Patents by Inventor Chia-Han Lai

Chia-Han Lai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Systems and Methods for Reducing Contact Resistivity of Semiconductor Devices
    Publication number: 20150021757
    Abstract: Systems and methods are provided for reducing a contact resistivity associated with a semiconductor device structure. A substrate including a semiconductor region is provided. One or more dielectric layers are formed on the semiconductor region, the one or more dielectric layers including an element. A gaseous material is applied on the one or more dielectric layers to change a concentration of the element in the one or more dielectric layers. A contact layer is formed on the one or more dielectric layers to generate a semiconductor device structure. The semiconductor device structure includes the contact layer, the one or more dielectric layers, and the semiconductor region. A contact resistivity associated with the semiconductor device structure is reduced by changing the concentration of the element in the one or more dielectric layers.
    Type: Application
    Filed: July 18, 2013
    Publication date: January 22, 2015
    Inventors: CHENG-TUNG LIN, TENG-CHUN TSAI, LI-TING WANG, CHI-YUAN CHEN, HONG-MAO LEE, HUI-CHENG CHANG, WEI-JUNG LIN, BING-HUNG CHEN, CHIA-HAN LAI
  • Systems and methods for reducing contact resistivity of semiconductor devices
    Patent number: 8927418
    Abstract: Systems and methods are provided for reducing a contact resistivity associated with a semiconductor device structure. A substrate including a semiconductor region is provided. One or more dielectric layers are formed on the semiconductor region, the one or more dielectric layers including an element. A gaseous material is applied on the one or more dielectric layers to change a concentration of the element in the one or more dielectric layers. A contact layer is formed on the one or more dielectric layers to generate a semiconductor device structure. The semiconductor device structure includes the contact layer, the one or more dielectric layers, and the semiconductor region. A contact resistivity associated with the semiconductor device structure is reduced by changing the concentration of the element in the one or more dielectric layers.
    Type: Grant
    Filed: July 18, 2013
    Date of Patent: January 6, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Cheng-Tung Lin, Teng-Chun Tsai, Li-Ting Wang, Chi-Yuan Chen, Hong-Mao Lee, Hui-Cheng Chang, Wei-Jung Lin, Bing-Hung Chen, Chia-Han Lai
  • Semiconductor Device and Method for Forming the Same
    Publication number: 20130049219
    Abstract: A system and method for forming and using a liner is provided. An embodiment comprises forming an opening in an inter-layer dielectric over a substrate and forming the liner along the sidewalls of the opening. A portion of the liner is removed from a bottom of the opening, and a cleaning process may be performed through the liner. By using the liner, damage to the sidewalls of the opening from the cleaning process may be reduced or eliminated. Additionally, the liner may be used to help implantation of ions within the substrate.
    Type: Application
    Filed: August 31, 2011
    Publication date: February 28, 2013
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wen-Chi Tsai, Chia-Han Lai, Yung-Chung Chen, Mei-Yun Wang, Chii-Ming Wu, Fang-Cheng Chen, Huang-Ming Chen, Ming-ta Lei