Abstract: An interconnect structure includes a dielectric layer, a first conductive feature, a hard mask layer, a conductive layer, and a capping layer. The first conductive feature is disposed in the dielectric layer. The hard mask layer is disposed on the first conductive feature. The conductive layer includes a first portion and a second portion, the first portion of the conductive layer is disposed over at least a first portion of the hard mask layer, and the second portion of the conductive layer is disposed over the dielectric layer. The hard mask layer and the conductive layer are formed by different materials. The capping layer is disposed on the dielectric layer and the conductive layer.

Abstract: A miniature optoelectronic signal conversion and transmission device includes an optoelectronic signal module and an optical-fiber connector combined together. The optoelectronic signal module includes a silicon substrate that is electrically connected with a driver chip and an optoelectronic signal processor board arranged in a stacked package. The silicon substrate includes light-transmitting and light-receiving elements. Optical fibers provided in the optical-fiber connector have a signal receiving/transmitting terminal forming a refraction surface corresponding to and spaced from the light-transmitting and light-receiving elements. When an optical signal is transmitted through the optical fibers to the refraction surface, the optical signal is redirected for transmitting toward the light-transmitting and light-receiving elements.

Abstract: A method for depositing a phosphorus doped silicon arsenide film is disclosed. The method may include, providing a substrate within a reaction chamber, heating the substrate to a deposition temperature, exposing the substrate to a silicon precursor, an arsenic precursor, and a phosphorus dopant precursor, and depositing the phosphorus doped silicon arsenide film over a surface of the substrate. Semiconductor device structures including a phosphorus doped silicon arsenide film deposited by the methods of the disclosure are also provided.

Abstract: A joint structure of a composite bicycle frame includes a base layer and at least one reinforcing layer. The base layer is made of a first polymeric matrix material doped with a plurality of first fibers. The first fibers have random fiber orientation, and the base layer has a first thickness. The reinforcing layer is adhesively connected to the base layer. The reinforcing layer is made of a second polymeric matrix material doped with a plurality of second fibers. The second fibers have a single fiber orientation. The reinforcing layer has a second thickness which is smaller than the first thickness of the base layer.

Abstract: Embodiments of the present invention generally relate to methods for removing contaminants and native oxides from substrate surfaces. The methods generally include removing contaminants disposed on the substrate surface using a plasma process, and then cleaning the substrate surface by use of a remote plasma assisted dry etch process.

Abstract: A method for depositing a phosphorus doped silicon arsenide film is disclosed. The method may include, providing a substrate within a reaction chamber, heating the substrate to a deposition temperature, exposing the substrate to a silicon precursor, an arsenic precursor, and a phosphorus dopant precursor, and depositing the phosphorus doped silicon arsenide film over a surface of the substrate. Semiconductor device structures including a phosphorus doped silicon arsenide film deposited by the methods of the disclosure are also provided.

Abstract: Embodiments of the present invention generally relate to methods for removing contaminants and native oxides from substrate surfaces. The methods generally include removing contaminants disposed on the substrate surface using a plasma process, and then cleaning the substrate surface by use of a remote plasma assisted dry etch process.

Abstract: A method for depositing a phosphorus doped silicon arsenide film is disclosed. The method may include, providing a substrate within a reaction chamber, heating the substrate to a deposition temperature, exposing the substrate to a silicon precursor, an arsenic precursor, and a phosphorus dopant precursor, and depositing the phosphorus doped silicon arsenide film over a surface of the substrate. Semiconductor device structures including a phosphorus doped silicon arsenide film deposited by the methods of the disclosure are also provided.

Abstract: A method for depositing a phosphorus doped silicon arsenide film is disclosed. The method may include, providing a substrate within a reaction chamber, heating the substrate to a deposition temperature, exposing the substrate to a silicon precursor, an arsenic precursor, and a phosphorus dopant precursor, and depositing the phosphorus doped silicon arsenide film over a surface of the substrate. Semiconductor device structures including a phosphorus doped silicon arsenide film deposited by the methods of the disclosure are also provided.

Abstract: Embodiments of the present invention generally relate to methods for removing contaminants and native oxides from substrate surfaces. The methods generally include removing contaminants disposed on the substrate surface using a plasma process, and then cleaning the substrate surface by use of a remote plasma assisted dry etch process.

