Abstract: A method of forming a semiconductor device includes: forming a dummy gate over a fin, where the fin protrudes above a substrate; surrounding the dummy gate with a dielectric material; and replacing the dummy gate with a replacement gate structure, where replacing the dummy gate includes: forming a gate trench in the dielectric material, where forming the gate trench includes removing the dummy gate; forming a metal-gate stack in the gate trench, where forming the metal-gate stack includes forming a gate dielectric layer, a first work function layer, and a gap-filling material sequentially in the gate trench; and enlarging a volume of the gap-filling material in the gate trench.

Abstract: An integrated circuit device includes a first-type active-region semiconductor structure extending and a second-type active-region semiconductor structure both extending in a first direction. The second-type active-region semiconductor structure is stacked with the first-type active-region semiconductor structure. The integrated circuit device also includes a front-side conductive layer above the two active-region semiconductor structures and a back-side conductive layer below the two active-region semiconductor structures. The integrated circuit device still includes a front-side power rail extending in the second direction in the front-side conductive layer and a back-side power rail extending in the second direction in the back-side conductive layer. The integrated circuit device further includes a first source conductive segment connected to the front-side power rail and a second source conductive segment connected to the back-side power rail.

Abstract: An artificial leather and a method for manufacturing the artificial leather are provided. The artificial leather includes a fabric layer, a thermoplastic polyolefin layer, a modified thermoplastic polyolefin layer, and a polyurethane surface layer. The thermoplastic polyolefin layer is disposed on the fabric layer. The modified thermoplastic polyolefin layer is disposed on the thermoplastic polyolefin layer. The polyurethane surface layer is attached to the modified thermoplastic polyolefin layer through an adhesive.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a semiconductor die, a lid, a liquid metal, a gel and a thermal dissipation structure. The semiconductor die is disposed on the substrate. The lid is disposed on the substrate and covers the semiconductor die. The lid has an opening to expose the semiconductor die. The liquid metal is disposed on the semiconductor die. The gel is disposed between the semiconductor die and the lid. The thermal dissipation structure is disposed on the lid and covers the opening. The semiconductor die, the gel and the thermal dissipation structure form a closed space for accommodating the liquid metal.

Abstract: A method of forming a semiconductor device includes: forming a dummy gate over a fin, where the fin protrudes above a substrate; surrounding the dummy gate with a dielectric material; and replacing the dummy gate with a replacement gate structure, where replacing the dummy gate includes: forming a gate trench in the dielectric material, where forming the gate trench includes removing the dummy gate; forming a metal-gate stack in the gate trench, where forming the metal-gate stack includes forming a gate dielectric layer, a first work function layer, and a gap-filling material sequentially in the gate trench; and enlarging a volume of the gap-filling material in the gate trench.

Abstract: A thermoplastic artificial leather includes a thermoplastic composite laminate and a textile base. The thermoplastic composite laminate includes a foamed thermoplastic elastic layer, an unfoamed thermoplastic elastic layer and a thermoplastic adhesive layer. The foamed thermoplastic elastic layer has a first surface, a second surface and a plurality of foamed structures. The second surface is opposite to the first surface. The unfoamed thermoplastic elastic layer is disposed on the first surface of the foamed thermoplastic elastic layer. The thermoplastic adhesive layer is disposed on the second surface of the foamed thermoplastic elastic layer. The textile base is laminated on the thermoplastic adhesive layer of the thermoplastic composite laminate.

Abstract: The present disclosure is relates to a conductive film and a manufacturing method thereof. The conductive film includes a base layer, a TPU complex layer, a conductive layer and a TPU surface layer. The TPU complex layer includes a TPU heat-resistant layer and a TPU melting layer. The TPU heat-resistant layer is disposed on the TPU melting layer, and the TPU melting layer is disposed on the base layer. The conductive layer includes a conductive circuit disposed on the TPU heat-resistant layer. The TPU surface layer is disposed on the conductive layer. Utilizing the TPU complex layer, the conductive layer does not contact directly with the base layer to avoid breaking the conductive line of the conductive layer when the base layer is pulled. Therefore, the lifetime of the conductive film can be increased.

