Abstract: A high-frequency device manufacturing method is provided. The method includes providing a substrate; forming a conductive material on the substrate; standing the substrate and the conductive material for a first time duration; forming a conductive layer by sequentially repeating the steps of forming the conductive material and standing at least once; and patterning the conductive layer. The thickness of the conductive layer is in a range from 0.9 ?m to 10 ?m. A high-frequency device is also provided.

Abstract: An antenna device is provided. The antenna device includes a first substrate, a multilayer electrode, a second substrate, and a liquid-crystal layer. The multilayer electrode is disposed on the first substrate, and the multilayer electrode includes a first conductive layer, a second conductive layer, and a third conductive layer. The second conductive layer is disposed on the first conductive layer. The third conductive layer is disposed on the second conductive layer. The liquid-crystal layer is disposed between the first substrate and the second substrate. In addition, the third conductive layer includes a first portion that extends beyond the second conductive layer.

Abstract: An antenna device includes a first dielectric substrate, a first radiator disposed on the first dielectric substrate, a second dielectric substrate disposed on the first radiator, a second radiator disposed between the first dielectric substrate and the second dielectric substrate, a main radiator, disposed on the second dielectric substrate, and a modulation structure located between a first radiation portion of the first radiator and a second radiation portion of the second radiator. The first radiation portion, the modulation structure, and the second radiation portion are located in a central area.

Abstract: A high-frequency device manufacturing method is provided. The method includes providing a substrate; forming a conductive material on the substrate; standing the substrate and the conductive material for a first time duration; forming a conductive layer by sequentially repeating the steps of forming the conductive material and standing at least once; and patterning the conductive layer. The thickness of the conductive layer is in a range from 0.9 ?m to 10 ?m. A high-frequency device is also provided.

Abstract: An electronic device is provided. The electronic device includes a first substrate. The electronic device also includes a multilayer electrode disposed on the first substrate. The multilayer electrode includes a first conductive layer, a second conductive layer disposed on the first conductive layer, and a third conductive layer disposed on the second conductive layer. The electronic device further includes a second substrate facing the first substrate. In addition, the electronic device includes a working medium disposed between the first substrate and the second substrate. The chemical electromotive force of the second conductive layer is between that of the first conductive layer and the third conductive layer.

Abstract: A microwave device includes a first substrate having a first surface, a first metal layer, a second substrate having a second surface corresponding to the first substrate, a second metal layer, a sealing element, a modulation material, and a fill material. The first metal layer is disposed on the first surface, and the first metal layer includes openings. The second metal layer is disposed on the second surface. The second metal layer includes electrodes corresponding to the openings. The sealing element is located between the first substrate and the second substrate. An active zone is formed by a space between the sealing element, the first substrate, and the second substrate. The modulation material is filled within the active area. The fill material is disposed in the active area. The thickness of the fill material is greater than 0.3 ?m, and less than the thickness of the sealing element.

Abstract: An antenna device is provided. The antenna device includes a first substrate, a first conductive layer, a first insulating structure, a second substrate, a second conductive layer and a liquid-crystal layer. The first conductive layer is disposed on the first substrate. The first insulating structure is disposed on the first conductive layer, and the first insulating structure includes a first region and a second region. The second substrate is disposed opposite to the first substrate. The second conductive layer is disposed on the second substrate. The liquid-crystal layer is disposed between the first conductive layer and the second conductive layer. The thickness of the first region is less than the thickness of the second region, and at least a portion of the first region is disposed in an overlapping region of the first conductive layer and the second conductive layer.

Abstract: A microwave modulation device includes a first radiator, a second radiator and a modulation structure. The first radiator includes a substrate; a metal layer disposed on the substrate; a protective layer disposed on at least a portion of the metal layer and including a through hole overlapping with at least a portion of the metal layer; and an etch stop layer disposed between the metal layer and the protective layer. The second radiator disposed corresponding to the first radiator. The modulation structure is disposed between the first radiator and the second radiator.

Abstract: High affinity CD47 reagents are provided, which (i) comprise at least one amino acid change relative to the wild-type protein; and (ii) have an increased affinity for a SIRP? relative to the wild-type protein. Compositions and methods are provided for modulating phagocytosis in a mammal by administering a therapeutic dose of a pharmaceutical composition comprising a high affinity CD47 reagent, which blocks the physiological binding interaction between SIRP? and a ligand, e.g., native CD47.

Abstract: A microwave modulation device includes a first radiator; a second radiator disposed on the first radiator; a third radiator disposed on the second radiator; a support structure disposed between the first radiator and the second radiator; and a modulation structure disposed between the second radiator and the third radiator. A microwave-transmission layer is located among the space defined by the first radiator, the second radiator, and the support structure. The microwave-transmission layer is gas, substantially vacuum, liquid or insulating material.

Abstract: A microwave device includes a first substrate having a first surface, a first metal layer, a second substrate having a second surface corresponding to the first substrate, a second metal layer, a sealing element, a modulation material, and a fill material. The first metal layer is disposed on the first surface, and the first metal layer includes openings. The second metal layer is disposed on the second surface. The second metal layer includes electrodes corresponding to the openings. The sealing element is located between the first substrate and the second substrate. An active zone is formed by a space between the sealing element, the first substrate, and the second substrate. The modulation material is filled within the active area. The fill material is disposed in the active area. The thickness of the fill material is greater than 0.3 ?m, and less than the thickness of the sealing element.

