Abstract: The instant disclosure relates to a kit comprising two or more separately contained cosmetic compositions that are miscible with one another upon mixing, wherein the two or more cosmetic composition have: (a) a viscosity of at least 1,800 cPs or a storage modulus (G?) greater than the loss modulus (G?) for a viscosity below 1,800 cPs; and (b) a maximum yield stress of 9,000 Pa; and wherein the two or more cosmetic compositions are chosen from: (i) oil in water emulsions; (ii) water in silicone emulsions; and (iii) anhydrous emulsions. Methods for treating skin with the kits and/or the cosmetic compositions are also disclosed.

Abstract: A method for fabricating p-type field effect transistor (FET) includes the steps of first providing a substrate, forming a pad layer on the substrate, forming a well in the substrate, performing an ion implantation process to implant germanium ions into the substrate to form a channel region, and then conducting an anneal process to divide the channel region into a top portion and a bottom portion. After removing the pad layer, a gate structure is formed on the substrate and a lightly doped drain (LDD) is formed adjacent to two sides of the gate structure.

Abstract: The present invention relates to technical field of chemical synthesis of drugs, and provides a preparation method of Macitentan and intermediate compound thereof. Adding THF solution containing compound II and 5-bromo-2-chloropyrimidine slowly into THF solution containing base to react, or adding THF solution containing compound II and THF solution containing 5-bromo-2-chloropyrimidine slowly at the same time into THF solution containing base to react and obtain Macitentan (shown as compound I), wherein the base is selected from sodium hydride, potassium hydride, lithium hydride or lithium bis(trimethylsilyl)amide. The selectivity of the preparation method is very good, which is suitable for industrial production. The obtained product Macitentan has good quality and high yield. And the product compound II also has good quality and high yield, its HPLC purity is up to 99.0%, the content of impurity A is less than 0.20%, the content of impurity B is less than 0.25%.

Abstract: A semiconductor device includes a substrate and a gate structure. The gate structure is disposed on the substrate, and the gate structure includes a titanium nitride barrier layer a titanium aluminide layer, and a middle layer. The titanium aluminide layer is disposed on the titanium nitride barrier layer, and the middle layer is disposed between the titanium aluminide layer and the titanium nitride barrier layer. The middle layer is directly connected with the titanium aluminide layer and the titanium nitride barrier layer, and the middle layer includes titanium and nitrogen. A concentration of nitrogen in the middle layer is gradually decreased in a vertical direction towards an interface between the middle layer and the titanium aluminide layer.

Abstract: A drill bit for cutting formation comprises a bit body, a plurality of cutters, a plurality of blades with pockets to accommodate the cutters respectively. Each of the plurality of cutters has an ultra-hard layer, two side facets extending obliquely inward from the substrate to a top surface of the ultra-hard layer, a convex portion between the two side facets. The convex portion comprises a transition surface and the transitional surface is convex as it extends between adjacent the two side facets. The curvature of the transitional surface varies along the cutter axis with the curvature at the cutting edge larger than the curvature of the cutter circumferential surface.

Abstract: A composition for brightening or whitening keratin materials in the form of an emulsion, comprises an oily phase dispersed in an aqueous phase, and comprises: i)from 2.0 wt. % to 10.0 wt% of at least one white particles, relative the total weight of the composition; ii) at least one anionic terpolymer as a thickener; and iii) an emulsifier system including: a)at least one alkyl phosphate salt; b)at least one polyoxyethylene oxide C12-C24 fatty acid ester; and c)at least one glyceryl C12-C24 fatty acid ester. A cosmetic process for brightening or whitening keratin materials, in particular human skin, comprises applying the composition as defined above to the keratin materials.

Abstract: A MOS capacitor includes a substrate having a capacitor forming region thereon, an ion well having a first conductivity type in the substrate, a counter doping region having a second conductivity type in the ion well within the capacitor forming region, a capacitor dielectric layer on the ion well within the capacitor forming region, a gate electrode on the capacitor dielectric layer, a source doping region having the second conductivity type on a first side of the gate electrode within the capacitor forming region, and a drain doping region having the second conductivity type on a second side of the gate electrode within the capacitor forming region.

Abstract: A semiconductor device includes a sense amplifier, a first magnetic tunneling junction (MTJ) connected to the sense amplifier at a first distance, a second MTJ connected to the sense amplifier at a second distance, and a third MTJ connected to the sense amplifier at a third distance. Preferably, the first distance is less than the second distance, the second distance is less than the third distance, a critical dimension of the first MTJ is less than a critical dimension of the second MTJ, and the critical dimension of the second MTJ is less than a critical dimension of the third MTJ.

Abstract: A semiconductor device includes a substrate and a gate structure. The gate structure is disposed on the substrate, and the gate structure includes a titanium nitride barrier layer and a titanium aluminide layer. The titanium aluminide layer is disposed on the titanium nitride barrier layer, and a thickness of the titanium aluminide layer ranges from twice a thickness of the titanium nitride barrier layer to three times the thickness of the titanium nitride barrier layer.

Abstract: A semiconductor device includes a substrate and a gate structure. The gate structure is disposed on the substrate, and the gate structure includes a titanium nitride barrier layer and a titanium aluminide layer. The titanium aluminide layer is disposed on the titanium nitride barrier layer, and a thickness of the titanium aluminide layer ranges from twice a thickness of the titanium nitride barrier layer to three times the thickness of the titanium nitride barrier layer.

