Abstract: A micro light emitting device includes an epitaxial structure, a conductive layer, and a first insulating layer. The epitaxial structure has a first surface and a second surface opposite to the first surface, and includes a first semiconductor layer, an active layer and a second semiconductor layer that are arranged in such order in a direction from the first surface to the second surface. The conductive layer is formed on a surface of the first semiconductor layer away from the active layer. The first insulating layer is formed on the surface of the first semiconductor layer away from the active layer, and exposes at least a part of the conductive layer.

Abstract: Disclosed herein are methods for improving gastrointestinal barrier function, alleviating a gastrointestinal barrier dysfunction-associated disorder, and inhibiting growth of enteric pathogenic bacteria using a composition containing Lactobacillus rhamnosus MP108, Bifidobacterium longum subsp. infantis BLI-02, and Bifidobacterium animalis subsp. lactis BB-115, which are deposited at the China General Microbiological Culture Collection Center (CGMCC) respectively under accession numbers CGMCC 21225, CGMCC 15212, and CGMCC 21840. A number ratio of Lactobacillus rhamnosus MP108, Bifidobacterium longum subsp. infantis BLI-02, and Bifidobacterium animalis subsp. lactis BB-115 ranges from 1:0.2:0.67 to 1:9:9.

Abstract: Semiconductor devices and methods of forming the same are provided. In some embodiments, a method includes receiving a workpiece having a redistribution layer disposed over and electrically coupled to an interconnect structure. In some embodiments, the method further includes patterning the redistribution layer to form a recess between and separating a first conductive feature and a second conductive feature of the redistribution layer, where corners of the first conductive feature and the second conductive feature are defined adjacent to and on either side of the recess. The method further includes depositing a first dielectric layer over the first conductive feature, the second conductive feature, and within the recess. The method further includes depositing a nitride layer over the first dielectric layer. In some examples, the method further includes removing portions of the nitride layer disposed over the corners of the first conductive feature and the second conductive feature.

Abstract: A metal mask includes: a mask body having two opposite first side edges along a first direction and two opposite second side edges along a second direction, and each of the first side edges having a first length. The mask body includes an open slot region, two first fixing regions, and two first clamping regions, where the two first fixing regions are positioned on two opposite sides of the open slot region, respectively, and each of the first clamping regions is positioned between each of the first fixing regions and each of the first side edges. A first gap is formed in each of the first side edges, the first gap has a first opening length in the first direction, and a ratio of the first opening length to the first length being between 0.2 and 0.8. The metal mask may improve the problem of wrinkles.

Abstract: The present invention discloses an anti-aging composition, which includes: (a) isolated lactic acid bacterial strains or a fermented product thereof; and (b) an excipient, a diluent, or a carrier; wherein the isolated lactic acid bacterial strains include: Bifidobacterium bifidum VDD088 strains, Bifidobacterium breve Bv-889 strains, and Bifidobacterium longum BLI-02 strains. The present invention further provides a method for preventing aging by administering the foregoing anti-aging composition to a subject in need thereof.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a channel layer, a barrier layer, a compound semiconductor layer, a gate electrode, and a stack of dielectric layers. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The compound semiconductor layer is disposed on the barrier layer. The gate electrode is disposed on the compound semiconductor layer. The stack of dielectric layers is disposed on the gate electrode. The stack of dielectric layers includes layers having different etching rates.

Abstract: A metal mask has a first surface, a second surface opposite to the first surface, first and second openings provided on the first and second surfaces respectively, and first and second through holes communicating with the first and second openings respectively. The juncture of the first and second through holes further has an annular protrusion. The mask satisfies the in equations: 1 ? ?m 2 < 1 2 × W × H < 15 ? ?m 2 ? and ? 30 ? ° < ? < 65 ? ° , wherein W is the horizontal distance between an edge of the first opening and an imaginary connecting line passing through an edge of the second opening and an end edge of the annular protrusion, H is the vertical distance between the end edge of the annular protrusion and the first surface, and ? is the included angle between the imaginary connecting line and an imaginary extending plane of the first surface. The metal mask is effective in reducing shadow effect, thereby improving evaporation quality.

