Abstract: A method is disclosed for controlling the sheet resistance of copper trenches formed on semiconductor wafers. The method includes forming a plurality of copper-filled trenches on a wafer, measuring the sheet resistance of each of the plurality of copper-filled trenches, and comparing the measured sheet resistance values to a predetermined sheet resistance value. Photolithography steps performed on subsequent wafers are adjusted according to a difference between the measured sheet resistance values and the predetermined value. In one embodiment, this adjustment takes the form of adjusting a photolithographic extension exposure energy to thereby adjust the cross-section of the resulting trenches.

Abstract: A method for improving within-wafer uniformity is provided. The method includes forming an electrical component by a first process step and a second process step, wherein the electrical component has a target electrical parameter. The method includes providing a first plurality of production tools for performing the first process step; providing a second plurality of production tools for performing the second process step; providing a wafer; performing the first process step on the wafer using one of the first plurality of production tools; and selecting a first route including a first production tool from the second plurality of production tools. A within-wafer uniformity of the target electrical parameter on the wafer manufactured by the first route is greater than a second route including a second production tool in the second plurality of production tools.

Abstract: A primary supramolecular structure is described. The primary supramolecular structure has a shape of ring-like disk. The shape of ring-like disk has a diameter of about 10 nanometers to about 60 nanometers. The mentioned primary supramolecular structure is formed by self-assembly of amphiphilic conjugate molecules. Moreover, a secondary supramolecular structure is described. The secondary supramolecular structure has a shape of ring-like disk. The shape of ring-like disk has a diameter of about 100 nanometers to about 300 nanometers. The mentioned secondary supramolecular structure is formed by self-assembly of amphiphilic conjugate molecules hybrid with metal alkoxides or non-metal alkoxides.