Patents by Inventor Chia-Lin Yang

Chia-Lin Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20100295852
    Abstract: The invention relates to a power-gating control method for a graphics processing unit having a unified shader unit, which includes a plurality of shaders. The method includes the steps of: rendering a plurality of previous frames; calculating a first number of active shaders for rendering each previous frame, and a corresponding frame rate of each previous frame; determining a second number of active shaders for rendering a next frame immediately following the previous frame according to the first number of active shaders and the corresponding frame rate of each previous frame; and activating corresponding shaders through one or more power-gating control elements according to the second number of active shaders.
    Type: Application
    Filed: September 29, 2009
    Publication date: November 25, 2010
    Inventors: Chia-Lin YANG, Po-Han Wang, Yu-Jung Cheng
  • Patent number: 7345909
    Abstract: An SRAM memory cell that has a relatively small power consumption when writing a write value of ‘0’ to the memory cell includes cross-coupled first and second inverters, at least one read access transistor for selectively coupling a respective read bit line to a common connection node of a respective one of the first and second inverters, a switching transistor for selectively coupling the second inverter to a ground terminal, and a write access transistor for selectively coupling the common connection node of the second inverter to a write bit line.
    Type: Grant
    Filed: September 23, 2004
    Date of Patent: March 18, 2008
    Inventors: Yen-Jen Chang, Feipei Lai, Chia-Lin Yang
  • Publication number: 20070297249
    Abstract: An SRAM memory cell that has a relatively small power consumption when writing a write value of ‘0’ to the memory cell includes cross-coupled first and second inverters, at least one read access transistor for selectively coupling a respective read bit line to a common connection node of a respective one of the first and second inverters, a switching transistor for selectively coupling the second inverter to a ground terminal, and a write access transistor for selectively coupling the common connection node of the second inverter to a write bit line.
    Type: Application
    Filed: September 23, 2004
    Publication date: December 27, 2007
    Inventors: Yen-Jen Chang, Feipei Lai, Chia-Lin Yang