Abstract: In accordance with an embodiment, a structure comprises a substrate having a first area and a second area; a through substrate via (TSV) in the substrate penetrating the first area of the substrate; an isolation layer over the second area of the substrate, the isolation layer having a recess; and a conductive material in the recess of the isolation layer, the isolation layer being disposed between the conductive material and the substrate in the recess.

Abstract: An electrostatic chuck for clamping a warped workpiece has a clamping surface comprising a dielectric layer. The dielectric layer has a field and one or more zones formed of differing dielectric materials. One or more electrodes are coupled to a power supply, and a controller controls a clamping voltage supplied to the one or more electrodes via the power supply. An electrostatic attraction force associated with each of the field and one or more zones of the dielectric layer of the electrostatic chuck is induced, wherein the electrostatic attraction force varies based on the dielectric material of each of the field and one or more zones. The electrostatic attraction force is greater in the one or more zones than in the field, therein attracting warped regions of the workpiece to the clamping surface and clamping the warped workpiece to the clamping surface across a surface of the warped workpiece.

Abstract: The present disclosure provides for methods and systems for controlling profile uniformity of a chemical vapor deposition (CVD) film. A method includes depositing a first layer on a substrate by CVD with a first shower head, the first layer having a first profile, and depositing a second layer over the first layer by CVD with a second shower head, the second layer having a second profile. The combined first layer and second layer have a third profile, and the first profile, the second profile, and the third profile are different from one another.

Abstract: An electrostatic chuck for clamping a warped workpiece has a clamping surface comprising a dielectric layer. The dielectric layer has a field and one or more zones formed of differing dielectric materials. One or more electrodes are coupled to a power supply, and a controller controls a clamping voltage supplied to the one or more electrodes via the power supply. An electrostatic attraction force associated with each of the field and one or more zones of the dielectric layer of the electrostatic chuck is induced, wherein the electrostatic attraction force varies based on the dielectric material of each of the field and one or more zones. The electrostatic attraction force is greater in the one or more zones than in the field, therein attracting warped regions of the workpiece to the clamping surface and clamping the warped workpiece to the clamping surface across a surface of the warped workpiece.

Abstract: In accordance with an embodiment, a structure comprises a substrate having a first area and a second area; a through substrate via (TSV) in the substrate penetrating the first area of the substrate; an isolation layer over the second area of the substrate, the isolation layer having a recess; and a conductive material in the recess of the isolation layer, the isolation layer being disposed between the conductive material and the substrate in the recess.

Abstract: In some embodiments, the present disclosure relates to a plasma processing system that generates a magnetic field having a maximum strength that is independent of workpiece size. The plasma processing system has a plurality of side electromagnets that have a size which is independent of the workpiece size. The side electromagnets are located around a perimeter of a processing chamber configured to house a semiconductor workpiece. When a current is provided to the side electromagnets, separate magnetic fields emanate from separate positions around the workpiece. The separate magnetic fields contribute to the formation of an overall magnetic field that controls the distribution of plasma within the processing chamber. Because the size of the plurality of separate side magnets is independent of the workpiece size, the plurality of side magnets can generate a magnetic field having a maximum field strength that is independent of workpiece size.

Abstract: Plasma-enhanced chemical vapor deposition (PECVD) devices enable the generation of a plasma in a plasma zone of a deposition chamber, which reacts with a surface of a substrate to form a deposited film in the fabrication of a semiconductor component. The plasma generator is often positioned over the center of the substrate, and the generated plasma often remains in the vicinity of the plasma generator, resulting in a thicker deposition near the center than at the edges of the substrate. Tighter process control is achievable by positioning one or more electromagnets in a periphery of the plasma zone and supplying power to generate a magnetic field, thereby inducing the charged plasma to achieve a more consistent distribution within the plasma zone and more uniform deposition on the substrate. Variations in the number, configuration, and powering of the electromagnets enable various redistributive effects on the plasma within the plasma zone.

Abstract: Integrated circuit devices and method of forming them. The devices include a dielectric barrier layer formed over a copper-containing metal interconnect structure. The dielectric barrier layer inhibits electro-migration of Cu. The dielectric barrier layer includes a metal-containing layer that forms an interface with the interconnect structure. Incorporating metal within the interfacial layer improves adhesion of the dielectric barrier layer to copper lines and the like and provides superior electro-migration resistance over the operating lifetime of the devices.

Abstract: Embodiments of an ultraviolet (UV) curing system for treating a semiconductor substrate such as a wafer are disclosed. The curing system generally includes a processing chamber, a wafer support for holding a wafer in the chamber, a UV radiation source disposed above the chamber, and a UV transparent window interspersed between the radiation source and wafer support. In one embodiment, the wafer support is provided by a belt conveyor operable to transport wafers through the chamber during UV curing. In another embodiment, the UV radiation source is a movable lamp unit that travels across the top of the chamber for irradiating the wafer. In another embodiment, the UV transparent window includes a UV radiation modifier that reduces the intensity of UV radiation on portions of the wafer positioned below the modifier. Various embodiments enhance wafer curing uniformity by normalizing UV intensity levels on the wafer.

