Patents by Inventor Chia-Jong Liu
Chia-Jong Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20160163797Abstract: The present invention provides a semiconductor structure, comprising a substrate, a gate structure, a source/drain region and at least a dislocation. The gate structure is disposed on the substrate. The source/drain region is disposed in the substrate at two sides of the gate structure. The dislocation is located in the source/drain region, and is asymmetrical relating to a middle axis of the source/drain region.Type: ApplicationFiled: January 11, 2015Publication date: June 9, 2016Inventors: Wen-Jiun Shen, Chia-Jong Liu, Chung-Fu Chang, Yen-Liang Wu, Man-Ling Lu, Yi-Wei Chen, Jhen-Cyuan Li
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Publication number: 20160163837Abstract: A field effect transistor (FinFET) device includes a substrate, a fin structure, a shallow trench isolation and a gate structure. The fin structure is formed on a surface of the substrate and includes a base fin structure and an epitaxial fin structure formed on the base fin structure. The shallow trench isolation structure is formed on the surface of the substrate and includes a peripheral zone and a concave zone. The peripheral zone physically contacts with the fin structure. The gate structure is disposed on the epitaxial fin structure perpendicularly. A method of fabricating the aforementioned field effect transistor is also provided.Type: ApplicationFiled: February 18, 2016Publication date: June 9, 2016Applicant: UNITED MICROELECTRONICS CORPORATIONInventors: YEN-LIANG WU, CHUNG-FU CHANG, YU-HSIANG HUNG, SSU-I FU, WEN-JIUN SHEN, MAN-LING LU, CHIA-JONG LIU, YI-WEI CHEN
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Publication number: 20160148998Abstract: A FINFET structure is provided. The FINFET structure includes a substrate, a PMOS element, a NMOS element, a STI structure, and a bump structure. The substrate includes a first area and a second area adjacent to the first area. The PMOS element is disposed in the first area of the substrate, and includes at least one first fin structure. The NMOS element is disposed in the second area of the substrate and includes at least one second fin structure. The STI structure is disposed between the first fin structure and the second fin structure. The bump structure is disposed on the STI structure and has a carbon-containing dielectric material.Type: ApplicationFiled: November 20, 2014Publication date: May 26, 2016Applicant: UNITED MICROELECTRONICS CORPORATIONInventors: YEN-LIANG WU, CHUNG-FU CHANG, WEN-JIUN SHEN, MAN-LING LU, CHIA-JONG LIU, YI-WEI CHEN
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Publication number: 20160071844Abstract: A fin-shaped structure includes a substrate having a first fin-shaped structure located in a first area and a second fin-shaped structure located in a second area, wherein the second fin-shaped structure includes a ladder-shaped cross-sectional profile part. The present invention also provides two methods of forming this fin-shaped structure. In one case, a substrate having a first fin-shaped structure and a second fin-shaped structure is provided. A treatment process is performed to modify an external surface of the top of the second fin-shaped structure, thereby forming a modified part. A removing process is performed to remove the modified part through a high removing selectivity to the first fin-shaped structure and the second fin-shaped structure, and the modified part, thereby the second fin-shaped structure having a ladder-shaped cross-sectional profile part is formed.Type: ApplicationFiled: October 13, 2014Publication date: March 10, 2016Inventors: Wen-Jiun Shen, Ssu-I Fu, Yen-Liang Wu, Chia-Jong Liu, Yu-Hsiang Hung, Chung-Fu Chang, Man-Ling Lu, Yi-Wei Chen
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Publication number: 20160064521Abstract: A method of manufacturing a semiconductor device including the steps of providing a substrate having first type semiconductor regions and second type semiconductor regions, forming a conformal first epitaxy mask layer on the substrate, forming first type epitaxial layer in the substrate of the first type semiconductor regions, forming a conformal second epitaxy mask layer on the substrate, forming second type epitaxial layer in the substrate of the second type semiconductor regions, and removing the second epitaxy mask layer.Type: ApplicationFiled: November 8, 2015Publication date: March 3, 2016Inventors: Yu-Hsiang Hung, Chung-Fu Chang, Chia-Jong Liu, Yen-Liang Wu, Pei-Yu Chou, Home-Been Cheng
