Patents by Inventor Chia-Chen Tsai

Chia-Chen Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9779998
    Abstract: A method of manufacturing a semiconductor device is provided in the present invention. Multiple spacer layers are used in the invention to form spacers with different predetermined thickness on different active regions or devices, thus the spacing between the strained silicon structure and the gate structure (SiGe-to-Gate) can be properly controlled and adjusted to achieve better and more uniform performance for various devices and circuit layouts.
    Type: Grant
    Filed: March 6, 2017
    Date of Patent: October 3, 2017
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chia-Chen Tsai, Hung-Chang Chang, Ta-Kang Lo, Tsai-Fu Chen, Shang-Jr Chen
  • Publication number: 20170271547
    Abstract: A compound semiconductor device comprises a substrate, comprising a top surface, a bottom surface, a side surface connecting the top surface and the bottom surface; and a semiconductor stack formed on the top surface, wherein the side surface comprises a first deteriorated surface, a second deteriorated surface, a first crack surface between the first and second deteriorated surfaces, a second crack surface between the first deteriorated surface and the top surface, and a third crack surface between the second deteriorated surface and the bottom surface, wherein the first and second deteriorated surfaces are rougher than at least one of the first crack surface, the second crack surface and the third crack surface; and wherein the second crack surface is about perpendicular to the top surface, and the third crack surface is about perpendicular to the bottom surface.
    Type: Application
    Filed: March 31, 2017
    Publication date: September 21, 2017
    Inventors: Chia Chen TSAI, Chen OU, Chi Ling LEE, Chi Shiang HSU
  • Patent number: 9768227
    Abstract: A light-emitting element comprises a first semiconductor layer, a first light-emitting structure and a second light-emitting structure on the first semiconductor layer, a first electrode on the first semiconductor layer, a second electrode on the first light-emitting structure, a first trench between the first light-emitting structure and the second light-emitting structure, exposing a first upper surface of the first semiconductor layer, and a second trench formed in the first light-emitting structure, exposing a second upper surface of the first semiconductor layer, wherein the first trench is devoid of the first electrode and the second electrode formed therein, wherein the first electrode is formed in the second trench.
    Type: Grant
    Filed: August 27, 2014
    Date of Patent: September 19, 2017
    Assignee: EPISTAR CORPORATION
    Inventors: Chen Ou, Chun-Wei Chang, Chih-Wei Wu, Sheng-Chih Wang, Hsin-Mei Tsai, Chia-Chen Tsai, Chuan-Cheng Chang
  • Patent number: 9737607
    Abstract: A polymer and a pharmaceutical composition employing the same are disclosed. The polymer includes a first repeating unit, a second repeating unit, and a third repeating unit. In particular, the first repeating unit is the second repeating unit is wherein R1 is C1-6 alkyl group; and the third repeating unit is wherein X is and Y is a hydrophilic polymeric moiety.
    Type: Grant
    Filed: December 24, 2015
    Date of Patent: August 22, 2017
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Jui-Hsiang Chen, Yu-Hua Chen, Chia-Chen Tsai, Tse-Min Teng, Ting-Yu Shih, Chia-Chun Wang, Chia-wei Hong, Jennline Sheu, Hui-Ling Cheng, Shu-Feng Chen, Hung-Jui Huang, Shu-Ling Wang
  • Publication number: 20170221766
    Abstract: A method of manufacturing a semiconductor device is provided in the present invention. Multiple spacer layers are used in the invention to form spacers with different predetermined thickness on different active regions or devices, thus the spacing between the strained silicon structure and the gate structure (SiGe-to-Gate) can be properly controlled and adjusted to achieve better and more uniform performance for various devices and circuit layouts.
    Type: Application
    Filed: March 6, 2017
    Publication date: August 3, 2017
    Inventors: Chia-Chen Tsai, Hung-Chang Chang, Ta-Kang Lo, Tsai-Fu Chen, Shang-Jr Chen
  • Patent number: 9708310
    Abstract: A phenanthroindolizidine and phenanthroquinolizidine alkaloid having a hydroxyl group on the phenanthrene ring thereof was synthesized, which exhibits potent activity as an anticancer agent against, such as breast cancer, lung cancer, and prostate cancer.
    Type: Grant
    Filed: February 4, 2016
    Date of Patent: July 18, 2017
    Assignee: CHINA MEDICAL UNIVERSITY
    Inventors: Ta-Hsien Chuang, Chien-Fu Li, Chia-Chen Tsai, Chi-Fen Chang, Chieh-Yu Peng
  • Publication number: 20170152257
    Abstract: A phenanthroindolizidine and phenanthroquinolizidine alkaloid having a hydroxyl group on the phenanthrene ring thereof was synthesized, which exhibits potent activity as an anticancer agent against, such as breast cancer, lung cancer, and prostate cancer.
    Type: Application
    Filed: February 4, 2016
    Publication date: June 1, 2017
    Applicant: CHINA MEDICAL UNIVERSITY
    Inventors: TA-HSIEN CHUANG, CHIEN-FU LI, CHIA-CHEN TSAI, CHI-FEN CHANG, CHIEH-YU PENG
  • Patent number: 9634002
    Abstract: A semiconductor device and method of manufacturing the same are provided in the present invention. Multiple spacer layers are used in the invention to form spacers with different predetermined thickness on different active regions or devices, thus the spacing between the strained silicon structure and the gate structure (SiGe-to-Gate) can be properly controlled and adjusted to achieve better and more uniform performance for various devices and circuit layouts.
