Patents by Inventor Cherng-Shyan Tsay
Cherng-Shyan Tsay has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11748549Abstract: Various integrated circuit (IC) design methods are disclosed herein. An exemplary method includes receiving an IC design layout having an IC feature to be formed on a wafer using a lithography process and inserting a spacing in the IC feature, thereby generating a modified IC design layout that divides the IC feature into a first main feature and a second main feature separated by the spacing. The spacing has a sub-resolution dimension, such that the IC feature does not include the spacing when formed on the wafer by the lithography process using the modified IC design layout. A mask can be fabricated based on the modified IC design layout, wherein the mask includes the first main feature and the second main feature separated by the spacing. A lithography process can be performed using the mask to form the IC feature (without the spacing) on a wafer.Type: GrantFiled: April 21, 2021Date of Patent: September 5, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chin-Min Huang, Bo-Han Chen, Cherng-Shyan Tsay, Chien-Wen Lai, Hua-Tai Lin, Chia-Cheng Chang, Lun-Wen Yeh, Shun-Shing Yang
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Publication number: 20210240907Abstract: Various integrated circuit (IC) design methods are disclosed herein. An exemplary method includes receiving an IC design layout having an IC feature to be formed on a wafer using a lithography process and inserting a spacing in the IC feature, thereby generating a modified IC design layout that divides the IC feature into a first main feature and a second main feature separated by the spacing. The spacing has a sub-resolution dimension, such that the IC feature does not include the spacing when formed on the wafer by the lithography process using the modified IC design layout. A mask can be fabricated based on the modified IC design layout, wherein the mask includes the first main feature and the second main feature separated by the spacing. A lithography process can be performed using the mask to form the IC feature (without the spacing) on a wafer.Type: ApplicationFiled: April 21, 2021Publication date: August 5, 2021Inventors: Chin-Min Huang, Bo-Han Chen, Cherng-Shyan Tsay, Chien-Wen Lai, Hua-Tai Lin, Chia-Cheng Chang, Lun-Wen Yeh, Shun-Shing Yang
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Patent number: 10990744Abstract: Various integrated circuit (IC) design methods are disclosed herein. An exemplary method includes receiving an IC design layout having an IC feature to be formed on a wafer using a lithography process and inserting a spacing in the IC feature, thereby generating a modified IC design layout that divides the IC feature into a first main feature and a second main feature separated by the spacing. The spacing has a sub-resolution dimension, such that the IC feature does not include the spacing when formed on the wafer by the lithography process using the modified IC design layout. A mask can be fabricated based on the modified IC design layout, wherein the mask includes the first main feature and the second main feature separated by the spacing. A lithography process can be performed using the mask to form the IC feature (without the spacing) on a wafer.Type: GrantFiled: January 11, 2018Date of Patent: April 27, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chin-Min Huang, Bo-Han Chen, Cherng-Shyan Tsay, Chien Wen Lai, Hua-Tai Lin, Chia-Cheng Chang, Lun-Wen Yeh, Shun-Shing Yang
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Publication number: 20180137233Abstract: Various integrated circuit (IC) design methods are disclosed herein. An exemplary method includes receiving an IC design layout having an IC feature to be formed on a wafer using a lithography process and inserting a spacing in the IC feature, thereby generating a modified IC design layout that divides the IC feature into a first main feature and a second main feature separated by the spacing. The spacing has a sub-resolution dimension, such that the IC feature does not include the spacing when formed on the wafer by the lithography process using the modified IC design layout. A mask can be fabricated based on the modified IC design layout, wherein the mask includes the first main feature and the second main feature separated by the spacing. A lithography process can be performed using the mask to form the IC feature (without the spacing) on a wafer.Type: ApplicationFiled: January 11, 2018Publication date: May 17, 2018Inventors: Chin-Min Huang, Bo-Han Chen, Cherng-Shyan Tsay, Chien Wen Lai, Hua-Tai Lin, Chia-Cheng Chang, Lun-Wen Yeh, Shun-Shing Yang
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Patent number: 9870443Abstract: Provided is an integrated circuit (IC) design method. The method includes receiving a design layout of the IC, the design layout having a first main feature, and adding a negative assist feature to the design layout, wherein the negative assist feature has a first width, the negative assist feature divides the first main feature into a second main feature and a third main feature by the first width, and the first width is sub-resolution in a photolithography process.Type: GrantFiled: November 23, 2015Date of Patent: January 16, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chin-Min Huang, Bo-Han Chen, Cherng-Shyan Tsay, Chien Wen Lai, Hua-Tai Lin, Chia-Cheng Chang, Lun-Wen Yeh, Shun-Shing Yang
