Patents by Inventor Chia-Ho Chen

Chia-Ho Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200199585
    Abstract: A tracer particle is provided. The tracer particle includes: a core structure; a nucleic acid molecule immobilized on the core structure; and a shell layer covering the core structure and the nucleic acid molecule; wherein the core structure has a first porosity, the shell layer has a second porosity, and the first porosity is greater than the second porosity.
    Type: Application
    Filed: December 11, 2019
    Publication date: June 25, 2020
    Applicant: Industrial Technology Research Institute
    Inventors: Kai-Chun FAN, Yin-Lung HAN, Pei-Jyuan GAO, Yong-Yang LIN, Chieh-Lun CHENG, Chien-Chang HUANG, Yung-Ho CHANG, Chia-Long LIN, I-Son NG, Bo-Han CHEN
  • Publication number: 20200004086
    Abstract: A display device including a backlight module is provided. The backlight module includes: a substrate, a backlight cavity, a plurality of light emitting elements, and an optical adjustment layer. The backlight cavity is located on the substrate. The plurality of light emitting elements is disposed in the backlight cavity. The optical adjustment layer covers the plurality of light emitting elements and fills the remaining space of the backlight cavity. The optical adjustment layer has a refractive index n greater than the refractive index n0 of the air.
    Type: Application
    Filed: May 30, 2019
    Publication date: January 2, 2020
    Inventors: Chin-Lung TING, Ming-Hui CHU, Fang-Ho LIN, Chia-Lun CHEN, Yen-Liang CHEN
  • Patent number: 10509193
    Abstract: A driving mechanism includes a frame, a carrying base, and a drive module. The carrying base is disposed in the frame, and includes a carrying body, a first stop element and a second stop element. The carrying body is configured to carry an optical element. The first stop element is disposed on the carrying body, and configured to limit the range of motion of the carrying body in a first direction. The second stop element is disposed on the carrying body, and configured to limit the range of motion of the carrying body in the first direction. The driving module is disposed in the frame, and configured to move the carrying body relative to the frame. The first direction is parallel to the axis of the optical element, and the first stop element is closer to the top portion of the frame than the second stop element.
    Type: Grant
    Filed: May 17, 2018
    Date of Patent: December 17, 2019
    Assignee: TDK TAIWAN CORP.
    Inventors: Chao-Chang Hu, Bing-Ru Song, Yi-Ho Chen, Chia-Pin Hsu, Chih-Wei Weng, Shin-Hua Chen, Chien-Lun Huang, Chao-Chun Chang, Shou-Jen Liu, Kun-Shih Lin, Nai-Wen Hsu, Yu-Cheng Lin, Shang-Yu Hsu, Yu-Huai Liao, Yi-Hsin Nieh, Shih-Ting Huang, Kuo-Chun Kao, Fu-Yuan Wu
  • Publication number: 20190358198
    Abstract: A use of ovatodiolide for preparing a composition used for inhibiting protein synthesis of gastric Helicobacter pylori, wherein the ovatodiolide achieves an effect of inhibiting gastric Helicobacter pylori by inhibiting the expression of 30S ribosomes RpsB of gastric Helicobacter pylori and further inhibiting its protein synthesis.
    Type: Application
    Filed: May 23, 2018
    Publication date: November 28, 2019
    Inventors: Hsiu-Man Lien, Chia-Chang Chen, Chih-Ho Lai, Sheau-Jiun Chang, Hui-Yu Wu
  • Publication number: 20190322824
    Abstract: A transparent polyester film has low visible light transmittance of 5-50% by JIS K7705 testing standard and a high infrared-blocking rate of at least 90% by JIS R3106 testing standard, which is extruded from a kind of polyester resins obtained from 5-40 wt % of nanoparticle-based thermal insulation slurry and/or 0.005-0.1 wt % of nanoparticle-based black pigment slurry by weight of and to react with the polymerization materials to completely perform an esterification and a polycondensation, wherein the thermal insulation nanoparticle has a chemical formula of CsXNYWO3-ZClC with an average particle size of 10-90 nm and the nanoparticle-based black contains carbon black particles having a particle size of 20-80 nm.
