Patents by Inventor Chi-Shiang HSU
Chi-Shiang HSU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20200135978Abstract: A light-emitting device includes a first semiconductor layer; a plurality of semiconductor pillars separated from each other and formed on the first semiconductor layer, the plurality of semiconductor pillars respectively includes a second semiconductor layer and an active layer; a first electrode covering one portion of the plurality of semiconductor pillars; and a second electrode covering another portion of the plurality of semiconductor pillars, wherein the plurality of semiconductor pillars under a covering region of the first electrode are separated from each other by a first space, the plurality of semiconductor pillars outside the covering region of the first electrode are separated from each other by a second space, and the first space is larger than the second space.Type: ApplicationFiled: December 24, 2019Publication date: April 30, 2020Inventors: Aurelien GAUTHIER-BRUN, Chao-Hsing CHEN, Chang-Tai HSAIO, Chih-Hao CHEN, Chi-Shiang HSU, Jia-Kuen WANG, Yung-Hsiang LIN
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Publication number: 20200044116Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate,Type: ApplicationFiled: August 1, 2019Publication date: February 6, 2020Inventors: Chao-Hsing CHEN, Cheng-Lin LU, Chih-Hao CHEN, Chi-Shiang HSU, I-Lun MA, Meng-Hsiang HONG, Hsin-Ying WANG, Kuo-Ching HUNG, Yi-Hung LIN
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Patent number: 10553759Abstract: A light-emitting device includes a first semiconductor layer; a plurality of semiconductor pillars separated from each other and formed on the first semiconductor layer, the plurality of semiconductor pillars respectively includes a second semiconductor layer and an active layer; a first electrode covering one portion of the plurality of semiconductor pillars; and a second electrode covering another portion of the plurality of semiconductor pillars, wherein the plurality of semiconductor pillars under a covering region of the first electrode are separated from each other by a first space, the plurality of semiconductor pillars outside the covering region of the first electrode are separated from each other by a second space, and the first space is larger than the second space.Type: GrantFiled: July 13, 2018Date of Patent: February 4, 2020Assignee: EPISTAR CORPORATIONInventors: Aurelien Gauthier-Brun, Chao-Hsing Chen, Chang-Tai Hsaio, Chih-Hao Chen, Chi-Shiang Hsu, Jia-Kuen Wang, Yung-Hsiang Lin
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Patent number: 10418513Abstract: A compound semiconductor device includes a substrate, including a top surface, a bottom surface, a side surface connecting the top surface and the bottom surface; and a semiconductor stack formed on the top surface, wherein the side surface includes a first deteriorated surface, a second deteriorated surface, a first crack surface between the first and second deteriorated surfaces, a second crack surface between the first deteriorated surface and the top surface, and a third crack surface between the second deteriorated surface and the bottom surface, wherein the first crack surface is inclined to the first deteriorated surface or the second deteriorated surface; and wherein the second crack surface or the third crack surface is substantially perpendicular to the top surface or the bottom surface.Type: GrantFiled: September 27, 2018Date of Patent: September 17, 2019Assignee: EPISTAR CORPORATIONInventors: Chia Chen Tsai, Chen Ou, Chi Ling Lee, Chi Shiang Hsu
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Patent number: 10361342Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad electrically connected to the first semiconductor layer; a second pad comprising multiple sidewalls electrically connected to the second semiconductor layer; and a metal layer formed on the semiconductor stack, wherein the metal layer surrounds the multiple sidewalls of the second pad and the metal layer is separated from the second pad.Type: GrantFiled: June 26, 2017Date of Patent: July 23, 2019Assignee: EPISTAR CORPORATIONInventors: Chao-Hsing Chen, Jia-Kuen Wang, Wen-Hung Chuang, Tzu-Yao Tseng, Cheng-Lin Lu, Chi-Shiang Hsu, Tsung-Hsun Chiang, Bo-Jiun Hu