Abstract: A radiation device includes a transistor substrate. A first transistor, a second transistor, a first electrode pad, a second electrode pad, a first conductive line, and a second conductive line are disposed on the transistor substrate. The first electrode pad is disposed adjacent to the first transistor, the second electrode pad is disposed adjacent to the second transistor, the first transistor is electrically connected to the first electrode pad through the first conductive line, and the second transistor is electrically connected to the second electrode pad through the second conductive line. The distance between the first transistor and the first electrode pad is shorter than the distance between the second transistor and the second electrode pad. The ratio of the total area of the first conductive line and the total area of the second conductive line is between 0.8 and 1.2.

Abstract: A secure extruder device includes a material delivery channel, a nozzle part, a parameter part, a thermal-control part, a material auto-destruction module and/or a parameter auto-destruction module. The material delivery channel is assembled with an extrusion part. The nozzle part is connected to the material delivery channel for ejecting material in the material delivery channel out. The parameter part provides parameters for a printing task to a microcontroller. The thermal-control part heats the nozzle part according to the parameters for the printing task. The material auto-destruction module destroys the material delivery channel after the printing task is completed. The parameter auto-destruction module destroys the parameters for the printing task after the printing task is completed. The microcontroller controls the extrusion part based on the parameters for the printing task so that the extrusion part delivers the material disposed inside the material delivery channel to the nozzle part.

Abstract: A microwave modulation device includes a first radiator, a second radiator and a modulation structure. The first radiator includes a substrate; a metal layer disposed on the substrate; a protective layer disposed on at least a portion of the metal layer and including a through hole overlapping with at least a portion of the metal layer; and an etch stop layer disposed between the metal layer and the protective layer. The second radiator disposed corresponding to the first radiator. The modulation structure is disposed between the first radiator and the second radiator.

Abstract: A microwave modulation device includes a first radiator; a second radiator disposed on the first radiator; a third radiator disposed on the second radiator; a support structure disposed between the first radiator and the second radiator; and a modulation structure disposed between the second radiator and the third radiator. A microwave-transmission layer is located among the space defined by the first radiator, the second radiator, and the support structure. The microwave-transmission layer is gas, substantially vacuum, liquid or insulating material.

Abstract: A metal-laminated structure is provided. The metal-laminated structure includes a substrate, a compressive stress layer disposed on the substrate, and at least one metal layer disposed on the compressive stress layer, wherein the thickness ratio of the metal layer to the compressive stress layer is in a range from 1 to 30. A high-frequency device including the metal-laminated structure is also provided.

Abstract: A high-frequency device manufacturing method is provided. The method includes providing a substrate; forming a conductive material on the substrate; standing the substrate and the conductive material for a first time duration; forming a conductive layer by sequentially repeating the steps of forming the conductive material and standing at least once; and patterning the conductive layer. The thickness of the conductive layer is in a range from 0.9 ?m to 10 ?m. A high-frequency device is also provided.

Abstract: The present disclosure provides a method for manufacturing a porous film, including: preparing a polymer mixture solution, wherein the polymer mixture solution includes polycaprolactone and at least one hydrophobic polymer; adding solid particles as a dispersing agent to the polymer mixture solution and mixing the solid particles with the polymer mixture solution, wherein the amount of solid particles added is enough to convert the polymer mixture solution into a solid mixture; drying the solid mixture to form a film; and washing the film with a washing fluid to remove the solid particles from the film to form the porous film, wherein the weight ratio of the polycaprolactone to the at least one hydrophobic polymer is about 1:0.1-10, and wherein the weight ratio of the polycaprolactone and the at least one hydrophobic polymer to the solid particles is about 1:0.01-250.

Abstract: The present disclosure provides a method for manufacturing a porous film, including: preparing a polymer mixture solution, wherein the polymer mixture solution includes polycaprolactone and at least one hydrophobic polymer; adding solid particles as a dispersing agent to the polymer mixture solution and mixing the solid particles with the polymer mixture solution, wherein the amount of solid particles added is enough to convert the polymer mixture solution into a solid mixture; drying the solid mixture to form a film; and washing the film with a washing fluid to remove the solid particles from the film to form the porous film, wherein the weight ratio of the polycaprolactone to the at least one hydrophobic polymer is about 1:0.1-10, and wherein the weight ratio of the polycaprolactone and the at least one hydrophobic polymer to the solid particles is about 1:0.01-250.

Abstract: High affinity CD47 reagents are provided, which (i) comprise at least one amino acid change relative to the wild-type protein; and (ii) have an increased affinity for a SIRP? relative to the wild-type protein. Compositions and methods are provided for modulating phagocytosis in a mammal by administering a therapeutic dose of a pharmaceutical composition comprising a high affinity CD47 reagent, which blocks the physiological binding interaction between SIRP? and a ligand, e.g., native CD47.