    Type: Application
    Filed: July 4, 2019
    Publication date: October 24, 2019
    Inventors: TE-CHAO LIAO, CHUN-CHE TSAO, CHIA-HO CHENG, TZAI-SHING CHEN
  • Patent number: 10435526
    Abstract: A transparent polyester film has low visible light transmittance of 5-50% by JIS K7705 testing standard and a high infrared-blocking rate of at least 90% by JIS R3106 testing standard, which is extruded from a kind of polyester resins obtained from 5-40 wt % of nanoparticle-based thermal insulation slurry and/or 0.005-0.1 wt % of nanoparticle-based black pigment slurry by weight of and to react with the polymerization materials to completely perform an esterification and a polycondensation, wherein the thermal insulation nanoparticle has a chemical formula of CsXNYWO3-ZClC with an average particle size of 10-90 nm and the nanoparticle-based black contains carbon black particles having a particle size of 20-80 nm.
    Type: Grant
    Filed: June 27, 2017
    Date of Patent: October 8, 2019
    Assignee: NAN YA PLASTICS CORPORATION
    Inventors: Te-Chao Liao, Chun-Che Tsao, Chia-Ho Cheng, Tzai-Shing Chen
  • Patent number: 10375029
    Abstract: A multimedia broadcasting system having a multiple-node structure includes nodes. Each node is coupled to at least one of the nodes, and the nodes include server nodes and multimedia-playing terminal nodes. Each server node is coupled to at least one of the server nodes and provides at least one multimedia content. Each multimedia-playing terminal node receives multimedia content transmitted by a server node of the server nodes and plays the multimedia content. A first server node of the server nodes is coupled to a second server node of the server nodes, and the first server node transmits, via the second server node, a first multimedia content to at least one multimedia-playing terminal node controlled by the second server node. Each multimedia-playing terminal node is a multimedia play terminal including at least one display device or audio playing device.
    Type: Grant
    Filed: May 19, 2014
    Date of Patent: August 6, 2019
    Assignee: VIA TECHNOLOGIES, INC.
    Inventors: Jia-Shiang Chen, Chia-Wei Huang, Shiang Steve Charng, Chia-Sheng Kuo, Cheng-Tao Tan, Heng-Ho Wu
  • Publication number: 20190148308
    Abstract: The present disclosure, in some embodiments, relates to a method of forming an integrated circuit device. The method may be performed by forming a conductive line over a substrate and in contact with a liner. A dielectric barrier layer is formed on the conductive line. The dielectric barrier layer includes an interfacial layer contacting the conductive line, a middle layer contacting the interfacial layer, and an upper layer contacting the middle layer. The interfacial layer and the liner collectively completely surround the conductive line. An inter-level dielectric layer is formed along sidewalls of the upper layer.
    Type: Application
    Filed: December 20, 2018
    Publication date: May 16, 2019
    Inventors: Su-Jen Sung, Chih-Chiang Chang, Chia-Ho Chen
  • Patent number: 10163795
    Abstract: The present disclosure relates to an integrated circuit device and an associated method of formation. The integrated circuit device includes a substrate, and a conductive metal interconnect line arranged within a dielectric material disposed over the substrate. An interfacial layer is in contact with an upper surface of the conductive metal interconnect line. An upper dielectric layer is arranged over the interfacial layer. A middle dielectric layer is arranged between the upper dielectric layer and the interfacial layer.
    Type: Grant
    Filed: November 4, 2016
    Date of Patent: December 25, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Su-Jen Sung, Chih-Chiang Chang, Chia-Ho Chen
  • Patent number: 9741575
    Abstract: The present disclosure relates to a chemical vapor deposition apparatus and associated methods. In some embodiments, the CVD apparatus has a vacuum chamber and a gas import having a gas import axis through which a process gas is imported into the vacuum chamber and being arranged near an upper region of the vacuum chamber. At least one exhaust port is arranged near a bottom region of the vacuum chamber. The CVD apparatus also has a gas delivery ring with an outlet disposed under the gas import. A pressure near the outlet of the gas delivery ring is smaller than that of the rest of the vacuum chamber.
