Abstract: Die structures and methods of forming the same are described. In an embodiment, a device includes: a lower integrated circuit die; a first upper integrated circuit die face-to-face bonded to the lower integrated circuit die, the first upper integrated circuit die including a first semiconductor substrate and a first through-substrate via; a gap-fill dielectric around the first upper integrated circuit die, a top surface of the gap-fill dielectric being substantially coplanar with a top surface of the first semiconductor substrate and with a top surface of the first through-substrate via; and an interconnect structure including a first dielectric layer and first conductive vias, the first dielectric layer disposed on the top surface of the gap-fill dielectric and the top surface of the first semiconductor substrate, the first conductive vias extending through the first dielectric layer to contact the top surface of the first through-substrate via.

Abstract: The present disclosure provides a method of manufacturing a semiconductor device. The method includes: forming a transistor region in a substrate; forming a gate dielectric layer over the transistor region; forming a diffusion-blocking layer over the gate dielectric layer; forming a first portion of a work function layer over the diffusion-blocking layer; forming a second portion of the work function layer over the first portion of the work function layer; forming a plurality of barrier elements on or under a top surface of the second portion of the work function layer; and forming a gate electrode over the work function layer, wherein the plurality of barrier elements block oxygen from diffusing into the work function layer during the formation of the gate electrode.

Abstract: In an embodiment, a device includes: a first integrated circuit die comprising a semiconductor substrate and a first through-substrate via; a gap-fill dielectric around the first integrated circuit die, a surface of the gap-fill dielectric being substantially coplanar with an inactive surface of the semiconductor substrate and with a surface of the first through-substrate via; a dielectric layer on the surface of the gap-fill dielectric and the inactive surface of the semiconductor substrate; a first bond pad extending through the dielectric layer to contact the surface of the first through-substrate via, a width of the first bond pad being less than a width of the first through-substrate via; and a second integrated circuit die comprising a die connector bonded to the first bond pad.

Abstract: The present disclosure relates to an integrated circuit. The integrated circuit includes a conductive interconnect disposed on a dielectric over a substrate. An interfacial layer is arranged along an upper surface of the conductive interconnect. A liner is arranged along a lower surface of the conductive interconnect. The liner and the interfacial layer surround the conductive interconnect. A middle layer is located over the interfacial layer and has a bottommost surface over the dielectric. A bottommost surface of the interfacial layer and the bottommost surface of the middle layer are both above a top of the conductive interconnect.

Abstract: A detection element, a manufacturing method thereof and a flat panel detector are disclosed. The detection element includes: a base substrate; a first electrode on the base substrate; a photoelectric conversion layer; a transparent electrode and a second electrode electrically connected with the transparent electrode on a side of the photoelectric conversion layer away from the first electrode. An orthographic projection of the photoelectric conversion layer on the base substrate completely falls within an orthographic projection of the first electrode on the base substrate, in a plane parallel to the base substrate, the transparent electrode is located at a middle portion of the photoelectric conversion, an orthographic projection of the second electrode on the base substrate includes a ring surrounding an orthographic projection of the transparent electrode on the base substrate.

Abstract: A detection element, a manufacturing method thereof and a flat panel detector are disclosed. The detection element includes: a base substrate; a first electrode on the base substrate; a photoelectric conversion layer; a transparent electrode and a second electrode electrically connected with the transparent electrode on a side of the photoelectric conversion layer away from the first electrode. An orthographic projection of the photoelectric conversion layer on the base substrate completely falls within an orthographic projection of the first electrode on the base substrate, in a plane parallel to the base substrate, the transparent electrode is located at a middle portion of the photoelectric conversion, an orthographic projection of a portion of the photoelectric conversion layer not covered by the transparent electrode on the base substrate at least partially falls within an orthographic projection of the second electrode on the base substrate.