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Publication number: 20160049496Abstract: A MOS transistor including a gate structure, an epitaxial spacer and an epitaxial structure is provided. The gate structure is disposed on a substrate. The epitaxial spacer is disposed on the substrate besides the gate structure, wherein the epitaxial spacer includes silicon and nitrogen, and the ratio of nitrogen to silicon is larger than 1.3. The epitaxial structure is disposed in the substrate besides the epitaxial spacer. A semiconductor process includes the following steps for forming an epitaxial structure. A gate structure is formed on a substrate. An epitaxial spacer is formed on the substrate besides the gate structure for defining the position of an epitaxial structure, wherein the epitaxial spacer includes silicon and nitrogen, and the ratio of nitrogen to silicon is larger than 1.3. The epitaxial structure is formed in the substrate besides the epitaxial spacer.Type: ApplicationFiled: September 25, 2014Publication date: February 18, 2016Inventors: Man-Ling Lu, Yu-Hsiang Hung, Chung-Fu Chang, Yen-Liang Wu, Wen-Jiun Shen, Chia-Jong Liu, Ssu-I Fu, Yi-Wei Chen
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Publication number: 20160049467Abstract: A field effect transistor (FinFET) device includes a substrate, a fin structure, a shallow trench isolation and a gate structure. The fin structure is formed on a surface of the substrate and includes a base fin structure and an epitaxial fin structure formed on the base fin structure. The shallow trench isolation structure is formed on the surface of the substrate and includes a peripheral zone and a concave zone. The peripheral zone physically contacts with the fin structure. The gate structure is disposed on the epitaxial fin structure perpendicularly. A method of fabricating the aforementioned field effect transistor is also provided.Type: ApplicationFiled: September 18, 2014Publication date: February 18, 2016Applicant: UNITED MICROELECTRONICS CORPORATIONInventors: YEN-LIANG WU, CHUNG-FU CHANG, YU-HSIANG HUNG, SSU-I FU, WEN-JIUN SHEN, MAN-LING LU, CHIA-JONG LIU, YI-WEI CHEN
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Publication number: 20160020323Abstract: A semiconductor device includes a fin structure, an insulating structure, a protruding structure, an epitaxial structure, and a gate structure. The fin structure and the insulating structure are disposed on the substrate. The protruding structure is in direct contact with the substrate and partially protrudes from the insulating structure, and the protruding structure is the fin structure. The epitaxial structure is disposed on a top surface of the fin structure and completely covers the top surface of the fin structure. In addition, the epitaxial structure has a curved top surface. The gate structure covers the fin structure and the epitaxial structure.Type: ApplicationFiled: August 20, 2014Publication date: January 21, 2016Inventors: Yen-Liang Wu, Chung-Fu Chang, Yu-Hsiang Hung, Wen-Jiun Shen, Ssu-I Fu, Man-Ling Lu, Chia-Jong Liu, Yi-Wei Chen
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Publication number: 20160020110Abstract: A method of forming a semiconductor device is provided. At least one stacked structure is provided on a substrate. A first spacer material layer, a second spacer material layer, and a third spacer material layer are sequentially formed on the substrate and cover the stacked structure. The first, second, and third spacer material layers are etched to form a tri-layer spacer structure on the sidewall of the stacked structure. The tri-layer spacer structure includes, from one side of the stacked structure, a first spacer, a second spacer, and a third spacer, and a dielectric constant of the second spacer is less than each of a dielectric constant of the first spacer and a dielectric constant of the third spacer.Type: ApplicationFiled: August 18, 2014Publication date: January 21, 2016Inventors: Man-Ling Lu, Yu-Hsiang Hung, Chung-Fu Chang, Yen-Liang Wu, Wen-Jiun Shen, Chia-Jong Liu, Ssu-I Fu, Yi-Wei Chen
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Patent number: 9224864Abstract: A semiconductor device includes a fin structure, an insulating structure, a protruding structure, an epitaxial structure, and a gate structure. The fin structure and the insulating structure are disposed on the substrate. The protruding structure is in direct contact with the substrate and partially protrudes from the insulating structure, and the protruding structure is the fin structure. The epitaxial structure is disposed on a top surface of the fin structure and completely covers the top surface of the fin structure. In addition, the epitaxial structure has a curved top surface. The gate structure covers the fin structure and the epitaxial structure.Type: GrantFiled: August 20, 2014Date of Patent: December 29, 2015Assignee: UNITED MICROELECTRONICS CORP.Inventors: Yen-Liang Wu, Chung-Fu Chang, Yu-Hsiang Hung, Wen-Jiun Shen, Ssu-I Fu, Man-Ling Lu, Chia-Jong Liu, Yi-Wei Chen
