Patents by Inventor Chia-Chi Ho

Chia-Chi Ho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210119333
    Abstract: An electromagnetic wave adjusting device includes a first substrate, a first conductive element, a first insulation layer, a second substrate, a second conductive element, a dielectric layer, and a conductive layer. The first conductive element is disposed on the first substrate. The first insulation layer is disposed on the first conductive element. The second conductive element is disposed on the second substrate. The dielectric layer is disposed between the first substrate and the second substrate. The first conductive layer is disposed on the first insulation layer and electrically connected to the first conductive element. The electromagnetic wave adjusting device includes an overlap area and a capacitance adjustable area. An overlap portion of the first conductive element and the second conductive element constitutes the overlap area, the capacitance adjustable area includes the overlap area, and at least part of the first conductive layer is disposed in the capacitance adjustable area.
    Type: Application
    Filed: September 29, 2020
    Publication date: April 22, 2021
    Applicant: Innolux Corporation
    Inventors: Hsiuyi Tsai, Yi Hung Lin, Chia-Chi Ho, Yan-Zheng Wu
  • Publication number: 20210050657
    Abstract: An antenna device is provided, including a first substrate, a first conductive element, a second substrate, a second conductive element, and an insulating layer. The first conductive element is disposed on the first substrate to define, on the first substrate, a recessed region adjacent to the first conductive element. The second substrate faces the first substrate. The second conductive element is disposed on the second substrate and located between the first substrate and the second substrate. The insulating layer is disposed between the first substrate and the second substrate. In a top view of the antenna device, the second conductive element overlaps the first conductive element and the recessed region, and the insulating layer at least partially overlaps the recessed region.
    Type: Application
    Filed: July 20, 2020
    Publication date: February 18, 2021
    Applicant: Innolux Corporation
    Inventors: Yi Hung Lin, Chung-Kuang Wei, Tang Chin Hung, I-Yin Li, Chia-Chi Ho
  • Publication number: 20210048705
    Abstract: An electronic device including a pair of substrates, a sealant, and a heating unit is provided. Each of the pair of substrates includes a peripheral area and an active area, and each of the peripheral areas are adjacent to an edge of a corresponding one of the pair of substrates. The sealant is disposed between the pair of substrates. The heating unit is disposed on one of the pair of substrates and comprising a first portion disposed in the peripheral area of the one of the pair of substrates and adjacent to an edge of the one of the pair of substrates, a third portion disposed in the active area, and a second portion connecting the first portion and the third portion. The resistance of the first portion is less than a resistance of the third portion. Therefore, the electronic device may have improved heating efficiency.
    Type: Application
    Filed: July 27, 2020
    Publication date: February 18, 2021
    Applicant: Innolux Corporation
    Inventors: Yi Hung Lin, I-Yin Li, Chia-Chi Ho, Hsiuyi Tsai
  • Publication number: 20210035909
    Abstract: The disclosure provides an electronic apparatus and a manufacturing method thereof. The electronic apparatus includes a first insulating layer, a first metal layer, a second metal layer, and an electronic assembly. The first insulating layer includes a first surface and a second surface opposite to the first surface. The first metal layer has an opening and is formed on the first surface. The second metal layer is formed on the second surface and a projection of the opening on the second surface is overlapped with a projection of the second metal layer on the second surface. The electronic assembly is electrically connected with the first metal layer and the second metal layer.
    Type: Application
    Filed: July 3, 2020
    Publication date: February 4, 2021
    Applicant: Innolux Corporation
    Inventors: Tang Chin Hung, Chin-Lung Ting, Chung-Kuang Wei, Ker-Yih Kao, Tong-Jung Wang, Chih-Yung Hsieh, Hao Jung Huang, I-Yin Li, Chia-Chi Ho, Yi Hung Lin, Cheng-Hsu Chou, Chia-Ping Tseng
  • Publication number: 20210032308
    Abstract: The invention provides LFA3 polypeptide molecules, e.g., variant LFA3 fusion polypeptide molecules. The invention includes uses, and associated methods of using the LFA3 polypeptide molecules.