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Publication number: 20190027643Abstract: A compound semiconductor device includes a substrate, including a top surface, a bottom surface, a side surface connecting the top surface and the bottom surface; and a semiconductor stack formed on the top surface, wherein the side surface includes a first deteriorated surface, a second deteriorated surface, a first crack surface between the first and second deteriorated surfaces, a second crack surface between the first deteriorated surface and the top surface, and a third crack surface between the second deteriorated surface and the bottom surface, wherein the first crack surface is inclined to the first deteriorated surface or the second deteriorated surface; and wherein the second crack surface or the third crack surface is substantially perpendicular to the top surface or the bottom surface.Type: ApplicationFiled: September 27, 2018Publication date: January 24, 2019Inventors: Chia Chen TSAI, Chen OU, Chi Ling LEE, Chi Shiang HSU
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Publication number: 20190019919Abstract: A light-emitting device includes a first semiconductor layer; a plurality of semiconductor pillars separated from each other and formed on the first semiconductor layer, the plurality of semiconductor pillars respectively includes a second semiconductor layer and an active layer; a first electrode covering one portion of the plurality of semiconductor pillars; and a second electrode covering another portion of the plurality of semiconductor pillars, wherein the plurality of semiconductor pillars under a covering region of the first electrode are separated from each other by a first space, the plurality of semiconductor pillars outside the covering region of the first electrode are separated from each other by a second space, and the first space is larger than the second space.Type: ApplicationFiled: July 13, 2018Publication date: January 17, 2019Inventors: Aurelien GAUTHIER-BRUN, Chao-Hsing CHEN, Chang-Tai HSAIO, Chih-Hao CHEN, Chi-Shiang HSU, Jia-Kuen WANG, Yung-Hsiang LIN
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Patent number: 10134947Abstract: A compound semiconductor device includes a substrate, including a top surface, a bottom surface, a side surface connecting the top surface and the bottom surface; and a semiconductor stack formed on the top surface, wherein the side surface includes a first deteriorated surface, a second deteriorated surface, a first crack surface between the first and second deteriorated surfaces, a second crack surface between the first deteriorated surface and the top surface, and a third crack surface between the second deteriorated surface and the bottom surface, wherein a convex region or a concave region is formed by the first deteriorated surface, the first crack surface and the second crack surface, or the second deteriorated surface, the first crack surface and the third crack surface; and wherein the second crack surface or the third crack surface is substantially perpendicular to the top surface or the bottom surface.Type: GrantFiled: January 16, 2018Date of Patent: November 20, 2018Assignee: EPISTAR CORPORATIONInventors: Chia Chen Tsai, Chen Ou, Chi Ling Lee, Chi Shiang Hsu
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Publication number: 20180158980Abstract: A compound semiconductor device includes a substrate, including a top surface, a bottom surface, a side surface connecting the top surface and the bottom surface; and a semiconductor stack formed on the top surface, wherein the side surface includes a first deteriorated surface, a second deteriorated surface, a first crack surface between the first and second deteriorated surfaces, a second crack surface between the first deteriorated surface and the top surface, and a third crack surface between the second deteriorated surface and the bottom surface, wherein a convex region or a concave region is formed by the first deteriorated surface, the first crack surface and the second crack surface, or the second deteriorated surface, the first crack surface and the third crack surface; and wherein the second crack surface or the third crack surface is substantially perpendicular to the top surface or the bottom surface.Type: ApplicationFiled: January 16, 2018Publication date: June 7, 2018Inventors: Chia Chen TSAI, Chen OU, Chi Ling LEE, Chi Shiang HSU