    Type: Grant
    Filed: March 10, 2014
    Date of Patent: August 22, 2017
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hsiang-Wei Lin, Chia-Ho Chen
  • Publication number: 20170053875
    Abstract: The present disclosure relates to an integrated circuit device and an associated method of formation. The integrated circuit device includes a substrate, and a conductive metal interconnect line arranged within a dielectric material disposed over the substrate. An interfacial layer is in contact with an upper surface of the conductive metal interconnect line. An upper dielectric layer is arranged over the interfacial layer. A middle dielectric layer is arranged between the upper dielectric layer and the interfacial layer.
    Type: Application
    Filed: November 4, 2016
    Publication date: February 23, 2017
    Inventors: Su-Jen Sung, Chih-Chiang Chang, Chia-Ho Chen
  • Patent number: 9543125
    Abstract: Plasma-enhanced chemical vapor deposition (PECVD) devices enable the generation of a plasma in a plasma zone of a deposition chamber, which reacts with a surface of a substrate to form a deposited film in the fabrication of a semiconductor component. The plasma generator is often positioned over the center of the substrate, and the generated plasma often remains in the vicinity of the plasma generator, resulting in a thicker deposition near the center than at the edges of the substrate. Tighter process control is achievable by positioning one or more electromagnets in a periphery of the plasma zone and supplying power to generate a magnetic field, thereby inducing the charged plasma to achieve a more consistent distribution within the plasma zone and more uniform deposition on the substrate. Variations in the number, configuration, and powering of the electromagnets enable various redistributive effects on the plasma within the plasma zone.
    Type: Grant
    Filed: April 3, 2013
    Date of Patent: January 10, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Hsiang-Wei Lin, Chia-Ho Chen, Bo-Hung Lin
  • Patent number: 9490209
    Abstract: Integrated circuit devices and method of forming them. The devices include a dielectric barrier layer formed over a copper-containing metal interconnect structure. The dielectric barrier layer inhibits electro-migration of Cu. The dielectric barrier layer includes a metal-containing layer that forms an interface with the interconnect structure. Incorporating metal within the interfacial layer improves adhesion of the dielectric barrier layer to copper lines and the like and provides superior electro-migration resistance over the operating lifetime of the devices.
    Type: Grant
    Filed: August 15, 2013
    Date of Patent: November 8, 2016
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Su-Jen Sung, Chih-Chiang Chang, Chia-Ho Chen
  • Patent number: 9478480
    Abstract: In accordance with an embodiment, a structure comprises a substrate having a first area and a second area; a through substrate via (TSV) in the substrate penetrating the first area of the substrate; an isolation layer over the second area of the substrate, the isolation layer having a recess; and a conductive material in the recess of the isolation layer, the isolation layer being disposed between the conductive material and the substrate in the recess.
    Type: Grant
    Filed: November 14, 2014
    Date of Patent: October 25, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Yu Tsai, Shih-Hui Wang, Chien-Ming Chiu, Chia-Ho Chen, Fang Wen Tsai, Weng-Jin Wu, Jing-Cheng Lin, Wen-Chih Chiou, Shin-Puu Jeng, Chen-Hua Yu
  • Patent number: 9287154
    Abstract: Embodiments of an ultraviolet (UV) curing system for treating a semiconductor substrate such as a wafer are disclosed. The curing system generally includes a processing chamber, a wafer support for holding a wafer in the chamber, a UV radiation source disposed above the chamber, and a UV transparent window interspersed between the radiation source and wafer support. In one embodiment, the wafer support is provided by a belt conveyor operable to transport wafers through the chamber during UV curing. In another embodiment, the UV radiation source is a movable lamp unit that travels across the top of the chamber for irradiating the wafer. In another embodiment, the UV transparent window includes a UV radiation modifier that reduces the intensity of UV radiation on portions of the wafer positioned below the modifier. Various embodiments enhance wafer curing uniformity by normalizing UV intensity levels on the wafer.
