Abstract: Methods and systems for controlling temperatures in plasma processing chamber for a wide range of setpoint temperatures and reduced energy consumption. Temperature control is coordinated between a coolant liquid loop and a heat source by a control algorithm implemented by the plasma processing module controller. The control algorithm may completely stop the flow of coolant liquid to a temperature-controlled component in response to a feedback signal indicating an actual temperature is below the setpoint temperature. The control algorithm may further be based at least in part on a feedforward control signal derived from a plasma power or change in plasma power input into the processing chamber during process recipe execution.

Abstract: A stage assembly (10) that moves a device (15) includes a stage (14) that retains the device (15), a base (12), a stage mover assembly (16), and a supply system (20A). The supply system (20A) is secured to and positioned on the stage (14). The supply system (20A) includes a circulation system (24) that circulates a circulation fluid (22) through a circulation conduit (14D) in the stage (14) to control the temperature of the stage (14) and the device (15).

Abstract: Methods and systems for controlling temperatures in plasma processing chamber with reduced controller response times and increased stability. Temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. A feedforward control signal compensating disturbances in the temperature attributable to the plasma power may be combined with a feedback control signal counteracting error between a measured and desired temperature.

Abstract: Methods and systems for controlling temperatures in plasma processing chamber with reduced controller response times and increased stability. Temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. A feedforward control signal compensating disturbances in the temperature attributable to the plasma power may be combined with a feedback control signal counteracting error between a measured and desired temperature.

Abstract: Methods and systems for controlling temperatures in plasma processing chamber via pulsed application of heating power and pulsed application of cooling power. In an embodiment, temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. In further embodiments, fluid levels in each of a hot and cold reservoir coupled to the temperature controlled component are maintained in part by a passive leveling pipe coupling the two reservoirs. In another embodiment, digital heat transfer fluid flow control valves are opened with pulse widths dependent on a heating/cooling duty cycle value and a proportioning cycle having a duration that has been found to provide good temperature control performance.

Abstract: Methods and systems for controlling temperatures in plasma processing chamber via pulsed application of heating power and pulsed application of cooling power. In an embodiment, temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. In further embodiments, fluid levels in each of a hot and cold reservoir coupled to the temperature controlled component are maintained in part by a passive leveling pipe coupling the two reservoirs. In another embodiment, digital heat transfer fluid flow control valves are opened with pulse widths dependent on a heating/cooling duty cycle value and a proportioning cycle having a duration that has been found to provide good temperature control performance.

Abstract: Methods for cooling process chamber components are provided herein. In some embodiments, a method of cooling a process chamber component may include reducing a power provided to a heater disposed proximate a surface of the process chamber component to reduce an amount of heat provided to the component by the heater; providing a coolant to coolant channels disposed within the process chamber component using a pulsed flow having a duty cycle until the process chamber component reaches a temperature that is less than or equal to a predetermined magnitude above a temperature of the coolant; and after the process chamber component reaches the temperature less than or equal to the predetermined magnitude above a temperature of the coolant, reducing the duty cycle of the pulsed flow of the coolant to zero.

Abstract: A stage assembly (10) that includes (i) a stage (14) that retains a device (26); (ii) a reaction assembly (18) that is spaced apart from the stage (14); (iii) a stage mover (16) that moves the stage (14), the stage mover (16) including a magnet array (38) that is coupled to the stage (14) and a conductor array (36) that is coupled to the reaction assembly (18); (iv) a temperature adjuster (20); and (v) a control system (22) that selectively controls the temperature adjuster (20). The conductor array (36) includes a set of first zone conductor units (250), and a set of second zone conductor units (252). The temperature adjuster (20) independently adjusts the temperature of the set of first zone conductor units (250), and the set of second zone conductor units (252).

Abstract: Methods and systems for controlling temperatures in plasma processing chamber for a wide range of setpoint temperatures and reduced energy consumption. Temperature control is coordinated between a coolant liquid loop and a heat source by a control algorithm implemented by the plasma processing module controller. The control algorithm may completely stop the flow of coolant liquid to a temperature-controlled component in response to a feedback signal indicating an actual temperature is below the setpoint temperature. The control algorithm may further be based at least in part on a feedforward control signal derived from a plasma power or change in plasma power input into the processing chamber during process recipe execution.

Abstract: A stage assembly that moves a device includes a stage that retains the device, a stage mover that moves the stage, a measurement system that provides a measurement signal that relates to the position or movement of the stage, and a control system that control the stage mover. The control system can use an estimator to estimate the position of the stage in the event the measurement signal is lost. Alternatively, the control system can be used to urge the stage against a base assembly when the measurement signal is lost to inhibit the movement of the stage.

Abstract: Methods and systems for controlling temperatures in plasma processing chamber via pulsed application of heating power and pulsed application of cooling power. In an embodiment, temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. In further embodiments, fluid levels in each of a hot and cold reservoir coupled to the temperature controlled component are maintained in part by a passive leveling pipe coupling the two reservoirs. In another embodiment, digital heat transfer fluid flow control valves are opened with pulse widths dependent on a heating/cooling duty cycle value and a proportioning cycle having a duration that has been found to provide good temperature control performance.

