Patents by Inventor Cherng Chyi Han

Cherng Chyi Han has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070080381
    Abstract: MTJ devices commonly degrade when subjected to the heat treatments required by subsequent further processing. This problem has been overcome by protecting the MTJ's sidewalls with a two layer laminate. The first layer is laid down under oxygen-free conditions, no attempt being made to replace any oxygen that is lost during the deposition. This is followed immediately by the deposition of the second layer (usually, but not mandatorily, of the same material as the first layer) in the presence of some oxygen.
    Type: Application
    Filed: October 12, 2005
    Publication date: April 12, 2007
    Inventors: Chen-Jung Chien, Yu-Hsia Chen, Chyu-Jiuh Torng, Cherng-Chyi Han
  • Patent number: 7196876
    Abstract: A method for forming an abutted junction GMR bottom spin valve sensor in which the free layer has a maximum effective length due to the elimination or minimization of bias layer and conducting lead layer overspreading onto the sensor element and the consequent reduction of current shunting. The overspreading is eliminated by forming a thin dielectric layer on the upper surface of the sensor element. When the biasing and conducting leads are formed on the abutted junction, they overspread onto this layer and the overspread can be removed by an ion-milling process during which the dielectric layer protects the sensor.
    Type: Grant
    Filed: September 6, 2002
    Date of Patent: March 27, 2007
    Assignee: Headway Technologies, Inc.
    Inventors: Cherng-Chyi Han, Mao-Min Chen, Pokang Wang
  • Patent number: 7193814
    Abstract: For high track density recording, tighter reader and writer track width control are essential. This has been achieved by using a plated NiPd write gap which is self-aligned with a plated 23 KG pole material.
    Type: Grant
    Filed: February 17, 2004
    Date of Patent: March 20, 2007
    Assignee: Headway Technologies, Inc.
    Inventors: Cherng-Chyi Han, Mao-Min Chen, Lei Zhang, Xiaomin Liu
  • Patent number: 7154708
    Abstract: A magnetic read/write head and slider assembly and method for forming said magnetic read/write head and slider assembly, wherein said assembly has improved heat spreading and dissipation properties and exhibits significantly reduced thermal protrusion during operation. The method of formation is simple and efficient, involving only the extension of one of the conductive mounting pads so that it is in thermal contact with a portion of the slider assembly surface that is over the read/write element.
    Type: Grant
    Filed: June 30, 2005
    Date of Patent: December 26, 2006
    Assignee: Headway Technologies, Inc.
    Inventors: Devendra S. Chhabra, Rod Lee, Glen Garfunkel, Mor Dovek, Cherng-Chyi Han
  • Patent number: 7152304
    Abstract: Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.
    Type: Grant
    Filed: January 14, 2005
    Date of Patent: December 26, 2006
    Assignee: Headway Technologies, Inc.
    Inventors: Cheng T. Horng, Min Li, Ru-Ying Tong, Yun-Fei Li, You Fong Zheng, Simon Liao, Kochan Ju, Cherng Chyi Han
  • Patent number: 7146711
    Abstract: A method for forming a planar GMR read-head having a narrow read gap, a narrow track-width and being well insulated from its lower shield. The method requires the formation of a planarized bottom magnetic shield in which concave regions, symmetrically disposed about a track-width region, are filled with a layer of dielectric to provide added insulation. The dielectric filled shield is planarized and an additional planar dielectric layer, a thin planar GMR sensor layer and a planar PMGI layer of uniform thickness is formed on it. A layer of photoresist is deposited on the PMGI layer and a bi-layer lift-off stencil of uniform height above the GMR layer and symmetric overhang regions is formed. The uniformity of the lift-off stencil, which is a result of the planarity of the layers on which it is formed, allows the deposition of conductive lead and biasing layers with controlled overspread.
    Type: Grant
    Filed: December 13, 2002
    Date of Patent: December 12, 2006
    Assignee: Headway Technologies, Inc.
    Inventors: Cherng Chyi Han, Mao-Min Chen, Jiun-Ting Lee
  • Patent number: 7134186
    Abstract: Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.
    Type: Grant
    Filed: January 14, 2005
    Date of Patent: November 14, 2006
    Assignee: Headway Technologies, Inc.
    Inventors: Cheng T. Horng, Min Li, Ru-Ying Tong, Yun-Fei Li, You Fong Zheng, Simon Liao, Kochan Ju, Cherng Chyi Han
  • Patent number: 7126789
    Abstract: Present processes used for planarizing a cavity filled with a coil and hard baked photoresist require that a significant amount of the thickness of the coils be removed. This increases the DC resistance of the coil. In the present invention, CMP is terminated as soon as the coils are exposed, allowing their full thickness to be retained and resulting in minimum DC resistance. Application of this process to the manufacture of a planar magnetic write head is described.
    Type: Grant
    Filed: August 1, 2003
    Date of Patent: October 24, 2006
    Assignee: Headway Technologies, Inc.
