Abstract: An organic light-emitting diode (OLED) and a white OLED are provided. The OLED sequentially includes an anode, an emission layer, an electron transport layer, and a cathode. The emission layer includes a triplet-triplet annihilation (TTA) material and a donor material. The doubled triplet energy of the TTA material is greater than the singlet energy of the TTA material. The donor material is disposed between the anode and the TTA material and has a second singlet energy and a second triplet energy. A sensitizer is doped in the emission layer or formed between the TTA material and the donor material when a voltage is applied. The sensitizer has a third singlet energy and a third triplet energy. The third singlet energy and the third triplet energy are both smaller than the second singlet energy.

Abstract: An organic light-emitting diode comprises a first electrode layer, a second electrode layer, and an organic luminescent unit disposed between the first electrode layer and the second electrode layer.

Abstract: A continuous process for preparing a polyester shrinkable film includes: pumping an amorphous PET-based polyester melt having a melt viscosity ?1 directly from a polymerization reactor into a first cooling zone; cooling the polyester melt to increase the melt viscosity thereof to a melt viscosity ?2 such that a difference between ?2 and ?1 ranges from 1500 poise to 3500 poise; feeding the polyester melt into a second cooling zone; cooling the polyester melt to increase the melt viscosity thereof to a melt viscosity ?3 ranging from 5000 poise to 12000 poise such that a difference between ?3 and ?2 ranges from 1000 poise to 5500 poise; and pumping the polyester melt from the second cooling zone into a zone for film-forming treatment.

Abstract: A benzodiazaborole derivative is shown in General Formula (1), wherein R1 is selected from the group consisting of hydrogen atom, General Formula (2), General Formula (3) and General Formula (4), R2 is selected from the group consisting of hydrogen atom, General Formula (3) and General Formula (4), R1 and R2 are different and at least one of them is a hydrogen atom, R3 is General Formula (4) when R2 is General Formula (4) and R3 is a hydrogen atom when R2 is a hydrogen atom or General Formula (3). Wherein R4 to R19 are independently selected from the group consisting of hydrogen atom, fluorine atom, cyano group, alkyl group, cycloalkyl group, alkoxy group, haloalkyl group, thioalkyl group, silyl group and alkenyl group.

Abstract: A continuous process for preparing a polyester shrinkable film includes: pumping an amorphous PET-based polyester melt having a melt viscosity ?1 directly from a polymerization reactor into a first cooling zone; cooling the polyester melt to increase the melt viscosity thereof to a melt viscosity ?2 such that a difference between ?2 and ?1 ranges from 1500 poise to 3500 poise; feeding the polyester melt into a second cooling zone; cooling the polyester melt to increase the melt viscosity thereof to a melt viscosity ?3 ranging from 5000 poise to 12000 poise such that a difference between ?3 and ?2 ranges from 1000 poise to 5500 poise; and pumping the polyester melt from the second cooling zone into a zone for film-forming treatment.

Abstract: A method used in a network device for outputting data to a bus with a data bus width at each cycle includes: using a packet generating circuit for generating idle data after an end of packet for a packet at a cycle and generating a start of packet for a next packet at a different cycle; and using an inter-packet gap (IPG) generating circuit for receiving data transmitted from the packet generating circuit, dynamically writing the received data into the buffer, and inserting a gap of idle data between the end of packet and the start of packet according to the end of packet and the idle data generated by the packet generating circuit.

Abstract: An organic light-emitting diode (OLED) and a white OLED are provided. The OLED sequentially includes an anode, an emission layer, an electron transport layer, and a cathode. The emission layer includes a triplet-triplet annihilation (TTA) material and a donor material. The doubled triplet energy of the TTA material is greater than the singlet energy of the TTA material. The donor material is disposed between the anode and the TTA material and has a second singlet energy and a second triplet energy. A sensitizer is doped in the emission layer or formed between the TTA material and the donor material when a voltage is applied. The sensitizer has a third singlet energy and a third triplet energy. The third singlet energy and the third triplet energy are both smaller than the second singlet energy.

Abstract: A Carbazole-N-Benzimidazole bipolar material and organic light emitting diodes using the same is provided. The organic light emitting diodes include a substrate, a first conducting layer, a hole transporting layer, a light emitting layer, an electron transporting layer, and a second conducting layer. The first conducting layer is disposed on the substrate. The hole transporting layer is disposed on the first conducting layer. The light emitting layer having the Carbazole-N-Benzimidazole bipolar material is disposed on the hole transporting layer. The electron transporting layer is disposed on the light emitting layer. The second conducting layer is disposed on the electron transporting layer.