Abstract: Methods and systems for controlling temperatures in plasma processing chamber for a wide range of setpoint temperatures and reduced energy consumption. Temperature control is coordinated between a coolant liquid loop and a heat source by a control algorithm implemented by the plasma processing module controller. The control algorithm may completely stop the flow of coolant liquid to a temperature-controlled component in response to a feedback signal indicating an actual temperature is below the setpoint temperature. The control algorithm may further be based at least in part on a feedforward control signal derived from a plasma power or change in plasma power input into the processing chamber during process recipe execution.

Abstract: A stage assembly for positioning a device includes: (i) a stage that retains the device; (ii) a base; (iii) a mover assembly that moves the stage along a first axis, along a second axis, and along a third axis relative to the base; (iv) a magnetic sensor system that monitors the movement of the stage along the first, second and third axes, the magnetic sensor system generating a magnetic sensor signal; (v) a second sensor system that monitors the movement of the stage along the first, second and third axes, the second sensor system generating a second sensor signal; and (vi) a control system that controls the mover assembly using at least one of the magnetic sensor signal and the second sensor signal.

Abstract: Components and systems for controlling a process or chamber component temperature as a plasma process is executed by plasma processing apparatus. A first heat transfer fluid channel is disposed in a component subjacent to a working surface disposed within a plasma processing chamber such that a first length of the first channel subjacent to a first temperature zone of the working surface comprises a different heat transfer coefficient, h, or heat transfer area, A, than a second length of the first channel subjacent to a second temperature zone of the working surface. In embodiments, different heat transfer coefficients or heat transfer areas are provided as a function of temperature zone to make more independent the temperature control of the first and second temperature zones.

Abstract: Components and systems for controlling a process or chamber component temperature as a plasma process is executed by plasma processing apparatus. A first heat transfer fluid channel is disposed in a component subjacent to a working surface disposed within a plasma processing chamber such that a first length of the first channel subjacent to a first temperature zone of the working surface comprises a different heat transfer coefficient, h, or heat transfer area, A, than a second length of the first channel subjacent to a second temperature zone of the working surface. In embodiments, different heat transfer coefficients or heat transfer areas are provided as a function of temperature zone to make more independent the temperature control of the first and second temperature zones.

Abstract: According to one aspect, a stage apparatus includes a first surface, a second surface, an overall magnet array, and a plurality of coils. The overall magnet array is mounted on the first surface, and includes an X magnet array and a Y magnet array. The coils are mounted on the second surface, and include a first coil that cooperates with the X magnet array to control force on the first surface along an x-axis. The coils also include a second coil that cooperates with the Y magnet array to control force on the first surface along a y-axis. The second coil cooperates with the overall magnet array to control force applied to the first surface in a direction normal to the first surface. The first coil does not cooperate with the overall magnet array to control the force applied in the direction normal to the first surface.

Abstract: Methods and systems for controlling temperatures in plasma processing chamber with a combination of proportional and pulsed fluid control valves. A heat transfer fluid loop is thermally coupled to a chamber component, such as a chuck. The heat transfer fluid loop includes a supply line and a return line to each of hot and cold fluid reservoirs. In an embodiment, an analog valve (e.g., in the supply line) is controlled between any of a closed state, a partially open state, and a fully open state based on a temperature control loop while a digital valve (e.g., in the return line) is controlled to either a closed state and a fully open state.

Abstract: Methods for cooling process chamber components are provided herein. In some embodiments, a method of cooling a process chamber component may include reducing a power provided to a heater disposed proximate a surface of the process chamber component to reduce an amount of heat provided to the component by the heater; providing a coolant to coolant channels disposed within the process chamber component using a pulsed flow having a duty cycle until the process chamber component reaches a temperature that is less than or equal to a predetermined magnitude above a temperature of the coolant; and after the process chamber component reaches the temperature less than or equal to the predetermined magnitude above a temperature of the coolant, reducing the duty cycle of the pulsed flow of the coolant to zero.

Abstract: Methods and systems for controlling temperatures in plasma processing chamber via pulsed application of heating power and pulsed application of cooling power. In an embodiment, temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. In further embodiments, fluid levels in each of a hot and cold reservoir coupled to the temperature controlled component are maintained in part by a passive leveling pipe coupling the two reservoirs. In another embodiment, digital heat transfer fluid flow control valves are opened with pulse widths dependent on a heating/cooling duty cycle value and a proportioning cycle having a duration that has been found to provide good temperature control performance.

Abstract: Methods and systems for controlling temperatures in plasma processing chamber for a wide range of setpoint temperatures and reduced energy consumption. Temperature control is coordinated between a coolant liquid loop and a heat source by a control algorithm implemented by the plasma processing module controller. The control algorithm may completely stop the flow of coolant liquid to a temperature-controlled component in response to a feedback signal indicating an actual temperature is below the setpoint temperature. The control algorithm may further be based at least in part on a feedforward control signal derived from a plasma power or change in plasma power input into the processing chamber during process recipe execution.