etching the second hard mask layer and its underlying first hard mask layer pattern by using the insulating film as an etching mask to form a fourth hard mask layer pattern overlying a third hard mask layer pattern, removing the insulating film and the fourth hard mask layer pattern, and patterning the semiconductor substrate by using the third hard mask layer pattern as an etching mask, to form a fine pattern.

Abstract: A polymer for immersion lithography comprising a repeating unit represented by Formula 1 and a photoresist composition containing the same. A photoresist film formed by the photoresist composition of the invention is highly resistant to dissolution, a photoacid generator in an aqueous solution for immersion lithography, thereby preventing contamination of an exposure lens and deformation of the photoresist pattern by exposure.

Abstract: A method for forming a fine pattern of a semiconductor device includes forming a first photoresist film pattern over a semiconductor substrate including an underlying layer, exposing the first photoresist film pattern to generate an acid from the first photoresist film pattern, bleaching the first photoresist film pattern, and forming a second photoresist film pattern between the first photoresist patterns.

Abstract: A method for forming a fine pattern of a semiconductor device comprises forming a spin-on-carbon layer over an underlying layer, forming an anti-reflection pattern including a silicon containing polymer with a first etching mask pattern, forming a photoresist pattern including a silicon containing polymer with a second etching mask pattern between elements of the first etching mask pattern, and etching the spin-on-carbon layer with the etching mask patterns to reduce the process steps and the manufacturing cost, thereby obtaining a uniform pattern profile.

Abstract: A method for forming a fine pattern of a semiconductor device comprises: forming anti-reflection coating patterns over an underlying layer of a semiconductor substrate using an anti-reflection coating composition comprising a silicon-containing polymer; forming a photoresist pattern between the anti-reflection coating patterns using a photoresist composition comprising a silicon-containing polymer; and patterning the underlying layer using the photoresist patterns as an etching mask.

Abstract: A photoresist cleaning solution and method for forming photoresist patterns using the same. More specifically, disclosed are a photoresist cleaning solution comprising H2O and an ionic surfactant represented by Formula 1, and a method for forming a photoresist pattern using the same. By spraying the cleaning solution of the present invention over photoresist film before and/or after exposing step, pattern formation in an undesired region caused by ghost images can be removed.

Abstract: A method for forming a fine pattern of a semiconductor device comprises forming a deposition pattern including first, second, and third mask patterns over a semiconductor substrate having an underlying layer, side-etching the second mask pattern with the third mask pattern as an etching barrier mask, removing the third mask pattern, forming a spin-on-carbon layer that exposes the upper portion of the second mask pattern, performing an etching process to expose the underlying layer with the spin-on-carbon layer as an etching barrier mask, and removing the spin-on-carbon layer.

Abstract: Disclosed herein is a top anti-reflective coating polymer represented by Formula 1, below: wherein R1 and R2 are independently hydrogen, fluoro, methyl or fluoromethyl; R3 is a C1-10 hydrocarbon or a C1-10 hydrocarbon in which the hydrogen atoms are partly replaced by fluorine atoms; and a, b and c, representing the mole fraction of each monomer, are in the range between 0.05 and 0.9. Because a top anti-reflective coating formed using the anti-reflective coating polymer of Formula 1 is not soluble in water, it can be applied to immersion lithography using water as a medium for a light source. In addition, because the top anti-reflective coating can reduce the reflectance from an underlying layer, the uniformity of CD is improved, thus enabling the formation of an ultra fine pattern.

Abstract: A method for forming a fine pattern of a semiconductor device includes forming a deposition film over a substrate having an underlying layer. The deposition film includes first, second, and third mask films. The method also includes forming a photoresist pattern over the third mask film, patterning the third mask film to form a deposition pattern, and forming an amorphous carbon pattern at sidewalls of the deposition pattern. The method further includes filling a spin-on-carbon layer over the deposition pattern and the amorphous carbon pattern, polishing the spin-on-carbon layer, the amorphous carbon pattern, and the photoresist pattern to expose the third mask pattern, and performing an etching process to expose the first mask film with the amorphous carbon pattern as an etching mask. The etching process removes the third mask pattern and the exposed second mask pattern.

Abstract: Disclosed herein is a top anti-reflective coating composition comprising a bissulfone compound, as a photoacid generator, represented by Formula 1 below: wherein R1 and R2 are independently, a straight, branched or cyclic alkyl, aryl, alkenyl, oxoalkyl or oxoaryl group of 1 to 20 carbon atoms; or a halogen-substituted straight, branched or cyclic alkyl, aryl, alkenyl, oxoalkyl or oxoaryl group of 1 to 20 carbon atoms. Since the top anti-reflective coating composition dissolves a portion of a photoacid generator present at the top of an underlying photosensitizer, particularly, upon formation of a top anti-reflective coating, it can prevent the top from being formed into a thick section. Therefore, the use of the anti-reflective coating composition enables the formation of a vertical pattern of a semiconductor device.