Abstract: A thermal compensation system for machine tools includes a thermal compensation-monitoring device and a cloud processing device. The thermal compensation-monitoring device receives a plurality of temperature signals of a workpiece and corresponding processing tolerance data to build or update a thermal compensation database. The cloud processing device provides a thermal compensation model, and applies the model with the characterized temperature signals and the tolerance data to generate a compensation value so as to decide whether or not to modify the model or to run a compensation is necessary.

Abstract: This invention discloses a display device mother substrate, a display device substrate and a manufacture method of display device substrate thereof. The display device mother substrate includes a first substrate, a second substrate, a first active area circuit and a first transmission line, wherein a first cutting line is defined between the first substrate and the second substrate. The first active area circuit is disposed on the first substrate and is electrically connected to the first transmission line. The first transmission line includes a display line portion, an end line portion and a middle line portion, wherein the display line portion is electrically connected to the first active area circuit. The middle line portion is disposed on the second substrate, wherein two ends of the middle line portion are electrically connected to the display line portion and the end line portion respectively at the first cutting line.

Abstract: This invention discloses a display device mother substrate, a display device substrate and a manufacture method of display device substrate thereof. The display device mother substrate includes a first substrate, a second substrate, a first active area circuit and a first transmission line, wherein a first cutting line is defined between the first substrate and the second substrate. The first active area circuit is disposed on the first substrate and is electrically connected to the first transmission line. The first transmission line includes a display line portion, an end line portion and a middle line portion, wherein the display line portion is electrically connected to the first active area circuit. The middle line portion is disposed on the second substrate, wherein two ends of the middle line portion are electrically connected to the display line portion and the end line portion respectively at the first cutting line.

Abstract: This invention discloses a display device mother substrate, a display device substrate and a manufacture method of display device substrate thereof. The display device mother substrate includes a first substrate, a second substrate, a first active area circuit and a first transmission line, wherein a first cutting line is defined between the first substrate and the second substrate. The first active area circuit is disposed on the first substrate and is electrically connected to the first transmission line. The first transmission line includes a display line portion, an end line portion and a middle line portion, wherein the display line portion is electrically connected to the first active area circuit. The middle line portion is disposed on the second substrate, wherein two ends of the middle line portion are electrically connected to the display line portion and the end line portion respectively at the first cutting line.

Abstract: This invention relates to a drill structure having cutting blade, comprises a drill tip, a cone top part, head part, cutting part, scrap-guiding slot and drill body. The drill tip forms a top end tip of a cone point, the cone top part is installed underneath the drill tip, its head part is a columnar body takes the cone top part, a pair of blade parts is installed at two halves of the cone top part respectively, the blade parts extend a cutting angle from the cone top part, the scrap-guiding slot is a slope surface extends from the drill tip through the cone top part to the head part, the drill body comprises at least one scrap-release screw line; a scrap-release slope is installed in between the scrape surface and drill tips to enhance the hole-drilling precision, drilling capability and scrap-release capability.

Abstract: This invention relates to a drill having hole-drilling alignment precision, and drilling capability, and scrap-release capability. It comprises a drill tip on the cutting part and a drill body with at least two radially reverse screw slots, the drill body comprises an extended clamp part; the drill tip having two more pointed and symmetrical surfaces of pointed, conical, cylindrical shape on the front surface and wedge shape cone on the side surface, the central drilling point on the drill tip of the two symmetrical surfaces forms a point, one side of the symmetrical surface is a cone surface; another side is a scrape surface having an outer side of the front end larger than the drill body, the blade end is installed at the outer side of the scrape surface; a scrap-release slope installed in between the scrape surface and the drill tip to enhance the above mentioned capabilities.