Abstract: A semiconductor device comprises: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region, wherein the active region comprises multiple alternating well layers and barrier layers, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; an electron blocking region between the second semiconductor structure and the active region; a first aluminum-containing layer between the electron blocking region and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the first electron blocking layer; and a p-type dopant above the bottom surface of the active region and comprising a concentration profile comprising a peak shape having a peak concentration value, wherein the peak concentration value lies at a distance of between 15 nm and 60 nm from the upper surface of the active region.

Abstract: A semiconductor device, includes: a first conductive type semiconductor region including a first semiconductor structure, wherein the first semiconductor structure includes one or more pairs of stack, the one or more pairs of stack respectively includes a first layer and a second layer, the first layer includes AlxGa1-xN, the second layer includes AlyGa1-yN, wherein 0?x<1, 0<y<1, x<y, wherein one of the one or more pairs of stack includes an interface region located between the first layer and the second layer adjacent to the first layer; a second conductive type semiconductor region located on the first conductive type semiconductor region; and an active region located between the first conductive type semiconductor region and the second conductive type semiconductor region; wherein the first semiconductor structure includes a first dopant having a first doping concentration with a peak value at the interface region.

Abstract: A common mode choke is provided, including a hollow ferrite core, a plurality of coils wound around the ferrite core, and a substrate. Each of the coils has a first end and a second end. The substrate is disposed on the side of the ferrite core and has a plurality of through holes. The first and second ends of the coils are engaged in the through holes. When viewed along the central axis of the ferrite core, the first and second ends of the coils are located on the outer side the ferrite core.

Abstract: A portable stove with stabilized gas pressure has a valve assembly, a gas pressure stabilizer, and a burner. The valve assembly has a body and a valve core. The body has an inlet, an outlet, and a cavity. The valve core is received in the cavity and blocks the inlet and the outlet. The gas pressure stabilizer has a flexible membrane, a pushing assembly, a spindle, and a compression spring. The membrane is configured to isolate the cavity from the outlet. The pushing assembly is mounted on a center of the membrane and abuts the valve core. The spindle has is screwed on the body, and is movable along an axial direction. The compression spring is located in the body, abuts against the spindle and the pushing assembly, and is compressible along the axial direction. The burner is connected with the body.

Abstract: A barbecue grill has a body, a barbecue grid, a heating device, a heating adjustment unit, a thermal sensor, and a control device. The heating adjustment unit is connected with the heating device. The thermal sensor is mounted in the body and detects an actual temperature. The control device has a constant temperature control module electrically connected to the heating adjustment unit and the thermal sensor. The constant temperature control module controls the heating adjustment unit to adjust heat output of the heating device according to a difference value between a target temperature and the actual temperature. The heat output of the heating device is increased or decreased according to the difference value to keep the temperature constant at the position of the thermal sensor.

Abstract: A semiconductor device includes: a first semiconductor region; and a first electrode on the first semiconductor region; wherein first semiconductor region includes a first layer and a second layer, the second layer includes a first portion and a second portion adjacent to the first portion, the first portion has a first thickness, the second portion has a second thickness less than the first thickness, the first layer includes a first material and a first dopant, the first material includes multiple elements, the first dopant has a first concentration, the second layer includes a second material and a second dopant, the second material includes multiple elements, the second dopant has a second concentration, one of the elements of the first material of the first layer is different from the elements of the second material of the second layer.

Abstract: A lifting device includes a guide unit, a support unit and a lifting unit. The guide unit is extendable and retractable along a direction. The support unit is disposed in the guide unit and includes a securing connector fixed to a seat body and made of elastic material, a support tube connected to the securing connector, and a support member disposed on the support tube. The lifting unit includes a first rod-actuating screw member disposed on the support member and having a first threaded hole, and a threaded rod unit including a first threaded rod extending into the support tube and being threadedly engaged with the first threaded hole, such that the first threaded rod is rotatable by an external force and movable in the direction.

Abstract: A door-lifting type barbecue stove for grilling and smoking includes a furnace, a mounting rack, a door assembly, and a linkage mechanism. The mounting rack is fixed on the furnace and is disposed above the furnace. The door assembly is disposed above the furnace, is adjacent to the mounting rack, and swings relative to the mounting rack and the furnace. The linkage mechanism connects the mounting rack and the door assembly, lifts the door assembly up, and makes the door assembly swing relative to the mounting rack.

Abstract: A heater includes short and tall cabinet units that are connected together, and an ignition unit. The short cabinet unit has a recess facing upwardly, and a first receiving space spatially communicated with the recess. The tall cabinet unit has a second receiving space spatially communicated with the first receiving space. The ignition unit includes an ignition seat disposed in the recess, an igniter mounted to the ignition seat, and a gas pipe group connected to the igniter and extending from the first receiving space into the second receiving space. A height of the short cabinet unit ranges from 45 centimeters to 60 centimeters; a height of the tall cabinet unit ranges from 65 centimeters to 70 centimeters.

