Abstract: Provided are pamoate salts of ketamine having a stoichiometry of 2:1 of ketamine to pamoate, including R, S-ketamine pamoate, S-ketamine pamoate, or R-ketamine pamoate, and crystalline or amorphous forms of the pamoate salts, and having excellent safety and properties for pharmaceutical applications. Also provided are pharmaceutical compositions including the pamoate salts of ketamine and their uses in treating a CNS disease or serving as an anesthetic.

Abstract: An electronic package is provided, in which electronic elements and at least one packaging module including a semiconductor chip and a shielding structure covering the semiconductor chip are disposed on a carrier structure, an encapsulation layer encapsulates the electronic elements and the packaging module, and a shielding layer is formed on the encapsulation layer and in contact with the shielding structure. Therefore, the packaging module includes the semiconductor chip and the shielding structure and has a chip function and a shielding wall function simultaneously.

Abstract: An over-current protection device includes first and second electrode layers and a PTC material layer laminated therebetween. The PTC material layer includes a polymer matrix, and a conductive filler. The polymer matrix has a fluoropolymer. The total volume of the PTC material layer is calculated as 100%, and the fluoropolymer accounts for 47-62% by volume of the PTC material layer. The fluoropolymer has a melt viscosity higher than 3000 Pa·s.

Abstract: An over-current protection device includes a first metal layer, a second metal layer and a heat-sensitive layer laminated therebetween. The heat-sensitive layer exhibits a positive temperature coefficient (PTC) characteristic and includes a polymer matrix and a first conductive filler. The polymer matrix includes a polyolefin-based polymer and a fluoropolymer. The fluoropolymer has a melt flow index higher than 1.9 g/10 min, and the polyolefin-based polymer and the fluoropolymer together form an interpenetrating polymer network (IPN). The first conductive filler has a metal-ceramic compound dispersed in the polymer matrix.

Abstract: An over-current protection device includes a first metal layer, a second metal layer and a heat-sensitive layer laminated therebetween. The heat-sensitive layer exhibits a positive temperature coefficient (PTC) characteristic and includes a first polymer and a conductive filler. The first polymer consists of polyvinylidene difluoride (PVDF), and PVDF exists in different phases such as ?-PVDF, ?-PVDF and ?-PVDF. The total amount of ?-PVDF, ?-PVDF and ?-PVDF is calculated as 100%, and the amount of ?-PVDF accounts for 48% to 55%. The conductive filler has a metal-ceramic compound.

Abstract: An over-current protection device includes a first metal layer, a second metal layer and a heat-sensitive layer laminated therebetween. The heat-sensitive layer exhibits a positive temperature coefficient (PTC) characteristic and includes a first polymer and a conductive filler. The first polymer consists of polyvinylidene difluoride (PVDF), and PVDF exists in different phases such as ?-PVDF, ?-PVDF and ?-PVDF. The total amount of ?-PVDF, ?-PVDF and ?-PVDF is calculated as 100%, and the amount of ?-PVDF accounts for 33% to 42%.

Abstract: An electronic device includes a casing, a circuit board and a grounding assembly. The circuit board has a first surface and a second surface, wherein an input terminal and an output terminal are disposed on the second surface. The grounding assembly comprises a conducting terminal, a first grounding element and a second grounding element. The conducting terminal is disposed on the first surface of the circuit board, and the first grounding element is disposed adjacent to the conducting terminal. The first grounding element penetrates the circuit board and electrically couples with the conducting terminal and the casing, and the second grounding element correspondingly penetrates the circuit board and the conducting element, so that a first portion of the second grounding element electrically couples with the input terminal and the output terminal of the circuit board, and a second portion of the second grounding element electrically couples with the conducting terminal.

Abstract: In some implementations, one or more semiconductor processing tools may form a metal cap on a metal gate. The one or more semiconductor processing tools may form one or more dielectric layers on the metal cap. The one or more semiconductor processing tools may form a recess to the metal cap within the one or more dielectric layers. The one or more semiconductor processing tools may perform a bottom-up deposition of metal material on the metal cap to form a metal plug within the recess and directly on the metal cap.

Abstract: A chip-scale linear light-emitting device includes a submount substrate, light-emitting diode (LED) semiconductor chips, a chip-scale packaging structure and a reflective structure. The LED semiconductor chips, the packaging structure and the reflective structure are disposed on the submount substrate, wherein the packaging structure partially covers the chip-upper surface and/or the chip-edge surfaces of the LED semiconductor chips, and the reflective structure partially covers the package-top surface and/or the package-side surfaces of the packaging structure. If one of the chip-edge surfaces and the package-side surface of the packaging structure are exposed from the reflective structure as a primary light-emitting side surface, a side-view type linear light-emitting device is formed. If the package-top surface of the packaging structure is exposed from the reflective structure as a primary light-emitting top surface, a top-view type linear light-emitting device is formed.

Abstract: An asymmetrically shaped chip-scale packaging (CSP) light-emitting device (LED) includes an LED chip, a photoluminescent structure (or a light-transmitting structure), and a reflective structure. The photoluminescent structure covers the upper surface and/or the edge surface of the LED chip; and the reflective structure at least partially covers the edge surface of the photoluminescent structure. The reflective structure partially reflects the primary light emitted from the edge surface of the LED chip or the converted secondary light radiated from the edge surface of the photoluminescent structure, therefore shaping the radiation pattern asymmetrically.

