Abstract: Various embodiments of the present disclosure are directed towards an integrated chip comprising a memory cell. The memory cell is disposed within a dielectric structure that overlies a substrate. The memory cell comprises a data storage structure disposed between a bottom electrode and a top electrode. An upper conductive structure is disposed in the dielectric structure and on the top electrode. The upper conductive structure comprises a protrusion disposed below an upper surface of the top electrode. A sidewall spacer structure is disposed around the memory cell. The sidewall spacer structure comprises a first sidewall spacer layer around the data storage structure and a second sidewall spacer layer abutting the first sidewall spacer layer. The protrusion contacts the second sidewall spacer layer.

Abstract: A semiconductor structure includes a conductive layer, an IMD layer and a plurality of protrusions. The IMD layer is formed on the conductive layer and has a first etch rate. Each protrusion includes an etching slowing layer, a lower electrode and a MTJ layer, wherein the etching slowing layer is formed on the IMD layer and has a second etch rate, the lower electrode passes through the IMD layer and the etching slowing layer, and the MTJ layer is formed on the lower electrode. The second etch rate is less than the first etch rate.

Abstract: In some implementations described herein, a capacitor structure may include a metal-insulator-metal structure in which work function metal layers are included between the insulator layer of the capacitor structure and the conductive electrode layers of the capacitor structure. The work function metal layers may enable high-k dielectric materials to be used for the insulator layer in that the work function metal layers may provide an increased electron barrier height between the insulator layer and the conductive electrode layers, which may increase the breakdown voltage and may reduce the current leakage for the capacitor structure.

Abstract: An integrated circuit fabrication method comprises: providing a semiconductor wafer including a dielectric layer disposed over a copper or copper alloy layer; forming a via opening in the dielectric layer exposing a portion of the copper or copper alloy layer; disposing a copper-barrier layer in the via opening; disposing an oxophilic layer on the copper-barrier layer wherein the semiconductor wafer is not exposed to air between an end of the disposing of the copper-barrier layer and a start of the disposing of the oxophilic layer; after disposing the oxophilic layer, filling the via opening with tungsten to form a tungsten via; and forming an electronic device in electrical contact with the copper or copper alloy layer by way of the tungsten via.

Abstract: Various embodiments of the present disclosure are directed towards an integrated circuit (IC) including a plurality of conductive contacts overlying a semiconductor substrate. A plurality of first conductive wires is disposed on the plurality of conductive contacts. A plurality of conductive vias overlies the first conductive wires. An etch stop structure is disposed on the first conductive wires. The plurality of conductive vias extend through the etch stop structure. The etch stop structure includes a first etch stop layer, a first insulator layer, and a second etch stop layer. The first insulator layer is disposed between the first etch stop layer and the second etch stop layer.

Abstract: A semiconductor structure includes a bottom electrode, a magnetic tunneling junction stack over the bottom electrode, a top electrode over the magnetic tunneling junction stack, a first dielectric layer under the bottom electrode, a second dielectric layer under the first dielectric layer. The first dielectric layer has a first chemical bond energy and the second dielectric layer has a second chemical bond energy less than the first chemical bond energy.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming an integrated chip. The method includes forming a memory cell stack over a substrate. The memory cell stack includes a top electrode. A sidewall spacer structure is formed around the memory cell stack. The sidewall spacer structure includes a first sidewall spacer layer, a second sidewall spacer layer, and a protective sidewall spacer layer sandwiched between the first and second sidewall spacer layers. A dielectric structure is formed over the sidewall spacer structure. A first etch process is performed on the dielectric structure and the second sidewall spacer layer to define an opening above the top electrode. The second sidewall spacer layer and the dielectric structure are etched at a higher rate than the protective sidewall spacer layer during the first etch process. A top electrode via is formed within the opening.

Abstract: A method for controlling a heating process may include recognizing a food class of a food item, defining a target doneness score for the food item based on at least one of the food class and a desired doneness level, receiving a food humidity level, receiving a cavity humidity level, receiving a cavity temperature, determining a current doneness score of the food item according to the food humidity level, the cavity humidity level and the cavity temperature, and utilizing the current doneness score and the target doneness score to control a heating system to cook the food item.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming an integrated chip. The method includes forming a memory cell stack over a substrate. The memory cell stack includes a top electrode. A sidewall spacer structure is formed around the memory cell stack. The sidewall spacer structure includes a first sidewall spacer layer, a second sidewall spacer layer, and a protective sidewall spacer layer sandwiched between the first and second sidewall spacer layers. A dielectric structure is formed over the sidewall spacer structure. A first etch process is performed on the dielectric structure and the second sidewall spacer layer to define an opening above the top electrode. The second sidewall spacer layer and the dielectric structure are etched at a higher rate than the protective sidewall spacer layer during the first etch process. A top electrode via is formed within the opening.

Abstract: A method for manufacturing reflective structure is provided. The method includes the operations as follows. A metallization structure is received. A plurality of conductive pads are formed over the metallization structure. A plurality of dielectric stacks are formed over the conductive pads, respectively, wherein the thicknesses of the dielectric stacks are different. The dielectric stacks are isolated by forming a plurality of trenches over a plurality of intervals between each two adjacent dielectric stacks.

Abstract: In some embodiments, the present disclosure relates to a display device that includes a reflector electrode coupled to an interconnect structure. An isolation structure is disposed over the reflector electrode, and a transparent electrode is disposed over the isolation structure. Further, an optical emitter structure is disposed over the transparent electrode. A via structure extends from a top surface of the isolation structure to the reflector electrode and comprises an outer portion that directly overlies the top surface of the isolation structure. A hard mask layer is arranged directly between the top surface of the isolation structure and the outer portion of the via structure.

Abstract: In some embodiments, the present disclosure relates to a display device that includes a reflector electrode coupled to an interconnect structure. An isolation structure is disposed over the reflector electrode, and a transparent electrode is disposed over the isolation structure. Further, an optical emitter structure is disposed over the transparent electrode. A via structure extends from a top surface of the isolation structure to the reflector electrode and comprises an outer portion that directly overlies the top surface of the isolation structure. A hard mask layer is arranged directly between the top surface of the isolation structure and the outer portion of the via structure.

Abstract: A safety socket is disclosed, comprising a socket body, an outer mold sleeve, a torsion rotating spring and a protective block body, and when any foreign object may be potentially inserted into the socket body, the foreign object will be effectively blocked by the protective block body such that it cannot smoothly enter therein, thus achieving the feature of safety protection.

Abstract: An ear-pod type thermometer includes a base and an ear part. The ear part is inserted into a user's ear. The ear part includes a temperature sensor which detects the user's temperature. The base includes at least one light emitting member which displays different colors of light responsive to the detected temperature, so that the wearer's temperature can be displayed and easily monitored.

Abstract: A method for manufacturing reflective structure is provided. The method includes the operations as follows. A metallization structure is received. A plurality of conductive pads are formed over the metallization structure. A plurality of dielectric stacks are formed over the conductive pads, respectively, wherein the thicknesses of the dielectric stacks are different. The dielectric stacks are isolated by forming a plurality of trenches over a plurality of intervals between each two adjacent dielectric stacks.