Patents by Inventor Chi-Horn Pai
Chi-Horn Pai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240153812Abstract: A method for fabricating a semiconductor device includes the steps of first forming a shallow trench isolation (STI) in a substrate, forming a first gate structure on the substrate and adjacent to the STI, forming a first doped region between the first gate structure and the STI, forming a second doped region between the first doped region and the first gate structure, forming a first contact plug on the first doped region, and then forming a second contact plug on the second doped region.Type: ApplicationFiled: December 4, 2022Publication date: May 9, 2024Applicant: UNITED MICROELECTRONICS CORP.Inventors: Wen-Kai Lin, Chi-Horn Pai, Sheng-Yuan Hsueh, Kuo-Hsing Lee, Chih-Kai Kang
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Publication number: 20240015958Abstract: A one-time programmable memory structure comprises: A transistor includes a gate. A capacitor includes a first electrode, a second electrode, and an insulating layer. The second electrode is disposed on the first electrode. A top surface of the first electrode and a top surface of the gate are located on a same plane perpendicular to a direction of the first electrode toward the second electrode. An interconnect structure is electrically connected between the transistor and the first electrode of the capacitor. The interconnect structure is electrically connected to the first electrode at a top surface of the first electrode. A resistor comprises a conductive layer. Top and bottom surfaces of the conductive layer are respectively located on a same plane, perpendicular to the direction of the first electrode toward the second electrode, with the top and bottom surfaces of the gate.Type: ApplicationFiled: September 20, 2023Publication date: January 11, 2024Applicant: United Microelectronics Corp.Inventors: Kuo-Hsing Lee, Chi-Horn Pai, Chang Chien Wong, Sheng-Yuan Hsueh, Ching Hsiang Tseng, Shih-Chieh Hsu
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Publication number: 20230422491Abstract: A method for fabricating a semiconductor device includes the steps of first providing a substrate comprising an one time programmable (OTP) device region, forming a shallow trench isolation (STI) in the substrate, removing part of the STI to form a first step on a corner of the substrate, forming a first gate oxide layer on the substrate, removing the first gate oxide layer to form a second step on the corner of the substrate, forming a second gate oxide layer on the substrate, and then forming a first gate structure on the substrate and the STI.Type: ApplicationFiled: July 20, 2022Publication date: December 28, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Yung-Chen Chiu, Chi-Horn Pai, Sheng-Yuan Hsueh, Kuo-Hsing Lee, Chih-Kai Kang
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Patent number: 11854632Abstract: A semiconductor memory structure includes a substrate having thereon a transistor forming region and a capacitor forming region. A transistor is disposed on the substrate within the transistor forming region. A capacitor is disposed within the capacitor forming region and electrically coupled to the transistor. A first inter-layer dielectric layer covers the transistor forming region and the capacitor forming region. The first inter-layer dielectric layer surrounds a metal gate of the transistor and a bottom plate of the capacitor. A cap layer is disposed on the first inter-layer dielectric layer. The cap layer has a first thickness within the transistor forming region and a second thickness within the capacitor forming region. The first thickness is greater than the second thickness. The cap layer within the capacitor forming region acts as a capacitor dielectric layer of the capacitor.Type: GrantFiled: October 15, 2021Date of Patent: December 26, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Kuo-Hsing Lee, Chien-Liang Wu, Wen-Kai Lin, Te-Wei Yeh, Sheng-Yuan Hsueh, Chi-Horn Pai
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Publication number: 20230380148Abstract: A method for fabricating a semiconductor device includes the steps of first providing a substrate having an one time programmable (OTP) device region, forming a shallow trench isolation (STI) in the substrate, forming a first doped region adjacent to the STI, removing part of the STI, and then forming a first gate structure on the substrate and the STI. Preferably, the first gate structure includes a high-k dielectric layer on the substrate and a gate electrode on the high-k dielectric layer, in which the high-k dielectric layer comprises a first L-shape.Type: ApplicationFiled: June 20, 2022Publication date: November 23, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Kuo-Hsing Lee, Chun-Hsien Lin, Chih-Kai Kang, Ting-Hsiang Huang, Chien-Liang Wu, Sheng-Yuan Hsueh, Chi-Horn Pai