    Type: Application
    Filed: September 28, 2020
    Publication date: February 4, 2021
    Inventors: Natasha Kay CRELLIN, Lauren Kate ELY, Jason Robles REYES, Chia Chi HO, Jeffrey A. BLUESTONE, Eleonora TROTTA, Qizhi TANG
  • Publication number: 20200294891
    Abstract: A high-frequency device manufacturing method is provided. The method includes providing a substrate; forming a conductive material on the substrate; standing the substrate and the conductive material for a first time duration; forming a conductive layer by sequentially repeating the steps of forming the conductive material and standing at least once; and patterning the conductive layer. The thickness of the conductive layer is in a range from 0.9 ?m to 10 ?m. A high-frequency device is also provided.
    Type: Application
    Filed: June 3, 2020
    Publication date: September 17, 2020
    Inventors: Ming-Yen WENG, Ker-Yih KAO, Chia-Chi HO, Tsutomu SHINOZAKI, Cheng-Chi WANG, I-Yin LI
  • Publication number: 20200251812
    Abstract: An antenna device is provided. The antenna device includes a first substrate, a multilayer electrode, a second substrate, and a liquid-crystal layer. The multilayer electrode is disposed on the first substrate, and the multilayer electrode includes a first conductive layer, a second conductive layer, and a third conductive layer. The second conductive layer is disposed on the first conductive layer. The third conductive layer is disposed on the second conductive layer. The liquid-crystal layer is disposed between the first substrate and the second substrate. In addition, the third conductive layer includes a first portion that extends beyond the second conductive layer.
    Type: Application
    Filed: January 2, 2020
    Publication date: August 6, 2020
    Inventors: Chia-Ping TSENG, Ker-Yih KAO, Chia-Chi HO, Ming-Yen WENG, Hung-I TSENG, Shu-Ling WU, Huei-Ying CHEN
  • Patent number: 10720708
    Abstract: An antenna device includes a first dielectric substrate, a first radiator disposed on the first dielectric substrate, a second dielectric substrate disposed on the first radiator, a second radiator disposed between the first dielectric substrate and the second dielectric substrate, a main radiator, disposed on the second dielectric substrate, and a modulation structure located between a first radiation portion of the first radiator and a second radiation portion of the second radiator. The first radiation portion, the modulation structure, and the second radiation portion are located in a central area.
    Type: Grant
    Filed: July 24, 2017
    Date of Patent: July 21, 2020
    Assignee: INNOLUX CORPORATION
    Inventors: Huei-Ying Chen, I-Yin Li, Chia-Chi Ho, Hsu-Kuan Hsu, Ker-Yih Kao, Chung-Kuang Wei, Chin-Lung Ting, Cheng-Chi Wang, Chien-Hsing Lee
  • Patent number: 10707152
    Abstract: A high-frequency device manufacturing method is provided. The method includes providing a substrate; forming a conductive material on the substrate; standing the substrate and the conductive material for a first time duration; forming a conductive layer by sequentially repeating the steps of forming the conductive material and standing at least once; and patterning the conductive layer. The thickness of the conductive layer is in a range from 0.9 ?m to 10 ?m. A high-frequency device is also provided.
    Type: Grant
    Filed: December 18, 2017
    Date of Patent: July 7, 2020
    Assignee: INNOLUX CORPORATION
    Inventors: Ming-Yen Weng, Ker-Yih Kao, Chia-Chi Ho, Tsutomu Shinozaki, Cheng-Chi Wang, I-Yin Li
  • Publication number: 20200161249
    Abstract: An electronic device is provided. The electronic device includes a first substrate. The electronic device also includes a multilayer electrode disposed on the first substrate. The multilayer electrode includes a first conductive layer, a second conductive layer disposed on the first conductive layer, and a third conductive layer disposed on the second conductive layer. The electronic device further includes a second substrate facing the first substrate. In addition, the electronic device includes a working medium disposed between the first substrate and the second substrate. The chemical electromotive force of the second conductive layer is between that of the first conductive layer and the third conductive layer.