Abstract: A proximity detection method is for detecting if a user is proximate to a proximity detection keyboard, and the proximity detection keyboard includes a plurality of electrodes and at least one grounding element, which is disposed correspondingly to the electrodes. The proximity detection method includes an equivalent capacitance detecting step and a proximity event determining step. The equivalent capacitance detecting step is for detecting an equivalent capacitance of each of the electrodes. The equivalent capacitance of each of the electrodes is defined by a corresponding proximity capacitance and a corresponding parasitic capacitance. A proximity event determining step is for comparing the equivalent capacitance of at least one of the electrodes and a corresponding capacitance threshold value to determine if a proximity event is existed. The electrodes are respectively corresponding to the capacitance threshold values being predetermined.

Abstract: A chip-scale linear light-emitting device includes a submount substrate, light-emitting diode (LED) semiconductor chips, a chip-scale packaging structure and a reflective structure. The LED semiconductor chips, the packaging structure and the reflective structure are disposed on the submount substrate, wherein the packaging structure partially covers the chip-upper surface and/or the chip-edge surfaces of the LED semiconductor chips, and the reflective structure partially covers the package-top surface and/or the package-side surfaces of the packaging structure. If one of the chip-edge surfaces and the package-side surface of the packaging structure are exposed from the reflective structure as a primary light-emitting side surface, a side-view type linear light-emitting device is formed. If the package-top surface of the packaging structure is exposed from the reflective structure as a primary light-emitting top surface, a top-view type linear light-emitting device is formed.

Abstract: An asymmetrically shaped chip-scale packaging (CSP) light-emitting device (LED) includes an LED chip, a photoluminescent structure (or a light-transmitting structure), and a reflective structure. The photoluminescent structure covers the upper surface and/or the edge surface of the LED chip; and the reflective structure at least partially covers the edge surface of the photoluminescent structure. The reflective structure partially reflects the primary light emitted from the edge surface of the LED chip or the converted secondary light radiated from the edge surface of the photoluminescent structure, therefore shaping the radiation pattern asymmetrically.

Abstract: A chip-scale linear light-emitting device includes a submount substrate, light-emitting diode (LED) semiconductor chips, a chip-scale packaging structure and a reflective structure. The LED semiconductor chips, the packaging structure and the reflective structure are disposed on the submount substrate, wherein the packaging structure partially covers the chip-upper surface and/or the chip-edge surfaces of the LED semiconductor chips, and the reflective structure partially covers the package-top surface and/or the package-side surfaces of the packaging structure. If one of the chip-edge surfaces and the package-side surface of the packaging structure are exposed from the reflective structure as a primary light-emitting side surface, a side-view type linear light-emitting device is formed. If the package-top surface of the packaging structure is exposed from the reflective structure as a primary light-emitting top surface, a top-view type linear light-emitting device is formed.

Abstract: An asymmetrically shaped chip-scale packaging (CSP) light-emitting device (LED) includes an LED chip, a photoluminescent structure (or a light-transmitting structure), and a reflective structure. The photoluminescent structure covers the upper surface and/or the edge surface of the LED chip; and the reflective structure at least partially covers the edge surface of the photoluminescent structure. The reflective structure partially reflects the primary light emitted from the edge surface of the LED chip or the converted secondary light radiated from the edge surface of the photoluminescent structure, therefore shaping the radiation pattern asymmetrically.

Abstract: A chip-scale linear light-emitting device includes a submount substrate, light-emitting diode (LED) semiconductor chips, a chip-scale packaging structure and a reflective structure. The LED semiconductor chips, the packaging structure and the reflective structure are disposed on the submount substrate, wherein the packaging structure partially covers the chip-upper surface and/or the chip-edge surfaces of the LED semiconductor chips, and the reflective structure partially covers the package-top surface and/or the package-side surfaces of the packaging structure. If one of the chip-edge surfaces and the package-side surface of the packaging structure are exposed from the reflective structure as a primary light-emitting side surface, a side-view type linear light-emitting device is formed. If the package-top surface of the packaging structure is exposed from the reflective structure as a primary light-emitting top surface, a top-view type linear light-emitting device is formed.

Abstract: An asymmetrically shaped chip-scale packaging (CSP) light-emitting device (LED) includes an LED chip, a photoluminescent structure (or a light-transmitting structure), and a reflective structure. The photoluminescent structure covers the upper surface and/or the edge surface of the LED chip; and the reflective structure at least partially covers the edge surface of the photoluminescent structure. The reflective structure partially reflects the primary light emitted from the edge surface of the LED chip or the converted secondary light radiated from the edge surface of the photoluminescent structure, therefore shaping the radiation pattern asymmetrically.

Abstract: A fabric weaved at least by a first yarn and a second yarn is provided. A first quantum dot material is distributed in the first yarn, and a second quantum dot material is distributed in the second yarn. An average particle size of the first quantum dot material is different from the average particle size of the second quantum dot material.

Abstract: An electronic device includes a chassis, a cooler, and a fan assembly. The chassis includes a bottom plate and defines an air inlet and an air outlet. The cooler is secured to the bottom plate. The fan assembly is secured to the bottom plate and defines a case and a roller received in the case. The roller includes a shaft and a number of blades secured to the shaft. An area of the air inlet is greater than an area of the air outlet. The fan assembly is capable of drawing in air into the roller. The air flows into the air inlet along a first direction. The air flows out of the air outlet along a second direction. The first direction is substantially parallel to the second direction. The first direction is substantially perpendicular to the shaft.

Abstract: A side view light emitting diode (LED) package structure includes a package housing, a side view LED chip and a thermal conductive member. The side view LED chip is enclosed by the package housing and an emitting direction of the side view LED chip is perpendicular to a thickness direction of a substrate. The thermal conductive member connected with the side view LED chip is disposed inside the package housing and a portion of which extends out of a dissipation opening of the package housing to be exposed so that heat of the side view LED chip is dissipated.