    Type: Grant
    Filed: February 29, 2016
    Date of Patent: April 25, 2017
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chia-Chen Tsai, Hung-Chang Chang, Ta-Kang Lo, Tsai-Fu Chen, Shang-Jr Chen
  • Publication number: 20170077350
    Abstract: A light-emitting element, includes a substrate; a light-emitting stack formed on the substrate, including a triangular upper surface parallel to the substrate, having three sides and three vertexes; a first electrode formed on the light-emitting stack and located near a first vertex of the three vertexes of the triangular upper surface; and a second electrode formed on the light-emitting stack; including two second electrode pads respectively located near other two vertexes of the three vertexes; and a second electrode extending part extending from the second electrode pads, disposed along the three sides of the triangular upper surface.
    Type: Application
    Filed: November 3, 2016
    Publication date: March 16, 2017
    Inventors: HSIN-YING WANG, DE-SHAN KUO, WEN-HUNG CHUANG, TSUN-KAI KO, CHIA-CHEN TSAI, CHYI-YANG SHEU, CHUN-CHANG CHEN
  • Patent number: 9502615
    Abstract: A light-emitting element, includes a substrate; a first light-emitting stack formed on the substrate, including a triangular upper surface parallel to the substrate, and wherein the triangular upper surface has three sides and three vertexes; a first electrode formed on the first light-emitting stack and located near a first side of the three sides of the triangular upper surface; and a second electrode formed on the first light-emitting stack; including a second electrode pad near a first vertex of the three vertexes; and a second electrode extending part extending from the second electrode pad in two directions, disposed along other two sides of the three sides to surround the first electrode and stopping at the first side to form an opening.
    Type: Grant
    Filed: November 12, 2015
    Date of Patent: November 22, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Hsin-Ying Wang, De-Shan Kuo, Wen-Hung Chuang, Tsun-Kai Ko, Chia-Chen Tsai, Chyi-Yang Sheu, Chun-Chang Chen
  • Publication number: 20160184437
    Abstract: A polymer and a pharmaceutical composition employing the same are disclosed. The polymer includes a first repeating unit, a second repeating unit, and a third repeating unit. In particular, the first repeating unit is the second repeating unit is wherein R1 is C1-6 alkyl group; and the third repeating unit is wherein X is and Y is a hydrophilic polymeric moiety.
    Type: Application
    Filed: December 24, 2015
    Publication date: June 30, 2016
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Jui-Hsiang Chen, Yu-Hua Chen, Chia-Chen Tsai, Tse-Min Teng, Ting-Yu Shih, Chia-Chun Wang, Chia-wei Hong, Jennline Sheu, Hui-Ling Cheng, Shu-Feng Chen, Hung-Jui Huang, Shu-Ling Wang
  • Publication number: 20160141454
    Abstract: A light-emitting element, includes a substrate; a first light-emitting stack formed on the substrate, including a triangular upper surface parallel to the substrate, and wherein the triangular upper surface has three sides and three vertexes; a first electrode formed on the first light-emitting stack and located near a first side of the three sides of the triangular upper surface; and a second electrode formed on the first light-emitting stack; including a second electrode pad near a first vertex of the three vertexes; and a second electrode extending part extending from the second electrode pad in two directions, disposed along other two sides of the three sides to surround the first electrode and stopping at the first side to form an opening.
    Type: Application
    Filed: November 12, 2015
    Publication date: May 19, 2016
    Inventors: Hsin-Ying WANG, De-Shan KUO, Wen-Hung CHUANG, Tsun-Kai KO, Chia-Chen TSAI, Chyi-Yang SHEU, Chun-Chang CHEN
  • Publication number: 20150076536
    Abstract: A light-emitting element comprises a first semiconductor layer, a first light-emitting structure and a second light-emitting structure on the first semiconductor layer, a first electrode on the first semiconductor layer, a second electrode on the first light-emitting structure, and a first trench between the first light-emitting structure and the second light-emitting structure, exposing the first semiconductor layer, wherein the first trench is devoid of the first electrode and the second electrode formed therein.
    Type: Application
    Filed: August 27, 2014
    Publication date: March 19, 2015
    Inventors: Chen OU, Chun-Wei CHANG, Chih-Wei WU, Sheng-Chih WANG, Hsin-Mei TSAI, Chia-Chen TSAI, Chuan-Cheng CHANG
  • Publication number: 20050188359
    Abstract: A method and a computer program product for developing and directing simulations used to train humans and animals in the development of various skills. The computer program product provides for selection of multiple locations within a defined area on a display screen, creation of one or more high level computer instructions describing the simulation relative to said locations and translation of the high level computer instructions into low level computer executable instructions necessary to carry out execution of the simulation. The high level computer instructions can be entered manually, or created automatically following selection of a high level command combined with a high level action. The resulting high level instructions can be downloaded to an external portable device for convenient display of the simulation at a remote location. The external device may be a remote control device that is capable of displaying simulations and controlling multiple electronic training devices.
    Type: Application
    Filed: February 20, 2004
    Publication date: August 25, 2005
    Inventors: Tom Lalor, Chia-Chen Tsai, Chang-Yu Chen