Abstract: Disclosed herein is a method for identifying and treating a subject having stages III or IV osteoarthritis (OA). The method includes steps of, determining the respective levels of chondroitin-4-sulfate (C4S) and chondroitin-6-sulfate (C6S) derived from a chondroitin sulfate (CS) chain of bikunin in a biological sample of the subject; calculating a risk score (RS) of the subject with the equation: R ? S = 1 1 + e - f ? ( x ) , in which f(x)=?9.3875+0.1356×(the age of the subject)+1.1493×(the level of C4S/the level of C6S) when the subject is a female, or f(x)=?10.3389+0.1356×(the age of the subject)+1.1493×(the level of C4S/the level of C6S) when the subject is a male; and treating the subject with an analgesic, a non-steroidal anti-inflammatory drug (NSAID), a corticosteroid or a combination thereof when the determined risk score is above 0.745.

Abstract: An electrochromic rearview mirror assembly comprises a first substrate, a second substrate, an electrochromic medium, a light-transmitting conductive layer, a transflective film and a hiding perimeter layer. The first substrate includes a first surface and a second surface. The first surface comprises a first peripheral region and a first primary region. The second surface comprises a second peripheral region and a second primary region. The second substrate comprises a third surface and a fourth surface. The electrochromic medium is disposed between the first substrate and the second substrate. The light-transmitting conductive layer is disposed on the second primary region of the second surface. The transflective film is disposed on the third surface of the second substrate. The hiding perimeter layer is disposed on the second peripheral region of the second surface.

Abstract: A method includes etching a gate stack to form a trench extending through the gate stack, the gate stack including a metal gate electrode and a gate dielectric, wherein forming the trench removes a portion of the gate stack to separate the gate stack into a first gate stack portion and a second gate stack portion; extending the trench through an isolation region under the gate stack and into a semiconductor substrate under the isolation region; conformally depositing a first dielectric material on surfaces in the trench; and depositing a second dielectric material on the first dielectric material to fill the trench, wherein the first dielectric material is a more flexible material than the second dielectric material.

Abstract: In some embodiments, a semiconductor device is provided. The semiconductor device includes a gate electrode disposed on a substrate. Source/drain regions are disposed on or within the substrate along opposing sides of the gate electrode. A noise reducing component is arranged along an upper surface of the gate electrode and/or along an upper surface of the substrate over the source/drain regions. A cap layer covers the upper surface of the gate electrode and/or the upper surface of the substrate over the source/drain regions. An inter-level dielectric (ILD) is disposed over and along one or more sidewalls of the cap layer.

Abstract: A touch detection system includes a stylus, a panel and a processing circuit. The panel can include a plurality of sensing cells used to receive a first signal and a second signal generated by a touch event. The processing circuit can be coupled to the panel and used to determine a plurality of first areas and a plurality of first intensities corresponding to the first signal, determine a plurality of second areas and a plurality of second intensities corresponding to a second signal, and determine whether the touch event is triggered by the stylus touching the panel according to the first intensities, first areas, the second intensities and the second areas.

Abstract: An embodiment includes a method including forming an opening in a cut metal gate region of a metal gate structure of a semiconductor device, conformally depositing a first dielectric layer in the opening, conformally depositing a silicon layer over the first dielectric layer, performing an oxidation process on the silicon layer to form a first silicon oxide layer, filling the opening with a second silicon oxide layer, performing a chemical mechanical polishing on the second silicon oxide layer and the first dielectric layer to form a cut metal gate plug, the chemical mechanical polishing exposing the metal gate structure of the semiconductor device, and forming a first contact to a first portion of the metal gate structure and a second contact to a second portion of the metal gate structure, the first portion and the second portion of the metal gate structure being separated by the cut metal gate plug.

Abstract: A method includes forming a gate electrode on a semiconductor region, recessing the gate electrode to generate a recess, performing a first deposition process to form a first metallic layer on the gate electrode and in the recess, wherein the first deposition process is performed using a first precursor, and performing a second deposition process to form a second metallic layer on the first metallic layer using a second precursor different from the first precursor. The first metallic layer and the second metallic layer comprise a same metal. The method further incudes forming a dielectric hard mask over the second metallic layer, and forming a gate contact plug penetrating through the dielectric hard mask. The gate contact plug contacts a top surface of the second metallic layer.

Abstract: A structure for holding a battery on an automated guided vehicle (AGV) so as to allow easy and convenient battery replacement includes two fixed supports and a bracket. The bracket is connected between the two supports and each support defines a vertical groove and two horizontal grooves. Two sliders at the ends of the bracket are insertable into either horizontal groove. The two sliders can move down along the vertical groove together until the bracket makes contact with the battery and holds it in place. The two sliders can move up along the vertical groove and sideways into the horizontal grooves, thereby unlatching and releasing the battery for rapid replacement. An AGV using the structure is also disclosed.