Abstract: A heater includes short and tall cabinet units that are connected together, and an ignition unit. The short cabinet unit has a recess facing upwardly, and a first receiving space spatially communicated with the recess. The tall cabinet unit has a second receiving space spatially communicated with the first receiving space. The ignition unit includes an ignition seat disposed in the recess, an igniter mounted to the ignition seat, and a gas pipe group connected to the igniter and extending from the first receiving space into the second receiving space. A height of the short cabinet unit ranges from 45 centimeters to 60 centimeters; a height of the tall cabinet unit ranges from 65 centimeters to 70 centimeters.

Abstract: A semiconductor device comprises: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region, wherein the active region comprises multiple alternating well layers and barrier layers, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; an electron blocking region between the second semiconductor structure and the active region; a first aluminum-containing layer between the electron blocking region and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the first electron blocking layer; and a p-type dopant above the bottom surface of the active region and comprising a concentration profile comprising a peak shape having a peak concentration value, wherein the peak concentration value lies at a distance of between 15 nm and 60 nm from the upper surface of the active region.

Abstract: A memory device includes a memory array, a first reference unit, a second reference unit, and a control unit. The memory array includes a plurality of memory cells. The first reference unit provides a first reference current. The second reference unit provides a second reference current, wherein a current value of the first reference current is less than a current value of the second reference current. In a data-writing operation, the control unit provides a first current to a memory cell, reads a second current generated by the memory cell in response to the first current, and selects to compare the second current with the first reference current or to compare the second current with the second reference current according to a data-writing state of the memory cell, so as to determine whether a data writing of the data writing state is successful.

Abstract: A semiconductor device comprises: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region, wherein the active region comprises multiple alternating well layers and barrier layers, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; an electron blocking region between the second semiconductor structure and the active region; a first aluminum-containing layer between the electron blocking region and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the first electron blocking layer; and a p-type dopant above the bottom surface of the active region and comprising a concentration profile comprising a peak shape having a peak concentration value, wherein the peak concentration value lies at a distance of between 15 nm and 60 nm from the upper surface of the active region.

Abstract: A power supplying method for a computer system is proposed. The computer system includes a first computer node, a first power supply unit corresponding to the first computer node, a second computer node, a second power supply unit corresponding to the second computer node, and a connection module electrically connected to the computer nodes and the power supply units. The power supplying method includes: detecting, by the first computer node, whether the second power supply unit operates abnormally; and upon detecting at least that the second power supply unit operates abnormally, controlling, by the first computer node, the first power supply unit to provide electric power to the second computer node through the connection module.

Abstract: A semiconductor device includes: a first semiconductor region; and a first electrode on the first semiconductor region; wherein first semiconductor region includes a first layer and a second layer, the second layer includes a first portion and a second portion adjacent to the first portion, the first portion has a first thickness, the second portion has a second thickness less than the first thickness, the first layer includes a first material and a first dopant, the first material includes multiple elements, the first dopant has a first concentration, the second layer includes a second material and a second dopant, the second material includes multiple elements, the second dopant has a second concentration, one of the elements of the first material of the first layer is different from the elements of the second material of the second layer.

Abstract: A tool cabinet includes a main body, a shielding unit, and first and second fire resistance subunits. The main body defines a first receiving space and at least one second receiving space. The first fire resistance subunit is made of a fire-resistant material, and is disposed in the first receiving space. The second fire resistance subunit is mounted co-movably to a front door of the shielding unit, and has a front fire resistance layer made of a fire-resistant material. The front fire resistance layer and the first fire resistance subunit form a hollow shell structure when the front door is at a close position. An internal space of the hollow shell structure is isolated from the second receiving space.

Abstract: A lifting device includes a guide unit, a support unit and a lifting unit. The guide unit is extendable and retractable along a direction. The support unit is disposed in the guide unit and includes a securing connector fixed to a seat body and made of elastic material, a support tube connected to the securing connector, and a support member disposed on the support tube. The lifting unit includes a first rod-actuating screw member disposed on the support member and having a first threaded hole, and a threaded rod unit including a first threaded rod extending into the support tube and being threadedly engaged with the first threaded hole, such that the first threaded rod is rotatable by an external force and movable in the direction.

Abstract: A shelf and ladder combination includes two support rod units, partition plates connected between the support rod units, a cross bar, two main connecting brackets connecting the cross bar to the support rod units, and a ladder unit. The ladder unit includes two ladder legs, at least one fixing unit, and a plurality of rungs connected between the ladder legs. Each ladder leg has a first end portion adjacent to the crossbar, and a second end portion opposite to the first end portion. The at least one fixing unit is sleeved on the crossbar, is slidable along the crossbar, and is connected to the first end portion of one of the ladder legs.

Abstract: A slidable ladder device is configured to be sleeved on and slidable along a crossbar, and includes two support rods and a plurality of steps connected between the support rods. At least one fixing unit is connected to an end portion of one of the support rods, and includes a base member having a main portion, a connecting portion and an extension portion cooperatively defining an insertion space for insertion of the crossbar therethrough. A switchable member is pivotally connected to the connecting portion, and is rotatable relative to the connecting portion between closed and open positions, in which the switchable member closes and opens an opening of the insertion space, respectively.