Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate. A first precursor and a second precursor are combined. The first precursor is an organometallic having a formula: MaRbXc, where M is one or more of Sn, Bi, Sb, In, and Te, R is one or more of a C7-C11 aralkyl group, a C3-C10 cycloalkyl group, a C2-C10 alkoxy group, and a C2-C10 alkylamino group, X is one or more of a halogen, a sulfonate group, and an alkylamino group, and 1?a?2, b?1, c?1, and b+c?4, and the second precursor is one or more of water, an amine, a borane, and a phosphine. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern. The latent pattern is developed by applying a developer to the selectively exposed photoresist layer.

Abstract: A display device includes an in-cell touch display panel, a flexible printed circuit board, and a source driver. The in-cell touch display panel includes touch sensing electrodes, touch sensing pins, pixel electrodes, and source pins. The touch sensing pins are electrically connected to the touch sensing electrodes. The source pins are electrically connected to the pixel electrodes. The flexible circuit board includes dummy pads, touch sensing leads, input pads, output pads, and output signal leads. The touch sensing leads are electrically connected to the dummy pads and the touch sensing pins. The output signal leads are electrically connected to the output pads and the source pins. The source driver includes input terminals and output terminals. The input terminals are electrically connected to the input pads. The output terminals are electrically connected to the output pads. The source driver does not include a touch sensing terminal.

Abstract: A method for treating Type II diabetes. The method involves administering to a subject a pharmaceutical composition comprising an effective amount of a 5-HT1A receptor antagonist. The pharmaceutical composition comprises an effective amount of a 5-HT1A receptor antagonist, and pharmaceutically acceptable carriers thereof.

Abstract: A carrier-attached ultra-thin copper foil and a method for producing the same are provided. The carrier-attached ultra-thin copper foil includes a copper foil carrier, a release layer, and an ultra-thin copper foil layer. The release layer is formed on a side surface of the copper foil carrier. The release layer contains a copper-containing organic compound, and a chemical structure of the copper-containing organic compound has at least a copper-nitrogen bond (Cu—N bond). The ultra-thin copper foil layer is formed on a side surface of the release layer away from the copper foil carrier. The copper foil carrier is capable of being separated from the ultra-thin copper foil layer through the release layer.

Abstract: Semiconductor devices and methods of manufacturing are presented in which inner spacers for nanostructures are manufactured. In embodiments a dielectric material is deposited for the inner spacer and then treated. The treatment may add material and cause an expansion in volume in order to close any seams that can interfere with subsequent processes.

Abstract: An object detection system and an object detection method are provided. The object detection system includes a transmitter, a receiver, and a processing circuit. The processing circuit is configured to: control the transmitter to transmit by a predetermined field pattern multiple detection signals in different time frames along a main beam direction; control the receiver to receive multiple reflection signals; correspondingly calculate multiple received powers, distances and velocities; perform a clustering process on the distances and the velocities to find the received powers, the distances and the velocities corresponding to a main target; perform an association process to track the distances and the received powers of the main target in the different time frames; and calculate a power and a distance trend of the main target, and determine whether an early alarm event is to occur according to a relationship between the power and the distance trend.

Abstract: A semiconductor structure includes a substrate, semiconductor layers, source/drain features, metal oxide layers, and a gate structure. The semiconductor layers are over the substrate and spaced apart from each other in a Z-direction. The source/drain features are over the substrate. The semiconductor layers are between the source/drain features. The metal oxide layers are on top surfaces and bottom surfaces of the semiconductor layers. The gate structure covers and is in contact with center portions of the metal oxide layers on top surfaces and bottom surfaces of the semiconductor layers.

Abstract: This invention provides herbal compositions useful for increasing the therapeutic index of chemotherapeutic compounds. This invention also provides methods useful for improving the quality of life of an individual undergoing chemotherapy. Furthermore, this invention improves the treatment of disease by increasing the therapeutic index of chemotherapy drugs by administering the herbal composition PHY906 to a mammal undergoing such chemotherapy.

Abstract: The present invention discloses a touch display driving circuit, which generates a plurality of scan signals and a plurality of source signals for driving a touch display panel to display images. The touch display driving circuit further comprises a touch detection circuit and one or more current-source. The touch detection circuit detects a plurality of sensing signals of the touch display panel in a touch detection cycle for detecting touches on the touch display panel. The one or more current-source outputs one or more current signal in the touch detection cycle for maintaining the average values of the levels of the plurality of scan signals or the average values of the levels of the plurality of source signal at a predetermined level and maintaining the display electrodes of the touch display panel floating.

Abstract: A method of forming semiconductor devices having improved work function layers and semiconductor devices formed by the same are disclosed. In an embodiment, a method includes depositing a gate dielectric layer on a channel region over a semiconductor substrate; depositing a first p-type work function metal on the gate dielectric layer; performing an oxygen treatment on the first p-type work function metal; and after performing the oxygen treatment, depositing a second p-type work function metal on the first p-type work function metal.

Abstract: Semiconductor devices including fin-shaped isolation structures and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a fin extending from a semiconductor substrate; a shallow trench isolation (STI) region over the semiconductor substrate adjacent the fin; and a dielectric fin structure over the STI region, the dielectric fin structure extending in a direction parallel to the fin, the dielectric fin structure including a first liner layer in contact with the STI region; and a first fill material over the first liner layer, the first fill material including a seam disposed in a lower portion of the first fill material and separated from a top surface of the first fill material, a first carbon concentration in the lower portion of the first fill material being greater than a second carbon concentration in an upper portion of the first fill material.