Abstract: A method for forming a fine pattern of a semiconductor device includes forming a first hard mask layer over a semiconductor substrate and a second hard mask layer over the first hard mask layer, selectively etching the second hard mask layer and the first hard mask layer by using a line/space mask as an etching mask to form a second hard mask layer pattern and a first hard mask layer pattern, forming an insulating film filling the second hard mask layer pattern and the first hard mask layer pattern, selectively etching the second hard mask layer and its underlying first hard mask layer pattern by using the insulating film as an etching mask to form a fourth hard mask layer pattern overlying a third hard mask layer pattern, removing the insulating film and the fourth hard mask layer pattern, and patterning the semiconductor substrate by using the third hard mask layer pattern as an etching mask, to form a fine pattern.

Abstract: A method for forming a fine pattern of a semiconductor device includes forming a first hard mask layer over a semiconductor substrate, forming a second hard mask layer pattern over the first hard mask layer, forming a spacer on a sidewall of the second hard mask layer pattern, selectively etching the first hard mask layer by using the spacer and the second hard mask layer pattern as an etching mask to form a first hard mask layer pattern, forming a first insulating film filling the second hard mask layer pattern and the first hard mask layer pattern, selectively etching the second hard mask layer pattern and the underlying first hard mask layer pattern to form a third hard mask layer pattern, removing the first insulating film and the spacer, and patterning the semiconductor substrate by using the third hard mask layer pattern as an etching mask to form a fine pattern.

Abstract: A method for manufacturing a semiconductor device includes forming an underlying layer over a semiconductor substrate; forming a hard mask layer over the underlying layer; forming first etch patterns over the hard mask layer; forming second etch patterns between the first photoresist patterns; etching the hard mask layer using the first and second etch patterns as an etch mask to form a hard mask pattern; and etching the underlying layer using at least the hard mask pattern. The first and second etch patterns are formed on the same layer.

Abstract: A method for forming a fine pattern of a semiconductor device comprises the steps of: preparing a semiconductor substrate including an underlying layer, an insulating film, a bottom anti-reflection film, and a positive photoresist film sequentially; patterning the positive photoresist film to form a positive photoresist pattern; forming a negative photoresist film over the resulting structure including the positive photoresist pattern; patterning the negative photoresist film to form a negative photoresist pattern between the positive photoresist pattern; patterning the insulating film and the bottom anti-reflection film with the positive photoresist pattern and the negative photoresist pattern as an etching mask to form an insulating film pattern; and patterning the underlying layer with the insulating film pattern as an etching mask.

Abstract: Disclosed herein is a top anti-reflective coating polymer and its composition comprising the same represented by Formula 1 below: wherein R1 and R2 are independently, hydrogen, methyl or fluoromethyl; R3 and R4 are independently, a C1-10hydrocarbon or a C1-10 hydrocarbon in which the hydrogen atoms are wholly or partly replaced by fluorine atoms; and a, b, c, d and e represent the mole fraction of each monomer and are in the range between about 0.05 and about 0.9, such that the sum of a, b, c, d, and e equals one.

Abstract: A method for forming a fine pattern of a semiconductor device includes forming a first photoresist film pattern over a semiconductor substrate including an underlying layer, exposing the first photoresist film pattern to generate an acid from the first photoresist film pattern, bleaching the first photoresist film pattern, and forming a second photoresist film pattern between the first photoresist patterns.

Abstract: Disclosed herein is a photoacid generating polymer represented by Formula 1 below: wherein R1 is a C1-10 hydrocarbon or a C1-10 hydrocarbon in which the hydrogen atoms are wholly or partly replaced by fluorine atoms; R2 is hydrogen or a methyl group; and a, b, c and d represent the mole fraction of each monomer and are in the range between about 0.05 and about 0.9, such that the sum of a, b, c, and d equals one. Since the photoacid generating polymer of Formula 1 is not water-soluble and acts as a photoacid generator, it can be used to prepare a top anti-reflective coating composition for immersion lithography.

Abstract: A method for manufacturing a semiconductor device using an immersion lithography process is disclosed. The immersion lithography process includes forming a photoresist film over an underlying layer of a semiconductor substrate; exposing the photoresist film to light without using an exposure mask; and performing an exposure process using an exposure mask. After exposure using the immersion lithography, a water mark generated from the exposure layer consumes a part of the acid of the exposure layer but the residual acid remains in the exposure layer to prevent generation of pattern defects such as T-top or pattern bridges.