Patents by Inventor Cheol Yoo
Cheol Yoo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20200006598Abstract: A vertical topology light emitting device can include a conductive support structure; an adhesion layer disposed on the conductive support structure; a p-type contact disposed on the adhesion layer; a GaN-based semiconductor structure disposed on the p-type contact, in which the GaN-based semiconductor structure includes an n-type GaN-based layer, a p-type GaN-based layer, and an active layer between the n-type GaN-based layer and the p-type GaN-based layer, in which the n-type GaN-based layer has an etched flat surface, and the GaN-based semiconductor structure includes a bottom surface proximate to the conductive support structure, a top surface opposite to the bottom surface, and a side surface between the top surface and the bottom surface; an interface layer on the GaN-based semiconductor structure; and a contact pad disposed on the interface layer, in which the interface layer includes a portion which directly contacts the etched flat surface of the n-type GaN-based layer, and a first thickness of the cType: ApplicationFiled: September 11, 2019Publication date: January 2, 2020Applicant: LG INNOTEK CO., LTD.Inventor: Myung Cheol YOO
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Publication number: 20200006593Abstract: A light-emitting device can include a conductive support structure comprising a metal; a GaN-based semiconductor structure disposed on the conductive support structure, the GaN-based semiconductor structure including a p-type GaN-based layer, a GaN-based active layer and an n-type GaN-based layer, in which the GaN-based semiconductor structure has a first surface, a side surface and a second surface, in which the first surface, relative to the second surface, is proximate to the conductive support structure, in which the second surface is opposite to the first surface, in which the conductive support structure is thicker than the p-type GaN-based semiconductor layer, and the conductive support structure is thicker than the n-type GaN-based semiconductor layer; a p-type electrode disposed on the conductive support structure; an n-type electrode disposed on the second surface of the GaN-based semiconductor structure; and a passivation layer disposed on the side surface and the second surface of the GaN-based seType: ApplicationFiled: September 11, 2019Publication date: January 2, 2020Applicant: LG INNOTEK CO., LTD.Inventors: Jong Lam LEE, ln-kwon JEONG, Myung Cheol YOO
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Patent number: 10461217Abstract: A method for manufacturing a light emitting diode can include forming a GaN-based semiconductor structure with a thickness of less than 5 microns on a substrate, the GaN-based semiconductor structure having a p-type GaN-based semiconductor layer; an active layer on the p-type GaN-based semiconductor layer; and an n-type GaN-based semiconductor layer on the active layer; forming a p-type electrode having multiple metal layers on the GaN-based semiconductor structure; forming a metal support layer on the p-type electrode; removing the substrate from the GaN-based semiconductor structure to expose an upper surface of the GaN-based semiconductor structure; forming an n-type electrode on a flat portion produced by polishing the exposed upper surface of the GaN-based semiconductor structure, not only with overlapping at least a portion of the p-type electrode in a thickness direction of the GaN-based semiconductor structure but also with contacting the flat portion; and forming an insulating layer on the upper surfType: GrantFiled: February 5, 2019Date of Patent: October 29, 2019Assignee: LG INNOTEK CO., LTD.Inventors: Jong Lam Lee, In-Kwon Jeong, Myung Cheol Yoo
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Patent number: 10453993Abstract: A method of manufacturing a light emitting device can include forming an n-type GaN-based layer on a sapphire substrate; forming a GaN-based active layer on the n-type GaN-based layer; forming a p-type GaN-based layer on the GaN-based active layer; forming a p-type electrode on the p-type GaN-based layer; forming a metal substrate on the p-type electrode; removing the sapphire substrate; forming an n-type electrode on the n-type GaN-based layer; forming a passivation layer on a side surface of the p-type GaN-based layer, a side surface of the GaN-based active layer, a side surface of the n-type GaN-based layer, an upper surface of the n-type GaN-based layer, a side surface of the n-type electrode, and an upper surface of the n-type electrode after the forming the n-type electrode; and forming an open space to expose the n-type electrode by patterning the passivation layer.Type: GrantFiled: April 17, 2019Date of Patent: October 22, 2019Assignee: LG INNOTEK CO., LTD.Inventors: Jong Lam Lee, In-kwon Jeong, Myung Cheol Yoo
