Abstract: A method of forming a semiconductor device is disclosed. The method includes forming a plurality of isolation regions on a semiconductor substrate, forming a protective layer in a resistor region of the semiconductor substrate, after forming the protective layer, etching a gate dielectric layer to form first and second gate dielectric layers of a transistor in a transistor region of the semiconductor substrate, removing the protective layer, forming first and second dummy gate stacks over the first and second gate dielectric layers, respectively, forming a resistor in the resistor region, forming third and fourth dummy gate stacks over the resistor, and replacing each of the first, second, third, and fourth dummy gate stacks with a conductive material.

Abstract: A semiconductor package includes a photonic integrated circuit (PIC) die having a photonic layer, and an electronic integrated circuit (EIC) die bonded to the PIC die. The EIC die includes an optical region that allows the transmission of optical signals through the optical region towards the photonic layer, and a peripheral region outside of the optical region. The optical region includes optical concave/convex structures, a protection film and optically transparent material layers. The optical concave/convex structures are formed in the semiconductor structure. The protection film is conformally disposed over the optical concave/convex structures. The optically transparent material layers are disposed over the protection film and filling up the optical region. The peripheral region includes first bonding pads bonded to the photonic integrated circuit die, and via structures connected to the first bonding pads, wherein the protection film is laterally surrounding sidewalls of the via structures.

Abstract: In some embodiments, an integrated chip is provided. The integrated chip includes a source region and a drain region disposed in a substrate. A gate is disposed over the substrate and between the source region and the drain region. A silicide structure is disposed over the drain region. A first silicide blocking segment and a second silicide blocking segment are disposed directly over the drain region. The silicide structure continuously extends over the drain region from a first sidewall contacting the first silicide blocking segment to a second sidewall contacting the second silicide blocking segment, in a cross-sectional view.

Abstract: This disclosure provides systems, methods, and devices for image processing that support enhanced white balancing operations. In a first aspect, a method of image processing includes receiving first image data obtained at a first aperture; determining a first output image frame based on the first image data by applying a first white balancing to at least a portion of the first image data; receiving second image data obtained at a second aperture; and determining a second output image frame based on the second image data by applying a second white balancing based on the first aperture and the second aperture to at least a portion of the second image data. The second white balancing may be based on a first compensation factor based on the first aperture and the second aperture used to adjust the first white balancing. Other aspects and features are also claimed and described.

Abstract: A method, computer system, and a computer program product for smart SDN is provided. The present invention may include recording and clustering a pod's behavior to generate a behavior transition model for the pod. The present invention may include watching a behavior of the pod and comparing the behavior to the generated behavior transition model. The present invention may include triggering a network policy change based on determining that the behavior of the pod is a misbehavior.

Abstract: A field effect transistor includes a substrate having a transistor forming region thereon; an insulating layer on the substrate; a first graphene layer on the insulating layer within the transistor forming region; an etch stop layer on the first graphene layer within the transistor forming region; a first inter-layer dielectric layer on the etch stop layer; a gate trench recessed into the first inter-layer dielectric layer and the etch stop layer within the transistor forming region; a second graphene layer on interior surface of the gate trench; a gate dielectric layer on the second graphene layer and on the first inter-layer dielectric layer; and a gate electrode on the gate dielectric layer within the gate trench.

Abstract: A memory device and a manufacturing method thereof is described. The memory device includes a transistor structure over a substrate and a ferroelectric capacitor structure electrically connected with the transistor structure. The ferroelectric capacitor structure includes a top electrode layer, a bottom electrode layer and a ferroelectric stack sandwiched there-between. The ferroelectric stack includes a first ferroelectric layer, a first stabilizing layer, and one of a second ferroelectric layer or a second stabilizing layer. Materials of the first stabilizing layer and a second stabilizing layer include a metal oxide material.

Abstract: Method of manufacturing semiconductor device includes forming photoresist layer over substrate. Forming photoresist layer includes combining first precursor and second precursor in vapor state to form photoresist material, wherein first precursor is organometallic having formula: MaRbXc, where M at least one of Sn, Bi, Sb, In, Te, Ti, Zr, Hf, V, Co, Mo, W, Al, Ga, Si, Ge, P, As, Y, La, Ce, Lu; R is substituted or unsubstituted alkyl, alkenyl, carboxylate group; X is halide or sulfonate group; and 1?a?2, b?1, c?1, and b+c?5. Second precursor is at least one of an amine, a borane, a phosphine. Forming photoresist layer includes depositing photoresist material over the substrate. The photoresist layer is selectively exposed to actinic radiation to form latent pattern, and the latent pattern is developed by applying developer to selectively exposed photoresist layer to form pattern.

Abstract: A method of manufacturing semiconductor device includes forming a multilayer photoresist structure including a metal-containing photoresist over a substrate. The multilayer photoresist structure includes two or more metal-containing photoresist layers having different physical parameters. The metal-containing photoresist is a reaction product of a first precursor and a second precursor, and each layer of the multilayer photoresist structure is formed using different photoresist layer formation parameters. The different photoresist layer formation parameters are one or more selected from the group consisting of the first precursor, an amount of the first precursor, the second precursor, an amount of the second precursor, a length of time each photoresist layer formation operation, and heating conditions of the photoresist layers.

