Patents by Inventor Chi-Chung JEN

Chi-Chung JEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12218253
    Abstract: A flash memory device and method of making the same are disclosed. The flash memory device is located on a substrate and includes a floating gate electrode, a tunnel dielectric layer located between the substrate and the floating gate electrode, a smaller length control gate electrode and a control gate dielectric layer located between the floating gate electrode and the smaller length control gate electrode. The length of a major axis of the smaller length control gate electrode is less than a length of a major axis of the floating gate electrode.
    Type: Grant
    Filed: April 15, 2023
    Date of Patent: February 4, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Yu-Chu Lin, Chi-Chung Jen, Wen-Chih Chiang, Yi-Ling Liu, Huai-Jen Tung, Keng-Ying Liao
  • Patent number: 12199159
    Abstract: A flash memory device includes a floating gate electrode formed within a substrate semiconductor layer having a doping of a first conductivity type, a pair of active regions formed within the substrate semiconductor layer, having a doping of a second conductivity type, and laterally spaced apart by the floating gate electrode, an erase gate electrode formed within the substrate semiconductor layer and laterally offset from the floating gate electrode, and a control gate electrode that overlies the floating gate electrode. The floating gate electrode may be formed in a first opening in the substrate semiconductor layer, and the erase gate electrode may be formed in a second opening in the substrate semiconductor layer. Multiple instances of the flash memory device may be arranged as a two-dimensional array of flash memory cells.
    Type: Grant
    Filed: June 19, 2023
    Date of Patent: January 14, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Yu-Chu Lin, Chia-Ming Pan, Chi-Chung Jen, Wen-Chih Chiang, Huai-Jen Tung, Keng-Ying Liao
  • Patent number: 12191338
    Abstract: A device is disclosed. The device includes a plurality of pixels disposed over a first surface of a semiconductor layer. The device includes a device layer disposed over the first surface. The device includes metallization layers disposed over the device layer. One of the metallization layers, closer to the first surface than any of other ones of the metallization layers, includes at least one conductive structure. The device includes an oxide layer disposed over a second surface of the semiconductor layer, the second surface being opposite to the first surface, the oxide layer also lining a recess that extends through the semiconductor layer. The device includes a spacer layer disposed between inner sidewalls of the recess and the oxide layer. The device includes a pad structure extending through the oxide layer and the device layer to be in physical contact with the at least one conductive structure.
    Type: Grant
    Filed: July 26, 2022
    Date of Patent: January 7, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Keng-Ying Liao, Huai-jen Tung, Chih Wei Sung, Po-zen Chen, Yu-chien Ku, Yu-Chu Lin, Chi-Chung Jen, Yen-Jou Wu, S. S. Wang
  • Publication number: 20240387749
    Abstract: Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first terminal coupled to a substrate of the semiconductor structure. The first terminal comprises a tunneling layer formed on the substrate, a first conductive structure formed on the tunneling layer, and a dielectric structure formed on a top surface and on a first curved side surface of the first conductive structure. The semiconductor structure includes a second terminal coupled to the substrate. The second terminal comprises a second conductive structure formed on an isolation structure. The second conductive structure has a second curved side surface, and the dielectric structure is disposed between the first curved side surface and the second curved side surface.
    Type: Application
    Filed: July 30, 2024
    Publication date: November 21, 2024
    Inventors: Yu-Chu LIN, Wen-Chih CHIANG, Chi-Chung JEN, Ming-Hong SU, Mei-Chen SU, Chia-Wei LEE, Kuan-Wei SU, Chia-Ming PAN
  • Patent number: 12148808
    Abstract: A memory device includes a semiconductor substrate, a first continuous floating gate structure, a dielectric layer, and a control gate electrode. The semiconductor substrate has a first active region. The first continuous floating gate structure is over the first active region of the semiconductor substrate, wherein the first continuous floating gate structure has first and second inner sidewalls facing each other. The dielectric layer has a first portion extending along the first inner sidewall of the first continuous floating gate structure and a second portion extending along the second inner sidewall of the first continuous floating gate structure. The control gate electrode is over the dielectric layer. The control gate electrode is in contact with the first and second portions of the dielectric layer.