    Type: Grant
    Filed: June 1, 2012
    Date of Patent: March 15, 2016
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ming Huei Lien, Chia-Ho Chen, Shu-Fen Wu, Chih-Tsung Lee, You-Hua Chou
  • Patent number: 9234278
    Abstract: The present disclosure relates to a guiding element for guiding gas flow within a chamber. The guiding element includes a structure, one or more inlets, an outlet, and a transportation region. The one or more inlets are formed on a first side of the structure. The inlets have inlet sizes selected according to a removal rate and to mitigate gas flow variations within the chamber. The outlet is on a second side of the structure, opposite the first side of the structure. The outlet has an outlet size selected according to the removal rate. The transportation region is within the structure and couples or connects the inlets to the outlet.
    Type: Grant
    Filed: January 20, 2012
    Date of Patent: January 12, 2016
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: You-Hua Chou, Chih-Tsung Lee, Chia-Ho Chen, Chin-Hsiang Lin
  • Patent number: 9218998
    Abstract: An electrostatic chuck for clamping a warped workpiece has a clamping surface comprising a dielectric layer. The dielectric layer has a field and one or more zones formed of differing dielectric materials. One or more electrodes are coupled to a power supply, and a controller controls a clamping voltage supplied to the one or more electrodes via the power supply. An electrostatic attraction force associated with each of the field and one or more zones of the dielectric layer of the electrostatic chuck is induced, wherein the electrostatic attraction force varies based on the dielectric material of each of the field and one or more zones. The electrostatic attraction force is greater in the one or more zones than in the field, therein attracting warped regions of the workpiece to the clamping surface and clamping the warped workpiece to the clamping surface across a surface of the warped workpiece.
    Type: Grant
    Filed: October 3, 2014
    Date of Patent: December 22, 2015
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chia-Ho Chen, Ming Huei Lien, Shu-Fen Wu, Chih-Tsung Lee, You-Hua Chou
  • Publication number: 20150316956
    Abstract: The present disclosure provides a touch device. The touch device comprises a sensor electrode layer, a conductive jumper and a dielectric layer. The sensor electrode layer includes conductive sensors. The conductive jumper is configured to electrically connect the conductive sensors. Moreover, the dielectric layer has a patterned surface, which physically contacts the conductive jumper and embeds therein a portion of the conductive jumper.
    Type: Application
    Filed: May 4, 2015
    Publication date: November 5, 2015
    Inventors: Jing Yu, Tsung-Ke Chiu, Yan Lin, Shaoyi Sun, Shixing Song, Chia-Ho Chen, Zhen Xu
  • Publication number: 20150252475
    Abstract: The present disclosure relates to a chemical vapor deposition apparatus and associated methods. In some embodiments, the CVD apparatus has a vacuum chamber and a gas import having a gas import axis through which a process gas is imported into the vacuum chamber and being arranged near an upper region of the vacuum chamber. At least one exhaust port is arranged near a bottom region of the vacuum chamber. The CVD apparatus also has a gas delivery ring with an outlet disposed under the gas import. A pressure near the outlet of the gas delivery ring is smaller than that of the rest of the vacuum chamber.
    Type: Application
    Filed: March 10, 2014
    Publication date: September 10, 2015
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hsiang-Wei Lin, Chia-Ho Chen
  • Publication number: 20150069580
    Abstract: In accordance with an embodiment, a structure comprises a substrate having a first area and a second area; a through substrate via (TSV) in the substrate penetrating the first area of the substrate; an isolation layer over the second area of the substrate, the isolation layer having a recess; and a conductive material in the recess of the isolation layer, the isolation layer being disposed between the conductive material and the substrate in the recess.
    Type: Application
    Filed: November 14, 2014
    Publication date: March 12, 2015
    Inventors: Chen-Yu Tsai, Shih-Hui Wang, Chien-Ming Chiu, Chia-Ho Chen, Fang Wen Tsai, Weng-Jin Wu, Jing-Cheng Lin, Wen-Chih Chiou, Shin-Puu Jeng, Chen-Hua Yu