Patents by Inventor Cheol Yoo

Cheol Yoo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Diode having high brightness and method thereof
    Patent number: 8674386
    Abstract: A light emitting diode includes a transparent substrate and a GaN buffer layer on the transparent substrate. An n-GaN layer is formed on the buffer layer. An active layer is formed on the n-GaN layer. A p-GaN layer is formed on the active layer. A p-electrode is formed on the p-GaN layer and an n-electrode is formed on the n-GaN layer. A reflective layer is formed on a second side of the transparent substrate. Also, a cladding layer of AlGaN is between the p-GaN layer and the active layer.
    Type: Grant
    Filed: March 29, 2011
    Date of Patent: March 18, 2014
    Assignee: LG Innotek Co. Ltd.
    Inventor: Myung Cheol Yoo
  • Vertical topology light emitting device
    Patent number: 8669587
    Abstract: A vertical topology light emitting device comprises a support structure, a first adhesion layer, a second adhesion layer, a first metal layer, a second metal layer comprising a portion which directly contacts a GaN-based semiconductor structure, an interface layer, and a contact pad.
    Type: Grant
    Filed: July 3, 2013
    Date of Patent: March 11, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Myung Cheol Yoo
  • Diode having vertical structure and method of manufacturing the same
    Patent number: 8592846
    Abstract: A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.
    Type: Grant
    Filed: August 24, 2011
    Date of Patent: November 26, 2013
    Assignee: LG Electronics Inc.
    Inventor: Myung Cheol Yoo
  • DIODE HAVING VERTICAL STRUCTURE
    Publication number: 20130308671
    Abstract: A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.
    Type: Application
    Filed: July 25, 2013
    Publication date: November 21, 2013
    Applicant: LG ELECTRONICS INC.
    Inventor: Myung Cheol Yoo
  • VERTICAL TOPOLOGY LIGHT EMITTING DEVICE
    Publication number: 20130299779
    Abstract: A vertical topology light emitting device comprises a support structure, a first adhesion layer, a second adhesion layer, a first metal layer, a second metal layer comprising a portion which directly contacts a GaN-based semiconductor structure, an interface layer, and a contact pad.
    Type: Application
    Filed: July 3, 2013
    Publication date: November 14, 2013
    Inventor: Myung Cheol Yoo
  • Vertical topology light emitting device
    Patent number: 8564016
    Abstract: A vertical topology light emitting device comprises a conductive adhesion structure having a first surface and a second surface; a conductive support structure on the first surface; a reflective structure on the second surface, the reflective structure also serving as a first electrode; a semiconductor structure on the reflective structure; and a second electrode on the semiconductor structure.
    Type: Grant
    Filed: November 15, 2012
    Date of Patent: October 22, 2013
    Assignee: LG Electronics Inc.
    Inventor: Myung Cheol Yoo
  • SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF
    Publication number: 20130240919
    Abstract: The present invention relates to a semiconductor device capable of emitting light upon application of voltage and a method for manufacturing the same, and more particularly to a semiconductor device having a polygonal or circular columnar shape and a method for manufacturing the same. The semiconductor device of the present invention comprises a plurality of semiconductor structures and a connecting support layer that supports the plurality of the semiconductor structures, wherein each of the plurality of the semiconductor structures comprises a P-type first semiconductor layer, an N-type second semiconductor layer, and a light-emitting layer located between the first semiconductor layer and the second semiconductor layer, and forms a column having a polygonal or circular shape.
    Type: Application
    Filed: May 1, 2013
    Publication date: September 19, 2013
    Applicant: VERTICLE, INC.
    Inventors: Moo Keun Park, Myung Cheol Yoo, Se Jong Oh
  • Diode having vertical structure and method of manufacturing the same
    Patent number: 8519421
    Abstract: A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.
    Type: Grant
    Filed: August 24, 2011
    Date of Patent: August 27, 2013
    Assignee: LG Electronics Inc.
