Abstract: A high bright LED comprises a substrate, a conductive layer, a first semiconductor layer, a luminous layer, a second semiconductor layer, a first electrode, a second electrode and an insulation structure. The conductive layer, the first semiconductor layer, the luminous layer and the second semiconductor layer are disposed upwards from an upper solder layer of the substrate in order. The first electrode is electrically connected to the conductive layer The second electrode penetrates through the conductive layer, the first semiconductor layer and the luminous layer to make the upper solder and the second semiconductor layer electrically connected. The insulation structure comprises at least two passivation layers peripherally wrapping the second electrode. The thicknesses of the at least two passivation layers are conformed to the distributed Bragg reflection technique to make the passivation layers jointly used as a reflector with high reflectance.

Abstract: A light-emitting diode chip structure including a conductive substrate, a semiconductor stacking layer and a patterned seed crystal layer is provided. The conductive substrate has a surface. The surface has a first region and a second region alternately distributed over the surface. The semiconductor stacking layer is disposed on the conductive substrate, and the surface of the conductive substrate faces the semiconductor stacking layer. The patterned seed crystal layer is disposed on the first region of the surface of the conductive substrate and between the conductive substrate and the semiconductor stacking layer. The patterned seed crystal layer separates the semiconductor stacking layer from the first region. The semiconductor stacking layer covers the patterned seed crystal layer and the second region, and is electrically connected to the conductive substrate through the second region. A fabrication method of the light-emitting diode chip structure is also provided.

Abstract: A manufacturing method of a nitride crystalline film includes following steps. First, a substrate is provided. Next, a first nitride crystalline film is formed on the substrate. A patterned mask is then formed on the first nitride crystalline film. The patterned mask covers a first part of the first nitride crystalline film and exposes a second part of the first nitride crystalline film. Afterwards, the second part is etched, and the first part is maintained. After that, the patterned mask is removed. The first part is then etched to form a plurality of nitride crystal nuclei. Next, a second nitride crystalline film is formed on the substrate, and the second nitride crystalline film is made to cover the nitride crystal nuclei. A nitride film and a substrate structure are also provided.

Abstract: A flexible light-emitting apparatus including a side light-emitting flexible light guide rod, two light emitting diodes, and two lenses is provided. The side light-emitting flexible light guide rod has a first end, a second end opposite to the first end, and a light-emitting surface connecting the first and the second ends. The LEDs are respectively disposed beside the first end and the second end and adapted for emitting light beams toward the side light-emitting flexible light guide rod, respectively. One of the lenses is located between the first end and the LED disposed beside the first end, and the other lens is located between the second end and the LED disposed beside the second end. Each of the light beams enters the side light-emitting flexible light guide rod through the corresponding lens and is transmitted to the outside of the side light-emitting flexible light guide rod through the light-emitting surface.

Abstract: A light emitting diode structure including a substrate, a strain-reducing seed layer, an epitaxial layer, a first electrode and a second electrode is provided. The strain-reducing seed layer having a plurality of clusters is disposed on the substrate, and the material of the clusters is selected from a group consisting of aluminum nitride, magnesium nitride and indium nitride. The epitaxial layer includes a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer. The first electrode is disposed on the exposed first type doped semiconductor layer and electrically connected thereto. The second electrode is disposed on the second type doped semiconductor layer and electrically connected thereto.

Abstract: A flexible light-emitting apparatus including a side light-emitting flexible light guide rod, two light emitting diodes, and two lenses is provided. The side light-emitting flexible light guide rod has a first end, a second end opposite to the first end, and a light-emitting surface connecting the first and the second ends. The LEDs are respectively disposed beside the first end and the second end and adapted for emitting light beams toward the side light-emitting flexible light guide rod, respectively. One of the lenses is located between the first end and the LED disposed beside the first end, and the other lens is located between the second end and the LED disposed beside the second end. Each of the light beams enters the side light-emitting flexible light guide rod through the corresponding lens and is transmitted to the outside of the side light-emitting flexible light guide rod through the light-emitting surface.

Abstract: A manufacturing method of a nitride crystalline film includes following steps. First, a substrate is provided. Next, a first nitride crystalline film is formed on the substrate. A patterned mask is then formed on the first nitride crystalline film. The patterned mask covers a first part of the first nitride crystalline film and exposes a second part of the first nitride crystalline film. Afterwards, the second part is etched, and the first part is maintained. After that, the patterned mask is removed. The first part is then etched to form a plurality of nitride crystal nuclei. Next, a second nitride crystalline film is formed on the substrate, and the second nitride crystalline film is made to cover the nitride crystal nuclei. A nitride film and a substrate structure are also provided.

Abstract: An illuminating device for machining tools is disclosed. A machining tool is installed with an illuminating device that uses a single LED prepared using the multi chip single module technique to provide high-power light. This elongates the lifetime of the illuminating device and has the advantages of power-saving and low temperature. The light thus produced does not have UV and IR components. In addition to no radiation injury to human bodies, the invention also avoids overlapped shadows in the case of multiple LED sources. Such a design of the cold and single light source can effectively bad influences on the precision of objects 31 being processed.

Abstract: This invention provides an electrical appliance housing comprising a main body and a lid. At least one magnetic controlling assembly is provided on the housing, comprising a sliding key that shifts in a sliding groove. The sliding key further includes a pair of controlling magnets with opposing magnetic polarity. An actuating magnet is installed inside of the housing and corresponds to a specific controlling key of the electrical appliance. Shifting the sliding key will produce a magnetic force relative to the actuating magnet, and this force in turn activates the controlling key of the electrical appliance. In addition, at least one functional device is installed on the lid that corresponds to the specific functional key of the electrical appliance, comprising a pair of blind holes situated so to correspond with one another. An actuating magnet is installed in the inner hole and a controlling magnet is fixed on the bottom of the sliding key which has the same magnetic polarity with said actuating magnet.

Abstract: A light emitting diode structure including a substrate, a strain-reducing seed layer, an epitaxial layer, a first electrode and a second electrode is provided. The strain-reducing seed layer having a plurality of clusters is disposed on the substrate, and the material of the clusters is selected from a group consisting of aluminum nitride, magnesium nitride and indium nitride. The epitaxial layer includes a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer. The first electrode is disposed on the exposed first type doped semiconductor layer and electrically connected thereto. The second electrode is disposed on the second type doped semiconductor layer and electrically connected thereto.