Abstract: The present disclosure is directed to methods for the fabrication of buried layers in gate-all-around (GAA) transistor structures to suppress junction leakage. In some embodiments, the method includes forming a doped epitaxial layer on a substrate, forming a stack of alternating first and second nano-sheet layers on the epitaxial layer, and patterning the stack and the epitaxial layer to form a fin structure. The method includes forming a sacrificial gate structure on the fin structure, removing portions of the fin structure not covered by the sacrificial gate structure, and etching portions of the first nano-sheet layers. Additionally, the method includes forming spacer structures on the etched portions of the first nano-sheet layers and forming source/drain (S/D) epitaxial structures on the epitaxial layer abutting the second nano-sheet layers.

Abstract: Embodiments utilize a two layer inner spacer structure during formation of the inner spacers of a nano-FET device. The materials of the first inner spacer layer and second inner spacer layer can be selected to have a mismatch in their coefficients of thermal expansion (CTE). As the structure cools after deposition, the inner spacer layer which has a larger CTE will exhibit compressive stress on the other inner spacer layer, however, because the two layers have a common interface, the layer with the smaller CTE will exhibit a counter acting tensile stress.

Abstract: An atomization module includes a main fixing member, an auxiliary fixing member, an atomization component and a piezoelectric component. The main fixing member includes a first bonding part, a second bonding part and a connecting part. The first bonding part has a first opening and a first bonding surface surrounding the first opening. The second bonding part is connected to the first bonding part, and the connecting part and the second bonding part surround the first bonding part. The auxiliary fixing member has a second opening and a second bonding surface surrounding the second opening. The piezoelectric component surrounds the first bonding part. The main fixing member has a first adhesive groove, which is jointly defined at least by the main fixing member, the auxiliary fixing member and the atomization component. The first adhesive is provided in the first adhesive groove.

Abstract: A semiconductor package includes a semiconductor die, a redistribution structure and connective terminals. The redistribution structure is disposed on the semiconductor die and includes a first metallization tier disposed in between a pair of dielectric layers. The first metallization tier includes routing conductive traces electrically connected to the semiconductor die and a shielding plate electrically insulated from the semiconductor die. The connective terminals include dummy connective terminals and active connective terminals. The dummy connective terminals are disposed on the redistribution structure and are electrically connected to the shielding plate. The active connective terminals are disposed on the redistribution structure and are electrically connected to the routing conductive traces. Vertical projections of the dummy connective terminals fall on the shielding plate.

Abstract: An integrated circuit package including electrically floating metal lines and a method of forming are provided. The integrated circuit package may include integrated circuit dies, an encapsulant around the integrated circuit dies, a redistribution structure on the encapsulant, a first electrically floating metal line disposed on the redistribution structure, a first electrical component connected to the redistribution structure, and an underfill between the first electrical component and the redistribution structure. A first opening in the underfill may expose a top surface of the first electrically floating metal line.

Abstract: Provided is a tap cell including a substrate, a first well, a second well, a first doped region, and the second doped region. The substrate has a first region and a second region. The first well has a first dopant type and includes a first portion disposed in the first region and a second portion extending into the second region. The second well has a second dopant type and includes a third portion disposed in the second region and a fourth portion extending into the first region. The first doped region having the first dopant type is disposed in the second portion of the first well and the third portion of the second well along the second region. The second doped region having the second dopant type is disposed in the first portion of the first well and the fourth portion of the second well along the first region.

Abstract: An electronic device which is capable of being bent in a first direction and includes a plurality of light-emitting units and a plurality of conductive patterns overlapping with at least a portion of the plurality of light-emitting units and extending in a second direction. The first direction and the second direction have an angle ? of not greater than 30 degrees.

Abstract: This disclosure provides systems, methods and apparatus, including computer programs encoded on computer storage media, for switching a secondary cell to a primary cell. A user equipment (UE) monitors a first radio condition of the UE for beams of a primary cell and a second radio condition for beams of one or more secondary cells configured for the UE in carrier aggregation. The UE transmits a request to configure a candidate beam of at least one candidate secondary cell as a new primary cell in response to the first radio condition not satisfying a first threshold and the second radio condition for the at least one candidate secondary cell satisfying a second threshold. A base station determines to reconfigure at least one secondary cell as the new primary cell. The base station and the UE perform a handover of the UE to the new primary cell.

Abstract: A semiconductor structure includes a functional die, a dummy die, a redistribution structure, a seal ring and an alignment mark. The dummy die is electrically isolated from the functional die. The redistribution structure is disposed over and electrically connected to the functional die. The seal ring is disposed over the dummy die. The alignment mark is between the seal ring and the redistribution structure, wherein the alignment mark is electrically isolated from the dummy die, the redistribution structure and the seal ring. The insulating layer encapsulates the functional die and the dummy die.