    Inventor: Myung Cheol Yoo
  • Thin film light emitting diode
    Patent number: 8445921
    Abstract: Light emitting LEDs devices comprised of LED chips that emit light at a first wavelength, and a thin film layer over the LED chip that changes the color of the emitted light. For example, a blue LED chip can be used to produce white light. The thin film layer beneficially consists of a florescent material, such as a phosphor, and/or includes tin. The thin film layer is beneficially deposited using chemical vapor deposition.
    Type: Grant
    Filed: November 10, 2009
    Date of Patent: May 21, 2013
    Assignee: LG Electronics, Inc.
    Inventor: Myung Cheol Yoo
  • Filler material for crowns, crown material containing same, and method of manufacturing thereof
    Patent number: 8431627
    Abstract: The present invention provides a composition for crown material including resin and a fine spherized composite glass powder. The fine composite glass powder of the present invention for such a configuration has superior qualities with regard to both sintering and optical characteristics, and can be used as a filler for crown material.
    Type: Grant
    Filed: August 14, 2009
    Date of Patent: April 30, 2013
    Assignee: Sukgyung AT Co., Ltd.
    Inventors: Hyung Sup Lim, Hyung Joon Lim, Young Cheol Yoo, Sang Heon Kang, Jeong Won Seo
  • Method of fabricating vertical structure LEDs
    Patent number: 8384120
    Abstract: A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, beneficially by using inductive coupled plasma reactive ion etching. The trenches are then filled with an easily removed layer. A metal support structure is then formed on the semiconductor layers (such as by plating or by deposition) and the insulating substrate is removed. Electrical contacts, a passivation layer, and metallic pads are then added to the individual devices, and the individual devices are then diced out.
    Type: Grant
    Filed: March 14, 2011
    Date of Patent: February 26, 2013
    Assignee: LG Electronics Inc.
    Inventors: Jong-Lam Lee, In-kwon Jeong, Myung Cheol Yoo
  • Thin film light emitting diode
    Patent number: 8384091
    Abstract: Light emitting LEDs devices comprised of LED chips that emit light at a first wavelength, and a thin film layer over the LED chip that changes the color of the emitted light. For example, a blue LED chip can be used to produce white light. The thin film layer beneficially consists of a florescent material, such as a phosphor, and/or includes tin. The thin film layer is beneficially deposited using chemical vapor deposition.
    Type: Grant
    Filed: November 10, 2009
    Date of Patent: February 26, 2013
    Assignee: LG Electronics Inc.
    Inventor: Myung Cheol Yoo
  • Method of fabricating vertical devices using a metal support film
    Patent number: 8368115
    Abstract: A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal techniques. Trenches that define the boundaries of the individual devices are formed through the semiconductor layers and into the insulating substrate, beneficially by inductive coupled plasma reactive ion etching. A first support structure is attached to the semiconductor layers. The hard substrate is then removed, beneficially by laser lift off. A second supporting structure, preferably conductive, is substituted for the hard substrate and the first supporting structure is removed. Individual devices are then diced, beneficially by etching through the second supporting structure. A protective photo-resist layer can protect the semiconductor layers from the attachment of the first support structure.
    Type: Grant
    Filed: August 2, 2006
    Date of Patent: February 5, 2013
    Assignee: LG Electronics Inc.
    Inventor: Myung Cheol Yoo
  • METHOD OF MAKING DIODE HAVING REFLECTIVE LAYER
    Publication number: 20120322176
    Abstract: A method of forming a light emitting diode includes forming a transparent substrate and a GaN buffer layer on the transparent substrate. An n-GaN layer is formed on the buffer layer. An active layer is formed on the n-GaN layer. A p-GaN layer is formed on the active layer. A p-electrode is formed on the p-GaN layer and an n-electrode is formed on the n-GaN layer. A reflective layer is formed on a second side of the transparent substrate. A scribe line is formed on the substrate for separating the diodes on the substrate. Also, a cladding layer of AlGaN is between the p-GaN layer and the active layer.