Abstract: The present disclosure relates to phenothiazine derivatives such as conjugates of phenothiazine compounds, as well as pharmaceutical compositions thereof. The present disclosure also relates to a method of making and the use of such compounds for treating cancer, e.g., a lung cancer, a colon cancer, breast cancer or pancreatic cancer.

Abstract: A carbazole derivative is provided.

Abstract: A communication device and associated method is provided. The communication device includes: a controller; a packet buffer, configured to store a current packet segment and a previous packet segment of an incoming packet; and a plurality of cyclic redundancy check (CRC) circuits, wherein each CRC circuit is individually fed with a portion of the current packet segment and/or a portion of the previous packet segment in a respective cycle of the incoming packet, and an initial value, wherein the plurality of CRC circuits are arranged in parallel.

Abstract: The present disclosure relates to phenothiazine derivatives such as conjugates of phenothiazine compounds, as well as pharmaceutical compositions thereof. The present disclosure also relates to a method of making and the use of such compounds for treating cancer, e.g., a lung cancer, a colon cancer, breast cancer or pancreatic cancer.

Abstract: A method used in a network device for outputting data to a bus with a data bus width at each cycle includes: using a packet generating circuit for generating idle data after an end of packet for a packet at a cycle and generating a start of packet for a next packet at a different cycle; and using an inter-packet gap (IPG) generating circuit for receiving data transmitted from the packet generating circuit, dynamically writing the received data into the buffer, and inserting a gap of idle data between the end of packet and the start of packet according to the end of packet and the idle data generated by the packet generating circuit.

Abstract: A method used in a network device for outputting data to a bus with a data bus width at each cycle includes: using a packet generator for generating idle data after an end of packet for a packet at a cycle and generating a start of packet for a next packet at a different cycle; and using an inter-packet gap (IPG) generator for receiving data transmitted from the packet generator, dynamically writing the received data into the buffer, and inserting a gap of idle data between the end of packet and the start of packet according to the end of packet and the idle data generated by the packet generator.

Abstract: A communication device and associated method is provided. The communication device includes: a controller; a packet buffer, configured to store a current packet segment and a previous packet segment of an incoming packet; and a plurality of cyclic redundancy check (CRC) circuits, wherein each CRC circuit is individually fed with a portion of the current packet segment and/or a portion of the previous packet segment in a respective cycle of the incoming packet, and an initial value, wherein the plurality of CRC circuits are arranged in parallel.

Abstract: In accordance with some embodiments, a method for forming a semiconductor device structure is provided. The method includes forming a dielectric layer on a semiconductor substrate. The dielectric layer has at least one first trench in the dielectric layer. The method also includes forming a seed layer on a sidewall and a bottom surface of the first trench. The method further includes forming a first conductive layer on the seed layer. The method includes performing a thermal treatment process to melt and transform the seed layer and the first conductive layer into a second conductive layer. The method also includes forming a third conductive layer on the second conductive layer to fill the first trench.

Abstract: Embodiments of mechanisms for forming a semiconductor device structure are provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure further includes a dielectric layer on the semiconductor substrate. The semiconductor device structure also includes at least one conductive structure embedded in the dielectric layer. A plurality of crystal grains are composed of the conductive structure, and a ratio of an average grain size of the crystal grains to a width of the conductive structure ranges from about 0.75 to about 40.

Abstract: A biphenyl derivative is provided, which is shown in formula (1): wherein X represents one of the groups shown in formula (2) to formula (5): and R11 to R15, R21 to R25, R31 to R35, R41 to R45, R51 to R55, and R61 to R65 are independently selected from one of a hydrogen atom, a fluorine atom, a cyano group, a substituted or non-substituted straight-chain or branched-chain alkyl group, a substituted or non-substituted cycloalkyl group, a substituted or non-substituted straight-chain or branched-chain alkoxy group, a substituted or non-substituted straight-chain or branched-chain thioalkyl group, and a substituted or non-substituted straight-chain or branched-chain alkenyl group.

Abstract: A carbazole derivative is provided.

Abstract: In accordance with some embodiments, a method for forming a semiconductor device structure is provided. The method includes forming a dielectric layer on a semiconductor substrate. The dielectric layer has at least one first trench in the dielectric layer. The method also includes forming a seed layer on a sidewall and a bottom surface of the first trench. The method further includes forming a first conductive layer on the seed layer. The method includes performing a thermal treatment process to melt and transform the seed layer and the first conductive layer into a second conductive layer. The method also includes forming a third conductive layer on the second conductive layer to fill the first trench.