Abstract: A device includes a semiconductor substrate; a first word line over the semiconductor substrate, the first word line providing a first gate electrode for a first transistor; and a second word line over the first word line. The second word line is insulated from the first word line by a first dielectric material, and the second word line providing a second gate electrode for a second transistor over the first transistor. The device further including a source line intersecting the first word line and the second word line; a bit line intersecting the first word line and the second word line; a memory film between the first word line and the source line; and a first semiconductor material between the memory film and the source line.

Abstract: A method for forming a semiconductor device structure is provided. The method includes removing a portion of a dielectric layer to form a trench in the dielectric layer. The method includes forming a barrier layer in the trench. The method includes forming a seed layer in the trench and over the barrier layer. The seed layer is doped with manganese. The method includes annealing the seed layer in a first process gas including a first hydrogen gas. A volume ratio of the first hydrogen gas to the first process gas ranges from about 50% to about 100%, and the manganese diffuses from the seed layer to the barrier layer during the annealing of the seed layer in the first process gas.

Abstract: A method of manufacturing an interconnect structure includes forming an opening through a dielectric layer. The opening exposes a top surface of a first conductive feature. The method further includes forming a barrier layer on sidewalls of the opening, passivating the exposed top surface of the first conductive feature with a treatment process, forming a liner layer over the barrier layer, and filling the opening with a conductive material.

Abstract: A ferroelectric device structure includes an array of ferroelectric capacitors overlying a substrate, first metal interconnect structures electrically connecting each of first electrodes of the array of ferroelectric capacitors to a first metal pad embedded in a dielectric material layer, and second metal interconnect structures electrically connecting each of the second electrodes of the array of ferroelectric capacitors to a second metal pad embedded in the dielectric material layer. The second metal pad may be vertically spaced from the substrate by a same vertical separation distance as the first metal pad is from the substrate. First metal lines laterally extending along a first horizontal direction may electrically connect the first electrodes to the first metal pad, and second metal lines laterally extending along the first horizontal direction may electrically connect each of the second electrodes to the second metal pad.

Abstract: A method of air pollution filtration in a vehicle is disclosed. A plurality of purification devices are provided to detect and transmit an inside-device gas detection datum, respectively, for intelligently selecting and controlling the activation of filtering the air pollution in the inner space of the vehicle. An in-car gas exchange system and a connection device are provided. The connection device receives and compares the respective inside-device gas detection datum, and selectively transmits a control instruction to drive the in-car gas exchange system and the purification devices. The movement of the air pollution is accelerated by the gas convention of the in-car gas exchange system, so that the air pollution is directionally moved toward the corresponding one of the purification devices adjacent to the air pollution for filtration. The air pollution in the inner space of the vehicle is filtered rapidly, so as to provide clean, safe and breathable air.

Abstract: A gas detection and purification device can be placed in an in-car space and includes a housing, a purification module, a gas-guiding unit, and a gas detection module. The housing has a gas inlet and a gas outlet. A gas channel is between the gas inlet and the gas outlet. The purification module is disposed in the gas channel to filter the gas guided into the gas channel. The gas-guiding unit is disposed in the gas channel and at one side of the purification module. The gas-guiding unit guides the gas into the device from the gas inlet, guides the gas to pass through the purification module for performing filtering and purifying, and discharges the gas out from the gas outlet. The gas detection module is disposed in the gas channel to detect the gas guided into the housing to obtain gas detection data.

Abstract: A heat-dissipating component for a mobile device includes a case body, a micro pump, and a heat dissipation tube plate. The case body has a vent hole and a positioning accommodation trough. The bottom of the positioning accommodation trough is in communication with the vent hole. The micro pump is disposed in the positioning accommodation trough and corresponds to the vent hole The heat dissipation tube plate has cooling fluid inside. One end of the heat dissipation tube plate is fixed on the positioning accommodation trough and contacts a heating element of the mobile device. The gas transmitted by the micro pump forms gas flow so as to perform heat exchange with heat absorbed by the heat dissipation tube plate, and the gas flow is discharged out through the vent hole.

