Abstract: A power strip includes a power plug and an outlet connected to the power plug through a power cord. The power plug has a plugging face and at least one power pin disposed on the plugging face. The power plug includes a first thermal cut-off device, which has a first thermal sensing pin exposed on the plugging face. The outlet has at least one set of apertures. The first thermal cut-off device is in electrically connection with a power output wire of the power plug. The first thermal cut-off device cuts off the power transmission between the power plug and the outlet when the temperature of the plugging face exceeds a first determined temperature.

Abstract: A power strip includes a power plug and an outlet connected to the power plug through a power cord. The power plug has a plugging face and at least one power pin disposed on the plugging face. The power plug includes a first thermal cut-off device, which has a first thermal sensing pin exposed on the plugging face. The outlet has at least one set of apertures. The first thermal cut-off device is in electrically connection with a power output wire of the power plug. The first thermal cut-off device cuts off the power transmission between the power plug and the outlet when the temperature of the plugging face exceeds a first determined temperature.

Abstract: A wall socket includes a main body and a socket panel. The main body includes a socket portion. The socket portion includes an AC output area and a DC output area. The DC output area is disposed with at least two DC output sockets. The AC output area is disposed with a two-hole socket and a three-hole socket. The socket panel is disposed on the body and has an opening to expose the socket portion. The AC output area and the DC output area are arranged horizontally side by side. The two-hole socket is disposed between the DC output sockets and the three-hole socket.

Abstract: A method includes forming a gate stack over a semiconductor substrate, and forming a first silicon germanium (SiGe) region in the semiconductor substrate and adjacent the gate stack. The first SiGe region has a first atomic percentage of germanium to germanium and silicon. A second SiGe region is formed over the first SiGe region. The second SiGe region has a second atomic percentage of germanium to germanium and silicon. The second atomic percentage is lower than the first atomic percentage, wherein the first and the second SiGe regions form a source/drain stressor of a metal-oxide-semiconductor (MOS) device.

Abstract: A method includes forming a gate stack over a semiconductor substrate, and forming a first silicon germanium (SiGe) region in the semiconductor substrate and adjacent the gate stack. The first SiGe region has a first atomic percentage of germanium to germanium and silicon. A second SiGe region is formed over the first SiGe region. The second SiGe region has a second atomic percentage of germanium to germanium and silicon. The second atomic percentage is lower than the first atomic percentage, wherein the first and the second SiGe regions form a source/drain stressor of a metal-oxide-semiconductor (MOS) device.

Abstract: A semiconductor structure and methods for forming the same are provided. The semiconductor structure includes a semiconductor substrate; a gate stack on the semiconductor substrate; a SiGe region in the semiconductor substrate and adjacent the gate stack, wherein the SiGe region has a first atomic percentage of germanium to germanium and silicon; and a silicide region over the SiGe region. The silicide region has a second atomic percentage of germanium to germanium and silicon. The second atomic percentage is substantially lower than the first atomic percentage.

Abstract: The high efficiency light emitting diode apparatus mainly comprises a connector, a heat dissipating body, a light generator, a central venting portion, and a transparent casing. This connector has a flow guider, a flow chamber and a vent. The light generator contains several LEDs. The heat dissipating body includes an inner passage and an outer passage. The central venting portion has a central channel. An inner flow path and an outer flow path are formed. So, the heat dissipating effect of the flow paths is excellent. The structure forming two flow paths can enhance the heat dissipating effect. The auxiliary element can strengthen the overall illuminating effect. Plus, the auxiliary element can make the light more uniformly.

Abstract: The high efficiency light emitting diode apparatus mainly comprises a connector, a heat dissipating body, a light generator, a central venting portion, and a transparent casing. This connector has a flow guider, a flow chamber and a vent. The light generator contains several LEDs. The heat dissipating body includes an inner passage and an outer passage. The central venting portion has a central channel. An inner flow path and an outer flow path are formed. So, the heat dissipating effect of the flow paths is excellent. The structure forming two flow paths can enhance the heat dissipating effect. The auxiliary element can strengthen the overall illuminating effect. Plus, the auxiliary element can make the light more uniformly.

Abstract: A semiconductor structure and methods for forming the same are provided. The semiconductor structure includes a semiconductor substrate; a gate stack on the semiconductor substrate; a SiGe region in the semiconductor substrate and adjacent the gate stack, wherein the SiGe region has a first atomic percentage of germanium to germanium and silicon; and a silicide region over the SiGe region. The silicide region has a second atomic percentage of germanium to germanium and silicon. The second atomic percentage is substantially lower than the first atomic percentage.