Abstract: Embodiments of the present invention generally relate to methods for removing contaminants and native oxides from substrate surfaces. The methods generally include removing contaminants disposed on the substrate surface using a plasma process, and then cleaning the substrate surface by use of a remote plasma assisted dry etch process.

Abstract: A connector fixing structure having a transmission plug and an adapter plug; wherein the transmission plug is respectively set with a first magnetic element, a guide slot, and a positioning groove; and the adapter plug is respectively set with a signal jack, a second magnetic element, a protruding block, and a resilient piece at the positions of the connection section. The first plug of small size set in the transmission plug can electrically connected with the signal jack. And, the first magnetic element and the second magnetic element can be mutually adsorbed, the protruding block can be mutually combined, and the positioning groove can be mutually engaged with the resilient piece. Therefore, the multi-point stable combination between the transmission plug and the adapter plug is achieved. It also enables the first plug to perform the connection ability after the second plug penetrates through the fitting hole of smaller size.

Abstract: A fast connector pull-to-penetrate device includes a pull-through and penetration device that includes two flexible extension arms, each having a free end formed with a through aperture. A cap is formed with a coupling opening in each of two opposite sides thereof. The pull-through and penetration device is selectively fit to a transmission cable at an end of a connector and the cap is attached to the connector and fit to a signal terminal of the connector, such that the extension arms are respectively received through the coupling openings of the cap to have the through apertures moved past the two coupling openings and located frontward of the cap. A rope is tied to the through apertures of the extension arms to allow the pull-through and penetration device, to be moved through a number of installation holes through pulling of the rope.

Abstract: A method and device for harvesting and storing solar energy is provided. The device converts solar energy to electrical energy via the photovoltaic effect. The device includes a pair of electrodes, at least one of which is transparent to allow solar energy to pass through. A medium is disposed between the electrodes which exhibits a combination of photovoltaic and ferroelectric properties. When solar energy passes through the transparent electrode and is received by the medium, electron-hole pairs establish a voltage potential between electrodes in the device via the photovoltaic effect. The voltage potential may be retained and the mobile charge may be stored in the absence of solar energy via the ferroelectric effect.

Abstract: A joint structure of a composite bicycle frame includes a base layer and at least one reinforcing layer. The base layer is made of a first polymeric matrix material doped with a plurality of first fibers. The first fibers have random fiber orientation, and the base layer has a first thickness. The reinforcing layer is adhesively connected to the base layer. The reinforcing layer is made of a second polymeric matrix material doped with a plurality of second fibers. The second fibers have a single fiber orientation. The reinforcing layer has a second thickness which is smaller than the first thickness of the base layer.

Abstract: A carbon fiber wheel rim is disclosed. The carbon fiber wheel rim is corresponding disposed between two braking elements, and includes a rim body and a reinforcing layer. The rim body is made of a carbon fiber composites material. The reinforcing layer is disposed on a surface of the rim body, wherein the reinforcing layer is made of a fibrous veil having an isotropy.

Abstract: A master-slave flip-flop includes a master latch, a slave latch, a first logic gate and a signal transition detector. The first logic gate is receiving a reference clock and a first control clock, and outputting a first trigger signal to control one of the master latch and the slave latch, which are connected with a logic circuit, to switch to an opaque state or a transparent state, wherein the other one of the master latch and the slave latch is switched to an opaque state or a transparent state according to the reference clock. The above-mentioned master-slave flip-flop can correct sampling when a timing error occurs.

Abstract: Embodiments of the present invention generally relate to methods for removing contaminants and native oxides from substrate surfaces. The methods generally include removing contaminants disposed on the substrate surface using a plasma process, and then cleaning the substrate surface by use of a remote plasma assisted dry etch process.

Abstract: Embodiments of the present invention generally relate to methods for removing contaminants and native oxides from substrate surfaces. The methods generally include removing contaminants disposed on the substrate surface using a plasma process, and then cleaning the substrate surface by use of a remote plasma assisted dry etch process.

Abstract: A master-slave flip-flop includes a master latch, a slave latch, a first logic gate and a signal transition detector. The first logic gate is receiving a reference clock and a first control clock, and outputting a first trigger signal to control one of the master latch and the slave latch, which are connected with a logic circuit, to switch to an opaque state or a transparent state, wherein the other one of the master latch and the slave latch is switched to an opaque state or a transparent state according to the reference clock. The above-mentioned master-slave flip-flop can correct sampling when a timing error occurs.