Abstract: In an embodiment, a method includes forming a multi-layer stack including alternating layers of an isolation material and a semiconductor material, patterning the multi-layer stack to form a first channel structure in a first region of the multi-layer stack, where the first channel structure includes the semiconductor material, depositing a memory film layer over the first channel structure, etching a first trench extending through a second region of the multi-layer stack to form a first dummy bit line and a first dummy source line in the second region, where the first dummy bit line and first dummy source line each include the semiconductor material, and replacing the semiconductor material of the first dummy bit line and the first dummy source line with a conductive material to form a first bit line and a first source line.

Abstract: A memory device includes a first electrode, a first support layer, a dielectric layer and a second electrode. The first electrode is disposed on a substrate and extending upwards. The first support layer laterally supports an upper portion of a sidewall of the first electrode, where the first support layer has a slim portion. The dielectric layer is disposed on the first electrode and the first support layer. The second electrode is disposed on the dielectric layer. In addition, a method of fabricating the memory device is provided.

Abstract: A blood pressure measurement module is provided and includes a base, a valve plate, a top cover, a micro pump, a driving circuit board and a pressure sensor. The valve plate is disposed between the base and the top cover. The micro pump is disposed within the base. The pressure sensor is disposed on the driving circuit board. An air inlet groove and the pressure sensor are connected to an airbag. The micro pump is actuated to make the airbag be inflated and oppress the skin of a user. The pressure sensor detects the pressure change within the airbag to measure the blood pressure of the user.

Abstract: A method of manufacturing an interconnect structure includes forming an opening through a dielectric layer. The opening exposes a top surface of a first conductive feature. The method further includes forming a barrier layer on sidewalls of the opening, passivating the exposed top surface of the first conductive feature with a treatment process, forming a liner layer over the barrier layer, and filling the opening with a conductive material. The liner layer may include ruthenium.

Abstract: A blood pressure measurement module includes a top cover, a micro pump, a driving circuit board, and a pressure sensor. The top cover has a gas inlet hole, an accommodation trough, and an outlet channel. An inner wall of the accommodation trough is recessed to form a gas collection chamber in communication with the gas inlet hole, and the outlet channel is connected to a gas bag. The pressure sensor is electrically connected to the driving circuit board. The driving circuit board covers the accommodation trough of the top cover. The operation of the micro pump is controlled by the driving circuit board. The gas is continuously guided to the outlet channel and is converged at the gas bag by the micro pump. When the pressure of the gas in the gas bag measured by the pressure sensor reaches a valve value, the micro pump stops its operation.

Abstract: The present invention is directed to nanoparticles comprising: (a) an inner core comprising oligomeric (?)-epigallocatechin gallate (OEGCG), (b) an outer core comprising a polyethylene glycol-epigallocatechin gallate conjugate (PEG-EGCG), and (c) a protein molecule of a drug substance encapsulated in the inner core; wherein at least 70% of the nanoparticles have a diameter between 50-300 nm. The present invention also provides a process for preparing the nanoparticles. The present invention further provides a method of treating cancer by administering to a subject in need thereof the nanoparticles of the present invention, in an amount effective to treat cancer.

Abstract: Some implementations described herein provide a method that includes loading, from a load port and into a first buffer of a multiple-buffer overhead hoist transport (OHT) vehicle, a first transport carrier storing one or more processed wafers. The method includes unloading to the load port, while the first buffer retains the first transport carrier, and from a second buffer of the multiple-buffer OHT vehicle, a second transport carrier storing one or more wafers for processing. In other implementations, the method includes loading, into a first buffer of the multiple-buffer OHT vehicle, a first transport carrier storing one or more wafers for processing, while a semiconductor processing tool, associated with a load port, is processing one or more wafers associated with a second transport carrier. The method includes positioning the multiple-buffer OHT vehicle above the load port while the multiple-buffer OHT vehicle retains the first transport carrier in the first buffer.

