Patents by Inventor Chi-Shiang HSU
Chi-Shiang HSU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11942510Abstract: A light-emitting device comprises a substrate comprising a top surface; a plurality of light-emitting units formed on the top surface of the substrate comprising a first light-emitting unit, a second light-emitting unit, and one or a plurality of third light-emitting units, wherein each of the plurality of light-emitting units comprises a first semiconductor layer, an active layer and a second semiconductor layer; an insulating layer comprising a first insulating layer opening and a second insulating layer opening formed on each of the plurality of light-emitting units; a first extension electrode covering the first light-emitting unit, wherein the first extension electrode covers the first insulating layer opening on the first light-emitting unit without covering the second insulating layer opening on the first light-emitting unit; a second extension electrode covering the second light-emitting unit, wherein the second extension electrode covers the second insulating layer opening on the second light-emittinType: GrantFiled: July 27, 2022Date of Patent: March 26, 2024Assignee: EPISTAR CORPORATIONInventors: Chao-Hsing Chen, Chi-Shiang Hsu, Yong-Yang Chen
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Publication number: 20240014352Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate,Type: ApplicationFiled: September 20, 2023Publication date: January 11, 2024Inventors: Chao-Hsing CHEN, Cheng-Lin LU, Chih-Hao CHEN, Chi-Shiang HSU, I-Lun MA, Meng-Hsiang HONG, Hsin-Ying WANG, Kuo-Ching HUNG, Yi-Hung LIN
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Patent number: 11799060Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate,Type: GrantFiled: February 23, 2023Date of Patent: October 24, 2023Assignee: EPISTAR CORPORATIONInventors: Chao-Hsing Chen, Cheng-Lin Lu, Chih-Hao Chen, Chi-Shiang Hsu, I-Lun Ma, Meng-Hsiang Hong, Hsin-Ying Wang, Kuo-Ching Hung, Yi-Hung Lin
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Publication number: 20230317765Abstract: A light-emitting device comprises a plurality of light-emitting elements, comprising a first group light-emitting elements and a second group light-emitting elements; a trench separating the plurality of light-emitting units; a first electrode pad covering the first group light-emitting elements and located on the trench; a second electrode pad covering the second group light-emitting elements and located on the trench; and a cavity located on the trench, formed between the first electrode pad and the protective layer or formed between the second electrode pad and the protective layer.Type: ApplicationFiled: March 30, 2023Publication date: October 5, 2023Inventors: Yong-Yang CHEN, Chao-Hsing CHEN, Chi-Shiang HSU
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Publication number: 20230215998Abstract: A light-emitting device includes a semiconductor stack, first and second insulative layers, a reflective conductive structure, and first and second pads. The semiconductor stack includes a first semiconductor layer, and a mesa having an active region having a second semiconductor layer and formed on the first semiconductor layer. The first insulative layer is formed on the semiconductor stack and has first openings. The reflective conductive structure is formed on the first insulative layer and is electrically connected to the second semiconductor layer through the first openings. The second insulative layer is formed on the reflective conductive structure and includes second openings and a contact area covering portions overlapped with the first and second openings. A first pad is formed on the second insulative layer and electrically connected to the first semiconductor layer. A second pad formed on the second insulative layer and electrically connected to the second semiconductor layer.Type: ApplicationFiled: December 28, 2022Publication date: July 6, 2023Inventors: Chao-Hsing CHEN, Meng-Hsiang HONG, Chi-Shiang HSU, Yen-Liang KUO, Chien-Ya HUNG, Yong-Yang CHEN, Yu-Ling LIN, Xue-Cheng YAO
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Publication number: 20230197904Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate,Type: ApplicationFiled: February 23, 2023Publication date: June 22, 2023Inventors: Chao-Hsing CHEN, Cheng-Lin LU, Chih-Hao CHEN, Chi-Shiang HSU, I-Lun MA, Meng-Hsiang HONG, Hsin-Ying WANG, Kuo-Ching HUNG, Yi-Hung LIN
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Publication number: 20230155056Abstract: A light-emitting device includes a substrate including a top surface; a semiconductor stack including a first semiconductor layer, an active layer and a second semiconductor layer formed on the substrate, wherein a portion of the top surface is exposed; a distributed Bragg reflector (DBR) formed on the semiconductor stack and contacting the portion of the top surface of the substrate; a metal layer formed on the distributed Bragg reflector (DBR), contacting the portion of the top surface of the substrate and being insulated with the semiconductor stack; and an insulation layer formed on the metal layer and contacting the portion of the top surface of the substrate.Type: ApplicationFiled: January 3, 2023Publication date: May 18, 2023Inventors: Che-Hung Lin, Chien-Chih Liao, Chi-Shiang Hsu, De-Shan Kuo, Chao-Hsing Chen
