Abstract: A LED packaging module includes a plurality of LED chips, a wiring layer, and an encapsulant component. The LED chips are spaced apart, each of which includes chip first, chip second, and chip side surfaces, and an electrode unit. The wiring layer is disposed on the chip second surfaces, has first, second, and side wiring layer surfaces, and is divided into a plurality of wiring parts spaced apart. The first wiring layer surface contacts and is electrically connected to the electrode units. The encapsulant component includes first and second encapsulating layers, covers the chip side surfaces, the chip first surfaces, and the side wiring layer surface, and fills gaps among the wiring parts. Each LED chip has a thickness represented by TA, the first encapsulating layer has a thickness represented by TB, and TA and TB satisfy a relationship: TB/TA?1.

Abstract: A polyimide resin composition, a polyimide resin adhesive layer, a laminate, and a manufacturing method of an electronic component are provided. The polyimide resin composition includes a polyimide resin. The polyimide resin is obtained by the polymerization reaction of a diamine (A) and a tetracarboxylic dianhydride (B). The diamine (A) includes a diamine (A-1) represented by following Formula (I-1) and a diamine (A-2) represented by following Formula (I-2). A molar ratio ((A-1):(A-2)) of the diamine (A-1) to the diamine (A-2) is 0.1:0.2 to 0.6.

Abstract: A method for making a semiconductor device includes forming a first fin structure, a second fin structure, and a third fin structure over a substrate. The first through third fin structures all extend along a first lateral direction, and the second fin structure is disposed between the first and third fin structures. The method includes forming a mold by filling up trenches between neighboring ones of the first through third fin structures with a first dielectric material. The method includes cutting the second fin structure by removing an upper portion of the second fin structure. The method includes replacing the upper portion of the second fin structure with a second dielectric material to form a dielectric cut structure. The method includes recessing the mold to expose upper portions of the first fin structure and the third fin structure, respectively.

Abstract: Provided are a tool and a method for processing a semiconductor wafer. A processing method includes supporting a semiconductor wafer continuously along a periphery of the semiconductor wafer with an electrically grounded conductive member; and spinning the semiconductor wafer, wherein surface charges induced during spinning are dissipated by movement of electrons from the semiconductor wafer to the electrically grounded conductive member at the periphery of the semiconductor wafer.

Abstract: A projection system and a method for selecting an image capturing number for image blending are provided. Multiple projection devices are driven one-by-one to project a pattern; multiple image capturing devices are driven to capture the pattern projected by each projection device, so as to obtain multiple image capturing results corresponding to the image capturing devices. Finally, at least one of the image capturing devices is selected to serve as an image capturing source for image blending based on the image capturing results. An image capturing range is identified through projected patterns, and an effective range is calculated and then selected for use, which is used for calculations required for automatic blending, so as to avoid a problem of being unable to maintain blending and merging due to environmental influences or failure of the image capturing device when performing image recognition and calculation required for automatic blending and merging.

Abstract: A method includes attaching semiconductor devices to an interposer structure, attaching the interposer structure to a first carrier substrate, attaching integrated passive devices to the first carrier substrate, forming an encapsulant over the semiconductor devices and the integrated passive devices, debonding the first carrier substrate, attaching the encapsulant and the semiconductor devices to a second carrier substrate, forming a first redistribution structure on the encapsulant, the interposer structure, and the integrated passive devices, wherein the first redistribution structure contacts the interposer structure and the integrated passive devices, and forming external connectors on the first redistribution structure.

Abstract: Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first terminal coupled to a substrate of the semiconductor structure. The first terminal comprises a tunneling layer formed on the substrate, a first conductive structure formed on the tunneling layer, and a dielectric structure formed on a top surface and on a first curved side surface of the first conductive structure. The semiconductor structure includes a second terminal coupled to the substrate. The second terminal comprises a second conductive structure formed on an isolation structure. The second conductive structure has a second curved side surface, and the dielectric structure is disposed between the first curved side surface and the second curved side surface.

Abstract: In an embodiment, a method includes: depositing a gate dielectric layer on a first fin and a second fin, the first fin and the second fin extending away from a substrate in a first direction, a distance between the first fin and the second fin decreasing along the first direction; depositing a sacrificial layer on the gate dielectric layer by exposing the gate dielectric layer to a self-limiting source precursor and a self-reacting source precursor, the self-limiting source precursor reacting to form an initial layer of a material of the sacrificial layer, the self-reacting source precursor reacting to form a main layer of the material of the sacrificial layer; annealing the gate dielectric layer while the sacrificial layer covers the gate dielectric layer; after annealing the gate dielectric layer, removing the sacrificial layer; and after removing the sacrificial layer, forming a gate electrode layer on the gate dielectric layer.

Abstract: A storage environment monitoring device is capable of measuring and/or monitoring various parameters of an environment inside a storage area, such as airflow, temperature, and humidity, to increase the storage quality of semiconductor components stored in the storage area. The storage environment monitoring device is capable of measuring and/or monitoring the parameters of the environment inside the storage area without having to open an enclosure that is storing the semiconductor components in the storage area. This reduces exposure of the semiconductor components to contamination and other environmental factors.