Abstract: An installation tool for a self-tapping rivet fastener contains: a body, a movable sleeve, a handle, a single-direction thrust bearing, a switcher, a drive rod, a transmission shaft, a cap, a locking element, and a screw nut. The body includes multiple ribs, two protrusions, two slots, a circular orifice, a stepped fringe, a positioning orifice, a threaded section, and a connection groove. The movable sleeve moves on the body. The handle includes a hollowly circular fitting portion. The switcher includes a coupling portion, a connection flange, a defining hole, and a fitting hole. The drive rod includes a shank, a positioning fringe, and a fixing portion. The transmission shaft includes a threaded orifice, a connecting portion, and a shoulder. The cap is hollow. The locking element includes a threaded extension, a driving portion, and a threaded aperture. The screw nut includes a screwing section and a receiving orifice.

Abstract: A method for checking standard cell spacing in a design includes providing a first standard cell. A cell environment of the first standard cell is determined and a first feasible distance between a first boundary of the standard cell and a boundary of a first adjacent cell based on the cell environment is determined. A second feasible distance between a second boundary of the standard cell and a boundary of a second adjacent cell based on the cell environment is determined. A feasible spacing between the first standard cell and a second standard cell is provided, and the feasible spacing is evaluated based on the first feasible distance, the second feasible distance and a cell pitch of the first standard cell. An integrated circuit is fabricated that includes the first standard cell in response on the evaluating.

Abstract: A power converter and a power conversion method are provided and capable of bus capacitor voltage balance based on inherent inductor components of the power converter. Compared with the conventional approach that adds a balance circuit, the power converter and the power conversion method can reduce a size of overall circuit and improve a power density. In addition, two relays of the power converter are configured to switch switching states such that two inductors store or release energy, thereby transmitting electrical energy between two bus capacitors and two load capacitors. The power converter and the power conversion method are able to realize energy balance and hybrid power supply and satisfy various load requirements.

Abstract: Systems and methods are provided for a clock generator is configured to generate N clock signals evenly spaced by phase. A clock generator includes a poly phase filter configured to utilize a differential clock signal to generate N intermediate signals, the intermediate signals being spaced approximately 360/N degrees apart in phase. A phase error corrector is configured to receive the intermediate signals and to generate N clock output signals, where a phase error is a measure of a difference in phase between consecutive ones of the clock output signals from 360/N degrees, the phase error corrector being configured to reduce phase error among the clock output signals based on a feedback signal. A phase error detection circuit is configured to receive the clock output signals and to generate the feedback signal based on detected phase errors among the clock output signals.

Abstract: A mechanism for fine adjusting an angle of a semiconductor wafer fixture includes a fixture for a semiconductor wafer, a turntable, a rotating motor and a base. The top surface of the fixture is provided with a positioning portion for accommodating a semiconductor wafer, the turntable is detachably installed under the fixture, the rotating motor connects the bottom of the turntable and is installed on the base. An assembly for fine adjusting an angle of a semiconductor wafer fixture includes the above mechanism and several air bearings installed on the circumferential area of the base to support the turntable so as to fine adjust an angle of the turntable and the fixture.

Abstract: In various examples, sensor data representative of an image of a field of view of a vehicle sensor may be received and the sensor data may be applied to a machine learning model. The machine learning model may compute a segmentation mask representative of portions of the image corresponding to lane markings of the driving surface of the vehicle. Analysis of the segmentation mask may be performed to determine lane marking types, and lane boundaries may be generated by performing curve fitting on the lane markings corresponding to each of the lane marking types. The data representative of the lane boundaries may then be sent to a component of the vehicle for use in navigating the vehicle through the driving surface.

Abstract: A socket of a testing tool is configured to provide testing signals. A device-under-test (DUT) board is configured to provide electrical routing. An integrated circuit (IC) die is disposed between the socket and the DUT board. The testing signals are electrically routed to the IC die through the DUT board. The IC die includes a substrate in which plurality of transistors is formed. A first structure contains a plurality of first metallization components. A second structure contains a plurality of second metallization components. The first structure is disposed over a first side of the substrate. The second structure is disposed over a second side of the substrate opposite the first side. A trench extends through the DUT board and extends partially into the IC die from the second side. A signal detection tool is configured to detect electrical or optical signals generated by the IC die.

Abstract: A package structure includes: 1) a circuit substrate; 2) a first semiconductor device disposed on the circuit substrate; 3) a first insulation layer covering a sidewall of the first semiconductor device; 4) a second insulation layer covering the first insulation layer; and 5) a third insulation layer disposed on the circuit substrate and in contact with the second insulation layer.

Abstract: The present invention discloses a data access interface unit comprising: a physical storage device controller for receiving a first control signal from a first storage virtualization controller, and accordingly determining the first storage virtualization controller as the primary controller, and generating a first selection signal; a selector for receiving the first selection signal, and accordingly selecting data and signals from the first storage virtualization controller; and a clock generation circuit for providing a dedicated clock signal to the physical storage device, where when the physical storage device controller receives a re-set signal from a second storage virtualization controller, the physical storage device controller determines the second storage virtualization controller as the new primary controller, and accordingly generates a second selection signal so as to control the selector to select data and signals from the second storage virtualization controller.

Abstract: A method for forming a patterned mask layer is provided. The method includes forming a layer over a substrate. The method includes forming a first strip structure and a second strip structure over the layer. The method includes forming a spacer layer over the first strip structure, the second strip structure, and the layer. The method includes forming a third strip structure and a fourth strip structure between the first strip part and the second strip part. The connecting part is between the third strip structure and the fourth strip structure. The method includes removing the spacer layer. The first strip structure, the second strip structure, the third strip structure, and the fourth strip structure together form a patterned mask layer.