Patents by Inventor Chi Hoon Jun
Chi Hoon Jun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20160260653Abstract: Provided is a semiconductor device. The semiconductor device includes a substrate including a cantilever configured to generate a flow of cooling media through dynamic movement, an active area on the substrate which an electronic device is provided on, an insulation layer disposed to be spaced apart from the active area on the substrate, a lower electrode on the insulation layer, a piezoelectric film on the lower electrode, and an upper electrode on the piezoelectric film.Type: ApplicationFiled: October 1, 2015Publication date: September 8, 2016Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Chi Hoon JUN, Jeho NA, Dong Yun JUNG, Sang Choon KO, Eun Soo NAM, Hyung Seok LEE
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Publication number: 20160225631Abstract: Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes: an active region provided on a substrate; an inlet channel formed as a single cavity buried in one side of the substrate; an outlet channel formed as a single cavity buried in the other side of the substrate; a micro channel array comprising a plurality of micro channels, wherein the plurality of micro channels are formed as a plurality of cavities buried in the substrate, and one end of the micro channel array is connected to a side of the inlet channel and the other end of the micro channel array is connected to a side of the outlet channel; and a micro heat sink array separating the micro channels from one another.Type: ApplicationFiled: April 8, 2016Publication date: August 4, 2016Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Chi Hoon JUN, Sang Choon KO, Seok-Hwan MOON, Woojin CHANG, Sung-Bum BAE, Young Rak PARK, Je Ho NA, Jae Kyoung MUN, Eun Soo NAM
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Patent number: 9337121Abstract: Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes: an active region provided on a substrate; an inlet channel formed as a single cavity buried in one side of the substrate; an outlet channel formed as a single cavity buried in the other side of the substrate; a micro channel array comprising a plurality of micro channels, wherein the plurality of micro channels are formed as a plurality of cavities buried in the substrate, and one end of the micro channel array is connected to a side of the inlet channel and the other end of the micro channel array is connected to a side of the outlet channel; and a micro heat sink array separating the micro channels from one another.Type: GrantFiled: July 7, 2014Date of Patent: May 10, 2016Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Chi Hoon Jun, Sang Choon Ko, Seok-Hwan Moon, Woojin Chang, Sung-Bum Bae, Young Rak Park, Je Ho Na, Jae Kyoung Mun, Eun Soo Nam
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Patent number: 9293689Abstract: A piezoelectric micro energy harvester and manufacturing method thereof, the method including: forming an insulation film on a substrate; patterning the insulation film and forming an electrode pad pattern, a center electrode pattern, and a side electrode pattern; forming an open cavity at an inside of the substrate for suspension of the center electrode pattern and the side electrode pattern; disposing a conductive film on the electrode pad pattern, the center electrode pattern, and the side electrode pattern and forming electrode pads, a center electrode, and a side electrode; and forming a piezoelectric film so as to cover a space between the center electrode and the side electrode and upper surfaces of the center electrode and the side electrode.Type: GrantFiled: October 29, 2013Date of Patent: March 22, 2016Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Chi Hoon Jun, Sang Choon Ko, Jong Tae Moon
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Patent number: 9159583Abstract: Provided is a method of manufacturing a nitride semiconductor device. The method includes forming a plurality of electrodes on a growth substrate on which first and second nitride semiconductor layers are sequentially stacked, forming upper metal layers on the plurality of electrodes respectively, removing the growth substrate to expose a lower surface of the first nitride semiconductor layer, and forming a third nitride semiconductor layer and a lower metal layer sequentially on the exposed lower surface of the first nitride semiconductor layer.Type: GrantFiled: June 20, 2014Date of Patent: October 13, 2015Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Sang Choon Ko, Jae Kyoung Mun, Woojin Chang, Sung-Bum Bae, Young Rak Park, Chi Hoon Jun, Seok-Hwan Moon, Woo-Young Jang, Jeong-Jin Kim, Hyungyu Jang, Je Ho Na, Eun Soo Nam