Abstract: A lamp having a planar light-emitting source includes a light-guiding structure, a light-emitting portion, and a shading supporting seat. The point-shaped lighting units of the light-emitting portion emit the point-shaped light beams toward the side plane of the light-guiding structure. Then, these beams enter the light-guiding structure. After turning approximately 90 degrees, a uniformly distributed planar light generated from the light-emitting plane of the light-guiding structure. So, a planar light source is obtained. In this invention, it has a planar light-emitting function with better lighting efficiency. The planar lighting is evenly distributed without shadow. Its energy consumption and heat generation are low. The product's life is prolonged. Its volume is small and it is portable.

Abstract: A device for cleaning a pad conditioner that comprises a cleaning agent supply for providing a cleaning agent for cleaning a pad conditioner including a conditioning surface, a pad including an abrasive surface, and a pump rotating the pad with respect to the pad conditioner for rubbing the abrasive surface of the pad against the conditioning surface of the pad conditioner.

Abstract: A system for monitoring oxidant concentration in a chemical mechanical polishing process, including a spectrometer and a central controller. The spectrometer is coupled to a conduit for supplying slurry between a slurry supply tub and a polishing table. The spectrometer is used to detect the oxidant concentration of the slurry. The central controller is coupled to the spectrometer, the slurry supply tub and the polishing table. The central controller is used to adjust the composition of the slurry in the slurry supply tub and the polishing condition of the polishing table according to the oxidant concentration of the slurry obtained from a signal transmitted by the spectrometer.

Abstract: The present invention relates to an improvement for a light guide structure for light guide plate so as to resolve the problems of illumination and degree of uniformity of the conventional light guide plate. The light guide plate of the present invention has line-shaped passages which are located in parallel with the direction of light from the light emitting diodes. The depth of the passages becomes deeper gradually from one end to the other, wherein the source of light is located close to the shallow end, thereby the light from the light emitting diodes is transmitted to the remote areas that are located far from the source of light. The present invention increases the total illumination and the degree of uniformity, and the efficiency of the light emitting diode is also increased.

Abstract: A conditioner for conditioning the polishing pad of a chemical-mechanical polishing station. The conditioner includes a conditioning disk having an input surface and an output surface, a tube with one end attached to the input surface of the conditioning disk, a high-pressure fluid supplier connected to the other end of the tube and a plurality of nozzles positioned on the output surface of the conditioning disk.

Abstract: The present invention relates to an improvement for a leads the light chart shape of a leads the light board so as to resolve the problems of illumination and degree of uniformity of the conventional leads the light boards. The leads the light board of the present invention has line-shaped passages which are located in parallel with the direction of light from the light emitting diodes. The depth of the passages becomes deeper gradually from one end to the other, wherein the source of light is located close to the shallow end, thereby the light from the light emitting diodes is transmitted to the remote areas that are located far from the source of light. The present invention increases the total illumination and the degree of uniformity, and the efficiency of the light emitting diode is also increased.

Abstract: A wafer carrier structure for a chemical-mechanical polishing device. The wafer carrier structure includes a holder and a slurry supply pipeline. The slurry supply pipeline is attached to the side of the holder such that a portion of the supply pipeline near the outlet end is either parallel or perpendicular to the sidewall of the holder.

Abstract: Manufacturing method for bonded electroforming metallic mold, including steps of: 1. preparation of metallic material 2. preparation of electroforming metallic plate and plastic mold core and electroforming substrate; 3. preparation of power supply; 4. forming of electroforming deposited film; and 5. final-shaping. In order to significantly shorten the electroforming time and firmly connect with the steel material of the mold, the steel material of the mold and the electroforming article are simultaneously electrically connected to the cathodes of power supplies. So, the electroforming metal is simultaneously deposited on both sides to quickly achieve the desired thickness of the electroforming metallic plate. By the metal-to-metal bonding force, the electroforming metallic plate and the steel material of the mold are firmly connected with each other. Also, the electroforming metallic plate keeps having the original cast pattern and is tightly combined with the steel material of the mold.

Abstract: Manufacturing method for bonded electroforming metallic mold, including steps of: 1. preparation of metallic material 2. preparation of electroforming metallic plate and plastic mold core and electroforming substrate; 3. preparation of power supply; 4. forming of electroforming deposited film; and 5. final-shaping. In order to significantly shorten the electroforming time and firmly connect with the steel material of the mold, the steel material of the mold and the electroforming article are simultaneously electrically connected to the cathodes of power supplies. So, the electroforming metal is simultaneously deposited on both sides to quickly achieve the desired thickness of the electroforming metallic plate. By the metal-to-metal bonding force, the electroforming metallic plate and the steel material of the mold are firmly connected with each other. Also, the electroforming metallic plate keeps having the original cast pattern and is tightly combined with the steel material of the mold.