    Type: Application
    Filed: November 4, 2019
    Publication date: May 21, 2020
    Inventors: Chia-Chi HO, Ming-Yen WENG, I-Yin LI
  • Patent number: 10651549
    Abstract: A microwave device includes a first substrate having a first surface, a first metal layer, a second substrate having a second surface corresponding to the first substrate, a second metal layer, a sealing element, a modulation material, and a fill material. The first metal layer is disposed on the first surface, and the first metal layer includes openings. The second metal layer is disposed on the second surface. The second metal layer includes electrodes corresponding to the openings. The sealing element is located between the first substrate and the second substrate. An active zone is formed by a space between the sealing element, the first substrate, and the second substrate. The modulation material is filled within the active area. The fill material is disposed in the active area. The thickness of the fill material is greater than 0.3 ?m, and less than the thickness of the sealing element.
    Type: Grant
    Filed: July 3, 2018
    Date of Patent: May 12, 2020
    Assignee: INNOLUX CORPORATION
    Inventors: I-Yin Li, Chin-Lung Ting, Chia-Chi Ho, Yi-Hung Lin
  • Publication number: 20200091594
    Abstract: An antenna device is provided. The antenna device includes a first substrate, a first conductive layer, a first insulating structure, a second substrate, a second conductive layer and a liquid-crystal layer. The first conductive layer is disposed on the first substrate. The first insulating structure is disposed on the first conductive layer, and the first insulating structure includes a first region and a second region. The second substrate is disposed opposite to the first substrate. The second conductive layer is disposed on the second substrate. The liquid-crystal layer is disposed between the first conductive layer and the second conductive layer. The thickness of the first region is less than the thickness of the second region, and at least a portion of the first region is disposed in an overlapping region of the first conductive layer and the second conductive layer.
    Type: Application
    Filed: August 21, 2019
    Publication date: March 19, 2020
    Inventors: Yi-Hung LIN, Tang-Chin HUNG, Chia-Chi HO, I-Yin LI
  • Patent number: 10461412
    Abstract: A microwave modulation device includes a first radiator, a second radiator and a modulation structure. The first radiator includes a substrate; a metal layer disposed on the substrate; a protective layer disposed on at least a portion of the metal layer and including a through hole overlapping with at least a portion of the metal layer; and an etch stop layer disposed between the metal layer and the protective layer. The second radiator disposed corresponding to the first radiator. The modulation structure is disposed between the first radiator and the second radiator.
    Type: Grant
    Filed: February 27, 2018
    Date of Patent: October 29, 2019
    Assignee: INNOLUX CORPORATION
    Inventors: I-Yin Li, Yi-Hung Lin, Chia-Chi Ho, Li-Wei Sung, Ming-Yen Weng, Hung-I Tseng, Kuo-Chun Lo, Charlene Su, Ker-Yih Kao
  • Patent number: 10358472
    Abstract: High affinity CD47 reagents are provided, which (i) comprise at least one amino acid change relative to the wild-type protein; and (ii) have an increased affinity for a SIRP? relative to the wild-type protein. Compositions and methods are provided for modulating phagocytosis in a mammal by administering a therapeutic dose of a pharmaceutical composition comprising a high affinity CD47 reagent, which blocks the physiological binding interaction between SIRP? and a ligand, e.g., native CD47.
    Type: Grant
    Filed: May 5, 2016
    Date of Patent: July 23, 2019
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Chia Chi Ho, Kenan Christopher Garcia, Aaron Michael Ring, Kipp Andrew Weiskopf, Irving L. Weissman, Nan Guo Ring
  • Patent number: 10249949
    Abstract: A microwave modulation device includes a first radiator; a second radiator disposed on the first radiator; a third radiator disposed on the second radiator; a support structure disposed between the first radiator and the second radiator; and a modulation structure disposed between the second radiator and the third radiator. A microwave-transmission layer is located among the space defined by the first radiator, the second radiator, and the support structure. The microwave-transmission layer is gas, substantially vacuum, liquid or insulating material.