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Patent number: 10453998Abstract: A light emitting device can include a metal support structure comprising Cu; an adhesion structure on the metal support structure; a reflective conductive contact on the adhesion structure; a GaN-based semiconductor structure on the reflective conductive contact, in which the GaN-based semiconductor structure includes a first-type semiconductor layer on the metal support structure, an active layer on the first-type semiconductor layer, and a second-type semiconductor layer on the active layer, the GaN-based semiconductor structure includes a bottom surface proximate to the metal support structure, a top surface opposite to the bottom surface, and a side surface between the top surface and the bottom surface, and a first thickness of the GaN-based semiconductor structure from the bottom surface to the top surface is less than 5 micrometers; an interface layer on the GaN-based semiconductor structure; and a contact pad on the interface layer, in which a second thickness of the metal support structure is 0.Type: GrantFiled: October 16, 2018Date of Patent: October 22, 2019Assignee: LG INNOTEK CO. LTD.Inventor: Myung Cheol Yoo
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Publication number: 20190312177Abstract: A method of manufacturing a light emitting device can include forming an n-type GaN-based layer on a sapphire substrate; forming a GaN-based active layer on the n-type GaN-based layer; forming a p-type GaN-based layer on the GaN-based active layer; forming a p-type electrode on the p-type GaN-based layer; forming a metal substrate on the p-type electrode; removing the sapphire substrate; forming an n-type electrode on the n-type GaN-based layer; forming a passivation layer on a side surface of the p-type GaN-based layer, a side surface of the GaN-based active layer, a side surface of the n-type GaN-based layer, an upper surface of the n-type GaN-based layer, a side surface of the n-type electrode, and an upper surface of the n-type electrode after the forming the n-type electrode; and forming an open space to expose the n-type electrode by patterning the passivation layer.Type: ApplicationFiled: April 17, 2019Publication date: October 10, 2019Applicant: LG INNOTEK CO., LTD.Inventors: Jong Lam LEE, ln-kwon JEONG, Myung Cheol YOO
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Patent number: 10429121Abstract: A refrigerator including a body having an inner casing and an outer casing, a storage compartment provided in the body to allow a front surface thereof to be open, a door including a first door and a second door pivotably coupled with both sides of the body and configured to open and close the open front surface of the storage compartment, a pivoting bar pivotably coupled with the first door, a guide device coupled with the body to induce the pivoting bar to pivot, a heat transfer pipe installed between the inner casing and the outer casing and configured to extend along a front edge of the storage compartment to allow a refrigerant to be movable therein, and a heat transfer member in contact with the heat transfer pipe and the guide device, and which is formed of a material having a higher thermal conductivity than the inner casing.Type: GrantFiled: November 17, 2015Date of Patent: October 1, 2019Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Seok Jun Yoon, Seung Yong Yang, Su Cheol Yoo, Ha-Jin Jeong
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Publication number: 20190267516Abstract: A light emitting device can include a light emitting structure including a p-GaN based semiconductor layer, an active layer having multiple quantum wells, and an n-GaN based semiconductor layer; a p-electrode and an n-electrode electrically connecting with the light emitting structure, respectively, wherein the n-electrode has a plurality of layers; a first passivation layer including a first portion contacting a portion of the n-electrode, a second portion vertically overlapped with the p-electrode, and a third portion that extends outside of outermost side surfaces of the light emitting structure; a phosphor layer disposed on a top surface of the light emitting structure; and a second passivation layer including a first portion disposed between the phosphor layer and the top surface of the light emitting structure, and a second portion disposed on the outermost side surfaces of the light emitting structure, in which the phosphor layer includes a pattern to bond a wire with a p-pad on a portion of the p-elecType: ApplicationFiled: May 7, 2019Publication date: August 29, 2019Applicant: LG INNOTEK CO., LTD.Inventor: Myung Cheol YOO
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Publication number: 20190229149Abstract: Monolithic pixels are implemented by laterally disposed green, blue and red micro-LED sub-pixels separated by dielectric sidewalls. The green and blue sub-pixels are formed with nitride-based material layers while the red sub-pixel is formed with non-nitride-based material layers that yield an optically-efficient red sub-pixel that is intensity-balanced with the green and blue sub-pixels.Type: ApplicationFiled: January 23, 2019Publication date: July 25, 2019Inventor: Myung Cheol Yoo
