Patents by Inventor Chi Ma

Chi Ma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250143756
    Abstract: An elastic intramedullary fixation device includes a serpentine frame and a shell, the inner surface of the shell is rotatably connected with a locking rod, one end of the locking rod is inserted with a key rod, one end of the shell is inserted with a clamping rod, the outer surfaces of the clamping rod and the key rod are sleeved with a connecting sleeve, the outer surfaces of the clamping rod and the key rod are provided with a connecting component, and the surfaces of the clamping rod and the shell are provided with a self-locking component. By configuring a connecting component and a self-locking component, the connecting component not only allows for the adjustment of the positional relationship between the key rod and the clamping rod, but also enables engagement with the locking component, thereby enhancing the stability of the connection between the clamping plate and the shell.
    Type: Application
    Filed: January 10, 2025
    Publication date: May 8, 2025
    Applicant: The Fourth Medical Center of the Chinese People's Liberation Army General Hospital
    Inventors: Licheng ZHANG, Peifu TANG, Xiang CUI, Chi MA, Houchen LV, Jia LI, Hua CHEN
  • Patent number: 12290289
    Abstract: An elastic intramedullary fixation device includes a serpentine frame and a shell, the inner surface of the shell is rotatably connected with a locking rod, one end of the locking rod is inserted with a key rod, one end of the shell is inserted with a clamping rod, the outer surfaces of the clamping rod and the key rod are sleeved with a connecting sleeve, the outer surfaces of the clamping rod and the key rod are provided with a connecting component, and the surfaces of the clamping rod and the shell are provided with a self-locking component. By configuring a connecting component and a self-locking component, the connecting component not only allows for the adjustment of the positional relationship between the key rod and the clamping rod, but also enables engagement with the locking component, thereby enhancing the stability of the connection between the clamping plate and the shell.
    Type: Grant
    Filed: January 10, 2025
    Date of Patent: May 6, 2025
    Assignee: The Fourth Medical Center of the Chinese People's Liberation Army General Hospital
    Inventors: Licheng Zhang, Peifu Tang, Xiang Cui, Chi Ma, Houchen Lv, Jia Li, Hua Chen
  • Patent number: 12290291
    Abstract: A proximal-femur intraosseous release device includes a release mechanism. A primary fixing mechanism is provided at one end of the release mechanism, the primary fixing mechanism includes a first shell, and a second shell, a first triangular block and a second triangular block are arranged inside the first shell; the second shell is screwed to the first shell through threads, a bottom of the second shell is rotatably connected with the first triangular block, the first triangular block is slidably connected with the first shell, a bottom surface of the first triangular block is an inclined surface, the second triangular block is located at a bottom of the first triangular block, a top surface of the second triangular block is an inclined surface, and a through hole matched with the second triangular block is formed in the first shell.
    Type: Grant
    Filed: November 27, 2024
    Date of Patent: May 6, 2025
    Assignee: The Fourth Medical Center of the Chinese People's Liberation Army General Hospital
    Inventors: Licheng Zhang, Peifu Tang, Chi Ma, Xiang Cui, Pengbin Yin, Yong Xie, Junsong Wang
  • Patent number: 12283637
    Abstract: A MOS capacitor includes a substrate having a capacitor forming region thereon, an ion well having a first conductivity type in the substrate, a counter doping region having a second conductivity type in the ion well within the capacitor forming region, a capacitor dielectric layer on the ion well within the capacitor forming region, a gate electrode on the capacitor dielectric layer, a source doping region having the second conductivity type on a first side of the gate electrode within the capacitor forming region, and a drain doping region having the second conductivity type on a second side of the gate electrode within the capacitor forming region.
    Type: Grant
    Filed: October 31, 2022
    Date of Patent: April 22, 2025
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Jian-Li Lin, Wei-Da Lin, Cheng-Guo Chen, Ta-Kang Lo, Yi-Chuan Chen, Huan-Chi Ma, Chien-Wen Yu, Kuan-Ting Lu, Kuo-Yu Liao
  • Publication number: 20250090200
    Abstract: An augmented reality (AR)-assisted enhanced fracture reduction fixator includes a bidirectional telescopic rod and two connecting columns, a ball groove is provided in a middle part of each of the two connecting columns, a ball is rotatably connected to an inner wall of each of the two ball grooves, and the two balls are fixedly connected to a telescopic end of the bidirectional telescopic rod. A rectangular slider is slid to a suitable needle insertion position and angle, and a bone nail is inserted into proximal and distal ends of a fracture. Then, the rectangular slider is fixed by screwing. Based on different fracture sites of a patient, two fixing frame bodies need to adapt to the fracture sites of the patient, that is, an angle between the two fixing frame bodies will change. The ball rotates in the corresponding ball groove.