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Publication number: 20160085906Abstract: Provided is an integrated circuit (IC) design method. The method includes receiving a design layout of the IC, the design layout having a first main feature, and adding a negative assist feature to the design layout, wherein the negative assist feature has a first width, the negative assist feature divides the first main feature into a second main feature and a third main feature by the first width, and the first width is sub-resolution in a photolithography process.Type: ApplicationFiled: November 23, 2015Publication date: March 24, 2016Inventors: Chin-Min Huang, Bo-Han Chen, Cherng-Shyan Tsay, Chien Wen Lai, Hua-Tai Lin, Chia-Cheng Chang, Lun-Wen Yeh, Shun-Shing Yang
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Patent number: 9213233Abstract: Provided is an integrated circuit (IC) photo mask. The IC photo mask includes a main feature of the IC, the main feature having a plurality of sides, and a plurality of assist features, the assist features being spaced from each other and spaced from the main feature, wherein each one of the assist features is adjacent to one of the sides, each one of the assist features has an elongated shape along a direction, whereby extending the shape in the direction would intersect at least another one of the assist features and the assist features are sub-resolution correction features for correcting for optical proximity effect in a photolithography process.Type: GrantFiled: July 12, 2013Date of Patent: December 15, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Cheng Chang, Wei-Kuan Yu, Yen-Hsu Chu, Tsai-Ming Huang, Chin-Min Huang, Cherng-Shyan Tsay, Chien Wen Lai, Hua-Tai Lin
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Patent number: 9026956Abstract: Some embodiments of the present disclosure relate to a method to simulate patterning of a layout. The method comprises simulating formation of a layout pattern under a first lithography condition. The first lithography condition comprises a set of parameters, wherein a value of each parameter is defined by a corresponding process model. The method further comprises randomly varying the value of each parameter of the first lithography condition within a range of values defined by the corresponding process model of the parameter, to create a second lithography condition. Formation of a layout pattern is then re-simulated under the second lithography condition. Random variation of the value of each parameter is repeated to create additional lithography conditions. And, each lithography condition is re-simulated until the value of each parameter has been substantially varied across a range of its respective process model.Type: GrantFiled: October 11, 2013Date of Patent: May 5, 2015Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chia-Cheng Chang, Wei-Kuan Yu, Tsai-Ming Huang, Chin-Min Huang, Cherng-Shyan Tsay, Chien Wen Lai, Hua-Tai Lin, Shih-Ming Chang
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Publication number: 20150106771Abstract: Some embodiments of the present disclosure relate to a method to simulate patterning of a layout. The method comprises simulating formation of a layout pattern under a first lithography condition. The first lithography condition comprises a set of parameters, wherein a value of each parameter is defined by a corresponding process model. The method further comprises randomly varying the value of each parameter of the first lithography condition within a range of values defined by the corresponding process model of the parameter, to create a second lithography condition. Formation of a layout pattern is then re-simulated under the second lithography condition. Random variation of the value of each parameter is repeated to create additional lithography conditions. And, each lithography condition is re-simulated until the value of each parameter has been substantially varied across a range of its respective process model.Type: ApplicationFiled: October 11, 2013Publication date: April 16, 2015Inventors: Chia-Cheng Chang, Wei-Kuan Yu, Tsai-Ming Huang, Chin-Min Huang, Cherng-Shyan Tsay, Chien Wen Lai, Hua-Tai Lin, Shih-Ming Chang
