Patents by Inventor Chi-Ta Lu
Chi-Ta Lu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12174529Abstract: A method for manufacturing a semiconductor device is provided. The method includes the following operations. A first layout including a plurality of first features is provided. A modified second layout is determined. The modified second layout includes a plurality of modified features separated from each other, and each of the plurality of modified features respectively overlaps each of the plurality of first features. The modified second layout is outputted to a photomask.Type: GrantFiled: July 6, 2022Date of Patent: December 24, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Wei-Chung Hu, Chi-Ta Lu, Chi-Ming Tsai
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Publication number: 20240386176Abstract: A method includes receiving a pattern layout for a mask, shrinking the pattern layout to form a shrunk pattern, determining centerlines for each of a plurality of features within the shrunk pattern, and snapping the centerline for each of the plurality of features to a grid. The grid represents a minimum resolution size of a mask fabrication tool. The method further includes, after snapping the centerline for each of the plurality of features to the grid, fabricating the mask with the shrunk pattern.Type: ApplicationFiled: July 29, 2024Publication date: November 21, 2024Inventors: Chi-Ta Lu, Chi-Ming Tsai
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Publication number: 20240385507Abstract: A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.Type: ApplicationFiled: July 29, 2024Publication date: November 21, 2024Inventors: Chi-Ta Lu, Chih-Chiang Tu, Cheng-Ming Lin, Ching-Yueh Chen, Wei-Chung Hu, Ting-Chang Hsu, Yu-Tung Chen
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Patent number: 12124163Abstract: A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.Type: GrantFiled: July 27, 2023Date of Patent: October 22, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chi-Ta Lu, Chih-Chiang Tu, Cheng-Ming Lin, Ching-Yueh Chen, Wei-Chung Hu, Ting-Chang Hsu, Yu-Tung Chen
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Publication number: 20240143887Abstract: A method includes: receiving a design layout comprising a feature extending in a peripheral region and a central region of the design layout; determining compensation values associated with a pellicle assembly and the peripheral region according to an exposure distribution in an exposure field of a workpiece; and adjusting the design layout according to the compensation values. The modifying of the shape of the feature according to the compensation values includes: partitioning the peripheral region into compensation zones; and adjusting line widths in the compensation zones of the feature according to the compensation values associated with the respective compensation zones.Type: ApplicationFiled: January 5, 2024Publication date: May 2, 2024Inventors: CHI-TA LU, CHIA-HUI LIAO, YIHUNG LIN, CHI-MING TSAI
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Patent number: 11900040Abstract: A method includes: receiving a design layout comprising a feature extending in a peripheral region and a central region of the design layout; determining compensation values associated with a pellicle assembly and the peripheral region according to an exposure distribution in an exposure field of a workpiece; and adjusting the design layout according to the compensation values. The modifying of the shape of the feature according to the compensation values includes: partitioning the peripheral region into compensation zones, wherein the feature includes first portions disposed within the respective compensation zones and a second portion disposed within the central region; and reducing line widths of the first portions of the feature according to the compensation values associated with the respective compensation zones while keep the second portion of the feature uncompensated.Type: GrantFiled: April 14, 2022Date of Patent: February 13, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Chi-Ta Lu, Chia-Hui Liao, Yihung Lin, Chi-Ming Tsai
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Patent number: 11860530Abstract: A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.Type: GrantFiled: June 30, 2022Date of Patent: January 2, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chi-Ta Lu, Chih-Chiang Tu, Cheng-Ming Lin, Ching-Yueh Chen, Wei-Chung Hu, Ting-Chang Hsu, Yu-Tung Chen
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Publication number: 20230367943Abstract: A method includes receiving a pattern layout for a mask, shrinking the pattern layout to form a shrunk pattern, determining centerlines for each of a plurality of features within the shrunk pattern, and snapping the centerline for each of the plurality of features to a grid. The grid represents a minimum resolution size of a mask fabrication tool. The method further includes, after snapping the centerline for each of the plurality of features to the grid, fabricating the mask with the shrunk pattern.Type: ApplicationFiled: July 27, 2023Publication date: November 16, 2023Inventors: Chi-Ta Lu, Chi-Ming Tsai
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Publication number: 20230367197Abstract: A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.Type: ApplicationFiled: July 27, 2023Publication date: November 16, 2023Inventors: Chi-Ta Lu, Chih-Chiang Tu, Cheng-Ming Lin, Ching-Yueh Chen, Wei-Chung Hu, Ting-Chang Hsu, Yu-Tung Chen
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Patent number: 11763057Abstract: A method includes receiving a pattern layout for a mask, shrinking the pattern layout to form a shrunk pattern, determining centerlines for each of a plurality of features within the shrunk pattern, and snapping the centerline for each of the plurality of features to a grid. The grid represents a minimum resolution size of a mask fabrication tool. The method further includes, after snapping the centerline for each of the plurality of features to the grid, fabricating the mask with the shrunk pattern.Type: GrantFiled: June 25, 2021Date of Patent: September 19, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chi-Ta Lu, Chi-Ming Tsai