    Type: Application
    Filed: November 28, 2024
    Publication date: March 20, 2025
    Applicant: The Fourth Medical Center of the Chinese People's Liberation Army General Hospital
    Inventors: Licheng ZHANG, Peifu TANG, Chi MA, Xiang CUI, Houchen LV, Junsong WANG, Jiaxu WANG
  • Publication number: 20250090232
    Abstract: A method for auxiliarily planning a fracture reduction path based on an augmented reality technology includes: obtaining fracture image data for a fracture area of a patient, the fracture image data including computer tomography (CT) data and X-ray data; reconstructing a three-dimensional model of a fracture part based on the fracture image data; matching and calibrating the three-dimensional model of the fracture part based on the fracture area of the patient in an actual scene; inputting a calibrated three-dimensional model of the fracture part and a corresponding fracture type and fracture surgery requirement into a fracture reduction path planning model to determine at least one corresponding optimized fracture reduction path, where the fracture reduction path planning model includes a cascaded reinforcement learning (RL) module and a multi-physics field simulation optimization module; and rendering each fracture reduction path, and determining a target fracture reduction path according to a detected inte
    Type: Application
    Filed: November 29, 2024
    Publication date: March 20, 2025
    Applicant: The Fourth Medical Center of the Chinese People's Liberation Army General Hospital
    Inventors: Licheng ZHANG, Peifu TANG, Xiang CUI, Chi MA, Houchen LV, Jia LI, Pengbin YIN
  • Publication number: 20250082377
    Abstract: A proximal-femur intraosseous release device includes a release mechanism, wherein a primary fixing mechanism is provided at one end of the release mechanism, the primary fixing mechanism includes a first shell, and a second shell, a first triangular block and a second triangular block are arranged inside the first shell; the second shell is screwed to the first shell through threads, a bottom of the second shell is rotatably connected with the first triangular block, the first triangular block is slidably connected with the first shell, a bottom surface of the first triangular block is an inclined surface, the second triangular block is located at a bottom of the first triangular block, a top surface of the second triangular block is an inclined surface, and a through hole matched with the second triangular block is formed in the first shell.
    Type: Application
    Filed: November 27, 2024
    Publication date: March 13, 2025
    Applicant: The Fourth Medical Center of the Chinese People's Liberation Army General Hospital
    Inventors: Licheng ZHANG, Peifu TANG, Chi MA, Xiang CUI, Pengbin YIN, Yong XIE, Junsong WANG
  • Publication number: 20250047220
    Abstract: The drilling system withstands downhole conditions at the bottom of the borehole and drilling conditions due to the constant movement and vibration. The drilling system includes a drill bit and a sensor system with a system housing, a primary power supply and interior sensor. The primary power supply includes piezoelectric panels for converting radial vibration into energy. The interior sensor is locally powered by the primary power supply at the remote downhole location at the bottom of the borehole. The interior sensor collects data related to a downhole condition and is in communication with the primary power supply to generate confirmed data based on the amount of energy generated by the primary power supply. The confirmed data is more accurate and reliable than the data collected by the interior sensor and can be used to guide the path of the drill bit through the rock formation in drilling operations.
    Type: Application
    Filed: August 6, 2023
    Publication date: February 6, 2025
    Inventors: Jinjun WANG, Weixiong WANG, Jayson BYRD, Chris CHENG, Xiongwen YANG, Qi PENG, Xiaohua KE, Kevin WADDELL, Chi MA
  • Publication number: 20250048649
    Abstract: A semiconductor device includes a sense amplifier, a first magnetic tunneling junction (MTJ) connected to the sense amplifier at a first distance, a second MTJ connected to the sense amplifier at a second distance, and a third MTJ connected to the sense amplifier at a third distance. Preferably, the first distance is less than the second distance, the second distance is less than the third distance, a critical dimension of the first MTJ is less than a critical dimension of the second MTJ, and the critical dimension of the second MTJ is less than a critical dimension of the third MTJ.
    Type: Application
    Filed: October 17, 2024
    Publication date: February 6, 2025
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Po-Wei Wang, Yi-An Shih, Huan-Chi Ma
  • Patent number: 12218610
    Abstract: The drilling system withstands downhole conditions at the bottom of the borehole and drilling conditions due to the constant movement and vibration. The drilling system includes a drill bit and a sensor system with a system housing, a primary power supply and interior sensor. The primary power supply includes piezoelectric panels for converting radial vibration into energy. The interior sensor is locally powered by the primary power supply at the remote downhole location at the bottom of the borehole. The interior sensor collects data related to a downhole condition and is in communication with the primary power supply to generate confirmed data based on the amount of energy generated by the primary power supply. The confirmed data is more accurate and reliable than the data collected by the interior sensor and can be used to guide the path of the drill bit through the rock formation in drilling operations.