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Publication number: 20150082265Abstract: One embodiment relates to a method of achieving an circuit dimension which is greater than a size of an exposure field of an illumination tool. A first area of a first reticle field and a second area of a second reticle field are defined. An extension zone is created as a region outside the first area, and includes a first layout shape formed on a first design level. A corresponding forbidden zone is created for the second reticle field as a region inside the second area where no layout shape on the first design level is permitted. A second layout shape is formed on a second design level within the forbidden zone. The first and second areas are then abutted. Upon abutment of the first and second areas, the second layout shape overlaps the first layout shape to form a connection between circuitry of the first and second reticle fields.Type: ApplicationFiled: September 18, 2013Publication date: March 19, 2015Inventors: Chin-Min Huang, Chia-Cheng Chang, Cherng-Shyan Tsay, Chien-Wen Lai, Kong-Beng Thei, Hua-Tai Lin, Hung-Chang Hsieh
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Patent number: 8972912Abstract: One embodiment relates to a method of achieving an circuit dimension which is greater than a size of an exposure field of an illumination tool. A first area of a first reticle field and a second area of a second reticle field are defined. An extension zone is created as a region outside the first area, and includes a first layout shape formed on a first design level. A corresponding forbidden zone is created for the second reticle field as a region inside the second area where no layout shape on the first design level is permitted. A second layout shape is formed on a second design level within the forbidden zone. The first and second areas are then abutted. Upon abutment of the first and second areas, the second layout shape overlaps the first layout shape to form a connection between circuitry of the first and second reticle fields.Type: GrantFiled: September 18, 2013Date of Patent: March 3, 2015Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chin-Min Huang, Chia-Cheng Chang, Cherng-Shyan Tsay, Chien-Wen Lai, Kong-Beng Thei, Hua-Tai Lin, Hung-Chang Hsieh
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Patent number: 8972909Abstract: The present disclosure relates to a method of performing an optical proximity correction (OPC) procedure that provides for a high degree of freedom by using an approximation design layer. In some embodiments, the method is performed by forming an integrated chip (IC) design having an original design layer with one or more original design shapes. An approximation design layer, which is different from the original design layer, is generated from the original design layer. The approximation design layer is a design layer that has been adjusted to remove features that may cause optical proximity correction (OPC) problems. An optical proximity correction (OPC) procedure is then performed on the approximation design layer. By performing the OPC procedure on the approximation design layer rather than on the original design layer, characteristics of the OPC procedure can be improved.Type: GrantFiled: September 27, 2013Date of Patent: March 3, 2015Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chia-Cheng Chang, Jau-Shian Liang, Wen-Chen Lu, Chin-Min Huang, Ming-Hui Chih, Cherng-Shyan Tsay, Chien-Wen Lai, Hua-Tai Lin
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Publication number: 20150017571Abstract: Provided is an integrated circuit (IC) photo mask. The IC photo mask includes a main feature of the IC, the main feature having a plurality of sides, and a plurality of assist features, the assist features being spaced from each other and spaced from the main feature, wherein each one of the assist features is adjacent to one of the sides, each one of the assist features has an elongated shape along a direction, whereby extending the shape in the direction would intersect at least another one of the assist features and the assist features are sub-resolution correction features for correcting for optical proximity effect in a photolithography process.Type: ApplicationFiled: July 12, 2013Publication date: January 15, 2015Inventors: Chia-Cheng CHANG, Wei-Kuan Yu, Yen-Hsu Chu, Tsai-Ming Huang, Chin-Min Huang, Cherng-Shyan Tsay, Chien Wen Lai, Hua-Tai Lin
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Patent number: 8677290Abstract: A method of forming a photolithography mask including forming a first linear non-dense feature on the mask and forming a plurality of parallel linear assist features disposed substantially perpendicular to the at least one linear non-dense design feature. In an embodiment, the photolithography mask further includes a first transverse linear assist feature disposed substantially transverse to the plurality of parallel linear assist features.Type: GrantFiled: October 20, 2011Date of Patent: March 18, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yung-Sung Yen, Kuei Shun Chen, Chien-Wen Lai, Cherng-Shyan Tsay