    Inventors: Cherng Chyi Han, Mao-Min Chen
  • Patent number: 7120989
    Abstract: For PMR (Perpendicular Magnetic Recording) design, one of the major technology problems is the use of CMP to fabricate the pole structure. If the device is under-polished there is a danger of leaving behind a magnetic shorting layer while if it is over-polished there may be damage to the main pole. This problem has been overcome by surrounding the main pole, write gap, stitched write head pillar with a layer of CMP etch stop material which, using optical inspection alone, allows CMP (performed under a first set of conditions) to be terminated just as the stitched write head gets exposed. This is followed by a second CMP step (performed under a second set of conditions) for further fine trimming of the stitched head, as needed.
    Type: Grant
    Filed: February 18, 2004
    Date of Patent: October 17, 2006
    Assignee: Headway Technologies, Inc.
    Inventors: Danning Yang, Cherng-Chyi Han
  • Patent number: 7116518
    Abstract: Present processes used for planarizing a cavity filled with a coil and hard baked photoresist require that a significant amount of the thickness of the coils be removed. This increases the DC resistance of the coil. In the present invention a layer of alumina is deposited onto the surface of the excess photoresist, following which CMP is initiated. The presence of the alumina serves to stabilize the photoresist so that it does not delaminate. CMP is terminated as soon as the coils are exposed, allowing their full thickness to be retained and resulting in minimum DC resistance. Application of this process to the manufacture of a two coil planar magnetic write head is described.
    Type: Grant
    Filed: August 1, 2003
    Date of Patent: October 3, 2006
    Assignee: Headway Technologies, Inc.
    Inventors: Cherng Chyi Han, Mao-Min Chen
  • Patent number: 7106558
    Abstract: A magnetic read head with reduced side reading characteristics is described. This design combines use of a current channeling layer (CCL) with stabilizing longitudinal bias layers whose magnetization direction is canted relative to that of the free layer easy axis and that of the pinned layer (of the GMR). This provides several advantages: First, the canting of the free layer at the side region results in a reduction of side reading by reducing magnetic sensitivity in that region. Second, the CCL leads to a narrow current flow profile at the side region, therefore producing a narrow track width definition. A process for making this device is described. Said process allows some of the requirements for interface cleaning associated with prior art processes to be relaxed.
    Type: Grant
    Filed: June 15, 2004
    Date of Patent: September 12, 2006
    Assignee: Headway Technologies, Inc.
    Inventors: Kochan Ju, You Feng Zheng, Mao-Min Chen, Cherng-Chyi Han, Charles Lin
  • Patent number: 7099125
    Abstract: A problem associated with current bottom spin valve designs is that it is difficult to avoid magnetic charge accumulation at the edge of the sensor area, making a coherent spin rotation during sensing difficult to achieve. This problem has been eliminated by introducing an exchange coupling layer between the free layer and the ferromagnetic layer that is used to achieve longitudinal bias for stabilization and by extending the free layer well beyond the sensor area. After all layers have been deposited, the read gap is formed by etching down as far as this layer. Since it is not critical exactly how much of the biasing layers (antiferromagnetic as well as ferromagnetic) are removed, the etching requirements are greatly relaxed. Whatever material remains in the gap is then oxidized thereby providing a capping layer as well as a good interface for specular reflection in the sensor region.
    Type: Grant
    Filed: November 7, 2005
    Date of Patent: August 29, 2006
    Assignee: Headway Technologies, Inc.
    Inventors: Yun-Fei Li, Hui-Chuan Wang, Chyu-Jiuh Torng, Cherng Chyi Han
  • Publication number: 20060164766
    Abstract: Although it is known that exchange bias can be utilized in abutted junctions for longitudinal stabilization, a relatively large moment is needed to pin down the sensor edges effectively. Due to the inverse dependence of the exchange bias on the magnetic layer thickness, a large exchange bias has been difficult to achieve by the prior art. This problem has been solved by introducing a structure in which the magnetic moment of the bias layer has been approximately doubled by pinning it from both above and below through exchange with antiferromagnetic layers. Additionally, since the antiferromagnetic layer is in direct abutted contact with the free layer, it acts directly to help stabilize the sensor edge, which is an advantage over the traditional magnetostatic pinning that had been used.
    Type: Application
    Filed: March 14, 2006
    Publication date: July 27, 2006
    Inventors: Yun-Fei Li, Hui-Chuan Wang, Chyu-Jiuh Torng, Cherng-Chyi Han, Mao-Min Chen
  • Patent number: 7061730
    Abstract: A spin-valve magnetoresistive read element has a thin conductive lead layer of high sheet conductivity, high hardness, high melting point, high corrosion resistance and lacking the propensity for smearing, oozing, electromigration and nodule formation. Said lead layer is formed upon the hard magnetic longitudinal bias layer of an abutted junction spin-valve type magnetoresistive read head and said read head is therefore suitable for reading high density recorded disks at high RPM.
    Type: Grant
    Filed: August 27, 2003
    Date of Patent: June 13, 2006
    Assignee: Headway Technologies, Inc.