    Type: Grant
    Filed: August 6, 2023
    Date of Patent: February 4, 2025
    Assignees: CNPC USA Corporation, Beijing Huamei, Inc., China National Petroleum Corporation
    Inventors: Jinjun Wang, Weixiong Wang, Jayson Byrd, Chris Cheng, Xiongwen Yang, Qi Peng, Xiaohua Ke, Kevin Waddell, Chi Ma
  • Publication number: 20240413233
    Abstract: A GaN-based semiconductor device includes a substrate; a GaN channel layer disposed on the substrate; a AlGaN layer disposed on the GaN channel layer; a p-GaN gate layer disposed on the AlGaN layer; and a nitrogen-rich TiN hard mask layer disposed on the p-GaN gate layer. The nitrogen-rich TiN hard mask layer has a nitrogen-to-titanium (N/Ti) ratio that is greater than 1.0. A gate electrode layer is disposed on the nitrogen-rich TiN hard mask layer.
    Type: Application
    Filed: July 13, 2023
    Publication date: December 12, 2024
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Yi-Chuan Chen, Po-Wei Wang, Huan-Chi Ma, Chien-Wen Yu
  • Patent number: 12156408
    Abstract: A semiconductor device includes a sense amplifier, a first magnetic tunneling junction (MTJ) connected to the sense amplifier at a first distance, a second MTJ connected to the sense amplifier at a second distance, and a third MTJ connected to the sense amplifier at a third distance. Preferably, the first distance is less than the second distance, the second distance is less than the third distance, a critical dimension of the first MTJ is less than a critical dimension of the second MTJ, and the critical dimension of the second MTJ is less than a critical dimension of the third MTJ.
    Type: Grant
    Filed: November 21, 2023
    Date of Patent: November 26, 2024
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Po-Wei Wang, Yi-An Shih, Huan-Chi Ma
  • Patent number: 12145208
    Abstract: The present disclosure provides a worm gear machine, including a workbench, a cutter holder and a cutter holder adjusting system, where the cutter holder includes a big bracket, a first slide rail is disposed on the big bracket, a slide seat in sliding fit with the first slide rail is disposed on the first slide rail, a second slide rail is disposed on the slide seat, a small bracket in sliding fit with the second slide rail is disposed on the second slide rail; and a cutter holder spindle is disposed between the big bracket and the slide seat, a cutter bar synchronously rotating with the cutter holder spindle is disposed between an end of the cutter holder spindle facing toward the small bracket and the small bracket, and a gearbox for driving the cutter spindle to rotate is disposed in the big bracket.
    Type: Grant
    Filed: September 9, 2021
    Date of Patent: November 19, 2024
    Assignee: CHONGQING UNIVERSITY
    Inventors: Shilong Wang, Chi Ma, Sibao Wang, Dechao Heng, Lingwan Zeng, Yong Yang, Canhui Yang
  • Patent number: 12066809
    Abstract: A method for identifying a critical error of a worm gear machine, step 1: obtaining an actual forward kinematic model T27a and an ideal forward kinematic model T27i from a coordinate system of a worm gear hob to a coordinate system of a worm gear, thereby establishing a geometric error-pose error model of the worm gear machine; step 2: regarding the geometric error-pose error model of the worm gear machine as a multi-input multi-output (MIMO) nonlinear system, and solving, by taking the geometric error of each motion axis of the worm gear machine as an input feature X, and a pose error between the worm gear hob and the worm gear as an output variable Y, an importance coefficient of each input feature with a random forest algorithm; and step 3: determining a critical error affecting a machining accuracy of the worm gear machine.
    Type: Grant
    Filed: September 9, 2021
    Date of Patent: August 20, 2024
    Assignee: CHONGQING UNIVERSITY
    Inventors: Shilong Wang, Chi Ma, Sibao Wang, Dechao Heng, Lingwan Zeng, Yong Yang, Canhui Yang
  • Publication number: 20240243185
    Abstract: Provided is a semiconductor device including an enhancement mode (E-mode) high electron mobility transistor (HEMT). The E-mode HEMT includes a substrate, and a channel layer disposed on the substrate. A barrier structure disposed on the channel layer. A pair of source/drain (S/D) metals respectively disposed on the channel layer at opposite sides of the barrier structure. A gate metal disposed on the barrier structure between the pair of S/D metals. The channel layer has a two-dimensional electron gas (2DEG) layer close to an interface between the channel layer and the barrier structure. A fluorine ion concentration in the channel layer adjacent to the 2DEG layer is greater than that away from the 2DEG layer.