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Publication number: 20150194363Abstract: Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes: an active region provided on a substrate; an inlet channel formed as a single cavity buried in one side of the substrate; an outlet channel formed as a single cavity buried in the other side of the substrate; a micro channel array comprising a plurality of micro channels, wherein the plurality of micro channels are formed as a plurality of cavities buried in the substrate, and one end of the micro channel array is connected to a side of the inlet channel and the other end of the micro channel array is connected to a side of the outlet channel; and a micro heat sink array separating the micro channels from one another.Type: ApplicationFiled: July 7, 2014Publication date: July 9, 2015Applicant: Electronics and Telecommunications Research InstituteInventors: Chi Hoon JUN, Sang Choon KO, Seok-Hwan MOON, Woojin CHANG, Sung-Bum BAE, Young Rak PARK, Je Ho NA, Jae Kyoung MUN, Eun Soo NAM
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Publication number: 20150187599Abstract: Provided is a method of manufacturing a nitride semiconductor device. The method includes forming a plurality of electrodes on a growth substrate on which first and second nitride semiconductor layers are sequentially stacked, forming upper metal layers on the plurality of electrodes respectively, removing the growth substrate to expose a lower surface of the first nitride semiconductor layer, and forming a third nitride semiconductor layer and a lower metal layer sequentially on the exposed lower surface of the first nitride semiconductor layer.Type: ApplicationFiled: June 20, 2014Publication date: July 2, 2015Applicant: Electronics and Telecommunications Research InstituteInventors: Sang Choon KO, Jae Kyoung MUN, Woojin CHANG, Sung-Bum BAE, Young Rak PARK, Chi Hoon JUN, Seok-Hwan MOON, Woo-Young JANG, Jeong-Jin KIM, Hyungyu JANG, Je Ho NA, Eun Soo NAM
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Patent number: 9024511Abstract: The present inventive concept discloses an impact-type piezoelectric micro power generator. The impact-type piezoelectric micro power generator may comprise a base having a cavity and at least one stop area adjacent to the cavity; a frame fastened to the base; a vibrating body comprising a plurality of first vibrating beams extended from the frame toward a top of the cavity, an impact beam connected to between first tips of the plurality of first vibrating beams and extended onto the stop area, and a second vibrating beam extended from the impact beam to between the plurality of first vibrating beams, the second vibrating beam having a second tip; and a piezoelectric device disposed on one of a top and a bottom of the second vibrating beam and the impact beam, the piezoelectric device generating electric power according to impacts of the vibrating body to the stop area and bending of the impact beam and the second vibrating beam.Type: GrantFiled: April 17, 2013Date of Patent: May 5, 2015Assignee: Electronics and Telecommunications Research InstituteInventors: Chi Hoon Jun, Sang Choon Ko, Seok-Hwan Moon, Kwang-Seong Choi
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Publication number: 20140159547Abstract: The present inventive concept discloses an impact-type piezoelectric micro power generator. The impact-type piezoelectric micro power generator may comprise a base having a cavity and at least one stop area adjacent to the cavity; a frame fastened to the base; a vibrating body comprising a plurality of first vibrating beams extended from the frame toward a top of the cavity, an impact beam connected to between first tips of the plurality of first vibrating beams and extended onto the stop area, and a second vibrating beam extended from the impact beam to between the plurality of first vibrating beams, the second vibrating beam having a second tip; and a piezoelectric device disposed on one of a top and a bottom of the second vibrating beam and the impact beam, the piezoelectric device generating electric power according to impacts of the vibrating body to the stop area and bending of the impact beam and the second vibrating beam.Type: ApplicationFiled: April 17, 2013Publication date: June 12, 2014Applicant: Electronics and Telecommunications Research InstituteInventors: Chi Hoon JUN, Sang Choon Ko, Seok-Hwan Moon, Kwang-Seong Choi
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Patent number: 8664833Abstract: Disclosed are a slim self-powering power supplier using a flexible PCB for a wireless sensor network and a sensor node using the same, and a fabrication method thereof. An exemplary embodiment of the present disclosure provides a self-powering power supplier including: a flexible PCB; a lower electrode positioned on the flexible PCB; a piezoelectric body having a cantilever structure deposited on the lower electrode; and an upper electrode formed on the piezoelectric body.Type: GrantFiled: November 4, 2011Date of Patent: March 4, 2014Assignee: Electronics & Telecommunications Research InstituteInventors: Sang Choon Ko, Chi Hoon Jun