Abstract: A detection element, a manufacturing method thereof and a flat panel detector are disclosed. The detection element includes: a base substrate; a first electrode on the base substrate; a photoelectric conversion layer; a transparent electrode and a second electrode electrically connected with the transparent electrode on a side of the photoelectric conversion layer away from the first electrode. An orthographic projection of the photoelectric conversion layer on the base substrate completely falls within an orthographic projection of the first electrode on the base substrate, in a plane parallel to the base substrate, the transparent electrode is located at a middle portion of the photoelectric conversion, an orthographic projection of a portion of the photoelectric conversion layer not covered by the transparent electrode on the base substrate at least partially falls within an orthographic projection of the second electrode on the base substrate.

Abstract: A detection element, a manufacturing method thereof and a flat panel detector are disclosed. The detection element includes: a base substrate; a photodiode on the base substrate, the photodiode includes: a first electrode on the base substrate; a photoelectric conversion layer on a side of the first electrode away from the base substrate; a transparent electrode and a second electrode electrically connected with the transparent electrode on a side of the photoelectric conversion layer away from the first electrode. Besides, an orthographic projection of the photoelectric conversion layer on the base substrate completely falls within an orthographic projection of the first electrode on the base substrate; the photoelectric conversion layer includes a sidewall, an orthographic projection of the sidewall of the photoelectric conversion layer on the base substrate is at least partially overlapped with an orthographic projection of the second electrode on the base substrate.

Abstract: A flat panel detector and a manufacturing method thereof. The flat panel detector includes a first substrate and a second substrate. The first substrate includes a driving circuit, the second substrate includes a photosensitive element, the first substrate and the second substrate are arranged opposite to each other so as to be assembled, and the driving circuit is electrically connected with the photosensitive element to drive the photosensitive element. The flat panel detector not only can improve the filling rate of a photodiode in a pixel unit and increase the photosensitive area of the pixel unit in the flat panel detector, but also can effectively prevent static electricity and scratches generated during use and improve the photoelectric characteristics and yield of the flat panel detector.

Abstract: A detection panel and a manufacturing method thereof are disclosed. The detection panel includes a first substrate and a second substrate, and the first substrate includes a light detection layer; the second substrate includes a drive circuit; the first substrate and the second substrate are opposite to each other for cell assembly, and the drive circuit is coupled to the light detection layer to read a photosensitive signal generated by the light detection layer.

Abstract: A plasma generating device includes a plasma sprinkler head and an outer housing, wherein the plasma sprinkler head includes a case and a plasma generating assembly disposed on the case and having a plasma nozzle. The plasma nozzle is located on a side of the case. The outer housing is disposed on the case and is located around the plasma nozzle. In this way, when the plasma nozzle sprays the plasma, the plasma generating device of the present invention could effectively avoid introducing too much external air to affect a quality of the plasma.

Abstract: A wireless sensing network communication method is disclosed in which, describes a gateway device and backup gateway devices in a wireless sensing network communicate in a subscribe-publish-based scheme. The gateway device subscribes to a device capability event. The gateway device subscribes to a network disconnection event. When network disconnection occurs, the gateway device publishes a network disconnection event. The backup gateway devices receive notification of the network disconnection event and publish device capability events in response. The gateway device selects a backup gateway device as a primary gateway in the wireless sensing network fulfill failover purpose.

Abstract: A detection element, a manufacturing method thereof and a flat panel detector are disclosed. The detection element includes: a base substrate; a photodiode on the base substrate, the photodiode includes: a first electrode on the base substrate; a photoelectric conversion layer on a side of the first electrode away from the base substrate; a transparent electrode and a second electrode electrically connected with the transparent electrode on a side of the photoelectric conversion layer away from the first electrode. Besides, an orthographic projection of the photoelectric conversion layer on the base substrate completely falls within an orthographic projection of the first electrode on the base substrate; the photoelectric conversion layer includes a sidewall, an orthographic projection of the sidewall of the photoelectric conversion layer on the base substrate is at least partially overlapped with an orthographic projection of the second electrode on the base substrate.