Abstract: The present invention relates to technical field of chemical synthesis of drugs, and provides a preparation method of Macitentan and intermediate compound thereof. Adding THF solution containing compound II and 5-bromo-2-chloropyrimidine slowly into THF solution containing base to react, or adding THF solution containing compound II and THF solution containing 5-bromo-2-chloropyrimidine slowly at the same time into THF solution containing base to react and obtain Macitentan (shown as compound I), wherein the base is selected from sodium hydride, potassium hydride, lithium hydride or lithium bis(trimethylsilyl)amide. The selectivity of the preparation method is very good, which is suitable for industrial production. The obtained product Macitentan has good quality and high yield. And the product compound II also has good quality and high yield, its HPLC purity is up to 99.0%, the content of impurity A is less than 0.20%, the content of impurity B is less than 0.25%.

Abstract: A method for identifying a critical error of a worm gear machine, step 1: obtaining an actual forward kinematic model T27a and an ideal forward kinematic model T27i from a coordinate system of a worm gear hob to a coordinate system of a worm gear, thereby establishing a geometric error-pose error model of the worm gear machine; step 2: regarding the geometric error-pose error model of the worm gear machine as a multi-input multi-output (MIMO) nonlinear system, and solving, by taking the geometric error of each motion axis of the worm gear machine as an input feature X, and a pose error between the worm gear hob and the worm gear as an output variable Y, an importance coefficient of each input feature with a random forest algorithm; and step 3: determining a critical error affecting a machining accuracy of the worm gear machine.

Abstract: The present disclosure provides a worm gear machine, including a workbench, a cutter holder and a cutter holder adjusting system, where the cutter holder includes a big bracket, a first slide rail is disposed on the big bracket, a slide seat in sliding fit with the first slide rail is disposed on the first slide rail, a second slide rail is disposed on the slide seat, a small bracket in sliding fit with the second slide rail is disposed on the second slide rail; and a cutter holder spindle is disposed between the big bracket and the slide seat, a cutter bar synchronously rotating with the cutter holder spindle is disposed between an end of the cutter holder spindle facing toward the small bracket and the small bracket, and a gearbox for driving the cutter spindle to rotate is disposed in the big bracket.

Abstract: A MOS capacitor includes a substrate having a capacitor forming region thereon, an ion well having a first conductivity type in the substrate, a counter doping region having a second conductivity type in the ion well within the capacitor forming region, a capacitor dielectric layer on the ion well within the capacitor forming region, a gate electrode on the capacitor dielectric layer, a source doping region having the second conductivity type on a first side of the gate electrode within the capacitor forming region, and a drain doping region having the second conductivity type on a second side of the gate electrode within the capacitor forming region.

Abstract: A method for fabricating p-type field effect transistor (FET) includes the steps of first providing a substrate, forming a pad layer on the substrate, forming a well in the substrate, performing an ion implantation process to implant germanium ions into the substrate to form a channel region, and then conducting an anneal process to divide the channel region into a top portion and a bottom portion. After removing the pad layer, a gate structure is formed on the substrate and a lightly doped drain (LDD) is formed adjacent to two sides of the gate structure.

Abstract: Systems and methods for intelligent fan identification are described. In some embodiments, an Information Handling System (IHS) may include: an embedded controller (EC); and a memory coupled to the EC, the memory having program instructions stored thereon that, upon execution by the EC, cause the IHS to: detect a cooling fan configuration issue; determine that a number of cooling fans in the IHS has not changed between a previous configuration and a current configuration; and in response to the determination, abstain from identifying the cooling fan configuration issue as a cooling fan error.

Abstract: A p-type field effect transistor (pFET) includes a gate structure on a substrate, a channel region in the substrate directly under the gate structure, and a source/drain region adjacent to two sides of the gate structure. Preferably, the channel region includes a top portion and a bottom portion, in which a concentration of germanium in the bottom portion is lower than a concentration of germanium in the top portion and a depth of the top portion is equal to a depth of the bottom portion.

Abstract: A drill bit for cutting formation comprises a bit body, a plurality of cutters, and a plurality of blades with pockets to accommodate the cutters, respectively. Each of the plurality of cutters has a substrate, an ultra-hard layer, an inclined surface on the top of the ultra-hard layer, wherein the inclined surface slants downward from a cutting edge to a trailing edge. The cutter can improve cutting efficiency and service life.

Abstract: A drill bit for cutting formation comprises a bit body, a plurality of cutters, and a plurality of blades with pockets to accommodate the cutters, respectively. In an embodiment, the plurality of cutters comprise a substrate, an ultra-hard layer, a concave surface on the top of the ultra-hard layer, wherein the concave surface comprises a plurality of planar and curved surfaces.

Abstract: Systems and methods for intelligent fan identification are described. In some embodiments, an Information Handling System (IHS) may include: an embedded controller (EC); and a memory coupled to the EC, the memory having program instructions stored thereon that, upon execution by the EC, cause the IHS to: detect a cooling fan configuration issue; determine that a number of cooling fans in the IHS has not changed between a previous configuration and a current configuration; and in response to the determination, abstain from identifying the cooling fan configuration issue as a cooling fan error.