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Publication number: 20230135799Abstract: A light-emitting device includes a first semiconductor layer; a semiconductor pillar formed on the first semiconductor layer, including a second semiconductor layer and an active layer, wherein the semiconductor pillar comprises an outmost periphery; a first contact layer formed on the first semiconductor layer and including a first contact portion and a first extending portion, wherein the first extending portion continuously surrounds an entirety of the outmost periphery of the semiconductor pillar and the first contact portion; a second contact layer formed on the second semiconductor layer; a first insulating layer including multiple first openings exposing the first contact layer and multiple second openings exposing the second contact layer; a first electrode contact layer connected to the first contact portion through the multiple first openings and covering all of the first contact layer; a second electrode contact layer connected to the second contact layer through the multiple second openings.Type: ApplicationFiled: December 29, 2022Publication date: May 4, 2023Inventors: Aurelien GAUTHIER-BRUN, Chao-Hsing CHEN, Chang-Tai HSAIO, Chih-Hao CHEN, Chi-Shiang HSU, Jia-Kuen WANG, Yung-Hsiang LIN
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Patent number: 11621374Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate,Type: GrantFiled: May 14, 2021Date of Patent: April 4, 2023Assignee: EPISTAR CORPORATIONInventors: Chao-Hsing Chen, Cheng-Lin Lu, Chih-Hao Chen, Chi-Shiang Hsu, I-Lun Ma, Meng-Hsiang Hong, Hsin-Ying Wang, Kuo-Ching Hung, Yi-Hung Lin
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Patent number: 11575070Abstract: A light-emitting device includes a substrate including a top surface; a semiconductor stack including a first semiconductor layer, an active layer and a second semiconductor layer formed on the substrate, wherein a portion of the top surface is exposed; a distributed Bragg reflector (DBR) formed on the semiconductor stack and contacting the portion of the top surface of the substrate; a metal layer formed on the distributed Bragg reflector (DBR), contacting the portion of the top surface of the substrate and being insulated with the semiconductor stack; and an insulation layer formed on the metal layer and contacting the portion of the top surface of the substrate.Type: GrantFiled: October 7, 2021Date of Patent: February 7, 2023Assignee: EPISTAR CORPORATIONInventors: Che-Hung Lin, Chien-Chih Liao, Chi-Shiang Hsu, De-Shan Kuo, Chao-Hsing Chen
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Publication number: 20220384687Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer and a second semiconductor layer, wherein in a top view, the semiconductor stack comprises an outer peripheral region and an inner region, the outer peripheral region exposes the first semiconductor layer, and the second semiconductor layer is disposed in the inner region; an outer insulated structure comprising an insulation layer and a protective layer, the insulation layer comprising a plurality of first insulation layer outer openings and a second insulation layer opening; a first electrode covering the plurality of first insulation layer outer openings; and a second electrode covering the second insulation layer opening, wherein the outer insulated structure comprises a total thickness gradually decreasing from the outer peripheral region to the inner region.Type: ApplicationFiled: May 27, 2022Publication date: December 1, 2022Inventors: Chao-Hsing CHEN, Yi-Hung LIN, Kuo-Ching HUNG, Chi-Shiang HSU
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Publication number: 20220367562Abstract: A light-emitting device comprises a substrate comprising a top surface; a plurality of light-emitting units formed on the top surface of the substrate comprising a first light-emitting unit, a second light-emitting unit, and one or a plurality of third light-emitting units, wherein each of the plurality of light-emitting units comprises a first semiconductor layer, an active layer and a second semiconductor layer; an insulating layer comprising a first insulating layer opening and a second insulating layer opening formed on each of the plurality of light-emitting units; a first extension electrode covering the first light-emitting unit, wherein the first extension electrode covers the first insulating layer opening on the first light-emitting unit without covering the second insulating layer opening on the first light-emitting unit; a second extension electrode covering the second light-emitting unit, wherein the second extension electrode covers the second insulating layer opening on the second light-emittinType: ApplicationFiled: July 27, 2022Publication date: November 17, 2022Inventors: Chao-Hsing CHEN, Chi-Shiang HSU, Yong-Yang CHEN
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Patent number: 11437430Abstract: A light-emitting device includes a substrate with light-emitting units. The light-emitting units include a first light-emitting unit, a second light-emitting unit, and one or more of third light-emitting units. Each of the light-emitting units includes a first semiconductor layer, an active layer and a second semiconductor layer. An insulating layer includes a first insulating layer opening and a second insulating layer opening formed on each of the light-emitting units. A first extension electrode covers the first light-emitting unit and the first extension electrode covers the first insulating layer opening on the first light-emitting unit. A second extension electrode covers the second light-emitting unit and the second extension electrode covers the second insulating layer opening on the second light-emitting unit. First and second electrode pads cover different parts of the light-emitting units.Type: GrantFiled: December 30, 2020Date of Patent: September 6, 2022Assignee: EPISTAR CORPORATIONInventors: Chao-Hsing Chen, Chi-Shiang Hsu, Yong-Yang Chen