    Type: Grant
    Filed: September 28, 2023
    Date of Patent: November 19, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Chu Lin, Chi-Chung Jen, Yen-Di Wang, Jia-Yang Ko, Men-Hsi Tsai
  • Publication number: 20240355630
    Abstract: A semiconductor structure including a pillar structure and a spacer structure is provided. The pillar structure is disposed over a substrate, and comprises: a lower layer, disposed on the substrate; an upper layer, disposed over the lower layer; and a dielectric layer, disposed between the lower layer and the upper layer, wherein the upper layer includes a first portion and a second portion disposed below and connecting the first portion. The spacer structure laterally surrounds the pillar structure, and comprises: an upper portion, surrounding the first portion of the upper layer; and a lower portion, disposed below and connecting the upper portion, wherein a first thickness of the upper portion is substantially greater than a second thickness of the lower portion. A method for manufacturing a semiconductor structure is also provided.
    Type: Application
    Filed: April 20, 2023
    Publication date: October 24, 2024
    Inventors: YU-CHUN SHEN, CHI-CHUNG JEN, KAI-HUNG HSIAO, SZU-HSIEN LEE, WEN-CHIH CHIANG
  • Publication number: 20240347359
    Abstract: A method includes: receiving at least one semiconductor wafer to a wafer carrier, wherein the wafer carrier has an inspection window arranged on a side of the wafer carrier; transporting the wafer carrier between a plurality of semiconductor tools; and in response to an emergent event, switching the inspection window to a transparent mode for a predetermined period.
    Type: Application
    Filed: April 11, 2023
    Publication date: October 17, 2024
    Inventors: CHI JIA WANG, CHI-CHUNG JEN, KAI-HUNG HSIAO, HUI AN LI, WEN-CHIH CHIANG
  • Publication number: 20240347645
    Abstract: Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first terminal coupled to a substrate of the semiconductor structure, with the first terminal including a first portion of a tunneling layer formed on the substrate, and a first gate formed on the first portion of the tunneling layer. The semiconductor structure includes a second terminal coupled to the substrate and adjacent to the first terminal, with the second terminal including a second portion of the tunneling layer formed on the substrate, a second gate formed on the second portion of the tunneling layer, and a dielectric structure formed on a top surface and side surfaces of the second gate. The semiconductor structure includes a third terminal coupled to an insulating structure and adjacent to the second terminal, with the third terminal including, a third gate formed on the insulating structure.
    Type: Application
    Filed: June 24, 2024
    Publication date: October 17, 2024
    Inventors: Yu-Chu LIN, Wen-Chih CHIANG, Chi-Chung JEN, Ming-Hong SU, Mei-Chen SU, Chia-Wei LEE, Kuan-Wei SU, Chia-Ming PAN
  • Publication number: 20240347360
    Abstract: A wafer storage device is provided. The wafer storage device includes a floor, a ceiling, and one or more walls between the floor and the ceiling to define a wafer storage chamber for storage of one or more wafers. The apparatus includes a particle-attraction object, having a positive charge or a negative charge, in the wafer storage chamber and configured to attract particles in the wafer storage chamber.
    Type: Application
    Filed: April 17, 2023
    Publication date: October 17, 2024
    Inventors: Yuan-Cheng KUO, Chi-Chung JEN, Kai-Hung HSIAO, Pei-Huang HSU, Chih-Hsiung HUANG
  • Patent number: 12113135
    Abstract: Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first terminal coupled to a substrate of the semiconductor structure. The first terminal comprises a tunneling layer formed on the substrate, a first conductive structure formed on the tunneling layer, and a dielectric structure formed on a top surface and on a first curved side surface of the first conductive structure. The semiconductor structure includes a second terminal coupled to the substrate. The second terminal comprises a second conductive structure formed on an isolation structure. The second conductive structure has a second curved side surface, and the dielectric structure is disposed between the first curved side surface and the second curved side surface.