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Publication number: 20140054262Abstract: Disclosed is a piezoelectric micro energy harvester and manufacturing method thereof, the method including: forming an insulation film on a substrate; patterning the insulation film and forming an electrode pad pattern, a center electrode pattern, and a side electrode pattern; forming an open cavity at an inside of the substrate for suspension of the center electrode pattern and the side electrode pattern; disposing a conductive film on the electrode pad pattern, the center electrode pattern, and the side electrode pattern and forming electrode pads, a center electrode, and a side electrode; and forming a piezoelectric film so as to cover a space between the center electrode and the side electrode and upper surfaces of the center electrode and the side electrode.Type: ApplicationFiled: October 29, 2013Publication date: February 27, 2014Applicant: Electronics and Telecommunications Research InstituteInventors: Chi Hoon JUN, Sang Choon KO, Jong Tae MOON
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Patent number: 8598768Abstract: Disclosed is a piezoelectric micro energy harvester and manufacturing method thereof, the method including: forming an insulation film on a substrate; patterning the insulation film and forming an electrode pad pattern, a center electrode pattern, and a side electrode pattern; forming an open cavity at an inside of the substrate for suspension of the center electrode pattern and the side electrode pattern; disposing a conductive film on the electrode pad pattern, the center electrode pattern, and the side electrode pattern and forming electrode pads, a center electrode, and a side electrode; and forming a piezoelectric film so as to cover a space between the center electrode and the side electrode and upper surfaces of the center electrode and the side electrode.Type: GrantFiled: December 12, 2011Date of Patent: December 3, 2013Assignee: Electronics and Telecommunications Research InstituteInventors: Chi Hoon Jun, Sang Choon Ko, Jong Tae Moon
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Patent number: 8319397Abstract: Provided is a small piezoelectric power generator applied to a wireless sensor network system of a tire pressure monitoring system (TPMS) for monitoring an internal environment of a tire such as variation in air pressure in the tire. In particular, when the system, in which air pressure, temperature and acceleration sensors are mounted, installed in the tire is operated in the TPMS for an automobile, a small piezoelectric power generator for the TPMS can be used as a power source in place of a conventional battery. The piezoelectric power generator includes a substrate having an electrode for transmitting power to the exterior, a metal plate formed on the substrate, and a piezoelectric body disposed on the metal plate and transmitting the power generated by a piezoelectric material to the electrode.Type: GrantFiled: August 24, 2010Date of Patent: November 27, 2012Assignee: Electronics and Telecommunications Research InstituteInventors: Sang Choon Ko, Chang Han Je, Ho Jun Ryu, Sung Sik Lee, Chi Hoon Jun
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Patent number: 8263426Abstract: Provided is a high-sensitivity MEMS-type z-axis vibration sensor, which may sense z-axis vibration by differentially shifting an electric capacitance between a doped upper silicon layer and an upper electrode from positive to negative or vice versa when center mass of a doped polysilicon layer is moved due to z-axis vibration. Particularly, since a part of the doped upper silicon layer is additionally connected to the center mass of the doped polysilicon layer, and thus an error made by the center mass of the doped polysilicon layer is minimized, it may sensitively respond to weak vibration of low frequency such as seismic waves. Accordingly, since the high-sensitivity MEMS-type z-axis vibration sensor sensitively responds to a small amount of vibration in a low frequency band, it can be applied to a seismograph sensing seismic waves of low frequency which have a very small amount of vibration and a low vibration speed.Type: GrantFiled: July 24, 2009Date of Patent: September 11, 2012Assignee: Electronics and Telecommunications Research InstituteInventors: Sang Choon Ko, Chi Hoon Jun, Byoung Gon Yu, Chang Auck Choi
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Publication number: 20120152028Abstract: Disclosed are a slim self-powering power supplier using a flexible PCB for a wireless sensor network and a sensor node using the same, and a fabrication method thereof. An exemplary embodiment of the present disclosure provides a self-powering power supplier including: a flexible PCB; a lower electrode positioned on the flexible PCB; a piezoelectric body having a cantilever structure deposited on the lower electrode; and an upper electrode formed on the piezoelectric body.Type: ApplicationFiled: November 4, 2011Publication date: June 21, 2012Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Sang Choon KO, Chi Hoon Jun