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Publication number: 20230378166Abstract: A method for fabricating a semiconductor device includes the steps of first providing a substrate having a resistor region, forming a first gate structure on the resistor region, forming a first interlayer dielectric (ILD) layer around the first gate structure, transforming the first gate structure into a first metal gate having a gate electrode on the substrate and a hard mask on the gate electrode, and then forming a resistor on the first metal gate.Type: ApplicationFiled: June 20, 2022Publication date: November 23, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Kuo-Hsing Lee, Chun-Hsien Lin, Yung-Chen Chiu, Sheng-Yuan Hsueh, Chi-Horn Pai
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Publication number: 20230378167Abstract: The present disclosure provides, the semiconductor device includes a substrate, a first transistor, a capacitor, and two first plugs. The substrate has a high-voltage region and a capacitor region. The first transistor is disposed in the high-voltage region, and includes a first gate dielectric layer, a first gate electrode, and a first capping layer. The capacitor is disposed in the capacitor region and includes a second gate electrode, a second capping layer, a dielectric layer, and a conductive layer. The two first plugs are disposed on the capacitor, wherein one of the two first plugs penetrates through the second capping layer to directly contact the second gate electrode, and another one of the two first plugs directly contacts the conductive layer.Type: ApplicationFiled: June 21, 2022Publication date: November 23, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Kuo-Hsing Lee, Chun-Hsien Lin, Yung-Chen Chiu, Sheng-Yuan Hsueh, Chi-Horn Pai
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Patent number: 11825648Abstract: A one-time programmable memory structure including a substrate, a transistor, a capacitor, and an interconnect structure is provided. The transistor is located on the substrate. The capacitor includes a first electrode, a second electrode, and an insulating layer. The first electrode is disposed above the substrate. The second electrode is disposed on the first electrode. The first electrode is located between the second electrode and the substrate. The insulating layer is disposed between the first electrode and the second electrode. The interconnect structure is electrically connected between the transistor and the first electrode of the capacitor. The interconnect structure is electrically connected to the first electrode at a top surface of the first electrode.Type: GrantFiled: May 18, 2021Date of Patent: November 21, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Kuo-Hsing Lee, Chi-Horn Pai, Chang Chien Wong, Sheng-Yuan Hsueh, Ching Hsiang Tseng, Shih-Chieh Hsu
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Publication number: 20230317715Abstract: A method for fabricating a semiconductor device includes the steps of first providing a substrate having a first NMOS region, a first PMOS region, a second NMOS region, a second PMOS region, and a MOS capacitor region, forming a fin NMOS transistor on the first NMOS region, forming a fin PMOS transistor on the first PMOS region, forming a planar NMOS transistor on the second NMOS region, forming a planar PMOS transistor on the second PMOS region, and forming a planar MOS capacitor on the MOS capacitor region.Type: ApplicationFiled: April 29, 2022Publication date: October 5, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Kuo-Hsing Lee, Sheng-Yuan Hsueh, Chih-Kai Kang, Chun-Hsien Lin, Chi-Horn Pai
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Publication number: 20230247827Abstract: A one-time programmable (OTP) memory cell includes a substrate having an active area surrounded by an isolation region. A divot is disposed between the active area and the isolation region. A transistor is disposed on the active area. A diffusion-contact fuse is electrically coupled to the transistor. The diffusion-contact fuse includes a diffusion region in the active area, a silicide layer on the diffusion region, and a contact partially landed on the silicide layer and partially landed on the isolation region. A sidewall surface of the diffusion region in the divot is covered by the silicide layer. The divot is filled with the contact.Type: ApplicationFiled: April 13, 2023Publication date: August 3, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Kuo-Hsing Lee, Chang-Chien Wong, Sheng-Yuan Hsueh, Ching-Hsiang Tseng, Chi-Horn Pai, Shih-Chieh Hsu