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Publication number: 20190218997Abstract: Provided is a piston for an internal combustion engine. The piston includes a body including, at an upper part of the body, a crown including a combustion chamber where fuel is burnt and including, at a lower part of the body, a piston pin boss into which a piston pin is inserted and a skirt corresponding to a cylinder wall, and a cooling channel including a refrigerant channel, a refrigerant inlet provided at a side of the refrigerant channel, and a refrigerant outlet provided at the other side of the refrigerant channel, wherein a cross section of the cooling channel has an overall elliptic shape to reduce stress occurring at an upper side of the cooling channel when the fuel is burnt in the internal combustion engine, and at least one of arcs of the ellipse is configured as a first elliptical arc of a quadratic curve.Type: ApplicationFiled: January 11, 2019Publication date: July 18, 2019Inventors: Jun Kui YANG, Kwan Ho RYU, Sang Hyuk JUN, Woo Seok SHIM, In Cheol YOO, Jang Ik PARK
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Patent number: 10326055Abstract: A light emitting device includes a first conductive-type layer, an active layer, and a second conductive-type layer; a first electrode on a first surface of the first conductive-type layer, the first electrode having a multilayer structure including Pt; a first pad on the first electrode, the first pad disposed on an edge of the first surface of the first conductive-type layer in a cross-sectional view; and a second electrode and a second pad on a second surface of the second conductive-type layer, the second electrode having a metal layer including Ti. In addition, the first pad include Au, further the second electrode is unitary with the second pad, and also the second electrode includes a reflective layer configured to reflect light from the active layer.Type: GrantFiled: June 29, 2018Date of Patent: June 18, 2019Assignee: LG INNOTEK CO., LTD.Inventor: Myung Cheol Yoo
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Patent number: 10326059Abstract: A light emitting device can include a light emitting structure including a p-GaN based layer, an active layer having multiple quantum wells, and an n-GaN based layer; a p-electrode and an n-electrode electrically connecting with the light emitting structure, respectively, in which the n-electrode has a plurality of layers; a phosphor layer disposed on a top surface of the light emitting structure; and a passivation layer disposed between the phosphor layer and the top surface of the light emitting structure, and disposed on outermost side surfaces of the light emitting structure, in which the p-electrode and the n-electrode are disposed on opposite sides of the light emitting structure. Also, the phosphor layer has a two-digit micrometer thickness, and includes a pattern to bond an n-electrode pad on a portion of the n-electrode by a wire, and comprises different phosphor materials configured to emit light of different colors.Type: GrantFiled: June 26, 2017Date of Patent: June 18, 2019Assignee: LG INNOTEK CO., LTD.Inventor: Myung Cheol Yoo
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Publication number: 20190172974Abstract: A method for manufacturing a light emitting diode can include forming a GaN-based semiconductor structure with a thickness of less than 5 microns on a substrate, the GaN-based semiconductor structure having a p-type GaN-based semiconductor layer; an active layer on the p-type GaN-based semiconductor layer; and an n-type GaN-based semiconductor layer on the active layer; forming a p-type electrode having multiple metal layers on the GaN-based semiconductor structure; forming a metal support layer on the p-type electrode; removing the substrate from the GaN-based semiconductor structure to expose an upper surface of the GaN-based semiconductor structure; forming an n-type electrode on a flat portion produced by polishing the exposed upper surface of the GaN-based semiconductor structure, not only with overlapping at least a portion of the p-type electrode in a thickness direction of the GaN-based semiconductor structure but also with contacting the flat portion; and forming an insulating layer on the upper surfType: ApplicationFiled: February 5, 2019Publication date: June 6, 2019Applicant: LG INNOTEK CO., LTD.Inventors: Jong Lam LEE, ln-kwon JEONG, Myung Cheol YOO
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Publication number: 20190123786Abstract: An electronic device according to various exemplary embodiments may include a housing; a first antenna module configured to be disposed in a first end portion in the housing and to include a first antenna and a first amplifier circuitry to output a signal corresponding to the first antenna, a second antenna module configured to be disposed in a second end portion in the housing and to include a second antenna and a second amplifier circuitry to output a signal corresponding to the second antenna, and a transceiver configured to include a first port connected to the first antenna through the first amplifier circuitry and a second port connected to the second antenna through the second amplifier circuitry.Type: ApplicationFiled: October 24, 2018Publication date: April 25, 2019Inventors: Hyang-Bok LEE, Man-Seob KIM, Tae-Lee LEE, Yong-Jun PARK, Sung-Cheol YOO, Hoon-Sang YOO, Jung-Min PARK, Byoung-Ryoul SONG, Joon HEO, Jung-Hoon PARK, Dong-Il SON