Abstract: A semiconductor structure includes: a first conductive layer arranged over a substrate; a dielectric layer arranged over the first conductive layer; a second conductive layer arranged within the dielectric layer and electrically connected to the first conductive layer, the second conductive layer including a sidewall distant from the dielectric layer by a width; and a first blocking layer over a surface of the first conductive layer between the second conducive layer and the dielectric layer. The first blocking layer includes at least one element of a precipitant.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a first n-type transistor having a first threshold voltage and including a first gate dielectric layer, and a second n-type transistor having a second threshold voltage and including a second gate dielectric layer. The first threshold voltage is lower than the second threshold. Each of the first gate dielectric layer and the second gate dielectric layer contains fluorine and hafnium. The first gate dielectric layer has a first average fluorine concentration and a first average hafnium concentration. The second gate dielectric layer has a second average fluorine concentration and a second average hafnium concentration. A first ratio of the first average fluorine concentration to the first average hafnium concentration is greater than and a second ratio of the second average fluorine concentration to the second average hafnium concentration.

Abstract: A method includes forming a first fin structure and a second fin structure protruding from a substrate, forming a dielectric fin between the first fin structure and the second fin structure, recessing the dielectric fin to form a trench between the first fin structure and the second fin structure, and depositing a first dielectric layer on sidewall surfaces of the trench and on a top surface of the recessed dielectric fin. After the depositing the first dielectric layer, a second dielectric layer is deposited in the trench. The method further includes depositing a third dielectric layer to cap the second dielectric layer in the trench, and forming a gate structure on the first fin structure, the second fin structure, and the third dielectric layer.

Abstract: Some implementations described herein provide a method that includes loading, from a load port and into a first buffer of a multiple-buffer overhead hoist transport (OHT) vehicle, a first transport carrier storing one or more processed wafers. The method includes unloading to the load port, while the first buffer retains the first transport carrier, and from a second buffer of the multiple-buffer OHT vehicle, a second transport carrier storing one or more wafers for processing. In other implementations, the method includes loading, into a first buffer of the multiple-buffer OHT vehicle, a first transport carrier storing one or more wafers for processing, while a semiconductor processing tool, associated with a load port, is processing one or more wafers associated with a second transport carrier. The method includes positioning the multiple-buffer OHT vehicle above the load port while the multiple-buffer OHT vehicle retains the first transport carrier in the first buffer.

Abstract: An email processing device includes a link retrieval module, a link verification module and a link testing module. The link retrieval module receives an email and retrieves a link corresponding to the email. The link verification module receives the link, and outputs the link or generates a forwarding link according to the linkage state of the link. The link testing module receives the link, and perform a protective mechanism test on the link to generate a test result corresponding to the email. The link retrieval module receives the forwarding link, and retrieves the link corresponding to the forwarding link.

Abstract: A slurry composition, a semiconductor structure and a method for forming a semiconductor structure are provided. The slurry composition includes a slurry and a precipitant dispensed in the slurry. The semiconductor structure comprises a blocking layer including at least one element of the precipitant. The method includes using the slurry composition with the precipitant to polish a conductive layer and causing the precipitant to flow into the gap.

Abstract: A package structure includes a plurality of semiconductor dies, an insulating encapsulant, a redistribution layer and a plurality of connecting elements. The insulating encapsulant is encapsulating the plurality of semiconductor dies. The redistribution layer is disposed on the insulating encapsulant in a build-up direction and electrically connected to the plurality of semiconductor dies, wherein the redistribution layer includes a plurality of conductive lines, a plurality of conductive vias and a plurality of dielectric layers alternately stacked, and a lateral dimension of the plurality of conductive vias increases along the build-up direction. The connecting elements are disposed in between the redistribution layer and the semiconductor dies, wherein the connecting elements includes a body portion joined with the semiconductor dies and a via portion joined with the redistribution layer, wherein a lateral dimension of the via portion decreases along the build-up direction.

Abstract: Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first terminal coupled to a substrate of the semiconductor structure, with the first terminal including a first portion of a tunneling layer formed on the substrate, and a first gate formed on the first portion of the tunneling layer. The semiconductor structure includes a second terminal coupled to the substrate and adjacent to the first terminal, with the second terminal including a second portion of the tunneling layer formed on the substrate, a second gate formed on the second portion of the tunneling layer, and a dielectric structure formed on a top surface and side surfaces of the second gate. The semiconductor structure includes a third terminal coupled to an insulating structure and adjacent to the second terminal, with the third terminal including, a third gate formed on the insulating structure.

Abstract: A mask includes a first surface and a second surface opposite to the first surface, and has a total etching area and clearance areas. The mask has vias in the total etching area, and each via communicates the first surface with the second surface. The clearance areas are arranged in the total etching area, and the vias surround each clearance area. Each clearance area further has a through hole therein communicating the first surface with the second surface. Each clearance area is in a shape of a circle or a polygon. When each interior angle of the polygon is less than 120 degrees, the clearance area further comprises a first clearance region and a second clearance region surrounded by the first clearance region, and the mask has a plurality of etched grooves in the first clearance region. The disclosure further provides a manufacturing method of a mask.

Abstract: A semiconductor device includes a fin-shaped structure on a substrate, a single diffusion break (SDB) structure in the fin-shaped structure to divide the first fin-shaped structure into a first portion and a second portion, and more than two gate structures on the SDB structure. Preferably, the more than two gate structures include a first gate structure, a second gate structure, a third gate structure, and a fourth gate structure disposed on the SDB structure.

Abstract: A semiconductor device includes a pair of fin structures on a semiconductor substrate, each including a vertically stacked plurality of channel layers, a dielectric fin extending in parallel to and between the fin structures, and a gate structure on and extending perpendicularly to the fin structures, the gate structure engaging with the plurality of channel layers. The dielectric fin includes a fin bottom and a fin top over the fin bottom. The fin bottom has a top surface extending above a bottom surface of a topmost channel layer. The fin top includes a core and a shell, the core having a first dielectric material, the shell surrounding the core and having a second dielectric material different from the first dielectric material.