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Patent number: 11665891Abstract: A one-time programmable (OTP) memory cell includes a substrate comprising an active area surrounded by an isolation region, a transistor disposed on the active area, and a diffusion-contact fuse electrically coupled to the transistor. The diffusion-contact fuse includes a diffusion region in the active area, a silicide layer on the diffusion region, and a contact partially landed on the silicide layer and partially landed on the isolation region.Type: GrantFiled: May 7, 2021Date of Patent: May 30, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Kuo-Hsing Lee, Chang-Chien Wong, Sheng-Yuan Hsueh, Ching-Hsiang Tseng, Chi-Horn Pai, Shih-Chieh Hsu
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Publication number: 20230081533Abstract: A semiconductor memory structure includes a substrate having thereon a transistor forming region and a capacitor forming region. A transistor is disposed on the substrate within the transistor forming region. A capacitor is disposed within the capacitor forming region and electrically coupled to the transistor. A first inter-layer dielectric layer covers the transistor forming region and the capacitor forming region. The first inter-layer dielectric layer surrounds a metal gate of the transistor and a bottom plate of the capacitor. A cap layer is disposed on the first inter-layer dielectric layer. The cap layer has a first thickness within the transistor forming region and a second thickness within the capacitor forming region. The first thickness is greater than the second thickness. The cap layer within the capacitor forming region acts as a capacitor dielectric layer of the capacitor.Type: ApplicationFiled: October 15, 2021Publication date: March 16, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Kuo-Hsing Lee, Chien-Liang Wu, Wen-Kai Lin, Te-Wei Yeh, Sheng-Yuan Hsueh, Chi-Horn Pai
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Publication number: 20220336479Abstract: A one-time programmable memory structure including a substrate, a transistor, a capacitor, and an interconnect structure is provided. The transistor is located on the substrate. The capacitor includes a first electrode, a second electrode, and an insulating layer. The first electrode is disposed above the substrate. The second electrode is disposed on the first electrode. The first electrode is located between the second electrode and the substrate. The insulating layer is disposed between the first electrode and the second electrode. The interconnect structure is electrically connected between the transistor and the first electrode of the capacitor. The interconnect structure is electrically connected to the first electrode at a top surface of the first electrode.Type: ApplicationFiled: May 18, 2021Publication date: October 20, 2022Applicant: United Microelectronics Corp.Inventors: Kuo-Hsing Lee, Chi-Horn Pai, Chang Chien Wong, Sheng-Yuan Hsueh, Ching Hsiang Tseng, Shih-Chieh Hsu
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Publication number: 20220328504Abstract: A bit cell structure for one-time programming is provided in the present invention, including a substrate, a first doped region in the substrate and electrically connecting a source line, a second doped region in the substrate and having a source and a drain electrically connecting a bit line, a heavily-doped channel in the substrate and connecting the first doped region and the source of second doped region, and a word line crossing over the second dope region between the source and the drain.Type: ApplicationFiled: May 14, 2021Publication date: October 13, 2022Inventors: Kuo-Hsing Lee, Sheng-Yuan Hsueh, Chi-Horn Pai, Chih-Kai Kang
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Publication number: 20220328503Abstract: A one-time programmable (OTP) memory cell includes a substrate comprising an active area surrounded by an isolation region, a transistor disposed on the active area, and a diffusion-contact fuse electrically coupled to the transistor. The diffusion-contact fuse includes a diffusion region in the active area, a silicide layer on the diffusion region, and a contact partially landed on the silicide layer and partially landed on the isolation region.Type: ApplicationFiled: May 7, 2021Publication date: October 13, 2022Inventors: Kuo-Hsing Lee, Chang-Chien Wong, Sheng-Yuan Hsueh, Ching-Hsiang Tseng, Chi-Horn Pai, Shih-Chieh Hsu