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Publication number: 20150364568Abstract: A fabrication method of a semiconductor structure includes the following steps. First of all, a gate structure is provided on a substrate, and a first material layer is formed on the substrate and the gate structure. Next, boron dopant is implanted to the substrate, at two sides of the gate structure, to form a first doped region, and P type conductive dopant is implanted to the substrate, at the two sides of the gate structure, to form a second doped region. As following, a second material layer is formed on the first material layer. Finally, the second material layer, the first material layer and the substrate at the two sides of the gate structure are etched sequentially, and a recess is formed in the substrate, at the two sides of the gate structure, wherein the recess is positioned within the first doped region.Type: ApplicationFiled: July 27, 2014Publication date: December 17, 2015Inventors: Yen-Liang Wu, Chung-Fu Chang, Yu-Hsiang Hung, Ssu-I Fu, Man-Ling Lu, Chia-Jong Liu, Wen-Jiun Shen, Yi-Wei Chen
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Patent number: 9214395Abstract: A method of manufacturing a semiconductor device including the steps of providing a substrate having first type semiconductor regions and second type semiconductor regions, forming a conformal first epitaxy mask layer on the substrate, forming first type epitaxial layer in the substrate of the first type semiconductor regions, forming a conformal second epitaxy mask layer on the substrate, forming second type epitaxial layer in the substrate of the second type semiconductor regions, and removing the second epitaxy mask layer.Type: GrantFiled: March 13, 2013Date of Patent: December 15, 2015Assignee: UNITED MICROELECTRONICS CORP.Inventors: Yu-Hsiang Hung, Chung-Fu Chang, Chia-Jong Liu, Yen-Liang Wu, Pei-Yu Chou, Home-Been Cheng
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Publication number: 20150357436Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a gate structure on the substrate; performing a first dry etching process to form a recess in the substrate adjacent to the gate structure; and performing a second dry etching process to expand the recess.Type: ApplicationFiled: July 7, 2014Publication date: December 10, 2015Inventors: Wen-Jiun Shen, Chia-Jong Liu, Yi-Wei Chen, Ssu-I Fu, Chung-Fu Chang, Yu-Hsiang Hung, Yen-Liang Wu, Man-Ling Lu
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Patent number: 9093477Abstract: An implantation processing step includes the following steps for a recess in a FinFET. At least a fin structure is formed on a substrate. A gate is formed across the fin structure. A recess is formed in the fin structure beside the gate. An angle anti-punch through implant is performed to form an embedded layer in the fin structure right below the gate. An angle barrier implant is performed to form a barrier liner in the fin structure surrounding the recess. A junction implant is performed to form a junction doped region in the fin structure below the recess.Type: GrantFiled: November 9, 2014Date of Patent: July 28, 2015Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chien-Ting Lin, Chia-Jong Liu
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Patent number: 9006058Abstract: A method for fabricating a semiconductor device is described. A semiconductor substrate is provided, wherein the substrate has a first area and a second area. A first gate structure and a second gate structure are formed over the substrate in the first area and the substrate in the second area, respectively. A first spacer is framed on the sidewall of each gate structure. At least one etching process including at least one wet etching process is performed. The first spacer is removed. A second spacer is formed on the sidewall of each gate structure. A mask layer is formed in the second area. Ion implantation is formed using the mask layer, the first gate structure and the second spacer as a mask to form S/D extensions in the substrate beside the first gate structure in the first area. The mask layer is then removed.Type: GrantFiled: January 8, 2014Date of Patent: April 14, 2015Assignee: United Microelectronics Corp.Inventors: Tung-Ming Chen, Yu-Chun Huang, Shin-Chuan Huang, Chia-Jong Liu, I-Fang Huang
