Abstract: A method for a user equipment (UE) monitors a physical downlink control channel (PDCCH) for power saving signaling. The method includes receiving a discontinuous reception (DRX) configuration from a base station (BS) to configure the UE to monitor a scheduling signal on the PDCCH within a DRX active time for multiple transmit-receive points (TRP). Power saving signaling configurations are received from the BS to configure the UE to monitor power saving signaling on the PDCCH for the multiple TRPs, each power saving signaling configuration for a different TRP and comprising a time offset between a start of a nearest power saving signaling and a start of a DRX on-duration time. The PDCCH is monitored according to the power saving signaling configuration. The UE wakes up to monitor the PDCCH for the scheduling signal in the DRX active time according to the DRX configuration when receiving the power saving signaling.

Abstract: A method of a non-terrestrial network (NTN) assistance information update procedure for a user equipment (UE) is provided. The method includes receiving, by the UE from a first cell, first NTN assistance information associated with the first cell; and performing, by the UE, the NTN assistance information update procedure based on at least one of UE-specific control signaling or an NTN-specific system information block (SIB) by which the UE receives the first NTN assistance information.

Abstract: The disclosure provides method for configuring transmission configuration indicator (TCI) states for user equipment (UE) and UE. In the embodiments of the disclosure, the details about how to exactly use the TCI-based structure for indicating a common beam for various purposes (e.g., both DL/UL, UL (only) or DL (only)) have been introduced. In addition, the embodiments of the disclosure have proposed the exact behavior of switching different TCI state for different purpose as well. Accordingly, efficient beam indication for both DL/UL transmission, UL only transmission, and DL only transmission can be facilitated, and the procedure(s) related to seamlessly switching among different beam indication signaling are also specified.

Abstract: Inner spacers between a source/drain region of a nanostructure transistor and sacrificial nanostructure layers of the nanostructure transistor are removed prior to formation of a gate structure of the nanostructure transistor. The sacrificial nanostructure layers are removed, and then the inner spacers are removed. The sacrificial nanostructure layers are then replaced with the gate structure of the nanostructure transistor such that the gate structure and the source/drain region are spaced apart by air gaps that result from the removal of the inner spacers. The dielectric constant (or relative permittivity) of the air gaps between the source/drain region and the gate structure is less than the dielectric constant of the material of the inner spacers. The lesser dielectric constant of the air gaps reduces the amount of capacitance between the source/drain region and the gate structure.

Abstract: A wireless communication method, a User Equipment (UE), and a Base Station (BS) for performing repetition-based Uplink (UL) transmissions are provided. The wireless communication method includes receiving, from the BS, a Radio Resource Control (RRC) message including first information indicating a repetition type, second information indicating a plurality of Transmission Configuration Indicator (TCI) states, and third information including a plurality of items each configuring a Physical Uplink Shared Channel (PUSCH) resource allocation; receiving Downlink Control Information (DCI) that indicates one of the plurality of items; determining a set of nominal PUSCH repetitions; and transmitting at least one actual PUSCH repetition that is determined based on the set of nominal PUSCH repetitions, wherein each nominal PUSCH repetition in the set of nominal PUSCH repetitions maps to one of the plurality of TCI states.

Abstract: A method includes receiving, at a user equipment device (UE) from a transmission and reception point (TRP), an uplink CSI measurement configuration including a sounding reference signal (SRS) resource configuration indicating one or more of SRS resource randomization configurations of a cyclic shift, a comb offset, and a time domain orthogonal cover code (TD-OCC); and transmitting SRSs in a sequence of symbols, according to the SRS resource configuration, wherein the SRSs are determined according to the one or more of SRS resource randomization configurations of the cyclic shift, the comb offset, and the TD-OCC, values of the one or more of SRS resource randomization configurations being randomized symbol-by-symbol according to at least one of a cell-specific identity (IDcell) and a UE-specific identity (IDue).

Abstract: A device and method of forming a device are provided. The method includes forming a stack of nanostructure channels over a substrate by forming a source/drain opening. The method also includes forming a sacrificial source/drain in the source/drain opening. The method further includes increasing tensile strain of the stack of nanostructure channels by replacing the sacrificial source/drain with a replacement source/drain having germanium concentration that exceeds that of the sacrificial source/drain.

Abstract: In an aspect of the disclosure, a method, a computer-readable medium, and an apparatus are provided. The apparatus may be a UE. The UE receives first downlink signals from a first access node. The UE determines a first downlink timing of the first access node based on the first downlink signals. The UE transmits a first preamble to a second access node based on the first downlink timing of the first access node. The UE receives second downlink signals from the second access node. The UE determines a second downlink timing of the second access node based on the second downlink signals. The UE transmits a second preamble to the second access node based on the second downlink timing of the second access node.

Abstract: A method for fabricating a semiconductor device is disclosed. The method involves forming a stack of alternating semiconductor channels and interposers on a substrate, with sacrificial structures between the interposers. Source/drain openings are formed, and strain in the channels is modified. Source/drain structures are formed in the openings, and dielectric layers are deposited. The resulting device features stacked nanostructures with inner spacers of varying heights, enabling improved performance in electronic devices.

Abstract: A method includes forming a multi-layer stack including a plurality of semiconductor nanostructures. The multi-layer stack includes a semiconductor nanostructure, and a sacrificial semiconductor layer over the semiconductor nanostructure. The method further includes depositing a semiconductor layer over and contacting the semiconductor nanostructure, removing the sacrificial semiconductor layer, and forming a replacement gate stack encircling a combined region of the semiconductor nanostructure and the semiconductor layer.