    Type: Application
    Filed: February 17, 2023
    Publication date: July 18, 2024
    Applicant: United Microelectronics Corp.
    Inventors: Huan Chi Ma, Kuan-Ting Lin, Ying Jie Huang, Chien-Wen Yu
  • Patent number: 12038096
    Abstract: The present invention discloses a choke combination device for gas production. wherein a first boss is arranged on an inner wall of the choke sleeve, a first through hole is formed in the middle of the first boss, a second boss is arranged on an outer peripheral side surface of the choke; the plug is provided with a stepped hole; outer walls of the first cylinder and the second cylinder are in sliding connection with a key groove in the inner wall of the choke sleeve, inner walls of the first cylinder and the second cylinder are in threaded connection with the first shaft section and the second shaft section respectively. The device is simple to replace and operate, which can save the operating time of replacement operation.
    Type: Grant
    Filed: February 2, 2024
    Date of Patent: July 16, 2024
    Assignees: Sichuan Hongda Security Technology Service Co., Ltd, Sichuan Kete Testing Technology Co., Ltd
    Inventors: Yonggang Deng, Gang Wang, Ketao Cai, Chi Ma, Shundong Tang, Rui Wang, Shanji Wang, Wenbin Chen, Wei Zhang, Yan Shi
  • Patent number: 12011773
    Abstract: A drill bit for cutting formation comprises a bit body, a plurality of cutters, and a plurality of blades with pockets to accommodate the cutters, respectively. In an embodiment, the plurality of cutters comprise a substrate, an ultra-hard layer, a concave surface on the top of the ultra-hard layer, wherein the concave surface comprises a plurality of planar and curved surfaces.
    Type: Grant
    Filed: May 26, 2021
    Date of Patent: June 18, 2024
    Assignees: CNPC USA Corporation, Beijing Huamei, Inc.
    Inventors: Jiaqing Yu, Chris Cheng, Ning Li, David He, Kevin Waddell, Xu Wang, Chi Ma, Xiongwen Yang
  • Publication number: 20240100630
    Abstract: The present application relates to a laser cutting head with a variable spot trajectory shape and a cutting process, belonging to the field of laser cutting processing. The technical solution is that a laser cutting head with a variable spot trajectory shape includes a beam shaper, a trajectory control assembly and a focusing assembly that are successively arranged in an optical path direction; the trajectory control assembly includes a reflecting lens, an X-axis galvanometer and a Y-axis galvanometer; a rotation axis of the X-axis galvanometer is a vertical axis; a rotation axis of the Y-axis galvanometer is a horizontal axis; a reflection surface of the reflecting lens is opposite to a reflection surface of the X-axis galvanometer, and a reflection surface of the Y-axis galvanometer is opposite to the reflection surface of the X-axis galvanometer.
    Type: Application
    Filed: November 9, 2021
    Publication date: March 28, 2024
    Inventors: Xuguang YANG, Chengshun ZHANG, Chuanming CHEN, Qinmin ZHANG, Mandun NIU, Chi MA, Wenqi JIA, Wei LI, Yongze ZHANG
  • Publication number: 20240093556
    Abstract: A drill bit for cutting formation comprises a bit body, a plurality of cutters, and a plurality of blades with pockets to accommodate the cutters, respectively. Each of the plurality of cutters has a substrate, an ultra-hard layer, an inclined surface on the top of the ultra-hard layer, wherein the inclined surface slants downward from a cutting edge to a trailing edge. The cutter can improve cutting efficiency and service life.
    Type: Application
    Filed: December 1, 2023
    Publication date: March 21, 2024
    Applicants: CNPC USA CORPORATION, BEIJING HUAMEI INC., CHINA NATIONAL PETROLEUM CORPORATION
    Inventors: Jiaqing YU, Chris Cheng, Xu Wang, Ming Yi, Chi Ma
  • Publication number: 20240090233
    Abstract: A semiconductor device includes a sense amplifier, a first magnetic tunneling junction (MTJ) connected to the sense amplifier at a first distance, a second MTJ connected to the sense amplifier at a second distance, and a third MTJ connected to the sense amplifier at a third distance. Preferably, the first distance is less than the second distance, the second distance is less than the third distance, a critical dimension of the first MTJ is less than a critical dimension of the second MTJ, and the critical dimension of the second MTJ is less than a critical dimension of the third MTJ.
    Type: Application
    Filed: November 21, 2023
    Publication date: March 14, 2024
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Po-Wei Wang, Yi-An Shih, Huan-Chi Ma