Abstract: A semiconductor manufacturing tool and method for operating the tool are provided. The semiconductor manufacturing tool includes a process chamber in which plasma operations or ion etching operations are carried out and a valve assembly for opening and closing a valve that provides for loading and unloading substrates into and out of, the semiconductor manufacturing tool. While a processing operation is being carried out in the chamber, a valve assembly purge operation also takes place. The valve assembly purge operation involves inert gases being directed to the valve assembly area to prevent the buildup of particles and contaminating films in the valve assembly. Because the valve assembly is maintained in a clean condition, particle contamination is reduced or eliminated.

Abstract: An electrostatic chuck for clamping a warped workpiece has a clamping surface comprising a dielectric layer. The dielectric layer has a field and one or more zones formed of differing dielectric materials. One or more electrodes are coupled to a power supply, and a controller controls a clamping voltage supplied to the one or more electrodes via the power supply. An electrostatic attraction force associated with each of the field and one or more zones of the dielectric layer of the electrostatic chuck is induced, wherein the electrostatic attraction force varies based on the dielectric material of each of the field and one or more zones. The electrostatic attraction force is greater in the one or more zones than in the field, therein attracting warped regions of the workpiece to the clamping surface and clamping the warped workpiece to the clamping surface across a surface of the warped workpiece.

Abstract: The present disclosure relates to a guiding element for guiding gas flow within a chamber. The guiding element includes a structure, one or more inlets, an outlet, and a transportation region. The one or more inlets are formed on a first side of the structure. The inlets have inlet sizes selected according to a removal rate and to mitigate gas flow variations within the chamber. The outlet is on a second side of the structure, opposite the first side of the structure. The outlet has an outlet size selected according to the removal rate. The transportation region is within the structure and couples or connects the inlets to the outlet.

Abstract: In some embodiments, the present disclosure relates to a plasma processing system that generates a magnetic field having a maximum strength that is independent of workpiece size. The plasma processing system has a plurality of side electromagnets that have a size which is independent of the workpiece size. The side electromagnets are located around a perimeter of a processing chamber configured to house a semiconductor workpiece. When a current is provided to the side electromagnets, separate magnetic fields emanate from separate positions around the workpiece. The separate magnetic fields contribute to the formation of an overall magnetic field that controls the distribution of plasma within the processing chamber. Because the size of the plurality of separate side magnets is independent of the workpiece size, the plurality of side magnets can generate a magnetic field having a maximum field strength that is independent of workpiece size.

Abstract: The present disclosure provides for methods and systems for controlling profile uniformity of a chemical vapor deposition (CVD) film. A method includes depositing a first layer on a substrate by CVD with a first shower head, the first layer having a first profile, and depositing a second layer over the first layer by CVD with a second shower head, the second layer having a second profile. The combined first layer and second layer have a third profile, and the first profile, the second profile, and the third profile are different from one another.

Abstract: An illumination device includes: a mounting unit; a lighting unit including a circuit board mounted on the mounting unit, and at least one light emitting component mounted on the circuit board; and a lamp cap mounted on the mounting unit for covering the lighting unit. The lamp cap includes a surrounding wall disposed around the lighting unit, a central top wall disposed spacedly in the surrounding wall, and a plurality of spaced apart connecting ribs interconnecting the surrounding wall and the central top wall such that a plurality of vent holes are formed among the surrounding wall, the central top wall and the connecting ribs.

Abstract: In accordance with an embodiment, a structure comprises a substrate having a first area and a second area; a through substrate via (TSV) in the substrate penetrating the first area of the substrate; an isolation layer over the second area of the substrate, the isolation layer having a recess; and a conductive material in the recess of the isolation layer, the isolation layer being disposed between the conductive material and the substrate in the recess.

Abstract: A background image updating method is adapted to a touch screen including a first and a second image modules. A first and a second images are captured by the first and the second image modules as a first and a second background images, respectively. (a) Whether an absolute value of a brightness difference between a third image captured by the first image module and the first background image is greater than a predetermine value is compared. (b) If the result of the step(a) is yes, whether an absolute value of a brightness difference between a fourth image captured by the second image module and the second background image is greater than another predetermine value is compared. (c) If the result of the step(b) is yes, a fifth and a sixth images are captured by the first and the second image modules as the first and the second background images, respectively.

Abstract: A series of lights are mounted in side-by-side relation on a plastic support module. A second module is partially positioned in overlapping relation with the first module and a pair of holes on the second module are positioned onto the upper ends of a pair of posts on the first module, with the electrical wires of the lights on the first module being clamped between the overlapping module areas.