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Publication number: 20220029054Abstract: A light-emitting device includes a substrate including a top surface; a semiconductor stack including a first semiconductor layer, an active layer and a second semiconductor layer formed on the substrate, wherein a portion of the top surface is exposed; a distributed Bragg reflector (DBR) formed on the semiconductor stack and contacting the portion of the top surface of the substrate; a metal layer formed on the distributed Bragg reflector (DBR), contacting the portion of the top surface of the substrate and being insulated with the semiconductor stack; and an insulation layer formed on the metal layer and contacting the portion of the top surface of the substrate.Type: ApplicationFiled: October 7, 2021Publication date: January 27, 2022Inventors: Che-Hung Lin, Chien-Chih Liao, Chi-Shiang Hsu, De-Shan Kuo, Chao-Hsing Chen
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Patent number: 11145789Abstract: A light-emitting device includes a substrate including a top surface; a semiconductor stack including a first semiconductor layer, an active layer and a second semiconductor layer formed on the substrate, wherein a portion of the top surface is exposed; a distributed Bragg reflector (DBR) formed on the semiconductor stack and contacting the portion of the top surface of the substrate; a metal layer formed on the distributed Bragg reflector (DBR), contacting the portion of the top surface of the substrate and being insulated with the semiconductor stack; and an insulation layer formed on the metal layer and contacting the portion of the top surface of the substrate.Type: GrantFiled: November 4, 2019Date of Patent: October 12, 2021Assignee: EPISTAR CORPORATIONInventors: Che-Hung Lin, Chien-Chih Liao, Chi-Shiang Hsu, De-Shan Kuo, Chao-Hsing Chen
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Publication number: 20210273137Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate,Type: ApplicationFiled: May 14, 2021Publication date: September 2, 2021Inventors: Chao-Hsing CHEN, Cheng-Lin LU, Chih-Hao CHEN, Chi-Shiang HSU, I-Lun MA, Meng-Hsiang HONG, Hsin-Ying WANG, Kuo-Ching HUNG, Yi-Hung LIN
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Publication number: 20210202571Abstract: A light-emitting device comprises a substrate comprising a top surface; a plurality of light-emitting units formed on the top surface of the substrate comprising a first light-emitting unit, a second light-emitting unit, and one or a plurality of third light-emitting units, wherein each of the plurality of light-emitting units comprises a first semiconductor layer, an active layer and a second semiconductor layer; an insulating layer comprising a first insulating layer opening and a second insulating layer opening formed on each of the plurality of light-emitting units; a first extension electrode covering the first light-emitting unit, wherein the first extension electrode covers the first insulating layer opening on the first light-emitting unit without covering the second insulating layer opening on the first light-emitting unit; a second extension electrode covering the second light-emitting unit, wherein the second extension electrode covers the second insulating layer opening on the second light-emittinType: ApplicationFiled: December 30, 2020Publication date: July 1, 2021Inventors: Chao-Hsing CHEN, Chi-Shiang HSU, Yong-Yang CHEN
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Patent number: 11038085Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate,Type: GrantFiled: August 1, 2019Date of Patent: June 15, 2021Assignee: EPISTAR CORPORATIONInventors: Chao-Hsing Chen, Cheng-Lin Lu, Chih-Hao Chen, Chi-Shiang Hsu, I-Lun Ma, Meng-Hsiang Hong, Hsin-Ying Wang, Kuo-Ching Hung, Yi-Hung Lin
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Publication number: 20210135049Abstract: A light-emitting device includes a substrate including a top surface; a semiconductor stack including a first semiconductor layer, an active layer and a second semiconductor layer formed on the substrate, wherein a portion of the top surface is exposed; a distributed Bragg reflector (DBR) formed on the semiconductor stack and contacting the portion of the top surface of the substrate; a metal layer formed on the distributed Bragg reflector (DBR), contacting the portion of the top surface of the substrate and being insulated with the semiconductor stack; and an insulation layer formed on the metal layer and contacting the portion of the top surface of the substrate.Type: ApplicationFiled: November 4, 2019Publication date: May 6, 2021Inventors: Che-Hung Lin, Chien-Chih Liao, Chi-Shiang Hsu, De-Shan Kuo, Chao-Hsing Chen
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Publication number: 20200135978Abstract: A light-emitting device includes a first semiconductor layer; a plurality of semiconductor pillars separated from each other and formed on the first semiconductor layer, the plurality of semiconductor pillars respectively includes a second semiconductor layer and an active layer; a first electrode covering one portion of the plurality of semiconductor pillars; and a second electrode covering another portion of the plurality of semiconductor pillars, wherein the plurality of semiconductor pillars under a covering region of the first electrode are separated from each other by a first space, the plurality of semiconductor pillars outside the covering region of the first electrode are separated from each other by a second space, and the first space is larger than the second space.Type: ApplicationFiled: December 24, 2019Publication date: April 30, 2020Inventors: Aurelien GAUTHIER-BRUN, Chao-Hsing CHEN, Chang-Tai HSAIO, Chih-Hao CHEN, Chi-Shiang HSU, Jia-Kuen WANG, Yung-Hsiang LIN