    Type: Grant
    Filed: February 27, 2023
    Date of Patent: October 8, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Chu Lin, Wen-Chih Chiang, Chi-Chung Jen, Ming-Hong Su, Mei-Chen Su, Chia-Wei Lee, Kuan-Wei Su, Chia-Ming Pan
  • Publication number: 20240258145
    Abstract: A semiconductor wafer processing system includes a stocker having an interior surface, a wafer carrier disposed within the stocker, a wafer shelf disposed within the wafer carrier for storing a semiconductor wafer, and a discharge circuit including a first conductor electrically coupled to the wafer shelf and a first current controller electrically coupled to the first conductor and to the interior surface of the stocker.
    Type: Application
    Filed: February 12, 2024
    Publication date: August 1, 2024
    Inventors: Kai-Hung HSIAO, Chi-Chung JEN, Yu-Chun SHEN, Jhang-Jie JIAN, Wen-Chih CHIANG
  • Patent number: 12051755
    Abstract: Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first terminal coupled to a substrate of the semiconductor structure, with the first terminal including a first portion of a tunneling layer formed on the substrate, and a first gate formed on the first portion of the tunneling layer. The semiconductor structure includes a second terminal coupled to the substrate and adjacent to the first terminal, with the second terminal including a second portion of the tunneling layer formed on the substrate, a second gate formed on the second portion of the tunneling layer, and a dielectric structure formed on a top surface and side surfaces of the second gate. The semiconductor structure includes a third terminal coupled to an insulating structure and adjacent to the second terminal, with the third terminal including, a third gate formed on the insulating structure.
    Type: Grant
    Filed: August 31, 2021
    Date of Patent: July 30, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Chu Lin, Wen-Chih Chiang, Chi-Chung Jen, Ming-Hong Su, Mei-Chen Su, Chia-Wei Lee, Kuan-Wei Su, Chia-Ming Pan
  • Publication number: 20240136444
    Abstract: A flash memory device and method of making the same are disclosed. The flash memory device is located on a substrate and includes a floating gate electrode, a tunnel dielectric layer located between the substrate and the floating gate electrode, a smaller length control gate electrode and a control gate dielectric layer located between the floating gate electrode and the smaller length control gate electrode. The length of a major axis of the smaller length control gate electrode is less than a length of a major axis of the floating gate electrode.
    Type: Application
    Filed: December 22, 2023
    Publication date: April 25, 2024
    Inventors: Yu-Chu Lin, Chi-Chung Jen, Wen-Chih Chiang, Yi-Ling Liu, Huai-Jen Tung, Keng-Ying Liao
  • Publication number: 20240079263
    Abstract: A wafer container includes a frame, a door and at least a pair of shelves. The frame has opposite sidewalls. The pair of the shelves are respectively disposed and aligned on the opposite sidewalls of the frame. Various methods and devices are provided for holding at least one wafer to the shelves during transport.
    Type: Application
    Filed: February 22, 2023
    Publication date: March 7, 2024
    Inventors: Kai-Hung HSIAO, Chi-Chung JEN, Yu-Chun SHEN, Yuan-Cheng KUO, Chih-Hsiung HUANG, Wen-Chih CHIANG
  • Patent number: 11903193
    Abstract: A MOSFET device and method of making, the device including a floating gate layer formed within a trench in a substrate, a tunnel dielectric layer located on sidewalls and a bottom of the trench, a control gate dielectric layer located on a top surface of the floating gate layer, a control gate layer located on a top surface of the control gate dielectric layer and sidewall spacers located on sidewalls of the control gate dielectric layer and the control gate layer.