Abstract: An electronic device package includes a circuit layer, a first semiconductor die, a second semiconductor die, a plurality of first conductive structures and a second conductive structure. The first semiconductor die is disposed on the circuit layer. The second semiconductor die is disposed on the first semiconductor die, and has an active surface toward the circuit layer. The first conductive structures are disposed between a first region of the second semiconductor die and the first semiconductor die, and electrically connecting the first semiconductor die to the second semiconductor die. The second conductive structure is disposed between a second region of the second semiconductor die and the circuit layer, and electrically connecting the circuit layer to the second semiconductor die.

Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate and a first gate electrode disposed on the substrate and located in a first region of the semiconductor device. The semiconductor device also includes a first sidewall structure covering the first gate electrode. The semiconductor device further includes a protective layer disposed between the first gate electrode and the first sidewall structure. In addition, the semiconductor device includes a second gate electrode disposed on the substrate and located in a second region of the semiconductor device. The semiconductor device also includes a second sidewall structure covering a lateral surface of the second gate electrode.

Abstract: In an embodiment, a device includes: an integrated circuit die; an encapsulant at least partially surrounding the integrated circuit die, the encapsulant including fillers having an average diameter; a through via extending through the encapsulant, the through via having a lower portion of a constant width and an upper portion of a continuously decreasing width, a thickness of the upper portion being greater than the average diameter of the fillers; and a redistribution structure including: a dielectric layer on the through via, the encapsulant, and the integrated circuit die; and a metallization pattern having a via portion extending through the dielectric layer and a line portion extending along the dielectric layer, the metallization pattern being electrically coupled to the through via and the integrated circuit die.

Abstract: A method for operating a conveying system is provided. An overhead hoist transport (OHT) vehicle is provided, wherein the OHT vehicle includes a gripping member configured to grip and hold a carrier, and a receiver configured to receive a signal. The signal is transmitted to the receiver of the OHT vehicle. The OHT vehicle is moved toward the carrier, and the carrier is gripped by the gripping member of the OHT vehicle. A lifting force is determined based on a weight of a carrier, a number of workpieces in the carrier, or a vertical distance between the OHT vehicle and the carrier, and the lifting force is applied to the carrier.

Abstract: The present disclosure relates to a system, a method and a computer-readable medium for anomaly detection. The method includes obtaining latency data of a first endpoint, obtaining latency data of a second endpoint, generating, by a representation learning model, reconstruction error distribution data of the latency data of the first endpoint according to the latency data of the first endpoint and the latency data of the second endpoint, obtaining new latency data of the first endpoint, obtaining new latency data of the second endpoint, generating, by the representation learning model, a reconstruction error of the new latency data of the first endpoint according to the new latency data of the first endpoint and the new latency data of the second endpoint, and generating an anomaly score for the first endpoint according to a dispersion characteristic of the reconstruction error distribution data and the reconstruction error.

Abstract: The present invention provides an audio control circuit comprising an USB interface and a processing circuit is disclosed. The USB interface is used to connect to a host device, and the processing circuit is configured to perform enumeration with the host device via the USB interface, and the processing circuit is further configured to determine if the host device operates in a BIOS stage or an operating system stage to generate a control signal according to packets of the enumeration. When the processing circuit determines that the host device operates in the BIOS stage, the processing circuit generates the control signal to enable a de-pop circuit; and when the processing circuit determines that the host device operates in the operating system stage, the processing circuit generates the control signal to disable the de-pop circuit.