    Inventors: Cheng T. Horng, Mao-Min Chen, Chen-Jung Chien, Cherng-Chyi Han, Chyu-Jiuh Torng, Ru-Ying Tong
  • Patent number: 7047625
    Abstract: Present processes used for planarizing a cavity filled with a coil and hard baked photoresist require that a significant amount of the thickness of the coils be removed. This increases the DC resistance of the coil. In the present invention, cavity and coil are overfilled with photoresist which is then hard baked. A layer of alumina is then deposited onto the surface of the excess photoresist, following which CMP is initiated. The presence of the alumina serves to stabilize the photoresist so that it does not delaminate. CMP is terminated as soon as the coils are exposed, allowing their full thickness to be retained and resulting in minimum DC resistance.
    Type: Grant
    Filed: August 25, 2003
    Date of Patent: May 23, 2006
    Assignee: Headway Technologies, Inc.
    Inventors: Cherng-Chyi Han, Mao-Min Chen, Po Kang Wang
  • Patent number: 7050273
    Abstract: A method for fabricating a longitudinally hard biased, bottom spin valve GMR sensor with a lead overlay (LOL) conducting lead configuration and a narrow effective trackwidth. The advantageous properties of the sensor are obtained by providing two novel barrier layers, one of which prevents oxidation of and Au diffusion into the free layer during annealing and etching and the other of which prevents oxidation of the capping layer during annealing so as to allow good electrical contact between the lead and the sensor stack.
    Type: Grant
    Filed: August 20, 2004
    Date of Patent: May 23, 2006
    Assignee: Headway Technologies, Inc.
    Inventors: Cheng T. Horng, Mao-Min Chen, Chen-Jung Chien, Cherng-Chyi Han, Ru-Ying Tong, Chyu-Jiuh Torng, Hui-Chuan Wang
  • Patent number: 7038880
    Abstract: An inductive-type write head and its method of fabrication are disclosed. The write head has a vertically separated two-element planar coil of reduced resistance which is the result of forming the lower of the two coils with windings of a greater height and substantially larger cross-sectional area than those of the upper coil. The formation of a lower coil with greater height is possible because of a surface planarization that allows separating the coils by an alumina layer of minimal thickness. This method allows the reduction of coil resistance without the necessity of enlarging the head dimensions. The reduced resistance results in lower power consumption and the elimination of pole tip protrusion caused by excessive heating during operation.
    Type: Grant
    Filed: August 1, 2003
    Date of Patent: May 2, 2006
    Assignee: Headway Technologies, Inc.
    Inventors: Cherng-Chyi Han, Danning Yang, Mao-Min Chen
  • Patent number: 7035060
    Abstract: A problem associated with current bottom spin valve designs is that it is difficult to avoid magnetic charge accumulation at the edge of the sensor area, making a coherent spin rotation during sensing difficult to achieve. This problem has been eliminated by introducing an exchange coupling layer between the free layer and the ferromagnetic layer that is used to achieve longitudinal bias for stabilization and by extending the free layer well beyond the sensor area. After all layers have been deposited, the read gap is formed by etching down as far as this layer. Since it is not critical exactly how much of the biasing layers (antiferromagnetic as well as ferromagnetic) are removed, the etching requirements are greatly relaxed. Whatever material remains in the gap is then oxidized thereby providing a capping layer as well as a good interface for specular reflection in the sensor region.
    Type: Grant
    Filed: March 6, 2002
    Date of Patent: April 25, 2006
    Assignee: Headway Technologies, Inc.
    Inventors: Yun-Fei Li, Hui-Chuan Wang, Chyu-Jiuh Torng, Cherng-Chyi Han
  • Patent number: 7022383
    Abstract: Although it is known that exchange bias can be utilized in abutted junctions for longitudinal stabilization, a relatively large moment is needed to pin down the sensor edges effectively. Due to the inverse dependence of the exchange bias on the magnetic layer thickness, a large exchange bias has been difficult to achieve by the prior art. This problem has been solved by introducing a structure in which the magnetic moment of the bias layer has been approximately doubled by pinning it from both above and below through exchange with antiferromagnetic layers. Additionally, since the antiferromagnetic layer is in direct abutted contact with the free layer, it acts directly to help stabilize the sensor edge, which is an advantage over the traditional magnetostatic pinning that had been used.
    Type: Grant
    Filed: October 22, 2002
    Date of Patent: April 4, 2006
    Assignee: Headway Technologies, Inc.
    Inventors: Yun-Fei Li, Hui-Chuan Wang, Chyu-Jiuh Torng, Cherng-Chyi Han, Mao-Min Chen
  • Patent number: 7016165
    Abstract: A method for forming a spin-valve type abutted junction GMR sensor element with a thinner hard magnetic longitudinal bias layer having significantly improved magnetic properties in the junction region and a spin-valve type abutted junction GMR sensor element with a thinner hard magnetic longitudinal bias layer having significantly improved magnetic properties in the junction region fabricated according to that method.
    Type: Grant
    Filed: April 2, 2001
    Date of Patent: March 21, 2006
    Assignee: Headway Technologies, Inc.
    Inventors: Chen-Jung Chien, Chyu-Jiuh Torng, Cherng-Chyi Han, Cheng T. Horng, Mao-Min Chen