    Type: Application
    Filed: July 16, 2012
    Publication date: December 20, 2012
    Inventor: Myung Cheol Yoo
  • Method of fabricating vertical devices using a metal support film
    Patent number: 8294172
    Abstract: A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal techniques. Trenches that define the boundaries of the individual devices are formed through the semiconductor layers and into the insulating substrate, beneficially by inductive coupled plasma reactive ion etching. A first support structure is attached to the semiconductor layers. The hard substrate is then removed, beneficially by laser lift off. A second supporting structure, preferably conductive, is substituted for the hard substrate and the first supporting structure is removed. Individual devices are then diced, beneficially by etching through the second supporting structure. A protective photo-resist layer can protect the semiconductor layers from the attachment of the first support structure.
    Type: Grant
    Filed: April 9, 2002
    Date of Patent: October 23, 2012
    Assignee: LG Electronics Inc.
    Inventor: Myung Cheol Yoo
  • Thin film light emitting diode
    Patent number: 8288787
    Abstract: Light emitting LEDs devices comprised of LED chips that emit light at a first wavelength, and a thin film layer over the LED chip that changes the color of the emitted light. For example, a blue LED chip can be used to produce white light. The thin film layer beneficially consists of a florescent material, such as a phosphor, and/or includes tin. The thin film layer is beneficially deposited using chemical vapor deposition.
    Type: Grant
    Filed: January 12, 2010
    Date of Patent: October 16, 2012
    Assignee: LG Electronics, Inc.
    Inventor: Myung Cheol Yoo
  • Image forming apparatus and method of controlling the same
    Patent number: 8284454
    Abstract: An image forming apparatus includes a hyper print video controller (HPVC) to generate video data from input data, an engine controller to compensate for a dot offset of the video data and to output the dot offset-compensated video data, and a laser scanning unit to perform a print operation according to the dot offset compensated video data. Therefore, HPVC size is reduced so that chip size can be reduced. This reduction in size accordingly reduces power consumption, and enhances chip efficiency.
    Type: Grant
    Filed: July 17, 2008
    Date of Patent: October 9, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Seung Cheol Yoo
  • Making Method For Titania Nanoparticle
    Publication number: 20120237866
    Abstract: The present invention relates to a method of manufacturing titania nanoparticles, and specifically to a method of manufacturing titania nanoparticles wherein the particle size is uniform, it is possible to manufacture monodisperse particles without aggregation among particles, a uniform coating can be applied, that is suitable to large-scale production, and that can obtain high-resolution images by maintaining the toner electric charge and electric charge distribution; and the developer included in said titania nanoparticles.
    Type: Application
    Filed: March 30, 2012
    Publication date: September 20, 2012
    Applicant: SUKGYUNG AT CO., LTD.
    Inventors: Hyung Sup Lim, Hyung Joon Lim, Young Cheol Yoo, Osung Kwon
  • Method of making diode having reflective layer
    Patent number: 8236585
    Abstract: A method of forming a light emitting diode includes forming a transparent substrate and a GaN buffer layer on the transparent substrate. An n-GaN layer is formed on the buffer layer. An active layer is formed on the n-GaN layer. A p-GaN layer is formed on the active layer. A p-electrode is formed on the p-GaN layer and an n-electrode is formed on the n-GaN layer. A reflective layer is formed on a second side of the transparent substrate. A scribe line is formed on the substrate for separating the diodes on the substrate. Also, a cladding layer of AlGaN is between the p-GaN layer and the active layer.
    Type: Grant
    Filed: July 22, 2010
    Date of Patent: August 7, 2012
    Assignee: LG Electronics Inc.
    Inventor: Myung Cheol Yoo
  • Thin film light emitting diode
    Patent number: 8207552
    Abstract: Light emitting LEDs devices comprised of LED chips that emit light at a first wavelength, and a thin film layer over the LED chip that changes the color of the emitted light. For example, a blue LED chip can be used to produce white light. The thin film layer beneficially consists of a florescent material, such as a phosphor, and/or includes tin. The thin film layer is beneficially deposited using chemical vapor deposition.
    Type: Grant
    Filed: May 18, 2011
    Date of Patent: June 26, 2012
    Assignee: LG Electronics Inc.
    Inventor: Myung Cheol Yoo