Abstract: A system for a semiconductor fabrication facility comprises a transporting tool configured to move a carrier, a first manufacturing tool configured to accept the carrier facing in a first direction, a second manufacturing tool configured to accept the carrier facing in the second direction, and an orientation tool. The carrier is moved to the orientation tool by the transporting tool prior to being moved to the first manufacturing tool or the second manufacturing tool by the transporting tool. The orientation tool rotates the carrier so that the carrier is accepted by the first manufacturing tool or the second manufacturing tool. The transporting tool, the first manufacturing tool, the second manufacturing tool and the orientation tool are physically separated from each other.

Abstract: A method includes removing a dummy gate stack to form a trench between gate spacers, depositing a gate dielectric extending into the trench, and performing a first treatment process on the gate dielectric. The first treatment process is performed using a fluorine-containing gas. A first drive-in process is then performed to drive fluorine in the fluorine-containing gas into the gate dielectric. The method further includes performing a second treatment process on the gate dielectric, wherein the second treatment process is performed using the fluorine-containing gas, and performing a second drive-in process to drive fluorine in the fluorine-containing gas into the gate dielectric. After the second drive-in process, conductive layers are formed to fill the trench.

Abstract: A projection system, including a projection target, a projection device, an image capturing device, and a processor circuit, is provided. The projection target includes a reflective surface and an anti-reflective film disposed on the reflective surface. The anti-reflective film defines a projection range. The image capturing device captures a first captured image containing the projection target. The first captured image includes an image of the anti-reflective film. The processor circuit determines a position and a shape of the anti-reflective film in the first captured image according to the first captured image. The projection device projects a projection image on the projection target. The projection device adjusts the projection image according to the position and the shape of the anti-reflective film, and correspondingly adjusts the projection image to the projection range. In addition, an image projection method is also provided.

Abstract: The disclosure provides an image blending method. The method includes projecting a plurality of images onto a projection surface, respectively, wherein an image of the first portion of the first image and an image of the first portion of the second image projected onto the projection surface overlap each other in the first overlapping area on the projection surface; the image parameters of all pixels of the first non-overlapping area and the second non-overlapping area are adjusted according to the position of the first non-overlapping area and the position of the second non-overlapping area, such that the black-level brightness of the first non-overlapping image in the first non-overlapping area of the first image and the black-level brightness of the second non-overlapping image in the second non-overlapping area of the second image are close to the black-level brightness of the first overlapping image in the first overlapping area.

Abstract: A cholesteric liquid crystal display device and a control method for reducing inrush current when clearing the screen. The cholesteric liquid crystal display device includes a cholesteric liquid crystal display panel and a liquid crystal drive unit. The cholesteric liquid crystal display panel has a plurality of pixel matrix. After the liquid crystal drive unit receives a data latch enable signal, it applies a reset voltage to the plurality of pixel matrix to clear the screen displayed on the cholesteric liquid crystal display panel. The input time of the data latch enable signal received by the liquid crystal driving unit is different, and the corresponding signal time portion is shifted with each other.

Abstract: A fine metal mask includes a plate including a first and a second surfaces. The first surface has a first inner edge defining a first opening. The second surface has a second inner edge defining a second opening communicated with the first opening. The plate includes a first and a second curved surfaces respectively connecting the first surface inside the first opening and the second surface inside the second opening. The first and the second curved surfaces connect with a third inner edge defining a third opening smaller than the first and the second openings. The third inner edge includes a first straight edge, a second straight edge and a circular edge. The first and the second straight edges form an included angle. The circular edge has a radius smaller than or equal to 15 microns and connects between the first and the second straight edges.

Abstract: A projection system and a self-adaptive adjustment method are provided. The projection system includes a projection device, an image capturing device, and a processing device. The projection device sequentially projects sub-pattern arrays of a pattern array to a projection region of a projection surface. The image capturing device sequentially captures the sub-pattern arrays projected on the projection surface to output pattern images. The processing device analyzes the pattern images to obtain pattern coordinates and a pattern order of projected patterns in each pattern image. The processing device determines at least a part of the projected patterns to be effective patterns according to the pattern coordinates and the pattern order, and adjusts the projection device according to the effective patterns. The projection system and the self-adaptive adjustment method provide good projection quality.