Abstract: A detection panel and a manufacturing method thereof are disclosed. The detection panel (200) includes a first substrate (21) and a second substrate (22), and the first substrate (21) includes a light detection layer (213); the second substrate (22) includes a drive circuit (205); the first substrate (21) and the second substrate (22) are opposite to each other for cell assembly, and the drive circuit (205) is coupled to the light detection layer (213) to read a photosensitive signal generated by the light detection layer (213). By forming the light detection layer (213) and the drive circuit (205) on different substrates, the detection panel (200) contributes to increase the flatness of the light detection layer (213) and reduce the defects of the light detection layer (213), thereby reducing the leakage current in a dark state and improving the performance of the detection panel (200).

Abstract: A flat panel detector and a manufacturing method thereof. The flat panel detector includes a first substrate and a second substrate. The first substrate includes a driving circuit, the second substrate includes a photosensitive element, the first substrate and the second substrate are arranged opposite to each other so as to be assembled, and the driving circuit is electrically connected with the photosensitive element to drive the photosensitive element. The flat panel detector not only can improve the filling rate of a photodiode in a pixel unit and increase the photosensitive area of the pixel unit in the flat panel detector, but also can effectively prevent static electricity and scratches generated during use and improve the photoelectric characteristics and yield of the flat panel detector.

Abstract: A liquid crystal lens and a manufacturing method thereof, and a display device are provided. The liquid crystal lens includes: an upper substrate, a lower substrate, a liquid crystal layer arranged between the upper substrate and the lower substrate; at least one first electrode arranged at a side, close to the liquid crystal layer, of the upper substrate; and at least one second electrode and at least one third electrode which are arranged at a side, close to the liquid crystal layer, of the lower substrate. The liquid crystal layer includes a first region over the second electrode and a second region over the third electrode. Liquid crystals in both the first region and the second region have a tilted angle, and alignment directions of the liquid crystals in the first region and the second region are opposite to each other.

Abstract: A wireless sensing network communication method is disclosed in which, describes a gateway device and backup gateway devices in a wireless sensing network communicate in a subscribe-publish-based scheme. The gateway device subscribes to a device capability event. The gateway device subscribes to a network disconnection event. When network disconnection occurs, the gateway device publishes a network disconnection event. The backup gateway devices receive notification of the network disconnection event and publish device capability events in response. The gateway device selects a backup gateway device as a primary gateway in the wireless sensing network fulfill failover purpose.

Abstract: Disclosed are an array substrate, a manufacturing method thereof, a sensor and a detection device. The array substrate includes: a base substrate; a thin-film transistor (TFT) being disposed on the base substrate and including a source electrode and an active layer; a passivation layer disposed on the TFT; a first metal layer disposed on the passivation layer; an insulating layer disposed on the first metal layer; a through hole structure running through the insulating layer, the first metal layer and the passivation layer; and a detection unit being disposed on the insulating layer and including a second metal layer, wherein the second metal layer makes direct contact with the source electrode via the through hole structure.

Abstract: Disclosed is a voice control system and method thereof. The voice control system is used in an electronic device and works in a sleep mode and a working mode. The voice control system comprises an audio detection module, an audio codec and a control module. Under the sleep mode, the audio detection module continually detects whether there is a wake-up speech in a received first audio data. If yes, the audio detection module generates a first indication signal and temporarily stores the following first audio data. When the control module is woken up by the first indication signal, the voice control system enters the working mode. Under the working mode, the control module drives the audio codec to read and process the temporarily stored first audio data to recognize control speech in the first audio data and to accordingly control the electronic device.

Abstract: A wireless sensing network communication method is disclosed in which, describes a gateway device and backup gateway devices in a wireless sensing network communicate in a subscribe-publish-based scheme. The gateway device subscribes to a device capability event. The gateway device subscribes to a network disconnection event. When network disconnection occurs, the gateway device publishes a network disconnection event. The backup gateway devices receive notification of the network disconnection event and publish device capability events in response. The gateway device selects a backup gateway device as a primary gateway in the wireless sensing network fulfill failover purpose.