Abstract: An external gas detecting device is provided. The external gas detecting device includes a casing, a gas detection module and an external connector. The gas detection module is disposed in the casing and detects a gas transported into the casing to generate a gas information. The external connector is connected to and disposed on the casing. The external connector is used to be connected to an external power supply so as to enable the gas detection module, and is used to transmit the gas information so as to achieve the outward transmission of the gas information.

Abstract: A ferroelectric device structure includes an array of ferroelectric capacitors overlying a substrate, first metal interconnect structures electrically connecting each of first electrodes of the array of ferroelectric capacitors to a first metal pad embedded in a dielectric material layer, and second metal interconnect structures electrically connecting each of the second electrodes of the array of ferroelectric capacitors to a second metal pad embedded in the dielectric material layer. The second metal pad may be vertically spaced from the substrate by a same vertical separation distance as the first metal pad is from the substrate. First metal lines laterally extending along a first horizontal direction may electrically connect the first electrodes to the first metal pad, and second metal lines laterally extending along the first horizontal direction may electrically connect each of the second electrodes to the second metal pad.

Abstract: A wafer structure is disclosed and includes a chip substrate and at least one inkjet chip. The chip substrate is a silicon substrate fabricated by a semiconductor process. The inkjet chip is directly formed on the chip substrate by the semiconductor process, whereby the wafer structure is diced, and the inkjet chip is produced, to be implemented for inkjet printing. The inkjet chip includes a plurality of ink-drop generators produced by the semiconductor process and formed on the chip substrate. Each of the ink-drop generators includes a barrier layer, an ink-supply chamber and a nozzle, and the ink-supply chamber and the nozzle are integrally formed in the barrier layer.

Abstract: A driving system for driving piezoelectric pump includes one or more mechanical devices and a driving circuit system electrically connected to the at least one mechanical device. The driving circuit system includes a pump-driving unit, a linear voltage-stabilizing unit, a microcontroller unit, a current-sensing unit, and a connection unit. The microcontroller unit generates a first signal, a second signal, and a third signal, and the pump-driving unit receives these signals to drive the mechanical device. The current-sensing unit receives a fourth signal transmitted by the pump-driving unit to obtain an actuation current value of the mechanical device. The linear voltage-stabilizing unit, the current-sensing unit, and the microcontroller unit are coupled to each other through a fifth signal and a sixth signal. The connection unit and the microcontroller unit are coupled to each other through a reset signal, a seventh signal, and an eighth signal provided by the microcontroller unit.

Abstract: A method for intelligently preventing and handling indoor air pollution is adapted to be implemented in an indoor space and includes providing a cloud processing device to receive and intelligently compare an outdoor gas detection data, an indoor gas detection data, and device gas detection data with each other. Then, the cloud processing device remotely transmits a control signal to the communication relay station and further to an indoor gas exchange system, so that the indoor gas exchange system is capable of intelligently enabling the gas processing device and controlling the operation time of the gas processing device for exchanging a polluted gas in the indoor space with the outdoor gas. Moreover, the gas exchanger can perform purification for the polluted gas at the location of the gas exchanger, thereby allowing the polluted gas in the indoor space to be exchanged into a clean, safe, and breathable gas.

Abstract: A wafer structure is disclosed and includes a chip substrate and a plurality of inkjet chips. The chip substrate is a silicon substrate which is fabricated by a semiconductor process. The plurality of inkjet chips include at least one first inkjet chip and at least one second inkjet chip. The plurality of inkjet chips are directly formed on the chip substrate by the semiconductor process, respectively, and diced into the at least one first inkjet chip and the at least one second inkjet chip, to be implemented for inkjet printing. Each of the first inkjet chip and the second inkjet chip includes a plurality of ink-drop generators produced by the semiconductor process and formed on the chip substrate. Each ink-drop generator includes a barrier layer, an ink-supply chamber and a nozzle. The ink-supply chamber and the nozzle are integrally formed in the barrier layer.