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Publication number: 20220367356Abstract: A semiconductor structure includes a substrate including a first surface; a dielectric layer disposed over the first surface of the substrate; a first conductive line surrounded by the dielectric layer and extended over the first surface of the substrate; a second conductive line disposed adjacent to the first conductive line, surrounded by the dielectric layer and extended parallel to the first conductive line; a conductive via disposed over the first conductive line and extended through the dielectric layer; and a cross section of the conductive via substantially parallel to the first surface of the substrate, wherein the cross section of the conductive via is at least partially protruded from the first conductive line towards the second conductive line. Further, a method of manufacturing the semiconductor structure is also disclosed.Type: ApplicationFiled: July 29, 2022Publication date: November 17, 2022Inventors: CHI-TA LU, CHI-MING TSAI
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Publication number: 20220350235Abstract: A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.Type: ApplicationFiled: June 30, 2022Publication date: November 3, 2022Inventors: Chi-Ta Lu, Chih-Chiang Tu, Cheng-Ming Lin, Ching-Yueh Chen, Wei-Chung Hu, Ting-Chang Hsu, Yu-Tung Chen
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Publication number: 20220342296Abstract: A method for manufacturing a semiconductor device is provided. The method includes the following operations. A first layout including a plurality of first features is provided. A modified second layout is determined. The modified second layout includes a plurality of modified features separated from each other, and each of the plurality of modified features respectively overlaps each of the plurality of first features. The modified second layout is outputted to a photomask.Type: ApplicationFiled: July 6, 2022Publication date: October 27, 2022Inventors: WEI-CHUNG HU, CHI-TA LU, CHI-MING TSAI
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Patent number: 11476193Abstract: A semiconductor structure includes a substrate including a first surface; a dielectric layer disposed over the first surface of the substrate; a first conductive line surrounded by the dielectric layer and extended over the first surface of the substrate; a second conductive line disposed adjacent to the first conductive line, surrounded by the dielectric layer and extended parallel to the first conductive line; a conductive via disposed over the first conductive line and extended through the dielectric layer; and a cross section of the conductive via substantially parallel to the first surface of the substrate, wherein the cross section of the conductive via is at least partially protruded from the first conductive line towards the second conductive line. Further, a method of manufacturing the semiconductor structure is also disclosed.Type: GrantFiled: September 20, 2020Date of Patent: October 18, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Chi-Ta Lu, Chi-Ming Tsai
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Patent number: 11429019Abstract: A method for manufacturing a semiconductor device is provided. The method includes providing a first layout including a plurality of first features and a second layout including a plurality of second features; shifting the second layout to generate a plurality of virtual layouts; comparing a score of each of the plurality of virtual layouts and determining a modified second layout having a target score out of the plurality of virtual layouts; and outputting the modified second layout to a photomask.Type: GrantFiled: December 8, 2020Date of Patent: August 30, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Wei-Chung Hu, Chi-Ta Lu, Chi-Ming Tsai
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Patent number: 11402743Abstract: A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.Type: GrantFiled: August 31, 2020Date of Patent: August 2, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chi-Ta Lu, Chih-Chiang Tu, Cheng-Ming Lin, Ching-Yueh Chen, Wei-Chung Hu, Ting-Chang Hsu, Yu-Tung Chen
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Publication number: 20220237361Abstract: A method includes: receiving a design layout comprising a feature extending in a peripheral region and a central region of the design layout; determining compensation values associated with a pellicle assembly and the peripheral region according to an exposure distribution in an exposure field of a workpiece; and adjusting the design layout according to the compensation values. The modifying of the shape of the feature according to the compensation values includes: partitioning the peripheral region into compensation zones, wherein the feature includes first portions disposed within the respective compensation zones and a second portion disposed within the central region; and reducing line widths of the first portions of the feature according to the compensation values associated with the respective compensation zones while keep the second portion of the feature uncompensated.Type: ApplicationFiled: April 14, 2022Publication date: July 28, 2022Inventors: CHI-TA LU, CHIA-HUI LIAO, YIHUNG LIN, CHI-MING TSAI
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Patent number: 11308254Abstract: A method, a non-transitory computer-readable storage medium and a system for adjusting a design layout are provided. The method includes: receiving a design layout including a feature in a peripheral region of the design layout; determining a first compensation value associated with the peripheral region according to an exposure distribution in an exposure field of a workpiece; and adjusting the design layout by modifying a shape of the feature according to the compensation value.Type: GrantFiled: July 23, 2020Date of Patent: April 19, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Chi-Ta Lu, Chia-Hui Liao, Yihung Lin, Chi-Ming Tsai
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Publication number: 20220113621Abstract: Present disclosure provides a mask and a method for fabricating a semiconductor device, the mask includes a target pattern having consecutive edges, a first scattering bar and a second scattering bar extending along a primary direction and adjacent to consecutive edges of the target pattern, wherein the first scattering bar and the second scattering bar partially overlaps in the primary direction, and a connecting segment connecting between a first end of the first scattering bar and a first end of the second scattering bar, wherein the first scattering bar is not parallel to the connecting segment.Type: ApplicationFiled: December 21, 2021Publication date: April 14, 2022Inventors: HUANG-MING WU, JIUN-HAO LIN, JIA-GUEI JOU, CHI-TA LU, CHI-MING TSAI
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Publication number: 20220066312Abstract: A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.Type: ApplicationFiled: August 31, 2020Publication date: March 3, 2022Inventors: Chi-Ta Lu, Chih-Chiang Tu, Cheng-Ming Lin, Ching-Yueh Chen, Wei-Chung Hu, Ting-Chang Hsu, Yu-Tung Chen