Abstract: An image sensor can be provided by: forming an array of image pixels on a semiconductor substrate; forming black level correction (BLC) pixels adjacent to the array of image pixels on the semiconductor substrate; forming a patterned layer stack over the array of image pixels and over the BLC pixels, wherein the patterned layer stack includes N repetitions of a unit layer stack in which N instances of the unit layer stack are repeated along a vertical direction; forming an optically transparent layer over an entirety of the patterned layer stack, wherein the optically transparent layer has a planar top surface; forming an infrared blocking material layer over the optically transparent layer; and patterning the infrared blocking material layer. A remaining portion of the infrared blocking material layer covers the BLC pixels, and does not cover the array of image pixels.

Abstract: An abnormal detection circuit is provided. The abnormal detection circuit includes a conversion circuit, a voltage detection circuit, and a warning circuit. The conversion circuit receives a three-phase alternating current (AC) power and converts the three-phase AC power into a driving power. The voltage detection circuit detects each phase of the three-phase AC power. When a voltage value of at least one phase AC power of the three-phase AC power is abnormal, the voltage detection circuit uses the driving power to output at least one control signal corresponding to the abnormality. The warning circuit is driven by receiving the driving power and outputs at least one warning signal corresponding to the abnormality in response to the at least one control signal.

Abstract: Methods for removing haze defects from a photomask or reticle are disclosed. The photomask is placed into a chamber which includes a hydrogen atmosphere. The photomask is then exposed to radiation. The energy from the radiation, together with the hydrogen, causes decomposition of the haze defects. The methods can be practiced on-site and quickly, without the need for wet chemicals or the need to remove the pellicle before cleaning of the photomask. A device for conducting the methods is also disclosed herein.

Abstract: The present disclosure provides an electronic device including a first sensing unit, a first transistor coupled to the first sensing unit, a second transistor coupled to the first transistor, a second sensing unit, a third transistor coupled to the second sensing unit, a fourth transistor coupled to the third transistor, a first signal line coupled to the second transistor and the fourth transistor, and a power line coupled to the first transistor and the third transistor, in which the power line is disposed between the first sensing unit and the second sensing unit.

Abstract: A wireless charging assembly including a base body, a charging coil, a magnet and a plurality of partitions. The charging coil is disposed in the base body. The magnet includes a body part and a plurality of protruding parts. The plurality of protruding parts protrude from a side of the body part. The body part and the plurality of protruding parts are integrally formed as a single piece. The body part is disposed in the base body. The plurality of partitions are connected to the base body. The plurality of protruding parts of the magnet are spaced apart from each other by the plurality of partitions.

Abstract: A method includes following steps. A target layer is formed over a substrate. A first hard mask layer is formed over the target layer by a plasma generated using a first radio frequency generator and a second radio frequency generator. The first radio frequency generator and the second radio frequency generator have different powers. A second hard mask layer is formed over the first hard mask layer by a plasma generated using the first radio frequency generator without using the second radio frequency generator. A photoresist layer is formed over the second hard mask layer. The photoresist layer is exposed. The photoresist layer is developed. The first hard mask layer and the second hard mask layer are patterned using the photoresist layer as an etch mask. The target layer is patterned using the first hard mask layer and the second hard mask layer as an etch mask.

Abstract: Method of manufacturing semiconductor device includes forming photoresist layer over substrate. Forming photoresist layer includes combining first precursor and second precursor in vapor state to form photoresist material, wherein first precursor is organometallic having formula: MaRbXc, where M at least one of Sn, Bi, Sb, In, Te, Ti, Zr, Hf, V, Co, Mo, W, Al, Ga, Si, Ge, P, As, Y, La, Ce, Lu; R is substituted or unsubstituted alkyl, alkenyl, carboxylate group; X is halide or sulfonate group; and 1?a?2, b?1, c?1, and b+c?5. Second precursor is at least one of an amine, a borane, a phosphine. Forming photoresist layer includes depositing photoresist material over the substrate. The photoresist layer is selectively exposed to actinic radiation to form latent pattern, and the latent pattern is developed by applying developer to selectively exposed photoresist layer to form pattern.

Abstract: A method of manufacturing semiconductor device includes forming a multilayer photoresist structure including a metal-containing photoresist over a substrate. The multilayer photoresist structure includes two or more metal-containing photoresist layers having different physical parameters. The metal-containing photoresist is a reaction product of a first precursor and a second precursor, and each layer of the multilayer photoresist structure is formed using different photoresist layer formation parameters. The different photoresist layer formation parameters are one or more selected from the group consisting of the first precursor, an amount of the first precursor, the second precursor, an amount of the second precursor, a length of time each photoresist layer formation operation, and heating conditions of the photoresist layers.

Abstract: An image adjustment method, applied to an image sensing system comprising an image sensor, comprising: (a) sensing a target image by the image sensor; (b) dividing the target image to a plurality of image regions; (c) acquiring location information of at least one first target feature in the image regions; (d) computing brightness information of each of the image regions; (e) generating adjustment curves according to the brightness information and according to required brightness values of each of the image regions; and (f) adjusting brightness values of the image regions according to the adjustment curves. The step (d) adjusts the brightness information according to the location information or the step (e) adjusts the adjustment curves according to the location information.