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Patent number: 10243101Abstract: A light emitting diode can include a metal support layer: a GaN-based semiconductor structure having a less than 5 microns thickness on the metal support layer, the GaN-based semiconductor structure including a p-type GaN-based semiconductor layer, an active layer on the p-type GaN-based semiconductor layer, and an n-type GaN-based semiconductor layer on the active layer; a p-type electrode on the metal support layer and including a plurality of metal layers; an n-type electrode on a flat portion of an upper surface of the GaN-based semiconductor structure, and the n-type electrode contacts the flat portion; a metal pad layer on the n-type electrode; and an insulating layer including a first part disposed on the upper surface of the GaN-based semiconductor structure, and a second part disposed on an entire side surface of the GaN-based semiconductor structure, in which the metal pad layer includes a first portion having a flat bottom surface on the n-type electrode, and a second portion having stepped surfaceType: GrantFiled: December 4, 2017Date of Patent: March 26, 2019Assignee: LG INNOTEK CO., LTD.Inventors: Jong Lam Lee, In-kwon Jeong, Myung Cheol Yoo
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Patent number: 10221295Abstract: Block for use in a CAD/CAM system for the manufacture of a dental restauration, said block consisting of a thermoplastic polymer comprising PEEK including radiopaque particles selected from the group comprising BaZrO3, YbF3, Yb2O3, SrO, SrZrO3, SiO2—ZrO2, SiO2—Yb2O3, Lu2O3, LuF3.Type: GrantFiled: April 7, 2016Date of Patent: March 5, 2019Assignees: SOCIETE DE RECHERCHES TECHNIQUES DENTAIRES—RTD, SUKGYUNG AT CO., LTDInventors: Pierre-Luc Reynaud, Manh-Quynh Chu, Hyung Sup Lim, Hyung Jun Lim, Young Cheol Yoo
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Publication number: 20190058083Abstract: A light emitting device can include a substrate including first and second surfaces, the substrate having a thickness of less than 350 micrometers; a reflective layer on the second surface of the substrate; a light emitting structure on the first surface of the substrate and including first and second semiconductor layers with an active layer therebetween, the second semiconductor layer includes an aluminum-gallium-nitride layer, and the active layer includes aluminum and indium and has a multiple quantum well layer; a transparent conductive layer disposed on the second semiconductor layer and including an indium-tin-oxide; a first electrode on the first semiconductor layer and including multiple layers; a second electrode on the transparent conductive layer and including multiple layers; first and second pads on the first and second electrodes, respectively, in which the second pad includes the same material as the first pad and has a thickness of more than 500 nanometers.Type: ApplicationFiled: October 22, 2018Publication date: February 21, 2019Applicant: LG INNOTEK CO., LTD.Inventor: Myung Cheol YOO
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Publication number: 20190051796Abstract: A light emitting device can include a metal support structure comprising Cu; an adhesion structure on the metal support structure; a reflective conductive contact on the adhesion structure; a GaN-based semiconductor structure on the reflective conductive contact, in which the GaN-based semiconductor structure includes a first-type semiconductor layer on the metal support structure, an active layer on the first-type semiconductor layer, and a second-type semiconductor layer on the active layer, the GaN-based semiconductor structure includes a bottom surface proximate to the metal support structure, a top surface opposite to the bottom surface, and a side surface between the top surface and the bottom surface, and a first thickness of the GaN-based semiconductor structure from the bottom surface to the top surface is less than 5 micrometers; an interface layer on the GaN-based semiconductor structure; and a contact pad on the interface layer, in which a second thickness of the metal support structure is 0.Type: ApplicationFiled: October 16, 2018Publication date: February 14, 2019Applicant: LG INNOTEK CO., LTD.Inventor: Myung Cheol YOO
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Publication number: 20190034467Abstract: A system and method, including determining, by a processor, distinction bit positions for index keys of a database index; determining, by the processor, concatenation of the bits of the index keys; and generating a record of the concatenation. Other systems and methods include collecting, by a processor, index keys of a database index in parallel, wherein data pages of a target table are evenly distributed to a plurality of processor cores; scanning, by each of the cores the data pages to extract compressed keys and corresponding record identifiers; sorting, by a plurality of the processor cores, pairs of the compressed key and corresponding record identifier in accordance with a parallel sorting algorithm; generating an index tree in a bottom-up fashion; and storing a record of the generated index tree.Type: ApplicationFiled: July 25, 2017Publication date: January 31, 2019Inventors: Yong Sik Kwon, Kunsoo Park, Cheol Yoo
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Publication number: 20180366618Abstract: Residual internal stress within optoelectronic devices such as light-emitting diodes and laser diodes is reduced to improve internal quantum efficiency and thereby increase light output.Type: ApplicationFiled: August 27, 2018Publication date: December 20, 2018Inventor: Myung Cheol Yoo