Abstract: An energy absorbing structure comprises a first connecting member, a second connecting member, a brittle connecting member and an elastic buffering element. The first connecting member comprises a first end portion, and the first end portion defines a first accommodating cavity. The second connecting member comprise a second end portion, the second end portion defines a second accommodating cavity, and the first accommodating cavity communicates with the second accommodating cavity to form a telescopic cavity. The first connecting member and the second connecting member are connected by the brittle connecting member, the brittle connecting member is configured for breaking during a collision to absorb the energy generated by the collision. The elastic buffering element is arranged in the telescopic cavity, and the elastic buffering element is configured to be compressed by the first connecting member and the second connecting element together to deform and absorb energy during a collision.

Abstract: Disclosed herein are methods relating to embodiments of a real-time texting system which approximates elements of in person conversation. The real-time texting system may include features relating to conveying nuance, visualizing interruptions, and visualizing silences and the passage of time.

Abstract: An integrated circuit includes a first-type active-region structure and a second-type active-region structure extending in a first direction and a first terminal-conductor and a second terminal-conductor extending in a second direction. The integrated circuit also includes a first power stub and a second power stub in a first metal layer and a first power line and a second power line in a second metal layer. The integrated circuit further includes a first via connector directly connected between the first power stub and the first terminal-conductor, a second via connector directly connected between the second power stub and the second terminal-conductor, a third via connector directly connected between the first power stub and the first power line, and a fourth via connector directly connected between the second power stub and the second power line.

Abstract: A host system operates to manage a storage device. The host system initiates an abort of a command when the command has been fetched from a submission queue (SQ) of the host system and the SQ entry has been fetched from the SQ and the host system has not received a corresponding command completion response from the storage device. The host system sends an abort request to the storage device, and issues a cleanup request to direct a host controller to reclaim host hardware resources allocated to the command. The host system adds a completion queue (CQ) entry to a CQ and sets an overall command status (OCS) value of the CQ entry to indicate completion of the abort request.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a capacitor over a substrate. The capacitor includes a plurality of conductive layers and a plurality of dielectric layers. The plurality of conductive layers and dielectric layers define a base structure and a first protrusion structure extending downward from the base structure towards a bottom surface of the substrate. The first protrusion structure comprises one or more surfaces defining a first cavity. A top of the first cavity is disposed below the base structure.

Abstract: An information handling system detects an initial insertion of an alternating current (AC) adapter, and determines an identifier associated with the AC adapter. The system may also determine a parameter for attenuating noise generated by the AC adapter based on the identifier, and attenuate the noise generated by the AC adapter by applying the parameter.

Abstract: A semiconductor device and method of manufacture are provided. In embodiments a dielectric fin is formed in order to help isolate adjacent semiconductor fins. The dielectric fin is formed using a deposition process in which deposition times and temperatures are utilized to increase the resistance of the dielectric fin to subsequent etching processes.

Abstract: A monitor holder is provided, comprising a connecting component, a base and an absorbing component, the connecting component is connected to the vehicle monitor, the base is provided with a first groove, the connecting component is arranged in the first groove, the first groove is provided with a space configured for the connecting component to slide, the base is connected to the vehicle body; the absorbing component is arranged between the connecting component and the base, the connecting component and the base are abutted against the absorbing component, the connecting component is wrapped around the base when the absorbing component is deformed. A vehicle monitor device is also provided.

Abstract: A transportation control system, a transportation device, and a transportation control method related to an automated transportation control method are used to provide automated transportation between platforms which are not interconnected. The transportation control method includes receiving a sensed signal which corresponds to a location of a transportation platform, generating a first motion command according to the sensed signal, transmitting the first motion command to a controller which controls the transportation platform, sensing a location of the transportation platform from different sensing locations to generate the sensed signal, transmitting the sensed signal through a network, and controlling the transportation platform to move by the controller in response to the first motion command.

Abstract: A clock control method for a High Definition Multimedia Interface (HDMI) receiver operating in a power-saving mode in a sink device is provided. The HDMI receiver has a first module, a second module, and a third module. The clock control method includes the following stages. A clock signal is enabled to be sent to the first module and the third module during a first region of received data. The clock signal is disabled to be sent to the second module during the first region of the received data. The clock signal is enabled to be sent to the third module and the clock signal is disabled to be sent to the first module and the second module during a second region of the received data.

Abstract: A positive electrode active material includes a compound represented by formula 1: Li(1.333?0.667x?cz?ca)Mn(0.667?0.333x?0.5y)Ni(x?0.5y+cz)M(y+ca)O(2?b)Fb (1), wherein, 0<b<0.1, c=(0 or 1), 0.2<x<0.35, 0.04<y<0.09, 1<1.333?0.667x?cz?a<1.20, 0.5<0.667?0.333x?0.5y<0.667, 0.13<x?0.5y+cz<0.5, 0<y+ca<0.13, and M is Co, Cr, or a combination thereof. This positive electrode active material can be used within the context of a lithium-ion battery or a cell of a lithium-ion battery.

Abstract: A positive electrode active material includes a compound represented by formula 1: Li(1.1+a)Mn(0.51+c)Ni(0.37?x)MxO(2?b)Fb (1), wherein M is Co, Cr, or a combination thereof, 0?a?0.02, 0<b<0.01, 0?c?0.1, and 0<x<0.1. This positive electrode active material can be used within the context of a lithium-ion battery or a cell of a lithium-ion battery.