Abstract: Various embodiments of the present disclosure provide a semiconductor device structure including a source/drain feature disposed over a substrate, a plurality of semiconductor layers vertically stacked over the substrate and in contact with the source/drain feature, a gate electrode layer surrounding a portion of each of the plurality of the semiconductor layers, a first dielectric spacer in contact with a first side of a topmost semiconductor layer of the plurality of semiconductor layers, and a second dielectric spacer in contact with a second side of the topmost semiconductor layer of the plurality of semiconductor layers.

Abstract: A capacitor structure including a silicon material layer, a support frame layer, and a capacitor is provided. The support frame layer is disposed in the silicon material layer. The support frame layer has recesses. There is a cavity between two adjacent recesses. The support frame layer is located between the cavity and the recess. The support frame layer has a through hole directly above the cavity. The capacitor is disposed in the silicon material layer. The capacitor includes a first insulating layer and a first electrode layer. The first insulating layer is disposed on the support frame layer. The first electrode layer is disposed on the first insulating layer and fills the recess and the cavity.

Abstract: A method of configuring a set of active cells among neighboring cells to reduce latency and interruption for inter-cell mobility is proposed. The set of active cells is an active set of cells among which UE can do fast cell switching. The set of active cells is configured by the network based on UE measurement report or network deployment information. UE maintains the configuration and can perform pre-synchronization to the configured active cells in downlink (DL) only or in both DL and uplink (UL). UE maintains the DL/UL synchronization with the active cells, and applies configuration once UE is indicated to switch to an active cell as the target cell. Because UE maintains the configuration and DL/UL timing of the target cell before receiving the cell-switch command, the mobility latency and interruption time for inter-cell mobility is reduced.

Abstract: Various solutions for channel information feedback with respect to user equipment and network apparatus in mobile communications are described. An apparatus may receive a reference signal transmitted by a network side including one or more than one network nodes. The apparatus may derive a channel response information observed by a receiving domain of the apparatus according to the reference signal. The apparatus may decompose the channel response information into a two-dimensional domain to obtain a linear combination coefficient representation of the channel response information in the two-dimensional domain. The apparatus may report a compressed channel information to the network side based on the linear combination coefficient representation and the two-dimensional domain.

Abstract: A method for forming transistors includes forming a stack of alternating first semiconductor layers and second semiconductor layers on a substrate and forming nanostructure channels and interposers by forming a source/drain opening in a first device region of the substrate. The source/drain opening extending through the first and second semiconductor layers. The method includes, after the forming a source/drain opening, increasing tensile strain of the nanostructure channels, and, after the increasing tensile strain, forming a source/drain in the source/drain opening.

Abstract: A method for SCell BFR performed by a UE is provided. The method includes: receiving a first SCell BFR configuration corresponding to a first SCell, the first SCell BFR configuration including at least one of a resource list for BFD and a resource list for NBI; detecting a beam failure condition in the first SCell by measuring at least one BFD reference signal; determining a first new candidate beam index for the first SCell based on the first SCell BFR configuration; and transmitting a beam failure recovery request that includes a cell index of the first SCell in which beam failure occurs and the determined first new candidate beam index.

Abstract: A method for a base station (BS) instructing a UE to monitor a physical downlink control channel (PDCCH) for power saving signaling is disclosed. The method comprises transmitting a discontinuous reception (DRX) configuration to the UE indicating to monitor a scheduling signal on the PDCCH within a DRX active time, and transmitting a configuration to the UE for monitoring the power saving signaling on the PDCCH, instructing the UE to wake up for monitoring the scheduling signal in the DRX active time, wherein the configuration includes a time in milliseconds prior to a start of a DRX on-duration time, and instructs the UE to start monitoring the PDCCH for the power saving signaling.

Abstract: A method of power control can include receiving at a UE a first downlink reference signal from a repeater and a second downlink reference signal from a base station, the first downlink reference signal corresponding to a first path that is between the UE and the base station and passes the repeater, the second downlink reference signal corresponding to a second path that is between the UE and the base station. The UE estimates a first uplink path loss of the first path and a second uplink path loss of the second path and determine a first uplink transmit power corresponding to the first path and a second uplink transmit power corresponding to the second path. The UE performs an uplink transmission on the first path based on the first uplink transmit power and on the second path based on the second uplink transmit power.

Abstract: A method performed by a UE is provided. The method includes receiving at least one SL-DRX configuration and a plurality of SL resource pool configurations to be configured on the first UE; performing partial sensing based on at least one of the plurality of SL resource pool configurations when an SL-DRX operation is performed based on the at least one SL-DRX configuration, each of at least one SL resource pool configured by the at least one of the plurality of SL resource pool configurations comprising one or more time slots; and performing SL-CBR measurement associated with each of the at least one SL resource pool in the one or more time slots where the partial sensing is performed.

Abstract: A method for beam management performed by a UE is provided. The method includes: receiving a DCI format in a first BWP based on a first QCL assumption specific to the first BWP, the DCI format scheduling a PDSCH reception in a second BWP; receiving an RRC configuration that includes a plurality of candidate TCI states associated with a serving cell in which the PDSCH is scheduled; receiving a MAC CE that indicates a subset of the plurality of candidate TCI states for activation in the second BWP; determining a second QCL assumption specific to the second BWP based on one TCI state in the subset; and receiving the PDSCH in the second BWP based on the second QCL assumption.