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Publication number: 20220302118Abstract: The invention provides a semiconductor memory cell, the semiconductor memory cell includes a substrate having a first conductivity type, a doped region in the substrate, wherein the doped region has a second conductivity type, and the first conductivity type is complementary to the second conductivity type, a capacitor insulating layer and an upper electrode on the doped region, a transistor on the substrate, and a shallow trench isolation disposed between the transistor and the capacitor insulating layer, and the shallow trench isolation is disposed in the doped region.Type: ApplicationFiled: April 14, 2021Publication date: September 22, 2022Inventors: Kuo-Hsing Lee, Kun-Hsien Lee, Sheng-Yuan Hsueh, Chang-Chien Wong, Ching-Hsiang Tseng, Tsung-Hsun Wu, Chi-Horn Pai, Shih-Chieh Hsu
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Patent number: 11450670Abstract: The invention provides a semiconductor memory cell, the semiconductor memory cell includes a substrate having a first conductivity type, a doped region in the substrate, wherein the doped region has a second conductivity type, and the first conductivity type is complementary to the second conductivity type, a capacitor insulating layer and an upper electrode on the doped region, a transistor on the substrate, and a shallow trench isolation disposed between the transistor and the capacitor insulating layer, and the shallow trench isolation is disposed in the doped region.Type: GrantFiled: April 14, 2021Date of Patent: September 20, 2022Assignee: UNITED MICROELECTRONICS CORP.Inventors: Kuo-Hsing Lee, Kun-Hsien Lee, Sheng-Yuan Hsueh, Chang-Chien Wong, Ching-Hsiang Tseng, Tsung-Hsun Wu, Chi-Horn Pai, Shih-Chieh Hsu
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Patent number: 9147678Abstract: The present invention provides a structure of a resistor comprising: a substrate having an interfacial layer thereon; a resistor trench formed in the interfacial layer; at least a work function metal layer covering the surface of the resistor trench; at least two metal bulks located at two ends of the resistor trench and adjacent to the work function metal layer; and a filler formed between the two metal bulks inside the resistor trench, wherein the metal bulks are direct in contact with the filler.Type: GrantFiled: January 4, 2012Date of Patent: September 29, 2015Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chih-Kai Kang, Sheng-Yuan Hsueh, Shu-Hsuan Chih, Po-Kuang Hsieh, Chia-Chen Sun, Po-Cheng Huang, Shih-Chieh Hsu, Chi-Horn Pai, Yao-Chang Wang, Jie-Ning Yang, Chi-Sheng Tseng, Po-Jui Liao, Kuang-Hung Huang, Shih-Chang Chang
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Patent number: 8981527Abstract: A method for forming a resistor integrated with a transistor having metal gate includes providing a substrate having a transistor region and a resistor region defined thereon, forming a transistor having a polysilicon dummy gate in the transistor region and a polysilicon main portion with two doped regions positioned at two opposite ends in the resistor region, performing an etching process to remove the polysilicon dummy gate to form a first trench and remove portions of the doped regions to form two second trenches, and forming a metal gate in the first trench to form a transistor having the metal gate and metal structures respectively in the second trenches to form a resistor.Type: GrantFiled: August 23, 2011Date of Patent: March 17, 2015Assignee: United Microelectronics Corp.Inventors: Jie-Ning Yang, Shih-Chieh Hsu, Yao-Chang Wang, Chi-Horn Pai, Chi-Sheng Tseng, Kun-Szu Tseng, Ying-Hung Chou, Chiu-Hsien Yeh
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Patent number: 8890551Abstract: A test key structure for use in measuring step height includes a substrate, and a pair of test contacts. The substrate includes an isolation region and a diffusion region. The test contact pair includes a first test contact and a second test contact for measuring electrical resistances. The first test contact is disposed on the diffusion region and the second test contact is disposed on the isolation region.Type: GrantFiled: November 1, 2011Date of Patent: November 18, 2014Assignee: United Microelectronics Corp.Inventors: Chih-Kai Kang, Shu-Hsuan Chih, Sheng-Yuan Hsueh, Chia-Chen Sun, Po-Kuang Hsieh, Chi-Horn Pai, Shih-Chieh Hsu