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Patent number: 9893231Abstract: A compound semiconductor device comprises a substrate, comprising a top surface, a bottom surface, a side surface connecting the top surface and the bottom surface; and a semiconductor stack formed on the top surface, wherein the side surface comprises a first deteriorated surface, a second deteriorated surface, a first crack surface between the first and second deteriorated surfaces, a second crack surface between the first deteriorated surface and the top surface, and a third crack surface between the second deteriorated surface and the bottom surface, wherein the first and second deteriorated surfaces are rougher than at least one of the first crack surface, the second crack surface and the third crack surface; and wherein the second crack surface is about perpendicular to the top surface, and the third crack surface is about perpendicular to the bottom surface.Type: GrantFiled: March 31, 2017Date of Patent: February 13, 2018Assignee: EPISTAR CORPORATIONInventors: Chia Chen Tsai, Chen Ou, Chi Ling Lee, Chi Shiang Hsu
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Publication number: 20170373226Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad electrically connected to the first semiconductor layer; a second pad comprising multiple sidewalls electrically connected to the second semiconductor layer; and a metal layer formed on the semiconductor stack, wherein the metal layer surrounds the multiple sidewalls of the second pad and the metal layer is separated from the second pad.Type: ApplicationFiled: June 26, 2017Publication date: December 28, 2017Inventors: Chao-Hsing CHEN, Jia-Kuen WANG, Wen-Hung CHUANG, Tzu-Yao TSENG, Cheng-Lin LU, Chi-Shiang HSU, Tsung-Hsun CHIANG, Bo-Jiun HU
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Publication number: 20170271547Abstract: A compound semiconductor device comprises a substrate, comprising a top surface, a bottom surface, a side surface connecting the top surface and the bottom surface; and a semiconductor stack formed on the top surface, wherein the side surface comprises a first deteriorated surface, a second deteriorated surface, a first crack surface between the first and second deteriorated surfaces, a second crack surface between the first deteriorated surface and the top surface, and a third crack surface between the second deteriorated surface and the bottom surface, wherein the first and second deteriorated surfaces are rougher than at least one of the first crack surface, the second crack surface and the third crack surface; and wherein the second crack surface is about perpendicular to the top surface, and the third crack surface is about perpendicular to the bottom surface.Type: ApplicationFiled: March 31, 2017Publication date: September 21, 2017Inventors: Chia Chen TSAI, Chen OU, Chi Ling LEE, Chi Shiang HSU
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Patent number: 9548420Abstract: A light-emitting device comprises a substrate comprising a top surface; a light-emitting stack formed on a portion of the top surface of the substrate; and a plurality of pores formed in an area of the substrate, wherein the area is under another portion of the top surface where the light-emitting stack is not formed thereon.Type: GrantFiled: April 20, 2015Date of Patent: January 17, 2017Assignee: EPISTAR CORPORATIONInventors: Chun-Hsiang Tu, De-Shan Kuo, Po-Shun Chiu, Chi-Shiang Hsu
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Publication number: 20160308095Abstract: A light-emitting device comprises a substrate comprising a top surface; a light-emitting stack formed on a portion of the top surface of the substrate; and a plurality of pores formed in an area of the substrate, wherein the area is under another portion of the top surface where the light-emitting stack is not formed thereon.Type: ApplicationFiled: April 20, 2015Publication date: October 20, 2016Inventors: Chun-Hsiang TU, De-Shan KUO, Po-Shun CHIU, Chi-Shiang HSU
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Publication number: 20160276535Abstract: A light emitting device, includes: a substrate, including a top surface, a bottom surface, a first side surface connecting the top surface and the bottom surface, a first group of deteriorated region, and a second group of deteriorated region; and a semiconductor stack formed on the top surface of the substrate, wherein the first side surface includes a first group of convex region and a first group of concave region, wherein the first group of convex region includes the first group of deteriorated region, and the first group of concave region includes the second group of deteriorated region.Type: ApplicationFiled: March 18, 2016Publication date: September 22, 2016Inventors: Tzu-Chin LIN, Ying-Chieh CHEN, Chi-Shiang HSU, De Shan KUO, Chun-Hsiang TU, Po-Shun CHIU