    Type: Grant
    Filed: July 13, 2022
    Date of Patent: February 13, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Chi-Chung Jen, Yu-Chu Lin, Y. C. Kuo, Wen-Chih Chiang, Keng-Ying Liao, Huai-Jen Tung
  • Patent number: 11901207
    Abstract: A semiconductor wafer processing system includes a stocker having an interior surface, a wafer carrier disposed within the stocker, a wafer shelf disposed within the wafer carrier for storing a semiconductor wafer, and a discharge circuit including a first conductor electrically coupled to the wafer shelf and a first current controller electrically coupled to the first conductor and to the interior surface of the stocker.
    Type: Grant
    Filed: September 1, 2021
    Date of Patent: February 13, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
    Inventors: Kai-Hung Hsiao, Chi-Chung Jen, Yu-Chun Shen, Jhang-Jie Jian, Wen-Chih Chiang
  • Patent number: 11888074
    Abstract: A flash memory device and method of making the same are disclosed. The flash memory device is located on a substrate and includes a floating gate electrode, a tunnel dielectric layer located between the substrate and the floating gate electrode, a smaller length control gate electrode and a control gate dielectric layer located between the floating gate electrode and the smaller length control gate electrode. The length of a major axis of the smaller length control gate electrode is less than a length of a major axis of the floating gate electrode.
    Type: Grant
    Filed: July 19, 2022
    Date of Patent: January 30, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Yu-Chu Lin, Chi-Chung Jen, Yi-Ling Liu, Wen-Chih Chiang, Keng-Ying Liao, Huai-Jen Tung
  • Publication number: 20240030302
    Abstract: A memory device includes a semiconductor substrate, a first continuous floating gate structure, a dielectric layer, and a control gate electrode. The semiconductor substrate has a first active region. The first continuous floating gate structure is over the first active region of the semiconductor substrate, wherein the first continuous floating gate structure has first and second inner sidewalls facing each other. The dielectric layer has a first portion extending along the first inner sidewall of the first continuous floating gate structure and a second portion extending along the second inner sidewall of the first continuous floating gate structure. The control gate electrode is over the dielectric layer. The control gate electrode is in contact with the first and second portions of the dielectric layer.
    Type: Application
    Filed: September 28, 2023
    Publication date: January 25, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Chu LIN, Chi-Chung JEN, Yen-Di WANG, Jia-Yang KO, Men-Hsi TSAI
  • Publication number: 20240021736
    Abstract: In some implementations, one or more semiconductor processing tools may form a first terminal of a semiconductor device by depositing a tunneling oxide layer on a first portion of a body of the semiconductor device, depositing a first volume of polysilicon-based material on the tunneling oxide layer, and depositing a first dielectric layer on an upper surface and a second dielectric layer on a side surface of the first volume of polysilicon-based material. The one or more semiconductor processing tools may form a second terminal of the semiconductor device by depositing a second volume of polysilicon-based material on a second portion of the body of the semiconductor device. A side surface of the second volume of polysilicon-based material is adjacent to the second dielectric layer.
    Type: Application
    Filed: July 26, 2023
    Publication date: January 18, 2024
    Inventors: Yu-Chu LIN, Chi-Chung JEN, Wen-Chih CHIANG, Ming-Hong SU, Yung-Han CHEN, Mei-Chen SU, Chia-Ming PAN
  • Patent number: 11830918
    Abstract: A memory device is provided. The memory device includes a semiconductor substrate, a tunneling layer, a floating gate electrode, a dielectric layer, and a control gate electrode. The semiconductor substrate has an active region. The tunneling layer is over the active region of the semiconductor substrate. The floating gate electrode is over the tunneling layer. The floating gate electrode has a first portion and a second portion electrically connected to the first portion. The dielectric layer is over the floating gate electrode. The control gate electrode is over the dielectric layer. The control gate electrode has a first portion interposed between the first and second portions of the floating gate electrode.
    Type: Grant
    Filed: June 10, 2022
    Date of Patent: November 28, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Chu Lin, Chi-Chung Jen, Yen-Di Wang, Jia-Yang Ko, Men-Hsi Tsai