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Publication number: 20140273368Abstract: A method of manufacturing a semiconductor device including the steps of providing a substrate having first type semiconductor regions and second type semiconductor regions, forming a conformal first epitaxy mask layer on the substrate, forming first type epitaxial layer in the substrate of the first type semiconductor regions, forming a conformal second epitaxy mask layer on the substrate, forming second type epitaxial layer in the substrate of the second type semiconductor regions, and removing the second epitaxy mask layer.Type: ApplicationFiled: March 13, 2013Publication date: September 18, 2014Applicant: UNITED MICROELECTRONICS CORP.Inventors: Yu-Hsiang Hung, Chung-Fu Chang, Chia-Jong Liu, Yen-Liang Wu, Pei-Yu Chou, Home-Been Cheng
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Patent number: 8829575Abstract: A semiconductor structure includes a gate, a dual spacer and two recesses. The gate is located on a substrate. The dual spacer is located on the substrate beside the gate. The recesses are located in the substrate and the dual spacers, wherein the sidewall of each of the recesses next to the gate has a lower tip and an upper tip, and the lower tip is located in the substrate while the upper tip is an acute angle located in the dual spacer and close to the substrate. The present invention also provides a semiconductor process formed said semiconductor structure.Type: GrantFiled: December 26, 2012Date of Patent: September 9, 2014Assignee: United Microelectronics Corp.Inventors: Chung-Fu Chang, Yu-Hsiang Hung, Chia-Jong Liu, Yen-Liang Wu, Pei-Yu Chou, Home-Been Cheng
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Patent number: 8772120Abstract: A semiconductor process includes the following steps. A gate structure is formed on a substrate. A main spacer is formed on the substrate beside the gate structure. A source/drain is formed in the substrate beside the main spacer. After the source/drain is formed, an epitaxial structure is formed in the substrate beside the main spacer. A gate structure may be respectively formed in a first area and a second area of a substrate. A main spacer is formed on the substrate respectively beside the two gate structures. A source/drain is formed in the substrate respectively beside the two spacers. After the two source/drains are formed, an epitaxial structure is formed in the substrate respectively beside the main spacers.Type: GrantFiled: May 24, 2012Date of Patent: July 8, 2014Assignee: United Microelectronics Corp.Inventors: Chung-Fu Chang, Yu-Hsiang Hung, Shin-Chuan Huang, Chia-Jong Liu, Yen-Liang Wu, Pei-Yu Chou
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Publication number: 20140175527Abstract: A semiconductor structure includes a gate, a dual spacer and two recesses. The gate is located on a substrate. The dual spacer is located on the substrate beside the gate. The recesses are located in the substrate and the dual spacers, wherein the sidewall of each of the recesses next to the gate has a lower tip and an upper tip, and the lower tip is located in the substrate while the upper tip is an acute angle located in the dual spacer and close to the substrate. The present invention also provides a semiconductor process formed said semiconductor structure.Type: ApplicationFiled: December 26, 2012Publication date: June 26, 2014Applicant: UNITED MICROELECTRONICS CORP.Inventors: Chung-Fu Chang, Yu-Hsiang Hung, Chia-Jong Liu, Yen-Liang Wu, Pei-Yu Chou, Home-Been Cheng
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Patent number: 8753902Abstract: A method of controlling an etching process for forming an epitaxial structure includes the following steps. A substrate having a gate thereon is provided. A spacer is formed on the substrate beside the gate to define the position of the epitaxial structure. A thickness of the spacer is measured. The etching time of a first etching process is set according to the thickness. The first etching process is performed to form a recess in the substrate beside the spacer. The epitaxial structure is formed in the recess.Type: GrantFiled: March 13, 2013Date of Patent: June 17, 2014Assignee: United Microelectronics Corp.Inventors: Chia-Jong Liu, Yen-Liang Wu, Chung-Fu Chang, Yu-Hsiang Hung, Pei-Yu Chou, Home-Been Cheng