Abstract: Electrostatic discharge (ESD) structures are provided. An ESD structure includes a semiconductor substrate, a first epitaxy region with a first type of conductivity over the semiconductor substrate, a second epitaxy region with a second type of conductivity over the semiconductor substrate, and a plurality of semiconductor layers. The semiconductor layers are stacked over the semiconductor substrate and between the first and second epitaxy regions. A first conductive feature is formed over the first epitaxy region and outside an oxide diffusion region. A second conductive feature is formed over the second epitaxy region and outside the oxide diffusion region. A third conductive feature is formed over the first epitaxy region and within the oxide diffusion region. A fourth conductive feature is formed over the second epitaxy region and within the oxide diffusion region. The oxide diffusion region is disposed between the first and second conductive features.

Abstract: A button mechanism includes a button, a module, and a thin sheet spring. The thin sheet spring is in physical communication with the button and with the module. The thin sheet spring exerts a tension force on the button and the module to bias the button toward a normal position. In response to a force greater than the tension force being exerted on the button, a portion of the thin sheet stretches to enable the button to be placed in a contact position. In response to the force being removed from the button, the tension force causes the thin sheet to snap back to an original position and biases the button toward the normal position.

Abstract: A semiconductor device and a method of fabricating the semiconductor device are disclosed. The semiconductor device includes a substrate, a fin base disposed on the substrate, nanostructured channel regions disposed on a first portion of the fin base, a gate structure surrounding the nanostructured channel regions, a source/drain (S/D) region disposed on a second portion of the fin base, and an isolation structure disposed between the S/D region and the second portion of the fin base. The isolation structure includes an undoped semiconductor layer disposed on the second portion of the fin base, a silicon-rich dielectric layer disposed on the undoped semiconductor layer, and an air spacer disposed on the silicon-rich dielectric layer.

Abstract: The present invention provides an orientation adjustment device and an orientation adjustment method of a displayed image. The orientation adjustment method includes the following steps. Step 1 is to capture a first image frame and a second image frame sequentially by an image capturing unit. Step 2 is to obtain a plurality of a first pixel eigenvalues near a first side in the first image frame. Step 3 is to obtain a plurality of a second pixel eigenvalues near the first side in the second image frame. Step 4 is to obtain a difference eigenvalue according to the first pixel eigenvalue and the second pixel eigenvalue. Step 5 is to rotate the image frames output by the image capture unit so that the first side is corresponding to the predetermined display side if the difference eigenvalue is greater than a threshold.

Abstract: This invention discovers a purification method for isolating an extract containing chlorosesamone from roots of genus Sesamum plants, and its application. In this invention, D2 fraction containing chlorosesamone is obtained through an extraction step and a separation step. Then, through further purification step, chlorosesamone is obtained. In the experiment of this invention, D2 fraction or chlorosesamone extracted from roots of Sesamum indicum, a plant of genus Sesamum, can be used for the anticancer treatment for cancer cells of breast, liver, blood and lung.

Abstract: A health savings management system installed and downloaded to a mobile device. The system includes an identity recording module, for recording gender, age and life deposit value. The identity recording module has a built-in predetermined age. A calculation module for performing a calculation based on the predetermined age and the inputted gender, age and life deposit value to obtain a total health credit limit and display the total health credit limit. A deduction module has a built-in and predetermined comparison standard value, and records physical condition, sickness, dietary habit, and rest, and comparing with the comparison standard value and then generating a deduction value. The calculation module adds up the predetermined age and the total health credit limit to change the numerical value of a total health credit limit according to the deduction value generated by the deduction module.

Abstract: An epiphyseal plate clamping device, comprising: a pair of clamping pieces each having at least two through holes; and at least two screw assemblies to correspond to the at least two through holes of the pair of clamping pieces; where, the pair of clamping pieces are used to be placed upon two sides of an epiphyseal plate zone of a longer leg of an LLD patient, and the at least two screw assemblies are used to penetrate through a femur or tibia of the longer leg along at least two paths guided by the at least two through holes of the pair of clamping pieces to clamp an epiphyseal plate within the epiphyseal plate zone, thereby retarding a growth of new bone from the epiphyseal plate.

Abstract: Electronic devices and methods for providing location information are provided, of which a representative method includes: generating sensor readings corresponding to sensed motion of the electronic device; determining a reference location information; computing a GPS-fused location information based on the reference location information and the sensor readings; generating a GPS-required event based on a change of the GPS-fused location information; generating a GPS-not-required event responsive to the reference location information being determined; receiving the GPS-fused location information and one of either the GPS-required event or the GPS-not-required event; responsive to the GPS-required event being received, operating the GPS receiver in a location information-acquiring mode during which the GPS receiver generates geographical location readings; and responsive to the GPS-not-required event being received, operating the GPS receiver in a power-saving mode during which the GPS receiver is deactivated.

Abstract: This invention discovers a purification method for isolating an extract containing chlorosesamone from roots of genus Sesamum plants, and its application. In this invention, D2 fraction containing chlorosesamone is obtained through an extraction step and a separation step. Then, through further purification step, chlorosesamone is obtained. In the experiment of this invention, D2 fraction or chlorosesamone extracted from roots of Sesamum indicum, a plant of genus Sesamum, can be used for the anticancer treatment for cancer cells of breast, liver, blood and lung.