Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having an interlayer dielectric (ILD) layer thereon; forming a first recess, a second recess, and a third recess in the ILD layer; forming a material layer on the ILD layer and in the first recess, the second recess, and the third recess; performing a first treatment on the material layer in the first recess; and performing a second treatment on the material layer in the first recess and second recess.

Abstract: A method of forming a dielectric layer includes the following steps. First of all, a high-k dielectric layer is formed on a substrate. Next, a nitridation process is performed on the high-k dielectric layer immediately after the high-k dielectric layer is formed. Then, a post-nitridation process is performed on the high-k dielectric layer after the nitridation process is performed.

Abstract: The present invention provides an integrated circuit including a substrate, a first transistor, a second transistor and a third transistor. The first transistor has a first metal gate including a first bottom barrier layer, a first work function metal layer and a first metal layer. The second transistor has a second metal gate including a second bottom barrier layer, a second work function metal layer and a second metal layer. The third transistor has a third metal gate including a third bottom barrier layer, a third work function metal layer and a third metal layer. The first transistor, the second transistor and the third transistor has the same conductive type. A nitrogen concentration of the first bottom barrier layer>a nitrogen concentration of the second bottom barrier layer>a nitrogen concentration of the third bottom barrier layer.

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a gate structure on the substrate; forming a lightly doped drain in the substrate; and performing a first implantation process for implanting fluorine ions at a tiled angle into the substrate and part of the gate structure.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a substrate, a gate structure on the substrate, and a spacer adjacent to the gate structure, in which the bottom of the spacer includes a tapered profile and the tapered profile comprises a convex curve.

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming an interfacial layer on the substrate; forming a stack structure on the interfacial layer; patterning the stack structure to form a gate structure on the interfacial layer; forming a liner on the interfacial layer and the gate structure; and removing part of the liner and part of the interfacial layer for forming a spacer.

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a gate structure on the substrate; depositing a liner on the gate structure and the substrate; and performing an etching process by injecting a gas comprising CH3F, O2, and He for forming a spacer adjacent to the gate structure.

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a gate structure on the substrate; forming a lightly doped drain in the substrate; and performing a first implantation process for implanting fluorine ions at a tiled angle into the substrate and part of the gate structure.

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; injecting a first precursor and forming an interfacial layer on the substrate; and injecting a second precursor and performing a thermal treatment for forming an interface layer on the interfacial layer.

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a gate structure on the substrate; forming a lightly doped drain in the substrate; and performing a first implantation process for implanting fluorine ions at a tiled angle into the substrate and part of the gate structure.

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming an interfacial layer on the substrate; forming a high-k dielectric layer on the interfacial layer; forming a first bottom barrier metal (BBM) layer on the high-k dielectric layer; performing a thermal treatment; removing the first BBM layer; and forming a second BBM layer on the high-k dielectric layer.

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming an interfacial layer on the substrate; forming a high-k dielectric layer on the interfacial layer; forming a first bottom barrier metal (BBM) layer on the high-k dielectric layer; performing a thermal treatment; removing the first BBM layer; and forming a second BBM layer on the high-k dielectric layer.

Abstract: A method for producing oil and/or gas comprising injecting a miscible enhanced oil recovery formulation into fractures, karsts, and/or vugs of a formation for a first time period from a first well; producing oil and/or gas from the fractures, karsts, and/or vugs from a second well for the first time period; injecting a miscible enhanced oil recovery formulation into the fractures, karsts, and/or vugs for a second time period from the second well; and producing oil and/or gas from the fractures, karsts, and/or vugs from the first well for the second time period.

Abstract: A system for treating a hydrocarbon containing formation is described. The system includes two or more groups of elongated heaters. The group includes two or more heaters placed in two or more openings in the formation. The heaters in the group are electrically coupled below the surface of the formation. The openings include at least partially uncased wellbores in a hydrocarbon layer of the formation. The groups are electrically configured such that current flow through the formation between at least two groups is inhibited. The heaters are configured to provide heat to the formation.

Abstract: A method for producing oil and/or gas comprising injecting a miscible enhanced oil recovery formulation into fractures, karsts, and/or vugs of a formation for a first time period from a first well; producing oil and/or gas from the fractures, karsts, and/or vugs from a second well for the first time period; injecting a miscible enhanced oil recovery formulation into the fractures, karsts, and/or vugs for a second time period from the second well; and producing oil and/or gas from the fractures, karsts, and/or vugs from the first well for the second time period.

Abstract: A method for producing oil and/or gas comprising injecting a miscible enhanced oil recovery formulation into fractures, karsts, and/or vugs of a formation for a first time period from a first well; producing oil and/or gas from the fractures, karsts, and/or vugs from a second well for the first time period; injecting a miscible enhanced oil recovery formulation into the fractures, karsts, and/or vugs for a second time period from the second well; and producing oil and/or gas from the fractures, karsts, and/or vugs from the first well for the second time period.

Abstract: A system for producing oil and/or gas from an underground formation comprising a first array of wells dispersed above the formation; a second array of wells dispersed above the formation; wherein the first array of wells comprises a mechanism to inject a miscible enhanced oil recovery formulation into the formation while the second array of wells comprises a mechanism to produce oil and/or gas from the formation for a first time period; and wherein the second array of wells comprises a mechanism to inject a miscible enhanced oil recovery formulation into the formation while the first array of wells comprises a mechanism to produce oil and/or gas from the formation for a second time period.

Abstract: A system for heating a subsurface formation is described. The system includes a plurality of elongated heaters located in a plurality of openings in the formation. At least two of the heaters are substantially parallel to each other for at least a portion of the lengths of the heaters. At least two of the heaters have first end portions in a first region of the formation and second end portions in a second region of the formation. A source of time-varying current is configured to apply time-varying current to at least two of the heaters. The first end portions of at least two heaters are configured to have substantially the same voltage applied to them. The second portions of at least two heaters are configured to have substantially the same voltage applied to them.

Abstract: A cyclic steam soak (CSS) stimulation method for producing heated hydrocarbons from a viscous hydrocarbon-containing formation comprises the steps of: a) drilling a well (1) having a substantially horizontal or inclined lower section (3) into the viscous hydrocarbon-containing formation (4) substantially along the trajectory of the minimum compressive horizontal stress Sh; b) cutting at selected intervals along the length of the lower well section (3) substantially disk-shaped cavities (5A-5D) into the viscous hydrocarbon-containing formation (4) by a rotating hydraulic jet cutting device (6); c) completing the well (1); d) injecting steam into the well (1) and disk-shaped cavities (5A-5D) at such an elevated pressure that the hydraulic pressure in at least one disk-shaped cavity 5A is above the formation fracturing pressure, thereby fracturing the formation (4) and permitting the steam to invade the formation surrounding the fracture and to heat hydrocarbons in the steam invaded zone; e) interrupting steam i

Abstract: A system for treating a hydrocarbon containing formation is described. The system includes two or more groups of elongated heaters. The group includes two or more heaters placed in two or more openings in the formation. The heaters in the group are electrically coupled below the surface of the formation. The openings include at least partially uncased wellbores in a hydrocarbon layer of the formation. The groups are electrically configured such that current flow through the formation between at least two groups is inhibited. The heaters are configured to provide heat to the formation.