Patents by Inventor Chi-Yuan Sun

Chi-Yuan Sun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD OF FORMING METAL GATE
    Publication number: 20140120711
    Abstract: Provided is a method of forming a metal gate including the following steps. A dielectric layer is formed on a substrate, wherein a gate trench is formed in the dielectric layer and a gate dielectric layer is formed in the gate trench. A first metal layer is formed in the gate trench by applying a AC bias between a target and the substrate during physical vapor deposition. A second metal layer is formed in the gate trench by applying a DC bias between the target and the substrate during physical vapor deposition.
    Type: Application
    Filed: October 26, 2012
    Publication date: May 1, 2014
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Min-Chuan Tsai, Hsin-Fu Huang, Chi-Mao Hsu, Tsun-Min Cheng, Chien-Hao Chen, Wei-Yu Chen, Chi-Yuan Sun
  • MOS TRANSISTOR AND PROCESS THEREOF
    Publication number: 20140054654
    Abstract: A MOS transistor includes a gate structure on a substrate, and the gate structure includes a wetting layer, a transitional layer and a low resistivity material from bottom to top, wherein the transitional layer has the properties of a work function layer, and the gate structure does not have any work function layers. Moreover, the present invention provides a MOS transistor process forming said MOS transistor.
    Type: Application
    Filed: August 22, 2012
    Publication date: February 27, 2014
    Inventors: Ya-Hsueh Hsieh, Chi-Mao Hsu, Hsin-Fu Huang, Min-Chuan Tsai, Chien-Hao Chen, Chi-Yuan Sun, Wei-Yu Chen, Chin-Fu Lin
  • SEMICONDUCTOR STRUCTURE AND PROCESS THEREOF
    Publication number: 20130334690
    Abstract: A semiconductor structure includes a work function metal layer, a (work function) metal oxide layer and a main electrode. The work function metal layer is located on a substrate. The (work function) metal oxide layer is located on the work function metal layer. The main electrode is located on the (work function) metal oxide layer. Moreover a semiconductor process forming said semiconductor structure is also provided.
    Type: Application
    Filed: June 13, 2012
    Publication date: December 19, 2013
    Inventors: Min-Chuan Tsai, Hsin-Fu Huang, Chi-Mao Hsu, Chin-Fu Lin, Chien-Hao Chen, Wei-Yu Chen, Chi-Yuan Sun, Ya-Hsueh Hsieh, Tsun-Min Cheng