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Publication number: 20120153778Abstract: Disclosed is a piezoelectric micro energy harvester and manufacturing method thereof, the method including: forming an insulation film on a substrate; patterning the insulation film and forming an electrode pad pattern, a center electrode pattern, and a side electrode pattern; forming an open cavity at an inside of the substrate for suspension of the center electrode pattern and the side electrode pattern; disposing a conductive film on the electrode pad pattern, the center electrode pattern, and the side electrode pattern and forming electrode pads, a center electrode, and a side electrode; and forming a piezoelectric film so as to cover a space between the center electrode and the side electrode and upper surfaces of the center electrode and the side electrode.Type: ApplicationFiled: December 12, 2011Publication date: June 21, 2012Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Chi Hoon JUN, Sang Choon KO, Jong Tae MOON
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Patent number: 8047074Abstract: Provided are a humidity sensor and a method of manufacturing the same. The humidity sensor has high sensitivity, quick response time, improved temperature characteristics, low hysteresis and excellent durability. Moreover, for the humidity sensor, a humidity sensitive layer may be formed of various materials. The humidity sensor may be manufactured in a small size on a large scale.Type: GrantFiled: November 12, 2009Date of Patent: November 1, 2011Assignee: Electronics and Telecommunications Research InstituteInventors: Chi Hoon Jun, Sang Choon Ko, Chang Auck Choi, Byoung Gon Yu
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Patent number: 7963147Abstract: Provided are a micro gas sensor for measuring a gas concentration configured to achieve a high heating and cooling rate of a gas sensitive layer, achieve temperature uniformity, and achieve durability against thermal impact and mechanical impact; and a method for manufacturing the micro gas sensor. The micro gas sensor includes: a vacuum cavity disposed in a substrate; a support layer covering the vacuum cavity; a sealing layer sealing the support layer and the vacuum cavity; a micro heater disposed on the sealing layer; a plurality of electrodes disposed on the micro heater, insulated from the micro heater; and a gas sensitive layer covering the electrodes.Type: GrantFiled: December 6, 2007Date of Patent: June 21, 2011Assignee: Electronics and Telecommunications Research InstituteInventors: Chi-Hoon Jun, Sang-Choon Ko, Hyeon-Bong Pyo, Seon-Hee Park
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Publication number: 20110140578Abstract: Provided is a small piezoelectric power generator applied to a wireless sensor network system of a tire pressure monitoring system (TPMS) for monitoring an internal environment of a tire such as variation in air pressure in the tire. In particular, when the system, in which air pressure, temperature and acceleration sensors are mounted, installed in the tire is operated in the TPMS for an automobile, a small piezoelectric power generator for the TPMS can be used as a power source in place of a conventional battery. The piezoelectric power generator includes a substrate having an electrode for transmitting power to the exterior, a metal plate formed on the substrate, and a piezoelectric body disposed on the metal plate and transmitting the power generated by a piezoelectric material to the electrode.Type: ApplicationFiled: August 24, 2010Publication date: June 16, 2011Applicant: Electronics and Telecommunications Research InstituteInventors: Sang Choon Ko, Chang Han Je, Ho Jun Ryu, Sung Sik Lee, Chi Hoon Jun
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Patent number: RE44356Abstract: A method of manufacturing a tunable wavelength optical filter. The method includes steps of forming a first sacrificial oxide film for floating a lower mirror on a semiconductor substrate; sequentially laminating conductive silicon films and oxide films for defining a mirror region on the first sacrificial oxide film in a multi-layer and laminating another conductive silicon film to form a lower mirror; sequentially laminating conductive silicon films and oxide films for defining the mirror region on a second sacrificial oxide film in a multi-layer and laminating another conductive silicon film to form an upper mirror and forming an optical tuning space between the lower mirror and the upper mirror and etching the first sacrificial oxide film and the second sacrificial oxide film such that the lower mirror is floated on the semiconductor substrate.Type: GrantFiled: July 1, 2010Date of Patent: July 9, 2013Assignee: Electronics and Telecommunications Research InstituteInventors: Chang Auck Choi, Myung Lae Lee, Chang Kyu Kim, Chi Hoon Jun, Youn Tae Kim