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Patent number: 8589830Abstract: Provided is an integrated circuit (IC) design method. The method includes receiving an IC design layout having a feature with an outer boundary, performing a dissection on the feature to divide the outer boundary into a plurality of segments, and performing, using the segments, an optical proximity correction (OPC) on the feature to generate a modified outer boundary. The method also includes simulating a photolithography exposure of the feature with the modified outer boundary to create a contour and performing an OPC evaluation to determine if the contour is within a threshold. Additionally, the method includes repeating the performing a dissection, the performing an optical proximity correction, and the simulating if the contour does not meet the threshold, wherein each repeated dissection and each repeated optical proximity correction is performed on the modified outer boundary generated by the previously performed optical proximity correction.Type: GrantFiled: March 7, 2012Date of Patent: November 19, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Cheng Chang, Chin-Min Huang, Wei-Kuan Yu, Cherng-Shyan Tsay, Lai Chien Wen, Hua-Tai Lin
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Publication number: 20130239071Abstract: Provided is an integrated circuit (IC) design method. The method includes receiving an IC design layout having a feature with an outer boundary, performing a dissection on the feature to divide the outer boundary into a plurality of segments, and performing, using the segments, an optical proximity correction (OPC) on the feature to generate a modified outer boundary. The method also includes simulating a photolithography exposure of the feature with the modified outer boundary to create a contour and performing an OPC evaluation to determine if the contour is within a threshold. Additionally, the method includes repeating the performing a dissection, the performing an optical proximity correction, and the simulating if the contour does not meet the threshold, wherein each repeated dissection and each repeated optical proximity correction is performed on the modified outer boundary generated by the previously performed optical proximity correction.Type: ApplicationFiled: March 7, 2012Publication date: September 12, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chia-Cheng Chang, Chin-Min Huang, Wei-Kuan Yu, Cherng-Shyan Tsay, Lai Chien Wen, Hua-Tai Lin
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Publication number: 20120040276Abstract: A method of forming a photolithography mask including forming a first linear non-dense feature on the mask and forming a plurality of parallel linear assist features disposed substantially perpendicular to the at least one linear non-dense design feature. In an embodiment, the photolithography mask further includes a first transverse linear assist feature disposed substantially transverse to the plurality of parallel linear assist features.Type: ApplicationFiled: October 20, 2011Publication date: February 16, 2012Applicant: Taiwan Semiconductor Manufacturing Company, Ltd., ("TSMC")Inventors: Yung-Sung Yen, Kuei Shun Chen, Chien-Wen Lai, Cherng-Shyan Tsay
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Patent number: 8048590Abstract: A photolithography mask includes a design feature located in an isolated or semi-isolated region of the mask and a plurality of parallel linear assist features disposed substantially perpendicular to the design feature. The plurality of parallel linear assist features may include a first series of parallel assist features disposed on a first side of the design feature and perpendicularly thereto, and a second series of parallel assist features disposed on a second side of the design feature and perpendicularly thereto.Type: GrantFiled: June 8, 2009Date of Patent: November 1, 2011Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yung-Sung Yen, Kuei Shun Chen, Chien-Wen Lai, Cherng-Shyan Tsay
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Patent number: 7778805Abstract: An optimized optical proximity correction modeling method comprises receiving a selection of a regression method, displaying regression parameters, receiving values for the displayed regression parameters, receiving a selection of an optimization method, displaying optimization parameters, receiving values for the displayed optimization parameters, and generating an optimized optical proximity correction output.Type: GrantFiled: July 28, 2005Date of Patent: August 17, 2010Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wen Chun Huang, Ru-Gun Liu, Chih-Ming Lai, Chen Kun Tsai, Chien Wen Lai, Cherng-Shyan Tsay, Cheng Cheng Kuo, Yao-Ching Ku
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Publication number: 20090246648Abstract: A photolithography mask includes a design feature located in an isolated or semi-isolated region of the mask and a plurality of parallel linear assist features disposed substantially perpendicular to the design feature. The plurality of parallel linear assist features may include a first series of parallel assist features disposed on a first side of the design feature and perpendicularly thereto, and a second series of parallel assist features disposed on a second side of the design feature and perpendicularly thereto.Type: ApplicationFiled: June 8, 2009Publication date: October 1, 2009Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yung-Sung Yen, Kuei Shun Chen, Chien-Wen Lai, Cherng-Shyan Tsay