    Type: Grant
    Filed: January 12, 2018
    Date of Patent: April 2, 2019
    Assignee: INNOLUX CORPORATION
    Inventors: I-Yin Li, Chia-Chi Ho, Chin-Lung Ting, Yan-Zheng Wu
  • Publication number: 20190013277
    Abstract: A radiation device includes a transistor substrate. A first transistor, a second transistor, a first electrode pad, a second electrode pad, a first conductive line, and a second conductive line are disposed on the transistor substrate. The first electrode pad is disposed adjacent to the first transistor, the second electrode pad is disposed adjacent to the second transistor, the first transistor is electrically connected to the first electrode pad through the first conductive line, and the second transistor is electrically connected to the second electrode pad through the second conductive line. The distance between the first transistor and the first electrode pad is shorter than the distance between the second transistor and the second electrode pad. The ratio of the total area of the first conductive line and the total area of the second conductive line is between 0.8 and 1.2.
    Type: Application
    Filed: June 5, 2018
    Publication date: January 10, 2019
    Inventors: Yi-Hung LIN, Chin-Lung TING, Chia-Chi HO, I-Yin LI
  • Publication number: 20190013574
    Abstract: A microwave device includes a first substrate having a first surface, a first metal layer, a second substrate having a second surface corresponding to the first substrate, a second metal layer, a sealing element, a modulation material, and a fill material. The first metal layer is disposed on the first surface, and the first metal layer includes openings. The second metal layer is disposed on the second surface. The second metal layer includes electrodes corresponding to the openings. The sealing element is located between the first substrate and the second substrate. An active zone is formed by a space between the sealing element, the first substrate, and the second substrate. The modulation material is filled within the active area. The fill material is disposed in the active area. The thickness of the fill material is greater than 0.3 ?m, and less than the thickness of the sealing element.
    Type: Application
    Filed: July 3, 2018
    Publication date: January 10, 2019
    Inventors: I-Yin LI, Chin-Lung TING, Chia-Chi HO, Yi-Hung LIN
  • Publication number: 20180370132
    Abstract: A secure extruder device includes a material delivery channel, a nozzle part, a parameter part, a thermal-control part, a material auto-destruction module and/or a parameter auto-destruction module. The material delivery channel is assembled with an extrusion part. The nozzle part is connected to the material delivery channel for ejecting material in the material delivery channel out. The parameter part provides parameters for a printing task to a microcontroller. The thermal-control part heats the nozzle part according to the parameters for the printing task. The material auto-destruction module destroys the material delivery channel after the printing task is completed. The parameter auto-destruction module destroys the parameters for the printing task after the printing task is completed. The microcontroller controls the extrusion part based on the parameters for the printing task so that the extrusion part delivers the material disposed inside the material delivery channel to the nozzle part.
    Type: Application
    Filed: June 21, 2018
    Publication date: December 27, 2018
    Inventors: Ding-Yuan CHEN, Chun-Hung CHEN, Chia-Chi HO, Sheng-Nan KUO
  • Publication number: 20180375202
    Abstract: A microwave modulation device includes a first radiator, a second radiator and a modulation structure. The first radiator includes a substrate; a metal layer disposed on the substrate; a protective layer disposed on at least a portion of the metal layer and including a through hole overlapping with at least a portion of the metal layer; and an etch stop layer disposed between the metal layer and the protective layer. The second radiator disposed corresponding to the first radiator. The modulation structure is disposed between the first radiator and the second radiator.
    Type: Application
    Filed: February 27, 2018
    Publication date: December 27, 2018
    Inventors: I-Yin LI, Yi-Hung LIN, Chia-Chi HO, Li-Wei SUNG, Ming-Yen WENG, Hung-I TSENG, Kuo-Chun LO, Charlene SU, Ker-Yih KAO
  • Publication number: 20180206334
    Abstract: A metal-laminated structure is provided. The metal-laminated structure includes a substrate, a compressive stress layer disposed on the substrate, and at least one metal layer disposed on the compressive stress layer, wherein the thickness ratio of the metal layer to the compressive stress layer is in a range from 1 to 30. A high-frequency device including the metal-laminated structure is also provided.
    Type: Application
    Filed: December 22, 2017
    Publication date: July 19, 2018
    Inventors: I-Yin LI, Chia-Chi HO, Yi-Hung LIN, Chen-Shuo HSIEH, Ker-Yih KAO